ROHM Semiconductor RSM002P03 Data Sheet
Contents
1. 25 1000 ue eo O e Vas 0V Vas 10VI Maarten T T SE gt SS 2 Ciss g tf pulsed Ay Pulsed o LL Ce 100 LLI LU g Oo td off ES z 10 E ej Oj gt G z LU S 5 e lt as E Se 2 ki Coss D tr E 1 oO 0 01 0 1 1 0 100 1 0 0 01 oi 1 0 0 2 0 4 0 6 0 8 1 DRAIN SOURCE VOLTAGE Vos V DRAIN CURRENT I A TOTAL GATE CHARGE Qg nC Fig 1 Typical Capacitance S vs Drain Source Voltage Fig 2 Switching Characteristics Fig 3 Dynamic Input Characteristics 1 Vos 10V 1 Ta 25 C Pulsed E Pulsed g Be Pi 5 E H y 5 To 04 ww E Qe E z l Li ae gt be Qo O o a DG zu z O TE ZS Z 001 cw 5 lt on w 5 SE 2 E o Ez LI aS 1 E 0 01 14 1 6 18 20 22 24 26 28 3 0 32 3 4 0 1 2 3 4 5 6 7 8 9 10 00 02 04 06 08 10 12 14 1 6 GATE SOURCE VOLTAGE Mes V GATE SOURCE VOLTAGE Ves V SOURCE DRAIN VOLTAGE Vso V A ss Fig 5 Static Drain Source i i Fig 4 Typical Transfer Characteristics g Fig 6 Reverse Drain Current vs On State Resistance vs Source Drain Voltage Gate Source Voltage 10 Vas 10V pu Vas 4 5V e Vas 4V a Pulsed a SE Pulsed a ETE Pulsed E z T E Ge e 2520 e 25 C As 25 C 25 C2. W LU LU LU L LU LU QO QO QO SE Ez E 1 Bo 90 ER zu zu zu a a E aw op at oct oc ot ES kt kO Ez Hz 58 no no WMO a 0 1 A 0 01 0 1 1 0 01 0 1 1 0 01 0 1 1 DRAIN CURRENT lo A DRAIN CURRENT o A DRAIN CURRENT lo A Fig 7 Static Drain Source Fig 8 Static Drain Source Fig 9 Static Drain Source On State Resistance On State Resistance On State Resistance vs Drain Current 1 vs Drain Current 11 vs Drain Current III Rev A 3 4 RSMO02P03 Transistors Ta 25 C Pulsed STATIC DRAIN SOURCE ON STATE RESISTANCE Ros on Q 0 01 0 1 1 DRAIN CURRENT o A n ig 10 Static Drain Source On State Resistance vs Drain Current IV Rev A 4 4 Appendix Notes O No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO LTD O The contents described herein are subject to change without notice The specifications for the product described in this document are for reference only Upon actual use therefore please request that specifications to be separately delivered O Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the se
3. threshold voltage Ves th 1 0 2 5 V Vos 10V lo 1mA NN 09 14 Q lo 0 2A Ves 10V Static drain source on state usr EE 21 a ib 15A Vee 45V resistance 1 6 2 4 Q lo O 15A Vas 4 0V Forward transfer admittance Yis 0 2 S Vos 10V lo 0 15A Input capacitance Ciss 30 pF Vos 10V Output capacitance Coss 4 pF Ves 0V Reverse transfer capacitance Crss 5 DE f 1MHz Turn on delay time ta om 8 ns Voo 15V Rise time tr 5 ns EE Turn off delay time ta otr 30 ns_ R 1000 Fall time t 40 ns Re 100 Pulsed Body diode characteristics Source drain Ta 25 C Parameter Conditions Forward voltage Vso 12 v Is 0 1A Vas 0V Rev A 2 4 RSMO02P03 Transistors Electrical characteristics curves 100
4. Transistors RSMO002P03 AV Drive Pch MOSFET RSM002P03 SStructure Dimensions Unit mm Silicon P channel MOSFET Features 1 Low On resistance 2 Small package VMT3 3 4V drive Applications Abbreviated symbol WP Switching Packaging specifications Slnner circuit Package Taping Type Code T2L Basic ordering unit pieces 8000 RSM002PO3 O Absolute maximum ratings Ta 25 C 1 Gate 1 ESD PROTECTION DIODE 2 Source 2 BODY DIODE 3 Drain Parameter Symbol Limits Unit Drain source voltage Voss 30 V Gate source voltage Vass 20 Vv Bnei Continuous lo 0 2 A Pulsed lop I 0 4 A Total power dissipation Pp 2 0 15 W Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C zl Pws10us Duty cycles1 2 Each terminal mounted on a recommended land Thermal resistance Parameter Symbol Channel to ambient Rth ch a Each terminal mounted on a recommended land Rev A 1 4 Transistors Electrical characteristics Ta 25 C RSMO002P03 Parameter Symbol Min Typ Max Unit Conditions Gate source leakage lass 10 uA Vas 20V Vos 0V Drain source breakdown voltage V rn pss 30 V lo 1mA Vas 0V Zero gate voltage drain current loss 1 HA Vos 30V Vas 0V Gate
5. llers fuel controllers and other safety devices please be sure to consult with our sales representative in advance About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 Item 16 of Export Trade Control Order in Japan In case of export from Japan please confirm if it applies to objective criteria or an informed by MITI clause on the basis of catch all controls for Non Proliferation of Weapons of Mass Destruction Appendix1 Rev1 1
6. t Any data including but not limited to application circuit diagrams information described herein are intended only as illustrations of such devices and not as the specifications for such devices ROHM CO LTD disclaims any warranty that any use of such devices shall be free from infringement of any third party s intellectual property rights or other proprietary rights and further assumes no liability of whatsoever nature in the event of any such infringement or arising from or connected with or related to the use of such devices Upon the sale of any such devices other than for buyer s right to use such devices itself resell or otherwise dispose of the same no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by O ROHM CO LTD is granted to any such buyer O Products listed in this document are no antiradiation design The products listed in this document are designed to be used with ordinary electronic equipment or devices such as audio visual equipment office automation equipment communications devices electrical appliances and electronic toys Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life such as medical instruments transportation equipment aerospace machinery nuclear reactor contro
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ROHM Semiconductor RSM002P03 Data Sheet