ROHM 2SD2657 handbook
Contents
1. 100mA f 100MHz Corrector output capacitance Cob 11 pF Vce 10V IE 0A f 1MHz Pulsed Rev B 1 2 Transistors eElectrical characteristic curves 1000 s 10 Vce 2V Ic le 20 1 HHHH Tat 00 C H Hii Leulsed S amp EAE FEF FH Pulsed ui gs Ta 40 C i EC gy eem eee z o E Ta 40 C ut o ga 5 100 a E 26 te o 2 t o Q oc 0 Ta 100 C F g zB dw lt CE sat I 25 p 6 Sal ral i 3 T Ta 40 C 10 WS 0 0 0 001 0 01 0 1 1 10 lt u 0 001 0 01 0 1 1 10 mn i COLLECTOR CURRENT lc A 9 COLLECTOR CURRENT lc A Fig 1 DC current gain Fig 2 Collector emitter saturation voltage vs collector current base emitter saturation voltage vs collector current 1000 Vce 2V Ta 25 C Pulsed N Vce 2V T 100MHz 2 E 0 1 Ta 100 C Ta 25 C 3 Lu z a Ta 40 C Ww E 100 o uu g E 5 0 01 u E a 2 x 22. E 0 001 10 0 0 5 1 1 5 0 01 0 1 1 10 BASE TO EMITTER CURRENT Ve V EMITTER CURRENT Ie A Fig 4 Grounded emitter propagation Fig 5 Gain bandwidth product vs collector base voltage Emitter input capacitance vs emitter base voltage characteristics vs emitter current 1000 8 Ta 25 C IE Ic 0A a9 f 1MHz Ou Ale wW Cib SZ 100 ZE O Ee E go Cob E Q5 1 5 a as zo tc Bo EE EO Sw 1 mia 01 1 10 100 8 EMITTER TO BASE VOLTAGE Ves V COLLECTOR TO BASE VOLTAGE Vca V Fig 7 Collector output capacitance 2SD2657 E Ta 25 C Pulsed 8 e Lu o lt 5 9 zu o E 5 1c 18 50 1 E 5 g Ic IB 20 1 f 5 Ic IB 10 1 i 0 01 0 001 0 01 0 1 1 10 Q o COLLECTOR CURRENT lc A Fig 3 Collector emitter saturation voltage vs collector current 1000 Ta 25 C Vce 5V tstg f 100MHz E i 100 v 9 Z 5 tdon E 10 N tr 1 0 01 0 1 1 0 COLLECTOR CURRENT lc A Fig 6 Switching time Rev
3. B 2 2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO LTD The contents described herein are subject to change without notice The specifications for the product described in this document are for reference only Upon actual use therefore please request that specifications to be separately delivered Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set Any data including but not limited to application circuit diagrams information described herein are intended only as illustrations of such devices and not as the specifications for such devices ROHM CO LTD disclaims any warranty that any use of such devices shall be free from infringement of any third party s intellectual property rights or other proprietary rights and further assumes no liability of whatsoever nature in the event of any such infringement or arising from or connected with or related to the use of such devices Upon the sale of any such devices other than for buyer s right to use such devices itself resell or otherwise dispose of the same no express or implied right or license to practice or commercially exploit any intellectual property rights or other pro
4. Transistors 2SD26 Low frequency amplifier 2SD2657 eApplication Low frequency amplifier Driver eFeatures 1 A collector current is large 2 VcE sa max 350mV At Ic 1A ls 50mA eAbsolute maximum ratings Ta 25 C e External dimensions Unit mm 1 Base 2 Emitter 3 Collector Each lead has same dimensions e Packaging specifications 57 Parameter Symbol Limits Unit Package Taping Collector base voltage VcBo 30 V Code TL En ee ee A x Type Basic ordering unit pieces 3000 Ic 15 A 2SD2657 O Collector current lcP 3 A 500 mW Power dissipation Pc T2 W Junction temperature Tj 150 C Range of storage temperature Tstg 55 to 150 C 1 Single pulse Pw ims 2 Mounted on a 25x25x 0 8mm Ceramic substrate Electrical characteristics Ta 25 C Parameter Symbol Min Typ Max Unit Conditions Collector base breakdown voltage BVceo 30 V Ic 10pA Collector emitter breakdown voltage BVcEo 30 V Ic 1mA Emitter base breakdown voltage BVeBo 6 V le 10uA Collector cutoff current IcBo 100 nA Vce 30V Emitter cutoff current IEBo 100 nA VeB 6V Collector emitter saturation voltage VcE sat 140 350 mV Ic 1A le 50mA DC current gain hee 270 680 Vce 2V Ic 100mA Transition frequency fr 300 MHz Vce 2V le
5. prietary rights owned or controlled by ROHM CO LTD is granted to any such buyer Products listed in this document are no antiradiation design The products listed in this document are designed to be used with ordinary electronic equipment or devices such as audio visual equipment office automation equipment communications devices electrical appliances and electronic toys Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life such as medical instruments transportation equipment aerospace machinery nuclear reactor controllers fuel controllers and other safety devices please be sure to consult with our sales representative in advance About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 Item 16 of Export Trade Control Order in Japan In case of export from Japan please confirm if it applies to objective criteria or an informed by MITI clause on the basis of catch all controls for Non Proliferation of Weapons of Mass Destruction Appendix1 Rev1 1
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ROHM 2SD2657 handbook