ROHM RRH100P03 Manual
Contents
1. 1 2 100 o o S S D S ic GEN 0 8 EE f A ya e 50 O xX 0 6 c E S ek S i bi c CH 0 2 T a o 0 0 25 0 25 50 75 100 125 150 do 0 5 10 15 Junction Temperature T C Gate Source Voltage Vos V Fig 15 Static Drain Source On State Fig 16 Static Drain Source On State Resistance vs Drain Current l Resistance vs Junction Temperature 100 8 o S e 3 n Ke g 2 aA G ne aS 6 10 SE o a O o m a cc n o c F c T a 5 Ves 10V o Le 10 0A S 1 G i SS 0 1 1 10 100 e 50 25 0 25 50 75 100 125 150 Drain Current lp A Junction Temperature T C www rohm com 2012 ROHM Co Ltd All rights reserved 7 1 2012 06 Rev C RRH100P03 Data Sheet eElectrical characteristic curves Fig 17 Static Drain Source On State Fig 18 Static Drain Source On State Resistance vs Drain Current ll Resistance vs Drain Current III 100 100 Vas 1 OV Noe 4 5V m m A444 Di m Il c1 10 O Static D2. 10000 T 25 C Single Pulse 1000 100 10 1 0 0001 0 01 1 100 Pulse Width Py s 2012 06 Rev C RRH100P03 Data Sheet eElectrical characteristic curves Fig 5 Avalanche Current vs Inductive Load Fig 6 Avalanche Energy Derating Curve vs Junction Temperature 100 120 Starting T 25 C Vpp 15V 22 Ves 1 OV x 1 00 Yo T Rg 102 g E 10 Single Pulse 2 8096 ka UI t Bd D uf 60 5 Sg o 5 o 4 409 E e ui amp o y 5 20 T G T 0 1 Z 0 0 01 0 1 1 10 100 0 25 50 75 100 125 150 175 Coil Inductance L mH Junction Temperature T C Fig 7 Typical Output Characteristics l Fig 8 Typical Output Characteristics II 20 20 18 18 16 16 lt a u SS di 42 H Noe 4 0V 5 s n Ves 3 4V 5 g Vasc 3 2V O Oo Ves 3 0V S 8 6 Vos 2 8V a a 4 2 T 25 C Noe 2 4V 0 0 0 0 2 0 4 0 6 0 8 1 0 0 2 4 6 8 10 Drain Source Voltage Vps V Drain Source Voltage Vps V www rohm com 2012 ROHM Co Ltd All rights reserved 5 11 2012 06 Rev C RRH100P03 Data Sheet eE
3. 100A us 6 Pulsed www rohm com 2012 ROHM Co Ltd All rights reserved 3 11 EXER v 2012 06 Rev C RRH100P03 eElectrical characteristic curves Fig 1 Power Dissipation Derating Curve 120 3 100 x E a 80 a h a os 60 c amp 40 o Ku Q zo 20 0 z a 0 0 50 100 150 200 Junction Temperature Tj C Fig 3 Normalized Transient Thermal Resistance vs Pulse Width www rohm com 10 L T 25 C e Single Pulse D ER 1 es E D top D 1 ZC 0 1 D 0 5 D 0 1 es D 0 05 2 D 0 01 5 bottom Signle E 0 01 Rth ch a 62 5 C W 9 Rth ch a t r t x Rth ch a IN Mounted on ceramic board E 30mm x 30mm x 0 8mm 5 0 001 z 0 0001 0 01 1 100 Pulse Width Py s 2012 ROHM Co Ltd All rights reserved Drain Current lp A P W Peak Transient Power 4 11 Data Sheet Fig 2 Maximum Safe Operating Area 100 Operation in this area is limited by Rps on 8 Veg 10V 0 1 T 25 C Single Pulse Mounted on a ceramic board 30mm x 30mm x 0 8mm f 0 01 0 1 1 10 100 Drain Source Voltage Vps V Fig 4 Single Pulse Maxmum Power dissipation
4. 0189 0205 e 1 27 0 05 heich 0 10 0 004 ow MENES EE MAX MN MAX t oe 002 ei 51 020 J n TI 11 904 Dimension in mm inches www rohm com 2012 ROHM Co Ltd All rights reserved 11 1 2012 06 Rev C Notice Notes No copying or reproduction of this document in part or in whole is permitted without the consent of ROHM Co Ltd The content specified herein is subject to change for improvement without notice The content specified herein is for the purpose of introducing ROHM s products hereinafter Products If you wish to use any such Product please be sure to refer to the specifications which can be obtained from ROHM upon request Examples of application circuits circuit constants and any other information contained herein illustrate the standard usage and operations of the Products The peripheral conditions must be taken into account when designing circuits for mass production Great care was taken in ensuring the accuracy of the information specified in this document However should you incur any damage arising from any inaccuracy or misprint of such information ROHM shall bear no responsibility for such damage The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products ROHM does not grant you explicitly or implicitly any license to use
5. Drain Source Voltage 10000 10000 td off C 1000 uz Iss ECH H 1000 S o z o S Cis E 100 G 9 Coss 2 8 100 5 3 10 T 25 C Oo tr td on f 1MHz Vas 0V 10 1 0 01 0 1 1 10 100 0 01 0 1 1 10 100 Drain Source Voltage Vps V Drain Current lp A Fig 22 Dynamic Input Characteristics Fig 23 Source Current vs Source Drain Voltage 100 Ves OV 2 10 gt lt 2 e T 125 C Ta 75 C D a S E 1 Ta 2510 E D T 25 5 9 Oo 2 9 a 0 1 D Re w O 0 01 0 10 20 30 40 50 60 70 0 0 0 2 0 4 0 6 0 8 1 0 1 2 Total Gate Charge Q nC Source Drain Voltage Vps V www rohm com 2012 ROHM Co Ltd All rights reserved 9 11 2012 06 Rev C RRH100P03 Data Sheet eMeasurement circuits Fig 1 1 Switching Time Measurement Circuit Fig 1 2 Switching Waveforms Pulse width Ves O IG Const V BR DsS V BR Dss Vi BR bss Voo www rohm com 2012 ROHM Co Ltd All rights reserved 10 11 ROHM 2012 06 Rev C RRH100P03 Data Sheet eDimensions Unit mm SOP8 L1 Lp 2 Patterm of terminal position areas mn e EN MAX MN MA LA Lis Le Ooa ois ooo A2 140 160 0055 0063 Eegenheem es b 030 050 0012 002 c 010 030 0004 0012 D 480 520
6. Gate threshold voltage AV csin p 1mA temperature coefficient AT referenced to 25 C Vase 10V lp 10A E Static drain source Ves 4 5V lp 5A Roscon on state resistance d Vas 4 0V Ip 5A Gate input resistannce SE 1MHz open drain Transconductance Vps 10V lp 2 10A 1 Limited only by maximum temperature allowed 2 Pw lt 10us Duty cycle lt 1 8 L 10uH Vpp 15V Rg 2590 starting T 25 C 4 Mounted on a ceramic board 30x30x0 8mm 5 Mounted on a FR4 20x20x0 8mm www rohm com 2012 ROHM Co Ltd All rights reserved 2 11 2012 06 Rev C RRH100P03 Electrical characteristics T 25 C Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Vbo 15V Vas 10V Rise time lp 5A Turn off delay time 9 IR 23 00 Fall time Re 100 eGate Charge characteristics T 25 C Parameter Symbol Conditions Vbo 15V lp 2 10A Ves DN Total gate charge Vop 15V Ip 10A Gate Source charge Vbo JEM Ip 10A dE O Q o Gate Drain charge O Q Q o eBody diode electrical characteristics Source Drain T4 25 C Parameter Symbol Conditions Forward voltage Vas OV l 10A Data Sheet Values x we me vax pF ns Unit nC CECI Inverse diode continuous 9500 A forward current Reverse recovery time ls 10A Reverse recovery charge e di dt
7. or exercise intellectual property or other rights held by ROHM and other parties ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information The Products specified in this document are intended to be used with general use electronic equipment or devices such as audio visual equipment office automation equipment commu nication devices electronic appliances and amusement devices The Products specified in this document are not designed to be radiation tolerant While ROHM always makes efforts to enhance the quality and reliability of its Products a Product may fail or malfunction for a variety of reasons Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury fire or any other damage caused in the event of the failure of any Product such as derating redundancy fire control and fail safe designs ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed Scope or not in accordance with the instruction manual The Products are not designed or manufactured to be used with any equipment device or System which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury such as a medical instrument transportation equipment aerospace machinery nuclear reactor controller fu
8. RRH100P03 Pch 30V 10A Power MOSFET Datasheet eOutline Vines 30V Ros on Max 12 6mQ Ip 10A Pp 2 0W eFeatures Inner circuit 1 Low on resistance 1 Source 5 Drain 2 Source 6 Drain 3 Source 7 Drain 4 Gate 8 Drain 2 Built in G S Protection Diode 3 Small Surface Mount Package SOP8 4 Pb free lead plating RoHS compliant 1 ESD PROTECTION DIODE 2 BODY DIODE ePackaging specifications e Application diem 1 1 DC DC Converter Tape width mm Basic ordering unit pcs 2 500 e Absolute maximum ratings T 25 C Parameter Unit Drain Source voltage V Continuous drain current A Pulsed drain current A Gate Source voltage eS V Avalanche energy single pulse Exe 08 mJ Power dissipation Range of storage temperature 55 to 150 C www rohm com 2012 ROHM Co Ltd All rights reserved 1 11 2012 06 Rev C RRH100P03 Data Sheet eThermal resistance Values Parameter Symbol Values Unit Thermal resistance junction ambient O Raat 625 C W 5 Thermal resistance junction ambient C W Electrical characteristics T 25 C Values Parameter Symbol Conditions Values Unit Ew me we Drain Source breakdown voltage Breakdown voltage temperature coefficient J Zero gate voltage drain current Vos 30V Ves OV WEIEREN Gate Source leakage current Vas 20V Vps OV ot EDS Gate threshold voltage Vos 10V lp 2 1mA
9. el controller or other safety device ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes If a Product is intended to be used for any such special purpose please contact a ROHM sales representative before purchasing If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law you will be required to obtain a license or permit under the Law Thank you for your accessing to ROHM product informations More detail product informations and catalogs are available please contact us ROHM ROHM Customer Support System SEMICONDUCTOR http www rohm com contact www rohm com 2012 ROHM Co Ltd All rights reserved R1120A
10. lectrical characteristic curves Fig 9 Breakdown Voltage Fig 10 Typical Transfer Characteristics vs Junction Temperature Z 100 2 T Vps 10V e gt e 10 D T T 125 C 2 Ta 75 C D T 25 C c t 1 T 25 C z D o E g 5 x o o ES a S 04 o a e 2 o Re c 0 01 e 50 0 50 100 150 1 0 1 5 2 0 2 5 3 0 a Junction Temperature T C Gate Source Voltage Ves V Fig 11 Gate Threshold Voltage Fig 12 Transconductance vs Drain Current vs Junction Temperature 3 100 Vps 10V gt E Rei o o 2 gt 2 10 aA S 0 o S 8 T 25 9 9 T 25 5 T 75 1 9 1 T 125 C ed o e c o D E g 1 O d 0 50 0 50 100 150 0 1 1 10 100 Junction Temperature T C Drain Current lp A www rohm com 2012 ROHM Co Ltd All rights reserved 6 11 2012 06 Rev C RRH100P03 Data Sheet eElectrical characteristic curves Fig 13 Drain CurrentDerating Curve Fig 14 Static Drain Source On State Resistance vs Gate Source Voltage
11. rain Source On State Resistance Ros on MQ o Static Drain Source On State Resistance 0 1 1 10 100 0 1 1 10 100 Drain Current lp A Drain Current lp A Fig 19 Static Drain Source On State Resistance vs Drain Current IV 100 8 5 Ves 4 0V p o oO tc o S HE 6 210 o 5 e 8 S T 125 C Oo T 75 C T 25 C c T Ta 25 C Q o w 1 o 0 1 1 10 100 Drain Current lp A www rohm com 2012 ROHM Co Ltd All rights reserved 8 11 2012 06 Rev C RRH100P03 Data Sheet eElectrical characteristic curves Fig 20 Typical Capacitance Fig 21 Switching Characteristics vs
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ROHM RRH100P03 Manual