ROHM RCD060N25 Manual
Contents
1. 0 001 2 0 2 5 3 0 3 5 4 0 4 5 5 0 5 5 6 0 6 5 7 0 7 5 8 0 Gate Source Voltage Ves V Channel Temperature T C Fig 5 Static Drain Source On State Resistance vs Drain Current Fig 6 Static Drain Source On State Resistance vs Channel Temperature 10 pulsed T 125 C T 75 C T 25 C T 25 C Static Drain Source On State Resistance Ros on O Static Drain Source On State Resistance 0 1 0 01 0 1 1 10 50 25 0 25 50 75 100 125 150 Drain Current Ip A Channel Temperature T C www rohm com 2011 ROHM Co Ltd All rights reserved 3 6 2011 11 Rev A RCDO60N25 Fig 7 Forward Transfer Admittance vs Drain Current T 125 C T 75 C T 25 C T 25 C 10 pulsed o o S E TD lt CID D VS g gt 2 c 0 1 o LL 0 01 0 01 Fig 9 Static Drain Source On State Resistance vs Gate Source Voltage qe ELE EEE TT Cae eet 1500 1300 1100 900 Roston MQ 700 500 Static Drain Source On State Resistance 300 100 Gate Source Voltage Veg V www rohm com2. current bs 10 M Vps7250V Vos 0V Gate threshold voltage Vos th Mu ctas Vps710V lp21mA Forward transfer admittance Vps 10V Ip 3A Input capacitance EL PISA Vps 25V Output capacitance Cos 50 pF Ves 0V Reverse transfer capacitance Eel J ge hs pF f 1MHz Turn on delay time Etant 22 ns Vops 125V Ip 3A Turn off delay time F tan 30 ns R 41 670 Total gate charge Qy 15 mc V nns 125V Ip 6A Gate source charge Qa 6 nC Vos 10V Gate drain charge Pant 6 nc Pulsed eBody diode characteristics Source Drain Parameter Conditions Forward Voltage s R ven Pulsed www rohm com 2011 ROHM Co Ltd All rights reserved 2 6 2011 11 Rev A RCDO60N25 Data Sheet eElectrical characteristic curves Ta 25 C Fig 1 Typical Output Characteristics I Fig 2 Typical Output Characteristics II Drain Current Ip A Drain Current Ip A 0 0 2 0 4 0 6 0 8 1 Drain Source Voltage Vps V Drain Source Voltage Vps V Fig 3 Typical Transfer Characteristics Fig 4 Gate Threshold Voltage vs Channel Temperature 10 pulsed T 125 C T 75 C T 25 C T 25 C lp A Vesen V 0 1 Gate Threshold Voltage Drain Currnt 0 01
3. ROHN SEMICONDUCTOR 10V Drive Nch MOSFET RCD060N25 Data Sheet e Structure Silicon N channel MOSFET eFeatures 1 Low on resistance 2 High speed switching 3 Wide range of SOA 4 Drive circuits can be simple 5 Parallel use is easy e Application Switching e Packaging specifications Package Code Basic ordering unit pieces RCDO060N25 e Absolute maximum ratings Ta 25 C Unit V Gate source voltage Vess V A A Continuous s 6 A A A Parameter Drain source voltage Drain current Source current Body Diode Avalanche current Avalanche energy Power dissipation mJ w c C Channel temperature Range of storage temperature 1 Pwx10ys Duty cyclex1 96 2 L 5004H Vpp 50V Re 25Q T 25 C 9 Limited only by maximum channel temperature allowed 4 Te 25 C e Thermal resistance Parameter Symbol Unit Channel to Case Rth ch c C W Tc 25 C Limited only by maximum channel temperature allowed www rohm com 2011 ROHM Co Ltd All rights reserved 1 6 6 Dimensions Unit mm e Inner circuit 1 Gate 2 Drain 3 Source 1 BODY DIODE 2011 11 Rev A RCD060N25 Data Sheet e Electrical characteristics Ta 25 C Parameter Conditions Gate source leakage less 100 nA Vos 30V Vps 0V Drain source breakdown voltage News 250 T LX Ip21mA Ves 0V Zero gate voltage drain
4. d in the event of the failure of any Product such as derating redundancy fire control and fail safe designs ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual The Products are not designed or manufactured to be used with any equipment device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury such as a medical instrument transportation equipment aerospace machinery nuclear reactor controller fuel controller or other safety device ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes If a Product is intended to be used for any such special purpose please contact a ROHM sales representative before purchasing If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law you will be required to obtain a license or permit under the Law Thank you for your accessing to ROHM product informations More detail product informations and catalogs are available please contact us ROHM ROHM Customer Support System SEMICONDUCTOR http www rohm com contact www rohm com 2011 ROHM Co Ltd All rights reserved R1120A
5. heet Fig 13 Reverse Recovery Time vs Source Current ce e Reverse Recovery Time t ns 0 1 10 Source Current ls A www rohm com 2011 ROHM Co Ltd All rights reserved 5 6 2011 11 Rev A RCDO6ON25 e Measurement circuits Vos Ra 27 VDD Fig 1 1 Switching Time Measurement Circuit Ip Vas RL IG Const D U T Ra VDD Fig 2 1 Gate Charge Measurement Circuit 7 jas Vas O Vos pu L Ra Voo Fig 3 1 Avalanche Measurement Circuit www rohm com 2011 ROHM Co Ltd All rights reserved Pulse width td on ton toff Fig 1 2 Switching Waveforms Charge Fig 2 2 Gate Charge Waveform V BR DSS 1 2 Eas Le Le faste i n V BR bss V pD Fig 3 2 Avalanche Waveform 6 6 Data Sheet 2011 11 Rev A Notice Notes No copying or reproduction of this document in part or in whole is permitted without the consent of ROHM Co Ltd The content specified herein is subject to change for improvement without notice The content specified herein is for the purpose of introducing ROHM s products hereinafter Products If you wish to use any such Product please be sure to refer to the specifications which can be obtained from ROHM upon request Examples of application circuits circuit constants and any other information con
6. i pulsed 0 1 1 Drain Current Ip A 12 14 16 Gate Source Voltage Veg V Fig 11 Dynamic Input Characteristics Total Gate Charge Q nC O 2011 ROHM Co Ltd All rights reserved 10 Data Sheet Fig 8 Source Current vs Source Drain Voltage 10 pulsed T 125 C lt x 1 T 75 C 2 T 25 C T 25 C 2 5 O 0 9 2 01 0 01 0 0 1 5 2 0 Source Drain Voltage Vsp V Fig 10 Switching Characteristics 10000 Rg 100 T 25 C 1000 Pulsed T t p i 100 Laan D G la on z n 10 L 1 0 01 1 10 Drain Current lp A Fig 12 Typical Capacitance vs Drain Source Voltage 10000 T1 25 C f 1MHz 1000 a Cis O 9 100 amp Coss Q a O 10 Css 1 0 01 10 100 4 6 Drain Source Voltage Vps V 201 1 11 Rev A RCDO60N25 Data S
7. tained herein illustrate the standard usage and operations of the Products The peripheral conditions must be taken into account when designing circuits for mass production Great care was taken in ensuring the accuracy of the information specified in this document However should you incur any damage arising from any inaccuracy or misprint of such information ROHM shall bear no responsibility for such damage The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products ROHM does not grant you explicitly or implicitly any license to use or exercise intellectual property or other rights held by ROHM and other parties ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information The Products specified in this document are intended to be used with general use electronic equipment or devices such as audio visual equipment office automation equipment commu nication devices electronic appliances and amusement devices The Products specified in this document are not designed to be radiation tolerant While ROHM always makes efforts to enhance the quality and reliability of its Products a Product may fail or malfunction for a variety of reasons Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury fire or any other damage cause
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ROHM RCD060N25 Manual