ROHM R5016ANJ Manual
Contents
1. _ 100 10000 E E Ce E 8 m P gt z 10 1000 i ket o c o 3 m M d 9 1 Q 100 S Z lt UU 3 Ta 125 C E 9 Oo c a Ta 75 C lt T Cs 2 Ww 0 1 Ta 25 C E 10 Ta 25 C o lm Ta 25 C g SIME ui gt o OV lt u o Qo 1 0 0 5 1 1 5 0 1 1 10 100 1000 SOURCE DRAIN VOLTAGE Vgp V DRAIN SOURCE VOLTAGE Vps V Fig 10 Reverse Drain Current vs Fig 11 Typical Capacitance vs Sourse Drain Voltage Drain Source Voltage 1000 10000 o E m g g 1000 E on E E ul gt 100 100 9 o 9 Z a Ta 25 C 5 i di dt 100A us E 10 E Vos OV A Pulsed ina 10 1 0 1 4 10 100 0 01 0 1 1 10 100 REVERSE DRAIN CURRENT lpr A DRAIN CURRENT Ip A Fig 13 Reverse Recovery Time Fig 14 Switching Characteristics vs Reverse Drain Current a 1 gt Ta 25 C wu Single Pulse 1Unit E 2 0 1 Rth ch a t r t xRth ch a z Rth ch a 48 9 C W Ba 20 lt Z 0 01 ngo 0 001 Ed z ra o 0 0001 0 0001 0 001 0 01 0 1 1 10 100 1000 PULSE WIDTH Pw s Fig 15 Normalized Transient Thermal Resistance vs Pulse Width2. Data Sheet 100 30 20 Operation in this Lame 10v 7 0V Ta 25 C area is limited N 25 F amp 0v 6 5V Pulsed amp 10 HPY Roson Pw 1ms T z 15 a v 3 6 0V 0 a 20 aa nS N X E 6 0V E Pw 10ms E 5 8 0V u 1 NUI E 15 5 5V d 10 T C c 7 0V x DC operation 5 5 55V 5 B Ta 25 C o 9 10 6 5V z z Pulsed z 2 e E 5 0V S 5 wm E c 5 0V a anae Vas 4 5V Single Pulse Ves 4 5V 0 01 0 0 0 1 1 10 100 1000 0 10 20 30 40 50 0 1 2 3 4 5 DRAIN SOURCE VOLTAGE VDS V DRAIN SOURCE VOLTAGE VDS V DRAIN SOURCE VOLTAGE Vps V Fig 1 Maximum Safe Operating Area Fig 2 Typical Output Characteristics I Fig
3. 1 Body Diode www rohm com 2009 ROHM Co Ltd All rights reserved 1 5 2009 02 Rev A R5016ANJ Electrical characteristics Ta 25 C Data Sheet Parameter Symbol Min Typ Max Unit Conditions Gate source leakage lass 100 nA Vas 30V Vos 0V Drain source breakdown voltage Vierypss 500 V Ip 1mA Vas 0V Zero gate voltage drain current Ipss 100 uA Vos 500V Vas 0V Gate threshold voltage Vasith 2 5 4 5 V Vos 10V Ip 1mA Static drain source on state resistance Roso 0 21 0 27 Ip 8A Vas 10V Forward transfer admittance Yis 6 0 S Ip 8A Vos 10V Input capacitance Ciss 1800 x pF Vps 25V Output capacitance Coss 750 pF Vas 0V Reverse transfer capacitance Crss 55 pF f 1MHz Turn on delay time taon 40 ns Ip 8A Voo 250V Rise time tr 50 ns Vas 10V Turn off delay time ta ott 150 ns RL 31 30 Fall time tr 55 ns Re 10Q Total gate charge Qg 50 nC Vop 250V Gate source charge Qos 9 5 nC a C Gate drain charge Qoa 21 nC Re 15 6Q Re 100 Pulsed eBody diode characteristics Source drain Ta 25 C Conditions 15 V ls 16A Vas 0V Parameter Forward voltage Vet Pulsed www rohm com 2009 ROHM Co Ltd All rights reserved 2 5 2009 02 Rev A R5016ANJ eElectrical characteristics curves
4. www rohm com 2009 ROHM Co Ltd All rights reserved 4 5 Data Sheet 40 50 60 70 TOTAL GATE CHARGE Q nC Fig 12 Dynamic Input Characteristics 2009 02 Rev A R5016ANJ eSwitching characteristics measurement circuit Vas lp Vps RL D U T Rg VDD Fig 1 Switching time measurement circuit Vas Vps le Const RL D U T RG VDD Fig 3 Gate charge measurement circuit Fig 5 Avalanche measurement circuit www rohm com 2009 ROHM Co Ltd All rights reserved Data Sheet Pulse Width ton toff Fig 2 Switching waveforms Charge Fig 4 Gate charge waveform V Bross B 1 LI 2 V Bross As es L sL _ 2 ba V Bross Vop Fig 6 Avalanche waveform 5 5 2009 02 Rev A Appendix Notes No copying or reproduction of this document in part or in whole is permitted without the consent of ROHM Co LTD The content specified herein is subject to change for improvement without notice The content specified herein is for the purpose of introducing ROHM s products hereinafter Products If you wish to use any such Product please be sure to refer to the specifications which can be obtained from ROHM upon request Examples of application circuits circuit constants and any other information contained herein illustrate the standard
5. 3 Typical Output Characteristics I 100 o 6 10 az S w Vps 10V Z S Ta 125 C zx Pulsed 8 5 G Ta 75 C x 10 gt zg o 3 7 S Ta 25 C E Ta 125 C o 4 ux 1 Ta 25 C zZ 1 Ta 75 C lt 9 ee hd Ta 25 C 3 Bw t Ta 25 C 2 99 o 0 1 9 zZ lt z Q 22 fo 04 3 Rd aD E ul o uU 0 01 c 1 T E E lt i C 7 0 001 3 0 0 01 0 0 1 5 3 0 45 6 0 50 0 50 100 150 0 1 1 10 100 GATE SOURCE VOLTAGE Ves V CHANNEL TEMPERATURE T C DRAIN CURRENT Ip A Fig 4 Typical Transfer Characteristics Fig 5 Gate Threshold Voltage Fig 6 Static Drain Source On State vs Channel Temperature Resistance vs Drain Current i 2 ug 100 Lr m 9 amp Ta 25 C S A Vps 10V QE Pulsed 5 Pulsed z 22 E o s aa Z 10 Wg W Z Q go 9 gt Bee uj oM ou LD 1 92 ag 25 ES Z 2 lt Ta 25 C x 2 22 c Ta 25 C og DE Q o1 Ta 75 C EC gu E Ta 125 C lt S ott C fa x Z 5 9 0 01 0 5 10 15 50 0 50 100 150 0 01 0 1 1 10 100 GATE SOURCE VOLTAGE Ves V CHANNEL TEMPERATURE T C DRAIN CURRENT Ip A Fig 7 Static Drain Source On State Fig 8 Static Drain Source On State Fig 9 Forward Transfer Admittance www rohm com 2009 ROHM Co Resistance vs Gate Source Voltage Ltd All rights reserved Resistance vs Channel Temperature 3 5 vs Drain Current 2009 02 Rev A
6. 615 8585 Japan FAX 48120 345 0475 Appendix Rev4 0 ROHM SEMICONDUCTOR
7. redundancy fire control and fail safe designs ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual The Products are not designed or manufactured to be used with any equipment device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury such as a medical instrument transportation equipment aerospace machinery nuclear reactor controller fuel controller or other safety device ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes If a Product is intend ed to be used for any such special purpose please contact a ROHM sales representative before purchasing If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law you will be required to obtain a license or permit under the Law Thank you for your accessing to ROHM product informations More detail product informations and catalogs are available please contact your nearest sales office ROHM Customer Support System THE AMERICAS EUROPE ASIA JAPAN www rohm com Contact us webmaster rohm co jp g y TEL 81 75 311 2121 Copyright 2009 ROHM Co Ltd ROHM Co Ltd 21 sain Mizosaki cho Ukyo ku Kyoto
8. ROHM SEMICONDUCTOR 10V Drive Nch MOSFET R5016ANJ Data Sheet eStructure Silicon N channel MOSFET eFeatures 1 Low on resistance 2 Fast switching speed 3 Wide SOA safe operating area 4 Gate source voltage Vess guaranteed to be 30V 5 Drive circuits can be simple 6 Parallel use is easy eApplications Switching ePackaging specifications Package Taping Code TL Type Basic ordering unit pieces 1000 R5016ANJ O eAbsolute maximum ratings Ta 25 C Dimensions Unit mm 1 24 1 Base Gate 2 Collector Drain 3 Emitter Source Inner circuit 1 Gate 2 Drain 3 Source Parameter Symbol Limits Unit Drain source voltage Voss 500 V Gate source voltage Vass 30 V M Continuous Ip S 16 A Pulsed IDP 64 A Gait anen Continuous ls 16 A Body Diode Pulsed Isp 64 A Avalanche Current ls 2 8 A Avalanche Energy Eas 2 18 mJ Total power dissipation Tc 25 C Pp 100 W Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C 1 Pws10us Duty cycles1 2 L 500uH Voo 50V Re 25Q Starting Tch 25 C 3 Limited only by maximum tempterature allowed Thermal resistance Parameter Channel to case Symbol Rth ch c Unit C W TT LC d n 254 0 78 94 E 5 08 27 m e 3 Each lead has same dimensions O 3
9. usage and operations of the Products The peripheral conditions must be taken into account when designing circuits for mass production Great care was taken in ensuring the accuracy of the information specified in this document However should you incur any damage arising from any inaccuracy or misprint of such information ROHM shall bear no re sponsibility for such damage The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products ROHM does not grant you explicitly or implicitly any license to use or exercise intellectual property or other rights held by ROHM and other parties ROHM shall bear no re sponsibility whatsoever for any dispute arising from the use of such technical information The Products specified in this document are intended to be used with general use electronic equipment or devices such as audio visual equipment office automation equipment communication devices elec tronic appliances and amusement devices The Products are not designed to be radiation tolerant While ROHM always makes efforts to enhance the quality and reliability of its Products a Product may fail or malfunction for a variety of reasons Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury fire or any other damage caused in the event of the failure of any Product such as derating
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ROHM R5016ANJ Manual