ROHM US5U3 Manual
Contents
1. DRAI Fig 9 Static Drai On State N CURRENT Ip A n Source Resistance vs Drain Current III Rev B 3 3 Appendix Notes Notechnical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO LTD The contents described herein are subject to change without notice The specifications for the product described in this document are for reference only Upon actual use therefore please request that specifications to be separately delivered Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set Any data including but not limited to application circuit diagrams information described herein are intended only as illustrations of such devices and not as the specifications for such devices ROHM CO LTD disclaims any warranty that any use of such devices shall be free from infringement of any third party s intellectual property rights or other proprietary rights and further assumes no liability of whatsoever nature in the event of any such infringement or arising from or connected with or related to the use of such devices Upon the sale of any such devices other than for buyer s right to use2. C Vop 15V Vas 4 5V Re 100 Pulsed tf 100 td off 10 td on tr 1 0 01 0 1 1 10 DRAIN CURRENT Ip A Fig 2 Switching Characteristics 10 Ta 25 C e 09 Pulsed 8 08 Ip 1 5A c IT 07 QS 06 ac Qo os 17 Zu lt tr 1520 75A or 03 o o 02 Ez nO 01 0 0 12 3 45 6 7 8 9 GATE SOURCE VOLTAGE Vas V Fig 5 Static Drain Source ON STATE RESISTANCE Ros on Q STATIC DRAIN SOURCE 10 On State Resistance vs Gate source Voltage Vas 4 0V Pulsed 1 Ta 125 C 75 C 25 C 25 C A 0 01 0 1 0 DRAIN CURRENT Ip A Fig 8 Static Drain Source On State Resistance vs Drain Current II Ta 25 C Vop 15V lp 1 5A Re 100 Pulsed US5U3 GATE SOURCE VOLTAGE Ves V 5 1 TOTA 1 5 L GATE CHARGE Qg nC Fig 3 Dynamic Input Characteristics Vas 0V Pulsed lt m xm 1 Ta 125 C E 75 C3 a 25 CJ oc 25c1 2 o W O 01 a 2 o 7 0 01 0 0 0 5 1 0 1 5 SOURCE DRAIN VOLTAGE Vsp V Fig 6 Source Current vs Source Drain Voltage ON STATE RESISTANCE Ros on Q STATIC DRAIN SOURCE
3. Transistors lt MOSFET and Di gt Parameter Symbol Pp 1 1 0 Total power dissipation W TOTAL Range of storage temperature Tstg 55 to 150 C 1 Mounted on a ceramic board eElectrical characteristics Ta 25 C lt MOSFET gt Parameter Symbol Min Typ Max Unit Conditions Gate source leakage lass _ _ 10 uA Ves 12V Vps 0V Drain source breakdown voltage VBR pss 30 V Ib 1mA Ves 0V Zero gate voltage drain current Ipss 1 uA Vos 30V Vas 0V Gate threshold voltage Vas th 0 5 _ 1 5 V Vos 10V lp 1mA _ 170 240 mQ Ip 1 5A Vos 4 5V Static draln source on state R s s 180 250 mo 1 5A Ves 4V 240 340 mQ Ip 1 5A Vas 2 5V Forward transfer admittance Yis 1 5 S Vps 10V Ip 1 5A Input capacitance Ciss 80 pF Vos 10V Output capacitance Coss _ 14 _ pF Vas 0V Reverse transfer capacitance Crss _ 12 _ pF f 1MHz Turn on delay time lady 7 _ ns Vop 15V Rise time t 9 ns l 0 75A 7 Vos 4 5V Turn off delay time lar 15 ns R ooo Fall time th 6 _ ns Ra 10Q Total gate charge Q 1 6 2 2 nC Vop 15V Ves 4 5V Gate source charge Qs 0 5 _ nC lIp21 5A Gate drain charge Qga 0 3 nC Ric 10Q Re 100 Pulsed Body diode characteristics Souce drain gt Parameter Forward voltage _ Vso 12 V Is 096A Ves 0V
4. Conditions lt Di gt Parameter Conditions Forward voltage Reverse current IR Rev B US5U3 2 3 Transistors CAPACITANCE C pF eElectrical characteristics curves 1 STATIC DRAIN SOURCE 000 Ta 25 C f 1MHz Vas 0V E Ciss pa 100 LL Crss m E Coss e z 10 E N 1 0 01 0 1 1 10 100 DRAIN SOURCE VOLTAGE Vos V Fig 1 Typical Capacitance vs Drain Source Voltage 10 Vps 10V Pulsed lt 1 Ta 125 C lt T 0 1 T o x o z amp oo a 0 001 ON STATE RESISTANCE Ros on Q 0 0 0 5 1 0 1 5 2 0 2 5 GATE SOURCE VOLTAGE Vas V Fig 4 Typical Transfer Characteristics 0 1 DRAI Fig 7 Static Drai 1 0 N CURRENT Ip A in Source On State Resistance vs Drain Current 1 1000 Ta 25
5. Transistors 2 5V Drive Nch SBD MOSFET US5U3 eStructure Silicon N channel MOSFET Schottky barrier diode Features 1 Nch MOSFET and schottky barrier diode are put in TUMT5 package 2 High speed switching Low On resistance 3 Low voltage drive 2 5V drive 4 Built in Low Vr schottky barrier diode eApplications Switching e Package specifications Package Taping Type Code TR Basic ordering unit pieces 3000 US5U3 O eAbsolute maximum ratings Ta 25 C lt MOSFET gt eDimensions Unit mm Abbreviated symbol U03 einner circuit 1 Gate 2 Source 3 Anode 4 Cathode 5 Drain 1 ESD protection diode 2 Body diode Parameter Symbol Limits Unit Drain source voltage Voss 30 V Gate source voltage Voss 12 V Drain currant Continuous Ip 415 A Pulsed lop 4 6 0 A Source current Continuous ls 0 6 A Body diode Pulsed Isp 1 6 0 A Power dissipation Pp 2 0 7 W ELEMENT Channel temperature Tch 150 C 1 Pws10us Duty cycles1 2 Mounted on a ceramic board Di Parameter Symbol Limits Unit Repetitive peak reverse voltage VRM 25 V Reverse voltage VR 20 V Forward current IF 0 7 A Forward current surge peak lrsm 1 3 0 A Power dissipation Pp 2 0 5 W ELEMENT Junction temperature Tj 150 C 1 60Hz 1cycle 2 Mounted on ceramic board Rev B US5U3 1 3
6. such devices itself resell or otherwise dispose of the same no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO LTD is granted to any such buyer Products listed in this document are no antiradiation design The products listed in this document are designed to be used with ordinary electronic equipment or devices such as audio visual equipment office automation equipment communications devices electrical appliances and electronic toys Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life such as medical instruments transportation equipment aerospace machinery nuclear reactor controllers fuel controllers and other safety devices please be sure to consult with our sales representative in advance About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 Item 16 of Export Trade Control Order in Japan In case of export from Japan please confirm if it applies to objective criteria or an informed by MITI clause on the basis of catch all controls for Non Proliferation of Weapons of Mass Destruction Appendix1 Rev1 1
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ROHM US5U3 Manual