ROHM RZQ050P01 handbook
Contents
1. 0 1 1 DRAIN CURRENT lp A 10 Fig 4 Static Drain Source On State Resistance vs Drain Current I Ves 1 BV Pulsed Ta 125 C Ta 75 C Ta 25 C Ta 25 C 0 1 1 DRAIN CURRENT Ip A 10 Fig 7 Static Drain Source On State Resistance vs Drain Current IV www rohm com 2009 ROHM Co Ltd All rights reserved STATIC DRAIN SOURCE ON STATE STATIC DRAIN SOURCE ON STATE 10 8 T D D Z LLI nA C 4 O z T 2 Q 0 1000 amp E Z 6 100 c LLI O A 7 10 N LLI cc 4 1000 a E 5 100 K c LLI O Z 10 e o N LLI cc 1 0 2 4 6 8 10 DRAIN SOURCE VOLTAGE Vps V Fig 2 Typical Output Characteristics II Vasa 4 5V I Pulsed Ta 129 C Ta 75 C Ta 25 C Ta 25 C 0 1 1 10 DRAIN CURRENT Ip A Fig 5 Static Drain Source On State Resistance vs Drain Current II Ta 125 C Ta 75 C Ta 25 C 0 1 1 10 DRAIN CURRENT Ip A Fig 8 Static Drain Source On State Resistance vs Drain Current Y 3 5 STATIC DRAIN SOURCE2. Ip 2 5A Ves 1 8V 44 88 mQ Ip 1A Ves 1 5V Forward transfer admittance S Vos 6V Ip 5A Input capacitance 2850 ET pF Vps 6V Output capacitance Ge 950 pF Vas 0V Reverse transfer capacitance Ge 1959 pF f 1MHz Turn on delay time La iant 12 ns lp 2 5A Rise time K 100 ns T pi Turn off delay time teen 420 ns A Fall time pot 225 ns Re 100 Total gate charge zeae SENT nC Vppz 6V RL 1 20 Static drain source on state resistance Gate source charge Qs esk nC Vaes 4 5V Ra 10 Gate drain charge Os 55 nC l 5A Pulsed eBody diode characteristics Source drain Ta 25 C Parameter Conditions E Veo 12 v EA Vas V Pulsed www rohm com 2009 ROHM Co Ltd All rights reserved 2 5 2009 01 Rev A RZQ050P01 Electrical characteristic curves STATIC DRAIN SOURCE ON STATE STATIC DRAIN SOURCE ON STATE 10 8 x Oo 6 Z LU fr gt 4 O z 2 a 0 1000 ex E z o o R2 100 LU O A e o 10 R LU c 1 1000 ex E a lt 100 S LU O A 10 o R LU c 1 Vcs 4 5V Vasz 2 5V 1 Vcs 1 8V Vcs 1 5V Ves 0 0 2 0 4 0 6 0 8 DRAIN SOURCE VOLTAGE Vps V Fig 1 Typical Output Characteristics I Vos 1 5V Ves 1 8V Vos 2 5V Vog 4 5V
3. ON STATE Data Sheet lt x 1 Ta 125 C Ta 75 C z Ta 25 C y 01 Ta 25 C DC 2 O z 0 01 SS O 0 001 0 0 5 1 1 5 GATE SOURCE VOLTAGE Ves V Fig 3 Typical Transfer Characteristics 1000 Ta 125 C Z Ta 75 C F Ta 25 C 9 100 Ta 25 C na Lu O 7 10 0 LL DC 1 0 1 1 10 DRAIN CURRENT Ip A Fig 6 Static Drain Source On State Resistance vs Drain Current II 10 x Ves 0V Pulsed Ta 125 C U 14 ETa 750 S Ta 25 C O Ta 25 C Z Z G 0 1 LLI 0 DC LLI gt UU X 0 01 0 02 04 06 0 8 1 1 2 SOURCE DRAIN VOLTAGE Vsp V Fig 9 Reverse Drain Current vs Sourse Drain Voltage 2009 01 Rev A RZQ050P01 x 150 E E a E 125 O Z uo O A 100 X a DO 75 S E b ps o 50 Q fj lt 3 25 ke 0 0 0 2 4 6 8 10 GATE SOURCE VOLTAGE Ves V Fig 10 Static Drain Source On State Resistance vs Gate Source Voltage 10000 i Ciss LL O LLI z c os
4. Poja liN Data Sheet SEMICONDUCTOR 1 5V Drive Pch MOSFET RZQ050P01 eStructure eDimensions Unit mm Silicon P channel MOSFET eFeatures 1 Low on resistance 2 High power package 3 Low voltage drive 1 5V 1pin mark Each lead has same dimensions Abbreviated symbol YF Applications Switching Packaging specifications eEquivalent circuit Package Taping Type Code TR Basic ordering unit pieces 3000 RZQ050P01 1 ESD PROTECTION DIODE 2 BODY DIODE eAbsolute maximum ratings Ta 25 C Parameter Unit Drain source voltage Gate source voltage Vass 10 Pulsed lpp 20 Source current eae Total power dissipation Channel temperature Tch Range of Storage temperature 55 to 150 x1 Pw lt 10us Duty cycles1 2 When mounted on a ceramic board OO 5 E eThermal resistance Parameter Symbol Unit Channel to ambient Rth ch a C W When mounted on a ceramic board www rohm com 2009 ROHM Co Ltd All rights reserved 1 5 2009 01 Rev A RZQO50P01 Data Sheet Electrical characteristics Ta 25 C Parameter Conditions Gate source leakage less HO pA Ves 10V Vos 0V Drain source breakdown voltage ka 12 4 lp 1mA Vas 0V Zero gate voltage drain current Ipss 1 LA Vos 12V Vas 0V Gate threshold voltage Vesty 0 3 10 v Vps 6V Ip 1mA m lp 5A Vas 4 5V mQ In 2 5A Ves 2 5V m
5. er the large electrified environment Please consider to design ESD protection circuit www rohm com 2009 ROHM Co Ltd All rights reserved 5 5 Data Sheet 2009 01 Rev A Appendix Notes No copying or reproduction of this document in part or in whole is permitted without the consent of ROHM CO LTD The content specified herein is subject to change for improvement without notice The content specified herein is for the purpose of introducing ROHM s products hereinafter Products If you wish to use any such Product please be sure to refer to the specifications which can be obtained from ROHM upon request Examples of application circuits circuit constants and any other information contained herein illustrate the standard usage and operations of the Products The peripheral conditions must be taken into account when designing circuits for mass production Great care was taken in ensuring the accuracy of the information specified in this document However should you incur any damage arising from any inaccuracy or misprint of such information ROHM shall bear no re sponsibility for such damage The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products ROHM does not grant you explicitly or implicitly any license to use or exercise intellectual property or other rights held by ROHM and other parties ROHM shall bear no re spo
6. nsibility whatsoever for any dispute arising from the use of such technical information The Products specified in this document are intended to be used with general use electronic equipment or devices such as audio visual equipment office automation equipment communication devices elec tronic appliances and amusement devices The Products are not designed to be radiation tolerant While ROHM always makes efforts to enhance the quality and reliability of its Products a Product may fail or malfunction for a variety of reasons Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury fire or any other damage caused in the event of the failure of any Product such as derating redundancy fire control and fail safe designs ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual The Products are not designed or manufactured to be used with any equipment device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury such as a medical instrument transportation equipment aerospace machinery nuclear reactor controller fuel controller or other safety device ROHM shall bear no responsibility in any way for use of any of the Products for the above special
7. purposes If a Product is intend ed to be used for any such special purpose please contact a ROHM sales representative before purchasing If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law you will be required to obtain a license or permit under the Law Thank you for your accessing to ROHM product informations More detail product informations and catalogs are available please contact your nearest sales office ROHM Customer Support oystem THE AMERICAS EUROPE ASIA JAPAN WWW roh m com Contact us webmaster rohm co jp Copyright 2009 ROHM Co Ltd ROHM Co Ltd 21 Sain Mizosaki cho Ukyo ku Kyoto 615 8585 Japan TED 81 79 ST T2121 FAX 81 75 315 0172 Appendix Rev4 0 ROHM SEMICONDUCTOR
8. s lt 1000 O Crss E D 3 Ta 25 C f 1MHz Ves 0V 100 0 01 0 1 1 10 100 DRAIN SOURCE VOLTAGE Vps V Fig 13 Typical Capacitance vs Drain Source Voltage www rohm com 2009 ROHM Co Ltd All rights reserved FORWARD TRANSFER ADMITTANCE Yfs S 100000 SWITCHING TIME t ns 10000 1000 100 10 Ta 125 C Ta 75 C Ta 25 C Ta 25 C 0 1 1 10 DRAIN CURRENT Ip A Fig 11 Forward Transfer Admittance vs Drain Current Ta 25 C Vpp 6 0V tf Ves 4 5V icc off Re 100 kado Pulsed ir td on 0 01 0 1 1 10 DRAIN CURRENT Ip A Fig 14 Switching Characteristics 4 5 GATE SOURCE VOLTAGE Ves V Data Sheet 0 5 10 15 20 25 30 35 TOTAL GATE CHARGE Qg nC Fig 12 Dynamic Input Characteristics 2009 01 Rev A RZQ050P01 Measurement circuits Vas p D U T Ra Fig 15 Switching Time Measurement Circuit Vps VDD Fig 17 Gate Charge Measurement Circuit Notice Pulse Width ton toff Fig 16 Switching Waveforms Va Charge Fig 18 Gate Charge Waveform This product might cause chip aging and breakdown und
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ROHM RZQ050P01 handbook