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ROHM RSD100N10 Manual

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1. Fig 7 Forward Transfer Admittance vs Drain Current Fig 8 Typical Transfer Characteristics 100 t09 pulsed pulsed 10 9 10 G E lt T 125 C 5 T 125 C 2 16 terre oe T 75 C E Lo T 25 C oO c 5 T 1 T s25 C T4 25 C ha T 25 C o D g 0 1 G Q Oo LL 0 1 0 01 0 01 0 001 0 01 0 1 1 10 100 0 0 0 5 1 0 1 5 2 0 2 5 3 0 9 5 Drain Current Ip A Gate Source Voltage Ves V Fig 9 Source Current vs Source Drain Voltage Fig 10 Static Drain Source On State Resistance vs Gate Source Voltage 100 250 pulsed S T 125 C S E zd Tas Y o T 25 C s js T 25 C 8 Ee 150 5 cE 5 1 O E o S g o 2 z 8 100 o a 0 1 50 n 0 01 0 0 0 0 5 1 0 1 5 2 0 Source Drain Voltage Vsp V Gate Source Voltage Vas V Fig 11 Switching Characteristics Fig 12 Dynamic Input Characteristic
2. T T o E 5 5 E c S a Drain Source Voltage Vps V Drain Source Voltage Vps V Fig 3 Static Drain Source On State Resistance vs Drain Current Fig 4 Static Drain Source On State Resistance vs Drain Current 1000 1000 ulsed o P T 125 C 9 o T 5 C S S T 25 C 1 T 25 C cc cc T T aS od cE c E O 2 100 9 s 100 S g S 5 8 E c T T S 9 S I a a 10 10 0 01 0 1 1 10 100 0 01 0 1 1 10 100 Drain Current lp A Drain Current Ip A Fig 5 Static Drain Source On State Resistance vs Drain Current Fig 6 Static Drain Source On State Resistance vs Drain Current 1000 Ves 4 5V M ail pulsed Ta 125 C 9 T 75 C 9 S T 25 C S a T 25 C a c or S I oc o 5e o 100 n O o o so 3 O or O 0p 0p c c 8 8 a O S 9 I I on on 10 0 01 0 1 1 10 100 Drain Current Ip A Drain Current Ip A www rohm com 2011 ROHM Co Ltd All rights reserved 3 6 2011 06 Rev A RSD100N10 Data Sheet
3. C ss z Rth ch a t r t x Rth on a 10 0 0001 0 01 0 1 1 10 100 1000 0 0001 0 001 0 01 0 1 1 10 100 1000 Drain Source Voltage Vps V Pulse width Pw s Fig 15 Maximum Safe Operating Area 100 Operation in this area is limited by Rog on Vas 10V 10 lt 2 Pw 100us 5 1 5 O g O 0 1 as Ome DC Operation Te 25 C Single Pulse 0 01 0 1 1 10 100 1000 Drain Source Voltage Vps V www rohm com 2011 ROHM Co Ltd All rights reserved 5 6 2011 06 Rev A RSD100N10 Data Sheet e Measurement circuits Pulse width Vas p Vps z RL D U T Re __ Vpp 77 ton tor Fig 1 1 Switching Time Measurement Circuit Fig 1 2 Switching Waveforms Va Vas lt 15 Vps RL H IG Const 7 S D U T VDD Charge Fig 2 1 Gate Charge Measurement Circuit Fig 2 2 Gate Charge Waveform www rohm com 2011 ROHM Co Ltd All rights reserved 6 6 2011 06 Rev A Notice Notes No copying or reproduction of this document in part or in whole is permitted without the consent of ROHM Co Ltd The content specified herein is subject to change for improvement without notice The content specified herein is for the purpose of introducing ROHM s products hereinafter Products If you wish to use any such Product please be sure to refer to the specifications which can be obtained from ROHM upon request Examples of application circuits circuit constants and any o
4. ROHN Data Sheet SEMICONDUCTOR 4V Drive Nch MOSFET RSD100N10 e Structure Dimensions Unit mm Silicon N channel MOSFET CPT3 SC 63 lt SOT 428 gt eFeatures 1 Low on resistance 2 4V drive 3 High power package e Application Switching e Packaging specifications e Inner circuit Package Code Basic ordering unit pieces RSD100N10 1 Gate 2 Drain 1 ESD PROTECTION DIODE 3 Source 2 BODY DIODE e Absolute maximum ratings Ta 25 C Parameter Unit Drain source voltage Gate source voltage Source current Body Diode Power dissipation Channel temperature Range of storage temperature C 1 Pws10ys Duty cyclex1 96 2 Tc 25 C oO sS 3 Please use within the range of SOA e Thermal resistance Parameter Symbol Unit Channel to Case Rth ch c 625 C W Tc 25 C www rohm com 2011 ROHM Co Ltd All rights reserved 1 6 2011 06 Rev A RSD100N10 e Electrical characteristics Ta 25 C Parameter Gate source leakage Conditions les f 10 m Vos 220V Vos 0V Drain source breakdown voltage eases d88 T do SE Ipz1mA Ves 0V Zero gate voltage drain current Gate threshold voltage Static drain source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Rise time T
5. s 10000 Vpp 50V Rg 100 T 25 C _ 1000 Pulsed Z o B gt Hm v o D E E Lr D 100 d off 9 o 5 o 2 3 talon t O 10 1 0 01 0 1 1 10 100 Drain Current Ip A Total Gate Charge Q nC www rohm com 2011 ROHM Co Ltd All rights reserved A 6 2011 06 Rev A RSD100N10 Data Sheet Fig 13 Typical Capacitance vs Drain Source Voltage Fig 14 Normalized Transient Thermal Resistance v s Pulse Width 10000 10 T 25 C H T 25C rie x Single Pulse Vgs 0V ingle Fu o 1 o c S 2 o m 1000 E iss 0 1 C gt E S 0 01 f o O 100 S H 0 001 Mounted on a recommended land Coss m 20mm x 20mm x 0 8mm E Rthena t11 7 C W
6. ther information contained herein illustrate the standard usage and operations of the Products The peripheral conditions must be taken into account when designing circuits for mass production Great care was taken in ensuring the accuracy of the information specified in this document However should you incur any damage arising from any inaccuracy or misprint of such information ROHM shall bear no responsibility for such damage The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products ROHM does not grant you explicitly or implicitly any license to use or exercise intellectual property or other rights held by ROHM and other parties ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information The Products specified in this document are intended to be used with general use electronic equipment or devices such as audio visual equipment office automation equipment commu nication devices electronic appliances and amusement devices The Products specified in this document are not designed to be radiation tolerant While ROHM always makes efforts to enhance the quality and reliability of its Products a Product may fail or malfunction for a variety of reasons Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury fire or an
7. urn off delay time Fall time Total gate charge Gate source charge Gate drain charge Pulsed toss 1 m Vo s 100V Ves 0V Vos 1 25 V_ Vos 10V In tma 95 133 Ip 5A Ves 10V Rosin 100 140 mo I5 5A Vas 4 5V 105 147 Mo 5A Vas 4V Ysi 45 S Vos 10V 1p 5A Cs 700 pF Vos 25V Ou e P j pF Ves 0v Cs 40 pF ffm tut 10 ns _ Voos 50V 15A oth 17 ns veo tam 50 ns R 100 pt th 2 ns Rag 18 nC Vos 50V 15 10A Qs 2 fne Ves t0v a jJ 45 jJ qnc eBody diode characteristics Source Drain Parameter Forward Voltage Pulsed www rohm com Conditions CVs LL i TV BEA vestv 2011 ROHM Co Ltd All rights reserved 2 6 Data Sheet 2011 06 Rev A RSD100N10 Data Sheet eElectrical characteristic curves Ta 25 C Fig 1 Typical Output Characteristics I Fig 2 Typical Output Characteristics II
8. y other damage caused in the event of the failure of any Product such as derating redundancy fire control and fail safe designs ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual The Products are not designed or manufactured to be used with any equipment device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury such as a medical instrument transportation equipment aerospace machinery nuclear reactor controller fuel controller or other safety device ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes If a Product is intended to be used for any such special purpose please contact a ROHM sales representative before purchasing If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law you will be required to obtain a license or permit under the Law Thank you for your accessing to ROHM product informations More detail product informations and catalogs are available please contact us ROHM ROHM Customer Support System SEMICONDUCTOR http www rohm com contact www rohm com 2011 ROHM Co Ltd All rights reserved R1120A

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