SONY SLD3022V High Power Density 0.5W Laser Diode handbook (1)
Contents
1. 2578 SLD 322V ME FB ind SLD322V High Power Density 0 5W Laser Diode Description The SLD322V is a high power gain guided laser diode produced by MOCVD method 1 Compared to the SLD300 Series this laser diode has a high brightness output with a doubled optical density which can be achieved by QW SCH structure 1 MOCVD Metal Organic Chemical Vapor Deposition 2 QW SCH Quantum Well Separate Confinement Heterostructure Features High power Recommended optical power output Po 0 5W Low operating current lop 0 75A Po 0 5W Applications e Solid state laser excitation Medical use Material processes Measurement Structure GaAIAs quantum well structure laser diode Absolute Maximum Ratings Tc 25 C Optical power output Po 0 55 W Reverse voltage VR LD 2 V PD 15 V Operating temperature Tc Topr 10 to 30 C e Storage temperature Tstg 40 to 85 C Pin Configuration 1 LD cathode 2 PD anode 3 COMMON Bottom View Sony reserves the right to change products and specifications without prior notice This information does not convey any license by any implication or otherwise under any patents or other right Application circuits shown if any are typical examples illustrating the operation of the devices Sony cannot assume responsibility for any problems arising out of the use of these circuits 1 E93205A81 PS SONY SLD322V Electrical and Optical Characteristics Tc Ca2. 800 805 810 815 Wavelength nm Wavelength nm SONY SLD322V Package Outline Unit mm M 248 LO 11 Reference Slot 0 9 0 0 015 07 7 MAX 6 9 MAX Window Glass 3 5 ce o x lt h E Reference 3 st Plane Si c Q x i E LD Chip S N 3 0 45 d Optical Distance 2 55 0 05 PCD 02 54 SONY CODE M 248 PACKAGE WEIGHT 1 2g EIAJ CODE JEDEC CODE
3. ction Dependence of wavelength 820 Po 500mW oO a 8 E 810 E z 2 2 o gt 8 i 8 gm S o a 790 90 10 0 10 20 30 Angle degree Tc Case temperature C Differential efficiency vs Temperature characteristics T A 0 E gt o 2 aS m 05 4 o 5 i e l a c 0 10 0 10 20 30 Tc Case temperature C SONY Power dependence of spectrum Relative radiant intensity Relative radiant intensity Tc 25 C Po 0 2W 796 798 800 802 804 Tc 25 C Po 0 4W Wavelength nm 796 798 800 802 804 Wavelength nm Relative radiant intensity Relative radiant intensity 0 8 0 6 0 4 0 2 SLD322V Tc 25 C Po 0 3W 796 798 800 802 804 Wavelength nm Tc 25 C Po 0 5W EAM VV Vwa WA AM ANN 796 798 800 802 804 Wavelength nm SONY SLD322V Temperature dependence of spectrum Po 0 5W Relative radiant intensity Relative radiant intensity 785 790 795 805 810 815 Wavelength nm Wavelength nm 1 0 Tc 30 C Tc 25 C 0 8 0 6 0 4 Relative radiant intensity Relative radiant intensity 0 2 785 790 795 800 805 810 815 785 790 795
4. rature control device O SONY SLD322V Example of Representative Characteristics Optical power output vs Forward current characteristics Optical power output vs Monitor current characteristics 1000 Tc 25 C Tc 0 C 500 800 E To 10 C E 3 Tc 30 C 3 600 3 o D 3 8 400 g 250 2 amp 6 fi 200 io 0 0 200 400 600 800 1000 0 0 5 1 0 IF Forward current mA Imon Monitor current mA Threshold current vs Temperature characteristics Power dependence of far field pattern Parallel to junction 1000 500 8 oO E E E z 5 E o 8 2 o D 3 E E c E Po 500mW l 9 s G Po 400mW ne g Po 300mW Pos 200mW i88 Po 100mW 10 0 10 20 30 90 60 30 0 30 60 90 Tc Case temperature C Power dependence of far field pattern Perpendicular to junction Radiation intensity optional scale 90 60 30 0 30 60 90 Angle degree Angle degree Temperature dependence of far field pattern Parallel to junction Radiation intensity optional scale 90 60 30 0 30 60 90 Angle degree SONY SLD322V Temperature dependence of far field pattern Perpendicular to jun
5. se temperature Tc 25 C Item Conditions Threshold current Operating current Po 0 5W Operating voltage Po 0 5W Wavelength 1 Po 0 5W Po 0 5W Monitor current Vn 10V Radiation angle Perpendicular Po 05W degree F W H M Parallel D degree Position um Positional accuracy Po 0 5W Angle degree Differential efficiency Po 0 5W W A F W H M Full Width at Half Maximum Wavelength Selection Classification Type Wavelength nm SLD322V 1 795 5 SLD322V 2 810 10 SLD322V 3 830 10 Type Wavelength nm SLD322V 21 798 3 SLD322V 24 807 3 SLD322V 25 810 3 Handling Precautions Eye protection against laser beams The optical output of laser diodes ranges from Laserdiode Lens several mW to 3W However the optical power density of the laser beam at the diode chip Safety goggles for protection from Optical laser beam material reaches 1MW cm Unlike gas lasers since A T et laser diode beams are divergent uncollimated es 3 i lt lt IR fluorescent plate laser diode beams are fairly safe at a laser CZ C Z2 diode For observing laser beams ALWAYS use L D e safety goggles that block infrared rays Usage of IR scopes IR cameras and fluorescent plates is Optical boad also recommended for monitoring laser beams safely Optical power output control device tempe
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