ROHM R6015ANJ Manual
Contents
1. 100 10000 Ves OV T Pulsed 10 Ta 125 C 1000 c TM Ta 75 C 2 oe e Ta 25 C 4 Ta 25 C 100 is Z z X F D 04 lt 10 w Ta 25 C rf f 1MHz na Ves OV 0 01 1 0 05 1 15 0 01 0 1 1 10 100 1000 SOURCE DRAIN VOLTAGE Vs V DRAIN SOURCE VOLTAGE Vos V Fig 10 Reverse Drain Current vs Fig 11 Typical Capacitance vs Sourse Drain Voltage Drain Source Voltage 1 10000 E Ta 25 C T t Vpp 300V E Ves 10V i 1000 RG 100 Pulsed gt di lator i 100 5 100 o 2 I LI O e Ta 25 C 10 S di dt 100A us a bos Y Vos OV T Pulsed 10 1 0 1 1 10 100 0 01 0 1 1 10 100 REVERSE DRAIN CURRENT lp A DR2. Pw 100us Operation in this area is limited Py 1ms byRps on Pw 10ms Tc 25 C Single Pulse DC operation 0 1 1 100 1000 DRAIN SOURCE VOLTAGE Vos V Fig 1 Maximum Safe Operating Aera Vos 10V Pulsed Ta 125 C Ta 75 C So Ta 25 C Ta 25 C 0 1 2 3 4 5 6 7 GATE SOURCE VOLTAGE Ves V Fig 4 Typical Transfer Characteristics GATE SOURCE VOLTAGE Ves V 5 10 Fig 7 Static Drain Source On State Resistance vs Gate Source Voltage www rohm com Q 2009 ROHM Co Ltd All rights reserved 15 STATIC DRAIN SOURCE ON STATE GATE THRESHOLD VOLTAGE Vesin V DRAIN CURRENT b A RESISTANCE Roson Q 40 30 20 Ta 25 C ind Pulsed 8 0V 7 0V 6 5V 6 0V 5 OV Ves 4 5V 10 20 30 40 50 DRAIN SOURCE VOLTAGE Vps V Fig 2 Typical output characteristics I 50 100 150 CHANNEL TEMPERATURE Ten C Fig 5 Gate Threshold Voltage vs Channel Temperature
3. 0 50 100 CHANNEL TEMPERATURE Ten C Fig 8 Static Drain Source On State Resistance vs Channel Temperature 3 5 150 STATIC DRAIN SOURCE ON STATE FORWARD TRANSFER ADMITTANCE DRAIN CURRENT b A IYfs S RESISTANCE Roson Q 20 Ta 25 C Pulsed Data Sheet 10V 15 8 0V 10 6 0V Vas 4 5V 1 2 3 4 5 DRAIN SOURCE VOLTAGE Vos V Fig 3 Typical output characteristics II e Ta 125 C Ta 75 C Ta 25 C 0 01 0 001 100 Vos 10V Pulsed 10 0 01 0 1 Ta 25 C 1 10 100 DRAIN CURRENT b A Fig 6 Static Drain Source On State Resistance vs Drain Current 0 1 Ta 25 C Ta 25 C 0 01 Ta 75 C Ta 125 C 0 001 0 001 0 01 0 1 1 10 100 DRAIN CURRENT b A Fig 9 Forward Transfer Admittance vs Drain Current 2009 04 Rev A R6015ANJ
4. Data Sheet Conditions Vas t30V Vps 0V Ip 1mA Vas 0V Zero gate voltage drain current Vos 600V Vas 0V Gate threshold voltage Static drain source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance sk n sk sk sk sk f e r f 9 am h S fal C c Co 4 5 V 100 uA 0 3 2 2 O o o Turn on delay time Turn off delay time n Fall time ot 6 n Total gate charge Qs nC Gate source charge Qos nC Gate drain charge Qoa nC Pulsed Vos 10V Ib 1mA Ip27 5A Vas 10V Ip27 5A Vos 10V Vos 25V Vas 0V f 1MHz Ip 7 5A Voo 300V Vas 10V Ri 40Q Re 10Q Vpp 300V Ip 15A Vas 10V Rir 20Q Ra 10Q eBody diode characteristics Source drain Ta 25 C Parameter Forward voltage Conditions _Vso j 15 V ls 15A Ves 0V Pulsed www rohm com 2009 ROHM Co Ltd All rights reserved 2 5 2009 04 Rev A R6015ANJ eElectrical characteristics curves STATIC DRAIN SOURCE ON STATE DRAIN CURRENT lp A DRAIN CURRENT lp A RESISTANCE Ros on Q 100 p eo e 0 01 100 10 0 1
5. AIN CURRENT Ip A Fig 13 Reverse Recovery Time Fig 14 Switching Characteristics vs Reverse Drain Current 10 Ta 25 C x Single Pulse 1Unit T 4 Rth ch a t r t Rth ch a m Rth ch a 49 7 C W E 0 1 DO zz nd E to 0 01 nl N x nad lt 0 001 nc O Z 0 0001 0 0001 0 001 0 01 0 1 1 10 100 1000 PULSE WIDTH Pw s Fig 15 Normalized Transient Thermal Resistance vs Pulse Width www rohm com 2009 ROHM Co Ltd All rights reserved 4 5 GATE SOURCE VOLTAGE Ves V Data Sheet Ta 25 C 0 10 20 30 40 50 60 70 TOTAL GATE CHARGE Q nC Fig 12 Dynamic Input Characteristics 2009 04 Rev A R6015ANJ Data Sheet eMeasurement circuits Pulse Width Vas D U T Var qne RG ves 10 90 90 td on i ton toff Fig 1 Switching time measurement circuit Fig 2 Switching waveforms Vas lp Vos Ic Const 3 RL D U T RG VDD i i Charge Fig 3 Gate charge measurement circuit Fig 4 Gate charge waveform VGs las VDS Fig 5 Avalanche measurement circuit Fig 6 Avalanche waveform www rohm com 9 2009 ROHM Co Ltd All rights reserved 5 5 2009 04 Rev A Notice Notes No copying or reproduction of this document in part or in whole is permitted without the consent of ROHM Co Ltd The content specified herein is subject to change for improvement without notice The content specified he
6. ROHM Data Sheet SEMICONDUCTOR 10V Drive Nch MOSFET R6015ANJ eStructure eDimensions Unit mm Silicon N channel MOSFET eFeatures 1 Low on resistance 2 Fast switching speed 3 Gate source voltage Vess guaranteed to be 30V 4 Drive circuits can be simple 5 Parallel use is easy rx 13 J TS 27 1 Gate 2 Drain 3 Source Each lead has same dimensions e Applications Switching ePackaging specifications Package Type Code 1 8 5 0 4 P 0 27 1 Gate 2 Drain 3 Source Each lead has same dimensions Basic ordering unit pieces eAbsolute maximum ratings Ta 25 C Parameter Symbol Drain source voltage Voss Gate source voltage Vass Continuous lb Drain current FE Pulsed IpP Source current Continuous ls Body Diode Pulsed Isp Avalanche Current las 1 Gate Avalanche Energy Eas 2 i oie 1 Body Diode Total power dissipation Tc 25 C Po Channel temperature Tch Range of storage temperature Tstg 1 Pw lt 10us Duty cycle lt 1 2 L 500uH Voo 5OV Re 25Q Starting Tch 25 C 3 Limited only by maximum temperature allowed eThermal resistance Parameter Symbol Unit Channel to case Rth ch c C W www rohm com 2009 ROHM Co Ltd All rights reserved 1 5 2009 04 Rev A R6015ANJ eElectrical characteristics Ta 25 C Parameter Gate source leakage Drain source breakdown voltage Min Typ
7. ct informations More detail product informations and catalogs are available please contact us ROHM ROHM Customer Support System SEMICONDUCTOR http www rohm com contact www rohm com 2009 ROHM Co Ltd All rights reserved R0039A
8. kes efforts to enhance the quality and reliability of its Products a Product may fail or malfunction for a variety of reasons Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury fire or any other damage caused in the event of the failure of any Product such as derating redundancy fire control and fail safe designs ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual The Products are not designed or manufactured to be used with any equipment device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury Such as a medical instrument transportation equipment aerospace machinery nuclear reactor controller fuel controller or other safety device ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes If a Product is intended to be used for any such special purpose please contact a ROHM sales representative before purchasing If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law you will be required to obtain a license or permit under the Law Thank you for your accessing to ROHM produ
9. rein is for the purpose of introducing ROHM s products hereinafter Products If you wish to use any such Product please be sure to refer to the specifications which can be obtained from ROHM upon request Examples of application circuits circuit constants and any other information contained herein illustrate the standard usage and operations of the Products The peripheral conditions must be taken into account when designing circuits for mass production Great care was taken in ensuring the accuracy of the information specified in this document However should you incur any damage arising from any inaccuracy or misprint of such information ROHM shall bear no responsibility for such damage The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products ROHM does not grant you explicitly or implicitly any license to use or exercise intellectual property or other rights held by ROHM and other parties ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information The Products specified in this document are intended to be used with general use electronic equipment or devices Such as audio visual equipment office automation equipment commu nication devices electronic appliances and amusement devices The Products specified in this document are not designed to be radiation tolerant While ROHM always ma
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ROHM R6015ANJ Manual