ROHM RUE002N05 Manual
Contents
1. Ta 25 C Vpp 30V Ves 4 5V Rg 100 Pulsed 10 SWITCHING TIME t ns 0 01 0 1 DRAIN CURRENT lA Fig 13 Switching Characteristics www rohm com 2010 ROHM Co Ltd All rights reserved SOURCE CURRENT L A CAPACITANCE C pF Ves 0V Pulsed 0 1 Ta 125 C Ta 75 C Ta 25 C Ta 25 C 0 01 0 5 1 1 5 SOURCE DRAIN VOLTAGE Vsp V Fig 11 Reverse Drain Current vs Sourse Drain Voltage 1000 Ta 25 C f 1MHz 100 iVes 9V Ciss 10 C 4 res ome 0 1 0 01 0 1 1 10 100 DRAIN SOURCE VOLTAGE Vps V Fig 14 Typical Capacitance vs Drain Source Voltage 4 5 STATIC DRAIN SOURCE ON STATE RESISTANCE Rg amp ON O O gt N WwW A Oi DN CO O O Data Sheet 5 10 GATE SOURCE VOLTAGE Ves V Fig 12 Static Drain Source On State Resistance vs Gate Source Voltage 2010 06 Rev B RUE2. ROHM wa Data Sheet SEMICONDUCTOR 1 1 2V Drive Nch MOSFET RUE002N05 e Structure e Dimensions Unit mm Silicon N channel MOSFET EMT3 SC 75A lt SOT 416 gt eFeatures 1 High speed switing 2 Small package EMT3 3 Ultra low voltage drive 1 2V drive Abbreviated symbol RH e Application Switching e Packaging specifications e Inner circuit Package Code Basic ordering unit pieces RUEO002NO05 O 1 e Absolute maximum ratings Ta 25 C Parameter Unit l e nmm Drain source voltage V 3 DRAIN 2 ESD PROTECTION DIODE Gate source voltage V brain curent feortinwous w 3200 mA mA Source current mA Pedy Dick mA Power dissipation mW Channel temperature C Range of storage temperature C 1 Pwx10ys Duty cycle lt 1 2 Each terminal mounted on a recommended land e Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth ch a 833 C W Each terminal mounted on a recommended land DEUM 1 5 2010 06 Rev B 2010 ROHM Co Ltd All rights reserved RUEO002N05 eElectrical characteristics Ta 25 C Parameter Gate source leakage Conditions des 0 A Vos 28V Vos 0V Drain source breakdown voltage Mess 0 x I Ip2z1mA Ves OV Zero gate voltage drain current does I1 OU A Vos 50V Ves O0V Gate threshold voltage Static drain source on state resistance Forward tr
3. O002N05 eMeasurement circuits y D U T Lo 1 Fig 1 1 Switching time measurement circuit eNotice Pulse width Fig 1 2 Switching waveforms This product might cause chip aging and breakdown under the large electrified environment Please consider to design ESD protection circuit www rohm com 2010 ROHM Co Ltd All rights reserved 5 5 Data Sheet 2010 06 Rev B Notice Notes No copying or reproduction of this document in part or in whole is permitted without the consent of ROHM Co Ltd The content specified herein is subject to change for improvement without notice The content specified herein is for the purpose of introducing ROHM s products hereinafter Products If you wish to use any such Product please be sure to refer to the specifications which can be obtained from ROHM upon request Examples of application circuits circuit constants and any other information contained herein illustrate the standard usage and operations of the Products The peripheral conditions must be taken into account when designing circuits for mass production Great care was taken in ensuring the accuracy of the information specified in this document However should you incur any damage arising from any inaccuracy or misprint of such information ROHM shall bear no responsibility for such damage The technical information specified herein is intended only to show the typical functions of and examples of appl
4. Ta 25 C 10 Ta 25 C 1 0 1 0 01 DRAIN CURRENT lA Fig 7 Static Drain Source On State Resistance vs Drain Current IV www rohm com 2010 ROHM Co Ltd All rights reserved STATIC DRAIN SOURCE ON STATE STATIC DRAIN SOURCE ON STATE DRAIN CURRENT A RESISTANCE Rog on Q RESISTANCE Ry amp on O 100 Ves 4 5V Pulsed Ta 125 C Ta 75 C Ta 25 C i Ta 25 C 1 0 1 0 01 DRAIN CURRENT ILA Fig 5 Static Drain Source On State Resistance vs Drain Current Il 100 Ves 1 5V boi Ta 125 C Ta 75 C Ta 25 C 10 Ta 25 C 1 0 1 0 01 DRAIN SOURCE VOLTAGE VoslV Fig 2 Typical Output Characteristics II DRAIN CURRENT lA Fig 8 Static Drain Source On S
5. ansfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Rise time Turn off delay time Fall time Pulsed Ves 03 10 V_ Vos 40V lo tmA pow d ae ESSO Io 200mA Ves 4 5V 7 24 I5 200mA Ves 2 5V Rosen 19 27 Q Ip2100mA Veg 1 8V 20 40 lp 40mA Vas 1 5V 24 72 o 20mA Vas 12V Ye 04 S ip 200mA Vos 10V Cs 25 pF Vos 10V Ow 6 Iaa Os 3 oF fmz Lt 4 ns io 100mA Vode 30V LATI o o x m acies twm 15 ns Ri 3000 uS T ss deo eBody diode characteristics Source Drain Ta 25 C Parameter Forward voltage Pulsed www rohm com Symbol Min Typ Max Unit Conditions ILL TI l 200mA Vas 0V 2 5 2010 ROHM Co Ltd All rights reserved Data Sheet 2010 06 Rev B RUEO002N05 eElectrical characteristic curves STATIC DRAIN SOURCE ON STATE STATIC DRAIN SOURCE ON STATE DRAIN CURRENT IA RESISTANCE Rogs on Q RESISTANCE Rgs on O 0 4 Ves 4 5V i EN gud ere ee Ta 25 C Nese 18V Pulsed Vos71 5V 0 2 0 1 0 0 0 2 0 6 0 8 DRAIN SOURCE VOLTAGE Vpg V Fig 1 Typical Output Characteristics ids Ta 25 C a Pulsed Th V as 1 5V V as 1 8V 10 Vae 25V V as 4 5V 1 0 1 0 01 DRAIN CURRENT ID A Fig 4 Static Drain Source On State Resistance vs Drain Current 100 V aa 1 8V Pulsed Lage Ta 75 C
6. h as a medical instrument transportation equipment aerospace machinery nuclear reactor controller fuel controller or other safety device ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes If a Product is intended to be used for any such special purpose please contact a ROHM sales representative before purchasing If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law you will be required to obtain a license or permit under the Law Thank you for your accessing to ROHM product informations More detail product informations and catalogs are available please contact us ROHM ROHM Customer Support System SEMICONDUCTOR http www rohm com contact www rohm com 2010 ROHM Co Ltd All rights reserved R1010A
7. ication circuits for the Products ROHM does not grant you explicitly or implicitly any license to use or exercise intellectual property or other rights held by ROHM and other parties ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information The Products specified in this document are intended to be used with general use electronic equipment or devices such as audio visual equipment office automation equipment commu nication devices electronic appliances and amusement devices The Products specified in this document are not designed to be radiation tolerant While ROHM always makes efforts to enhance the quality and reliability of its Products a Product may fail or malfunction for a variety of reasons Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury fire or any other damage caused in the event of the failure of any Product such as derating redundancy fire control and fail safe designs ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual The Products are not designed or manufactured to be used with any equipment device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury suc
8. tate Resistance vs Drain Current V 3 5 STATIC DRAIN SOURCE ON STATE DRAIN CURRENT A STATIC DRAIN SOURCE ON STATE RESISTANCE Ryg on Q 0 1 0 01 0 001 Vase 10V Data Sheet Pulsed Ta 125 C Ta 75 C Ta 25 C Ta 25 C 0 5 1 5 GATE SOURCE VOLTAGE Ves V Fig 3 Typical Transfer Characteristics Ta 125 C Ta 75 C Ta 25 C Ta 25 C 0 01 100 RESISTANCE RDS on Q DRAIN CURRENT Ip A Fig 6 Static Drain Source On State Resistance vs Drain Current ll 0 01 Ta 125 C Ta 75 C Ta 25 C Ta 25 C DRAIN CURRENT Ip A Fig 9 Static Drain Source On State Resistance vs Drain Current VI 2010 06 Rev B RUEO002N05 7 D Z Vps 10V LU O Pulsed A E Ta 25 C Ta 25 C lt Ta 75 C c Ta 125 C LU LL 75 Z x c ke Q c S a 0 1 Q 0 001 0 01 DRAIN CURRENT Ip A Fig 10 Forward Transfer Admittance vs Drain Current 1000
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ROHM RUE002N05 Manual