ROHM TT8M11 handbook
Contents
1. F o E S 1 D eo o a T E 2 0 1 E ER o eo k g F oo A 5 Mounted on a ceramic board N 30mm x 30mm x 0 8mm E Rth cn qj 125 C W S Rthch a t r t X Rthych a 0 001 0 0001 0 001 0 01 0 1 1 10 100 Pulse width Pw s www rohm com 2011 ROHM Co Ltd All rights reserved 1000 Fig 14 Maximum Safe Operating Area Data Sheet 100 Operation in this area is limited by Rps on Vas 10V 10 Py 100us a T 1 Py 1ms 5 o E Py 10ms g a 01 0 Single Pulse 1Unit Mounted on a ceramic board DC Operation 30mm x 30mm x 0 8mm 0 01 0 1 1 10 100 Drain Source Voltage Vps V 9 10 2011 09 Rev A TT8M11 Measurement circuits Tr1 Nch Vas D m O Vos RL k D U T Re Voo 77 7 7 7T Fig 1 1 Switching Time Measurement Circuit Vos lG Const gt D 777 Fig 2 1 Gate Charge Measurement Circuit lt Tr2 Pch gt Vas Fig 1 1 Switching Time Measurement Circuit Vas RL la const I D U T VoD D 7T 7T Fig 2 1 Gate Charge Measurement Circuit Notice Pulse width ta on ton t2. Forward Voltage Pulsed www rohm com 2011 ROHM Co Ltd All rights reserved rr j Conditions 1 2 5A Veg 0V 3 10 Data Sheet 2011 09 Rev A TT8M11 eElectrical characteristic curves Ta 25 C Tr 1 Nch Fig 1 Typical Output Characteristics I Drain Current lp A Drain Source Voltage Vps V Fig 3 Static Drain Source On State Resistance vs Drain Current Static Drain Source On State Resistance Drain Current Ip A Fig 5 Static Drain Source On State Resistance vs Drain Current 1000 Vas 4 5V pulsed w g T 125 C 3 T 75 C 2 T 25 C T 25 C a N O z 100 ac 9 E T a 9 8 a 10 0 01 0 1 1 10 Drain Current Ip A www rohm com 2011 ROHM Co Ltd All rights reserved 4 10 Data Sheet Fig 2 Typical Output Characteristics I z g 5 o c g a Drain Source Voltage Vps V Fig 4 Stati
3. 0 0 2 0 4 0 6 0 8 DRAIN SOURCE VOLTAGE Vps V Fig 3 Typical Transfer Characteristics 10 Vog 10V Pulsed z 1 Ta 125 C Y Ta 75 C E Ta 25 C ul 0 1 Ta 25 C g 2 o z lt a 2 0 01 0 001 0 2 3 GATE SOURCE VOLTAGE Vag V Fig 5 Static Drain Source On State Resistance vs 1000 w Ta 125 C lt _ Ta 75 C e Ta 25 C v E 2 Ta 25 C uo O6 Co O y 100 6 lt Bo on ET E 7 10 DRAIN CURRENT 1 A www rohm com 2011 ROHM Co Ltd All rights reserved 10 DRAIN CURRENT Ip A Fig 2 Typical Output Characteristics II Data Sheet 4 6 DRAIN SOURCE VOLTAGE Vps V 8 10 Fig 4 Static Drain Source On State Resistance vs Drain Current I 1000 Ta 25 C Pulsed V V V as 4 0V as 4 5V as 10V Lu R g wn 25 Oz wO O76 Co B nw 22 100 4 amp in of eo lt R n 10 0 1 1 DRAIN CURRENT 1 A 10 Fig 6 Static Drain Source On State Resistance vs Drain Current II 1000 Veg 4 5V Pulsed 100 RESISTANCE Rps ON mQ STATIC DRAIN SOURCE ON STATE 10 0 1 7 0 1 Ta 125 C Ta 75 C
4. Pw 100us o 2 8 100 Ci 1 8 g Py ims S 1 T c Pw 10ms 2 g a o4 Coss T 25 C Single Pulse 1Unit C Mounted on a ceramic board DC Operation ini 30mm x 30mm x 0 8mm 10 0 01 0 01 0 1 1 10 00 0 1 1 10 100 Drain Source Voltage Vps V Drain Source Voltage Vos V Fig 15 Normalized Transient Thermal Resistance v s Pulse Width 10 a T 25 C Single Pulse 1Uni o o c g 1 E i o o u o F 0 1 Sr o o Lo g 8 on Mounted on a ceramic board E 30mm x 30mm x 0 8mm 3 Rth 4 42125 C W Rthchay t r t X Rthen a 0 001 0 0001 0 001 0 01 0 1 1 10 100 1000 Pulse width Pw s www rohm com 2011 ROHM Co Ltd All rights reserved 6 10 2011 09 Rev A Drain Current I Tr 2 Pch Fig 1 Typical Output Characteristics I 10 Ta 25 C Pulsed 8 1 Vas 10V z Ve 6 0v D T Vas 4 5V gt e 06 Vag 4 as 4 0V z W rs a 3 4 g lt Vas 3 4V a 2 Vas 3 0V 0
5. Ta 25 C Ta 25 C DRAIN CURRENT Ip A 10 2011 09 Rev A TT8M11 Fig 7 Static Drain Source On State Resistance vs Drain Current IV 1000 Vas 4 0V Pulsed lt pa 25 Oz ug Sa Q w 100 29 lt lt 4 es 5 2 Ta 125 C 7 2 u Ta 75 C lt Ta 25 C 7 7 Ta 25 C 10 0 1 1 10 DRAIN CURRENT 1 A Fig 9 Reverse Drain Current vs Sourse Drain Voltage 10 Ves 0V Pulsed T T T T 2 Ta 125 C e Ta 75 C 5 1 Ta 25 C T Ta 25 C rs 2 o z a w 0 1 7 s LL 2 LL 0 01 0 0 5 1 1 5 SOURCE DRAIN VOLTAGE Vsp V Fig 11 Switching Characteristics 1000 a Ta 25 C H Vop 15V off Ves 10V H m Rg 100 t Pulsed 100 H W F g Er o E 10 a on t on 1 0 01 0 1 1 0 DRAIN CURRENT 1 A www rohm com 2011 ROHM Co Ltd All rights reserved Data Sheet Fig 8 Forward Transfer Admittance vs Drain Cur
6. ROHM Data Sheet SEMICONDUCTOR 4V Drive Nch Pch MOSFET TT8M11 e Structure eDimensions Unit mm Silicon N channel MOSFET Silicon P channel MOSFET 98 eFeatures 1 Low on resistance 2 Low voltage drive 4V drive 0 O G w 3 Small surface mount package TSST8 oss ose ovil Abbreviated symbol M11 e Application Switching e Packaging specifications Inner circuit Package Code Basic ordering unit pieces TT8M11 1 Tr1 Source 2 Tr1 Gate 3 Tr2 Source 4 Tr2 Gate 5 Tr2 Drain 6 Tr2 Drain 3 a 7 Tr1 Drain 8 Tr1 Drain 1 ESD PROTECTION DIODE 2 BODY DIODE Absolute maximum ratings Ta 25 C Limits Parameter Symbol Limits Unit y Tr1 N ch Tr2 P ch Drain scurce voltage V Gate source voltage V i SR Continuous o 23 25 A A Source curent Continuous is 08 os Body Diode A M 125 W TOTAL Power dissipation Pp 1 0 W ELEMENT Channel temperature C Range of storage temperature 55 to 150 C 1 Pw lt 10ps Duty cycle lt 1 2 Mounted on a ceramic board www rohm com 2011 ROHM Co Ltd All rights reserved 1 10 2011 09 Rev A TT8M11 Electrical characteristics Ta 25 C lt Tr1 Nch gt Parameter Conditions Gate source leakage des 210 pA Ves t20V Vps 0V Drain source breakdown voltage Veros 30 J V Ip 1mA Ves 0V Zer
7. an life or create a risk of human injury such as a medical instrument transportation equipment aerospace machinery nuclear reactor controller fuel controller or other safety device ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes If a Product is intended to be used for any such special purpose please contact a ROHM sales representative before purchasing If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law you will be required to obtain a license or permit under the Law Thank you for your accessing to ROHM product informations More detail product informations and catalogs are available please contact us ROHM ROHM Customer Support System SEMICONDUCTOR http www rohm com contact www rohm com 2011 ROHM Co Ltd All rights reserved R1120A
8. c Drain Source On State Resistance vs Drain Current 1000 Vas 10V pulsed o 2 S T 125 C 2 T 75 C x T 25 C 2 Ta 25 C ag 6 o 5 100 2e 8 aa a c g 2 S a 10 0 01 0 1 1 10 Drain Current Ip A Fig 6 Static Drain Source On State Resistance vs Drain Current 1000 o o ist k eo o a o S 100 Q ea a a c S a g S a 10 0 01 0 1 1 10 Drain Current Ip A 2011 09 Rev A TT8M11 Fig 7 Forward Transfer Admittance vs Drain Curren 100 Vps 10V pulsed 10 o o x E Ki T 50 1 O s T 125 C T 75 C 8 T 25 C T 25 C o i 0 01 0 001 0 01 0 1 1 10 Drain Current Ip A Fig 9 Source Current vs Source Drain Voltage 10 Vas 0V pulsed T 125 C T 75 C 1 T 25 C lt T 25 C B j 2 5 o o B 5 0 1 o 5 0 01 0 0 0 5 1 0 1 5 Source Drain Voltage Vsp V Fig 11 Switching Characteristics 1000 Vop 15V Ves 4 5V Rg 100 T 25 C Pulsed 100 Tat
9. he typical functions of and examples of application circuits for the Products ROHM does not grant you explicitly or implicitly any license to use or exercise intellectual property or other rights held by ROHM and other parties ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information The Products specified in this document are intended to be used with general use electronic equipment or devices such as audio visual equipment office automation equipment commu nication devices electronic appliances and amusement devices The Products specified in this document are not designed to be radiation tolerant While ROHM always makes efforts to enhance the quality and reliability of its Products a Product may fail or malfunction for a variety of reasons Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury fire or any other damage caused in the event of the failure of any Product such as derating redundancy fire control and fail safe designs ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual The Products are not designed or manufactured to be used with any equipment device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to hum
10. o gate voltage drain current Laws J ee 1 a Vos 30V Ves 0V Gate threshold voltage Yem 10 Lo 25 V Vps 10V lp21mA rn s on state R san P 6 mQ ip 3A Ves 4 5V Forward transfer admittance ys 27 p qox S Vps710V Ip 3A Input capacitance Cse o pF Vps 10V Output capacitance Cos 55 pF Ves 0V Reverse transfer capacitance LX px 2 pF f 1MHz Turn on delay time t 5 ns Vpn 15V Ip 1 5A Turn off delay time tant 20 ns R 2100 Total gate charge atl 25 Vop 10V Ip 3A Gate source charge Ee 08 TERES Ves 5V Pulsed Body diode characteristics Source Drain Conditions v 1 12 sv Parameter Forward Voltage Pulsed www rohm com 2011 ROHM Co Ltd All rights reserved 2 10 Data Sheet 2011 09 Rev A TT8M11 Electrical characteristics Ta 25 C lt Tr2 Pch gt Parameter Gate source leakage Conditions F less slo m o vos ov Drain source breakdown voltage ee 30 V Ip 1mA Ves 0V Zero gate voltage drain current Gate threshold voltage Static drain source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Rise time Turn off delay time Fall time Total gate charge Gate source charge Gate drain charge Pulsed r eBody diode characteristics Source Drain Parameter
11. ort o S m 10 talon Fi a 1 0 01 0 1 1 10 www rohm com Drain Current A 2011 ROHM Co Ltd All rights reserved 5 10 lo A Drain Currnt Static Drain Source On State Resistance Gate Source Voltage Vas V Ros on mQ 10 0 1 0 01 0 001 Fig 8 Typical Transfer Characteris Data Sheet ics Vps 10V pulsed T 125 C T 75 C T 25 C L T 25 C 4 0 0 0 5 1 0 15 2 0 2 5 Gate Source Voltage Veg V 3 0 3 5 Fig 10 Static Drain Source On State Resistance vs Gate Source Voltage 150 100 50 Gate Source Voltage Vas V Fig 12 Dynamic Input Characteristics Total Gate Charge Q nC 2011 09 Rev A TT8M11 Data Sheet Fig 13 Typical Capacitance vs Drain Source Voltage Fig 14 Maximum Safe Operating Area 1000 100 ji ji CE T 25 C Operation in this area is limited by Ros on 1MHz Va 10V on Vas 0V 10 ic
12. ott Fig 1 2 Switching Waveforms Va Qg Charge Fig 2 2 Gate Charge Waveform Pulse width ton loft Fig 1 2 Switching Waveforms Charge Fig 2 2 Gate Charge Waveform This product might cause chip aging and breakdown under the large electrified environment Please consider to design ESD protection circuit www rohm com 2011 ROHM Co Ltd All rights reserved 10 10 Data Sheet 2011 09 Rev A Notice Notes No copying or reproduction of this document in part or in whole is permitted without the consent of ROHM Co Ltd The content specified herein is subject to change for improvement without notice The content specified herein is for the purpose of introducing ROHM s products hereinafter Products If you wish to use any such Product please be sure to refer to the specifications which can be obtained from ROHM upon request Examples of application circuits circuit constants and any other information contained herein illustrate the standard usage and operations of the Products The peripheral conditions must be taken into account when designing circuits for mass production Great care was taken in ensuring the accuracy of the information specified in this document However should you incur any damage arising from any inaccuracy or misprint of such information ROHM shall bear no responsibility for such damage The technical information specified herein is intended only to show t
13. ren 10 2 Vog 10V e Pulsed m o Z lt Q lt K 1 ul LL e E NNT Ta 125 C Es NIN Ta 75 C R Ta 25 C lt x Ta 25 C tc O LL 0 1 0 01 0 1 10 DRAIN CURRENT 1 A Fig 10 Static Drain Source On State Resistance vs Gate Source Voltage 500 Ta 25 C l Pulsed t 400 52 z s 5 300 i 5 ac a 29 ZZ 200 55 of er amp 100 o 0 0 5 10 15 GATE SOURCE VOLTAGE Ves V Fig 12 Dynamic Input Characteristics 10 z 8 3 7 5 6 lt H o gt ut 4 5 o Ta 25 C i Vpp 15V E 2 Ip 2 5A fo Rg 100 Pulsed 0 0 2 4 6 8 10 8 10 TOTAL GATE CHARGE Qg nC 2011 09 Rev A TT8M11 se Width Fig 13 Typical Capacitance vs Drain Source Voltage 10000 Ta 25 C f 1MHz Ves 0V E o 1000 Ciss w o z E E Q lt lt amp 100 Crss Coss 10 0 01 0 1 10 100 DRAIN SOURCE VOLTAGE Vpg V Fig 15 Normalized Transient Thermal Resistance v s Pu 10 r t T 25 C Single Pulse 1Uni
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ROHM TT8M11 handbook