FUJI 2SK1101-01MP handbook
Contents
1. O A WERS2. GR C P RI P A de A EUR 7 80 0O ES HIRE ar
3. 1 03 5388 7657 06 455 6467 151 30 3 Tt 03 5388 7681 Tt 0764 41 1231 M ue 5 T 03 5388 7680 0878 51 0185 ft 23 5388 7651 c 0263 36 6740 052 204 0295 Tt 03 5388 7685 092 731 7132
4. 5 UNE FE CR EI REN ET ERE ERST EET EE ERIS mme Es ee lr jo9 LE A D 0 5 Tt nM RES 0 05 L 3 34 3 s E 5 TECE e RE A A Vs 15 Forward Characteristics of Reverse Diode tT TT LT FT LL eT Transient Thermal Impedance 2SK 1101 01MR Typical Input Charge 60 Safe Operating Area TEE A2 150
5. FUJI POWER MOS FET amp 1101 01MR WCHANNEL SILICON POWER MOS FET F II S ERI ES Features E Outline Drawings e High speed switching l ow on resistance o secondary breakdown e driving power e liigh voltage Guarantee valanche proof a3 E Applications E e Switching regulators Ts e PS e DC converters eneral purpose power amplifier Ratings and Characteristics W Equivalent Circuit Schematic bsolute Maximum Ratings Tcz25 C __ Items Units _ Drain source voltage V vss continuous drain current Ip Drain D Pulsed drain current lepus continuous reverse drain current Ion aate source peak voltage V ass m ETC pr p T r Gate G Max power dissipation Pb J 50 j Operating and storage 1 ch Source S temperature range Tsu Drain source breakdown voltage Gate threshold voltage V 55 Ip lmA Vos 0V Vesan lb lmA Zero gate voltage drain current Vps 450V Ta 25C NM Ves 0V Ten 125 C mA __ Gate source leakage current loss Ves 2 X30V Vps 0V LLL nA Drain source on state resistance Rpso lp 5A Vcs 10V Q Forward transconductance gs jp 5A Vps 25V 5 Input capacitance Cis Vos 25V Output capacitance Coss Ves 0V pF _ Reverse transfer capa
6. citance Crs f 1MHz taoi O S 300 bp 10A Ves 10V ns Turn off time torr taos R 250 ttr i t dh Diode forward on voltage Va 2xIps Ves 0V 25 C Vo __ _ Reverse recovery time Ir7Ip amp di d100A ugs 25 hermal Characteristics Rinten a Thermal Kesistance Rinten c channel to case 2SK 1101 01MR FUJI POWER MOS FET Characteristics Ro e zm ov LED SEEDS OV M MAS gt a TH HH LE 2 z Rosiow TERR ET os e EET E f ELLLLLTT r ri sr b50 0 50 100 150 Vos V Ta t6 Typical Output Characteristics On State Resistance vs Rosow Vos V Typical Transfer Characteristics 0 p ILE Lu TEM ESN NNT RR OU HERE Vm EE vo lll tilii EET SO 10C Gate Threshold Voltage vs Ten Typical Forward Transconductance vs lp A2 149 FUJI POWER MOS FET BET OO A LLL A LED E AEE LIH E LIII Y HE LLLI N E LM us LAN LX EE E Vos V 3 ELE E ai 4 P L
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