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ROHM RQ1E070RP handbook

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1. Fig 1 Power Dissipation Derating Curve Fig 2 Maximum Safe Operating Area 120 Pw 10ms Pw 100 n x E a 80 x A a 7n XE A mn 60 c z iS o Operation in this area 2 p roe a 3 40 9 Gs DA 8 ijj a a T 25 C 5 20 Single Pulse Mounted on a ceramic board o 30mm x 30mm x 0 8mm 0 ug 0 50 100 150 200 0 1 1 10 100 Junction Temperature Tj C Drain Source Voltage Vps V Fig 3 Normalized Transient Thermal Fig 4 Single Pulse Maxmum Power dissipation Resistance vs Pulse Width 10 10000 iR T 25 C T 25C 8 Single Pulse Single Pulse S i 1000 8 o oc amp top D 1 g 100 D 0 5 Oo E 0 1 D 0 1 a D 0 05 c E D 0 01 g 10 E bottom Signle S 0 01 HE Rth ch a 83 3 C W e i m Rth ch a t r t x Rth ch a oO o o Mounted on ceramic board a 30mm x 30mm x 0 8mm tS E 0 001 0 1 5 0 0001 0 01 1 100 0 0001 0 01 1 100 Pulse Width Pw s Pulse Width Pw s www rohm com 2012 ROHM Co Ltd All rights reserved 4 11 2012 06 Rev B RQ1E070RP Data Sheet eElectrical characteristic curves Fig 5 Typical Output Characteristics l Fig 6 Typical Output Characteristics II 6 6 x x a cli m a z t 3 o
2. Fig 18 Typical Capacitance Fig 19 Switching Characteristics vs Drain Source Voltage 10000 10000 C ty off 1000 3 E i Oo S 8 1000 100 i a lator g Css joe wo o O E 10 Coss OD t 100 1 0 01 0 1 1 10 100 0 01 0 1 1 10 Drain Source Voltage Vps V Drain Current lp A Fig 20 Dynamic Input Characteristics Fig 21 Source Current vs Source Drain Voltage 10 10 Vps 0V gt 8 5 gt T 4 s 6 dl gj t C S c T 125 9 2 T 75 C o 4 3 T 25 C 9 0 1 o 5 T 25 C o pun o a M op w Oo 0 0 01 0 10 20 30 40 50 0 0 5 1 1 5 Total Gate Charge Q nC Source Drain Voltage Vsp V www rohm com 2012 ROHM Co Ltd All rights reserved 9 11 2012 06 Rev B RQ1E070RP Data Sheet eMeasurement circuits Fig 1 1 Switching Time Measurement Circuit Fig 1 2 Switching Waveforms Pulse width le Const www rohm com 2012 ROHM Co Ltd All rights reserved 10 11 noHm 2012 06 Rev B RQ1E070RP Data Sheet eDimensions Unit mm TSMT8 OO Patterm of terminal position areas MILIMET
3. Fig 15 Static Drain Source On State Fig 16 Static Drain Source On State Resistance vs Drain Current II Resistance vs Drain Current llI 1000 1000 8 3 S Vas 10V E Ves 4 5V i E T 125 C E T 125 C D T 75 C 9 Doe T 400 T 25 C o 100 T 95 C Wo T 25 C I a7 c oc c E c E D Que g Sg z o 10 aa 10 03 o c amp z ea a o 9 1 E 1 a 0 1 1 10 0 0 1 1 10 Drain Current lp A Drain Current lp A Fig 17 Static Drain Source On State Resistance vs Drain Current IV 1000 o e S Nauru OV T 125 C a T 75 Ta 25 9 100 T 25 C S aS EE O o 2 2 8 ot 10 Yn c m a 9 I 1 o 0 1 1 10 Drain Current lp A www rohm com 2012 ROHM Co Ltd All rights reserved 8 11 2012 06 Rev B RQ1E070RP Data Sheet eElectrical characteristic curves
4. 2 S 2 c S a 0 0 0 0 2 0 4 0 6 0 8 1 0 2 4 6 8 10 Drain Source Voltage Vps V Drain Source Voltage Vps V www rohm com 2012 ROHM Co Ltd All rights reserved 5 11 2012 06 Rev B RQ1E070RP Data Sheet eElectrical characteristic curves Fig 7 Breakdown Voltage Fig 8 Typical Transfer Characteristics _ vs Junction Temperature 60 10 e a Vps 10V gt a 1 2 40 T T 125 C S T 75 Q T T 25 gt Ps a s z 0 1 T 25 o g 5 20 O o a S 0 01 a 2 2 o 05 c 0 0 001 d 50 0 50 100 150 0 1 2 3 a Junction Temperature T C Gate Source Voltage Ves V Fig 9 Gate Threshold Voltage Fig 10 Transconductance vs Drain Current vs Junction Temperature 3 100 Vps 10V S DS gt 2 E 10 o gt E T 25 C 9 25 9 1 S s T 25 C E D Ta 75 C E T 25 C He 9 IL LLL s Oo 0 0 1 50 0 50 100 150 0 01 0 1 1 10 Junction Temperature T C Drain Current Ip A www rohm com 2012 ROHM Co Ltd All rights reserved 6 11 2012 06 Rev B RQ1E070RP eElectrical characteri
5. 25 C Ves 10V I 7A Static drain source R Vas 4 5V Ip 3 5A az am 2 NON on state resistance 0 Vas 4 0V Ip 3 5A Transconductance Gate input resistannce fen 1MHz open drain 1 Limited only by maximum temperature allowed 2 Pw lt 10us Duty cycle lt 1 3 Mounted on a ceramic board 30x30x0 8mm 4 Mounted on a FR4 20x20x0 8mm 5 Pulsed www rohm com 2012 ROHM Co Ltd All rights reserved 2 11 2012 06 Rev B RQ1E070RP Data Sheet eElectrical characteristics T 25 C Parameter Symbol Conditions Mn Typ Max Unit Ciss Input capacitance ju Output capacitance oss Reverse transfer capacitance Turn on delay time taon Vpp 15V Veg 10V Rise time t Ip 3 5A Turn off delay time Fall time h eGate Charge characteristics T 25 C Parameter Symbol Conditions Vbo 15V lp 2 7A Ves 5V Total gate charge Vop 15V lp 2 7A Gate Source charge i Vos d bM Ip 7A Gate Drain charge 5 Vaes 5V Inverse diode continuous forward current Forward voltage www rohm com 2012 ROHM Co Ltd All rights reserved 3 11 2012 06 Rev B RQ1E070RP Data Sheet eElectrical characteristic curves
6. ERS INCHES MIN MAX MIN MAX 0 03 0 033 000 005 0 002 0 12 0 22 0 005 0 009 0114 0091 0 03 0 108 004 0012 0 122 0 098 0 012 0 004 0 012 0 007 0 015 0 19 0 39 0 007 0 015 0 10 0 004 ee oo j 0 004 INCHES MN MAX 0 10 Dimension in mm inches MAX www rohm com 2012 ROHM Co Ltd All rights reserved 11 11 2012 06 Rev B Notice Notes No copying or reproduction of this document in part or in whole is permitted without the consent of ROHM Co Ltd The content specified herein is subject to change for improvement without notice The content specified herein is for the purpose of introducing ROHM s products hereinafter Products If you wish to use any such Product please be sure to refer to the specifications which can be obtained from ROHM upon request Examples of application circuits circuit constants and any other information contained herein illustrate the standard usage and operations of the Products The peripheral conditions must be taken into account when designing circuits for mass production Great care was taken in ensuring the accuracy of the information specified in this document However should you incur any damage arising from any inaccuracy or misprint of such information ROHM shall bear no responsibility for such damage The technical information specified herein is intended only to show the typical functions of and examples of application
7. RQ1EO70RP Pch 30V 7A Power MOSFET Vises 30V Rps on Max 17mO Ip 7A Pp 1 5W eFeatures 1 Low on resistance 2 Built in G S Protection Diode 3 Small Surface Mount Package TSMTS 4 Pb free lead plating RoHS compliant e Application DC DC converters e Absolute maximum ratings T 25 C Parameter Drain Source voltage Continuous drain current Pulsed drain current Gate Source voltage Power dissipation Junction temperature Range of storage temperature www rohm com 2012 ROHM Co Ltd All rights reserved Datasheet eOutline einner circuit 8 0 6 o o o 1 ESD PROTECTION DIODE a 2 BODY DIODE ePackaging specifications Tape width mm L9 Basic ordering unit pcs 3 000 Unit ee 2012 06 Rev B RQ1E070RP Data Sheet eThermal resistance Values Parameter Symbol Ves Unit Thermal resistance junction ambient Re c 833 C W i 227 Thermal resistance junction ambient C W Electrical characteristics T 25 C Values Parameter Symbol Conditions Values Unit Ew me we Drain Source breakdown voltage Breakdown voltage temperature coefficient J Zero gate voltage drain current Vos 30V Ves OV P foe a g Gate Source leakage current 20V Vps OV ee Gate threshold voltage Vos 10V lp 2 1mA coe Gate threshold voltage AVesyth_ Ip 1mA temperature coefficient AT referenced to
8. circuits for the Products ROHM does not grant you explicitly or implicitly any license to use or exercise intellectual property or other rights held by ROHM and other parties ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information The Products specified in this document are intended to be used with general use electronic equipment or devices such as audio visual equipment office automation equipment commu nication devices electronic appliances and amusement devices The Products specified in this document are not designed to be radiation tolerant While ROHM always makes efforts to enhance the quality and reliability of its Products a Product may fail or malfunction for a variety of reasons Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury fire or any other damage caused in the event of the failure of any Product such as derating redundancy fire control and fail safe designs ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed Scope or not in accordance with the instruction manual The Products are not designed or manufactured to be used with any equipment device or System which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury such as a m
9. edical instrument transportation equipment aerospace machinery nuclear reactor controller fuel controller or other safety device ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes If a Product is intended to be used for any such special purpose please contact a ROHM sales representative before purchasing If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law you will be required to obtain a license or permit under the Law Thank you for your accessing to ROHM product informations More detail product informations and catalogs are available please contact us ROHM ROHM Customer Support System SEMICONDUCTOR http www rohm com contact www rohm com 2012 ROHM Co Ltd All rights reserved R1120A
10. stic curves Fig 11 Drain CurrentDerating Curve 1 2 a j tS E a Ll 08 6 06 Es 2 B 04 a E P ds 2 oO an o 25 0 25 50 75 100 125 150 Junction Temperature T C Fig 13 Static Drain Source On State Resistance vs Drain Current l 1000 Static Drain Source On State Resistance Boso MQ Drain Current lp A www rohm com 2012 ROHM Co Ltd All rights reserved Static Drain Source On State Resistance Static Drain Source On State Resistance 7 11 Data Sheet Fig 12 Static Drain Source On State 100 80 20 Resistance vs Gate Source Voltage Gate Source Voltage Ves V Fig 14 Static Drain Source On State 30 20 Resistance vs Junction Temperature 50 25 0 25 50 75 100 125 150 Junction Temperature T C 2012 06 Rev B RQ1E070RP Data Sheet eElectrical characteristic curves

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