ROHM RCX080N25 handbook
Contents
1. Fig 7 Forward Transfer Admittance vs Drain Current Fig 8 Source Current vs Source Drain Voltage 10 19 pulsed pulsed 8 T 125 C E T 75 C E E T 25 C SL dh T 25 C 4 v 0 i D 0 t S 5 Z U C a 12276 C is T 25 C Av a 0 1 T 25 C A 0 1 ir 0 01 0 01 0 01 0 1 1 10 0 0 0 5 1 0 1 5 Drain Current lp A Source Drain Voltage Vsp V Fig 9 Static Drain Source On State Resistance vs Gate Source Voltage Fig 10 Switching Characteristics 1500 10000 C Vpp 7125V Vos 1 OV gt 1300 IR Rg 102 o c T 25 C D 1000 Pulsed y 1100 oc E E t S o d S Ida PE 900 E O lt 100 8 5 E C 700 G latort KE z o S 500 e o 10 bg 300 t laton 100 1 0 2 4 6 8 10 12 14 16 18 20 0 01 0 1 1 10 Gate Source Voltage Veg V Drain Current Ip A Fig 11 Dynamic Input Characteristics Fig 12 Typical Capacitance vs Drain Source Voltage 10000 T 225 C f 1MHz Vos 0V Ciss gt 1000 6 oo 5 O amp on Z o b 100 9 Coss 2 Q O Q 7 O 10 Css 1 0 01 0 1 1 10 100 1000 Total Gate Charge Q nC Drain Source Voltage Vps V www rohm com 2011 ROHM Co Ltd All rights reserved A 6 2011 11 Rev A RCX080N25 Data Sheet Fig 13 Reverse Recovery Time vs Source Current2. Reverse Recovery Time t ns 0 1 10 Source Current ls A www rohm com 2011 ROHM Co Ltd All rights reserved 5 6 2011 11 Rev A RC X080N25 Data Sheet e Measurement circuits Pulse width Vps S Bir Vas 10 ton Lon Fig 1 1 Switching Time Measurement Circuit Fig 1 2 Switching Waveforms Va Vas p Vos Qg RL Vas IG Const k D U T Qgs Qga Ra V DD 777 Charge Fig 2 1 Gate Charge Measurement Circuit Fig 2 2 Gate Charge Waveform Vas 7 las O Vps L kK DUT Ra VDD V Bes Li Moon 77 2 V BR pss V DD Fig 3 1 Avalanche Measurement Circuit Fig 3 2 Avalanche Waveform www rohm com 2011 ROHM Co Ltd All rights reserved 6 6 2011 11 Rev A Notice Notes No copying or reproduction of this document in part or in whole is permitted without the consent of ROHM Co Ltd The content specified herein is subject to change for improvement without notice The content specified herein is for the purpose of introducing ROHM s products hereinafter Products If you wish to use any such Product please be sure to refer to the specifications which can be obtained from ROHM upon request Examples of application circuits circuit constants and any other information contained herein illustrate the standard usage and operations of the Products The peri
3. 50 Vv Vps710V lp21mA Static drain source on state mee opm qmm I5 4A Ves 10V resistance Forward transfer admittance Her 22 amp Vps710V Ip 4A Input capacitance FANS ENST Vps725V Output capacitance LO 5 nE Ves 0V Reverse transfer capacitance Ds dw Toe 31 5 3 pF f 1MHz Turn on delay time ton sl 22 ns Vena 125V Ip 4A Rise time ty 28 ns Veo Turn off delay time tom 28 ns HR 731 250 Fall time oc 14 f ns Raog Total gate charge al 15 nc Vop 125V 1528A Gate source charge ast 625 nc Vos710V Gate drain charge Qa 55 nC HR 715 620 Re 102 Pulsed eBody diode characteristics Source Drain Ve Le T ts LV Te vas Parameter Forward Voltage Pulsed www rohm com 2011 ROHM Co Ltd All rights reserved 2 6 2011 11 Rev A RCX080N25 Data Sheet eElectrical characteristic curves Ta 25 C Fig 1 Typical Output Characteristics I Fig 2 Typical Output Characteristics II Drain Current p A Drain Current lp A IR 0 0 0 2 0 4 0 6 0 8 1 0 2 4 6 8 10 Drain Source Voltage Vps V Drain Sou
4. ROHN Data Sheet SEMICONDUCTOR 10V Drive Nch MOSFET RCX080N25 e Structure 6 Dimensions Unit mm Silicon N channel MOSFET TO 220FM eFeatures 1 Low on resistance 2 Low input capacitance 3 High ESD e Application Switching e Packaging specifications e Inner circuit LL le Basic ordering unit pieces RCX080N25 1 Gate 2 Drain 3 Source 1 BODY DIODE e Absolute maximum ratings Ta 25 C Parameter Unit Drain source voltage V Gate source voltage V done A A Source current Continuous ls 8 A A Body Diode Avalanche current Avalanche energy mJ Power dissipation W Channel temperature C Range of storage temperature C 1 Pws lt 10us Duty cycle lt 1 2 L 5004H Vpp 50V Re 25Q T4 225 C 3 Limited only by maximum channel temperature allowed 4 Te 25 C e Thermal resistance Parameter Symbol Unit Channel to Case Rth ch c 3 57 C W Te 25 C Limited only by maximum channel temperature allowed www rohm com 2011 ROHM Co Ltd All rights reserved 1 6 2011 11 Rev A RC X080N25 Data Sheet e Electrical characteristics Ta 25 C Parameter Conditions Gate source leakage h less 100 nA Ves 430V Vps 0V Drain source breakdown voltage Verpss 250 v Ip 1mA Ves 0V Zero gate voltage drain current laas 1 ao W Vps7250V Vos 0V Gate threshold voltage Ves th Vestn 30
5. pheral conditions must be taken into account when designing circuits for mass production Great care was taken in ensuring the accuracy of the information specified in this document However should you incur any damage arising from any inaccuracy or misprint of such information ROHM shall bear no responsibility for such damage The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products ROHM does not grant you explicitly or implicitly any license to use or exercise intellectual property or other rights held by ROHM and other parties ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information The Products specified in this document are intended to be used with general use electronic equipment or devices such as audio visual equipment office automation equipment commu nication devices electronic appliances and amusement devices The Products specified in this document are not designed to be radiation tolerant While ROHM always makes efforts to enhance the quality and reliability of its Products a Product may fail or malfunction for a variety of reasons Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury fire or any other damage caused in the event of the failure of any Product such as derating redundancy fire con
6. rce Voltage Vps V Fig 3 Typical Transfer Characteristics Fig 4 Gate Threshold Voltage vs Channel Temperature 10 pulsed T1 125 C S 1 Ta 75 C g T 25 C 8 T T 25 C x 8 Oo z g S o D gt 5 0 1 D O D 2 E 9 0 01 5 0 001 0 2 4 6 8 10 50 25 0 25 50 75 100 125 150 Gate Source Voltage Vas V Channel Temperature T C Fig 5 Static Drain Source On State Resistance vs Drain Current Fig 6 Static Drain Source On State Resistance vs Channel Temperature 10000 2000 Vas 10V T 125 C pulsed T 75 C 1800 L a z T 25 C g g T 25 C c 1600 9 o O D o 1400 1000 cc m m Q a SE c E S 8 O 1000 E o S of 2 B oc B 2T 800 100 5 600 2 o amp E 400 200 10 S 0 01 0 1 1 10 100 Drain Current lp A Channel Temperature T C www rohm com 2011 ROHM Co Ltd All rights reserved 3 6 2011 11 Rev A RCX080N25 Data Sheet
7. trol and fail safe designs ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual The Products are not designed or manufactured to be used with any equipment device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury Such as a medical instrument transportation equipment aerospace machinery nuclear reactor controller fuel controller or other safety device ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes If a Product is intended to be used for any such special purpose please contact a ROHM sales representative before purchasing If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law you will be required to obtain a license or permit under the Law Thank you for your accessing to ROHM product informations More detail product informations and catalogs are available please contact us ROHM ROHM Customer Support System SEMICONDUCTOR http www rohm com contact www rohm com 2011 ROHM Co Ltd All rights reserved R1120A
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ROHM RCX080N25 handbook