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ROHM QSH29 Manual

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1. Vce 2V 500 25C Tie 600u baie CE e a B u S 500UA VcE 5V 125 C E 2 25C 400 gm 40 C 2 EPONA E 1000 mH 2 30 z z W Zz lt E g 300 B 300uUA 5 C 100 25 C 2 3 8 200uA a 25 C g 200 ra E 0 0 e 23 O o o wW j m o 10 Q a100 100uA E o B 100u o 0 00 0 1 0 1 1 10 0 1 2 3 4 5 6 7 8 9 10 0 001 0 01 0 1 1 BASE TO EMITTER VOLTAGE Ve V COLLECTOR TO EMITTER VOLTAGE Vct V COLLECTOR CURRENT lc A Fig 1 Grounded Emitter Propagation Fig 2 Typical Output Characteristics Fig 3 DC Current Gain vs Characteristics Collector Current 10 10 ui 10 Ta 25 C w 1c Ib 100 1 O c Ib 10 1 ul o x 9 x z 3 E S A Z z 1 Ic Ib 200 1 1 9 40 C oc ES Qs Ic lb 150 1 Ez to 25 C gS Ic Ib 100 1 tz Ce 125 C cs 5 2 ee 1 gt E ou p lt gt ol lt gt 7 cm 2 04 c 0 1 ui 5 hr ul iu 3 5 3 oo 9 oo SG o 0 01 0 1 1 0 01 0 1 1 0 001 0 01 0 1 1 COLLECTOR CURRENT lc A COLLECTOR CURRENT lc A COLLECTOR CURRENT lc A Fig 4 Collector Emitter Saturation Fig 5 Collector Emitter Saturation Fig 6 Base emitter Saturation Voltage vs Collector Current 1 Voltage vs Collector Current II Voltage vs Collector Current 10 Ta 25 C zx Pulsed z 2 1 1ms i DC Ta 25 C J I Ta 25 C 5 5 0 1 c 10ms NEG e 00ms o W 0 01 j Q o 0 001 0 1 1 0 100 COL
2. Parameter Symbol Min Typ Max Unit Conditions Collector emitter breakdown voltage BVceo 50 70 V Ic 50pnA Collector base breakdown voltage BVceo 50 70 V Ic 50uA Emitter base breakdown voltage BVeso 5 0 V lg 720uA Collector cut off current IcBo 2 0 5 pA Vce 40V Emitter cut off current lego 300 580 pA VeB 4V Collector emitter saturation voltage Vce sat 100 300 mV Ic 100mA Ig 1mA DC current gain Are 500 Vce 5V Ic 200mA Emitter base resistance R 7 10 18 KQ 2 3 QSH29 Transistor e Electrical characterristic curves
3. LECTOR TO EMITTER VOLTAGE Vct V Fig 7 Safe Operating Area 3 3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO LTD Q The contents described herein are subject to change without notice The specifications for the product described in this document are for reference only Upon actual use therefore please request that specifications to be separately delivered Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set Any data including but not limited to application circuit diagrams information described herein are intended only as illustrations of such devices and not as the specifications for such devices ROHM CO LTD disclaims any warranty that any use of such devices shall be free from infringement of any third party s intellectual property rights or other proprietary rights and further assumes no liability of whatsoever nature in the event of any such infringement or arising from or connected with or related to the use of such devices Upon the sale of any such devices other than for buyer s right to use such devices itself resell or otherwise dispose of the same no express or implied right or license to practice or commerc
4. QSH29 Transistors Dual digital transistors QSH29 eFeatures eDimensions Unit mm In addition to the standard features of digital transistor this transisitor has 1 Low collector saturation voltage typically Vce sa 100mvV for Ic IB 100mA 1mA Typ 2 High current gain minimum hre 500mA for Vce 5V Ic 200mA 3 Built in Zener diode for protection against surges when connected to inductive load Abbreviated symbol H29 eStructure NPN silicon epitaxial planar transistor e Applications Driver ePackaging specifications and hre eEquivalent circuit Package TSMT6 Packaging type Taping Type Code TR Basic ordering unit pieces 3000 Emitter QSH29 Q Base Collector Emitter Base Collector eAbsolute maximum ratings Ta 25 C DTi DTr2 gt Parameter Symbol Limits Unit Collector base voltage VcBo 60 10 V Collector emitter voltage VcEo 6010 V Emitter base voltage VeBo 5 V Collector current Sentmuays i 2 mA Pulsed Ice 1 A s EY 1 25 W TOTAL 2 Power dissipation Pp 09 Wit ELEMENT Junction temperature Tj 150 C Range of storage temperature Tstg 55 to 150 C 1 Pw 10ms 1 Pulse 2 Each terminal mounted on a ceramic board 1 3 Transistor QSH29 eElectrical characteristics Ta 25 C DIri DTr2 gt
5. ially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO LTD is granted to any such buyer Products listed in this document are no antiradiation design The products listed in this document are designed to be used with ordinary electronic equipment or devices such as audio visual equipment office automation equipment communications devices electrical appliances and electronic toys Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life such as medical instruments transportation equipment aerospace machinery nuclear reactor controllers fuel controllers and other safety devices please be sure to consult with our sales representative in advance It is our top priority to supply products with the utmost quality and reliability However there is always a chance of failure due to unexpected factors Therefore please take into account the derating characteristics and allow for sufficient safety features such as extra margin anti flammability and fail safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non compliance with the NOTES s
6. pecified in this catalog Thank you for your accessing to ROHM product informations More detail product informations and catalogs are available please contact your nearest sales office ROHM Customer Support System THE AMERICAS EUROPE ASIA JAPAN www rohm com Contact us webmaster rohm co jp TEL 81 75 311 2121 Copyright 2008 ROHM CO LTD ROHM CO LTD 21 Sain Mizosaki cho Ukyo ku Kyoto 615 8585 Japan EAX aeeai 0172 Appendix1 Rev2 0

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