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OSRAM SYLVANIA SFH 4250 Manual

1. 0 10 10 10 10 10 10 10 s10 p Max Permissible Forward Current Ip f T4 Rinsa 300 K W 120 OHL01716 40 20 Opto Semiconductors OSRAM Vorlaufige Daten Preliminary Data SFH 4250 MaBzeichnung Package Outlines 3 0 0 118 2 1 0 083 2 6 0 102 1 7 0 067 2 3 0 091 0 9 0 035 2 1 0 083 0 7 0 028 0 8 0 031 idu 0 1 0 004 typ 0 6 0 024 A A m A A a ee gt 28 n S Ss ah lt io en S9 es Y tS chy Ie d gig 1406 0 024 s eg 0 4 0 016 Package marking o 0 18 0 007 Pet 0 12 0 005 GPLY6084 MaBe werden wie folgt angegeben mm inch Dimensions are specified as follows mm inch Geh use Package weiB klarer Verguss white clear resin Anschlussbelegung Kathode abgeschr gte Ecke pin configuration Cathode beveled edge 2005 02 21 6 OSRAM Opto Semiconductors Vorlaufige Daten Preliminary Data SFH 4250 Empfohlenes L tpaddesign Recommended Solder Pad IR Flow L ten IR Reflow Soldering Padgeometrie f r verbesserte W rmeableitung 3 3 0 130 e gt Fl che darf elektrisch nicht beschaltet werden Do not use this area for electrical contact 33 0 130 _ Paddesign for impro
2. Bezeichnung Symbol Wert Einheit Parameter Symbol Value Unit Abmessungen der aktiven Chipflache LxB 0 3 x 0 3 mm Dimension of the active chip area LxW Schaltzeiten I von 10 auf 90 und von 90 t t 12 ns auf 10 bei I 100 mA R 50 Q Switching times I from 10 to 90 and from 90 to 10 Ip 100 mA R 50 Q Durchlassspannung Forward voltage Ic 100 mA 1 20 ms Ve 1 5 1 8 V Ip 1 A t 100 us VE 2 4 3 0 V Sperrstrom Ir 0 01 lt 10 uA Reverse current Va E 3 V Gesamtstrahlungsfluss o 40 mW Total radiant flux Ic 100 mA t 20 ms Temperaturkoeffizient von I bzw TC 0 5 9 K Ir 100 mA Temperature coefficient of I or Ir 100 mA Temperaturkoeffizient von Vp Ip 100 mA TCy 0 7 mV K Temperature coefficient of Vc Z 100 mA Temperaturkoeffizient von A 100 mA TC 4 0 2 nm K Temperature coefficient of X I 100 mA 2005 02 21 3 Opto Semiconductors OSRAM Vorlaufige Daten Preliminary Data SFH 4250 Strahlst rke I in Achsrichtung gemessen bei einem Raumwinkel Q 0 01 sr Radiant Intensity I in Axial Direction at a solid angle of Q 0 01 sr Bezeichnung Symbol Werte Einheit Parameter Values Unit SFH 4250 R SFH 4250 S Strahlst rke Tin 10 16 mW sr Radiant intensity Lone 20 32 mW sr Ig 100 mA t 20 ms Strahlst rke Ie typ 100 140 mW sr Radiant i
3. 88 120 s max Ramp Down 6 K s max a 100 s max 100 Ramp Up 50 3 K s max 25 C 0 l l l l l 0 50 100 150 200 250 300 t Wellenl ten TTW nach CECC 00802 TTW Soldering acc to CECC 00802 300 OHLY0598 C 108 Normalkurve standard curve T 20 4 235 C 260 C _ _ _ Grenzkurven 2 Welle limit curves x 2 wave 200 x 1 Welle y 1 wave E x 150 ca 200 K s SVU 2 Kis 100 C 130 247 EN 100 a Er d Zwangsk hlung I 2K s forced cooing 77 50 0 l l l l 0 50 100 150 200 250 f 2005 02 21 8 Opto Semiconductors Vorlaufige Daten Preliminary Data SFH 4250 Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2 D 93049 Regensburg www osram os com All Rights Reserved The information describes the type of component and shall not be considered as assured characteristics Terms of delivery and rights to change design reserved Due to technical requirements components may contain dangerous substances For information on the types in question please contact our Sales Organization Packing Please use the recycling operators known to you We can also help you get in touch with your nearest sales office By agreement we will take packing material back if it is sorted You must bear the costs of transport For packing lee that is returned to us
4. Infrarot LED mit hoher Ausgangsleistung High Power Infrared LED Lead Pb Free Product RoHS Compliant SFH 4250 preliminary data vorlaufige Daten Wesentliche Merkmale Infrarot LED mit sehr hoher Ausgangsleistung Emissionswellenlange typ 850nm Hohe Bestromung bei hohen Temperaturen m glich Anwendungen Infrarotbeleuchtung f r CMOS Kameras R Daten bertragung Sensorik Sicherheitshinweise Je nach Betriebsart emittieren diese Bauteile hochkonzentrierte nicht sichtbare Infrarot Strahlung die gef hrlich f r das menschliche Auge sein kann Produkte die diese Bauteile Features High Power Infrared LED Peak wavelength typ 850nm High forward current allowed at high temperature Applications Infrared Illumination for CMOS cameras IR Data Transmission optical sensors Safety Advices Depending on the mode of operation these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye Products which incorporate these enthalten m ssen gem den Sicherheits devices have to follow the safety precautions richtlinien der IEC Norm 60825 1 behandelt given in IEC 60825 1 Safety of laser products werden Typ Bestellnummer Strahlst rkegruppierung 100mA 1 20 ms Type Ordering Code Radiant Intensity Grouping I mW sr SFH 4250 Q65110A2465 2 10 typ 15 1 gemessen bei einem Raumwinkel Q 0 01 sr measur
5. ed at a solid angle of Q 0 01 sr A Ate 2005 02 21 ATTENTION Observe Precautions For Handling Electrostatic Sensitive Device Opto Semiconductors OSRAM Vorlaufige Daten Preliminary Data SFH 4250 Grenzwerte Maximum Ratings Bezeichnung Parameter Einheit Unit Betriebstemperatur Operating temperature range C Lagertemperatur Storage temperature range C Sperrspannung Reverse voltage V Vorw rtsgleichstrom T lt 65 C Forward current mA Sto strom t 10 us D 0 T 25 C Surge current A Verlustleistung T 25 C Power dissipation mW Warmewiderstand Thermal resistance Sperrschicht Umgebung Junction ambient Sperrschicht L tpad Junction soldering point Montage auf PC Board FR 4 Padgr e 16 mm mounted on PC board FR 4 pad size 2 16 mm Rina Rius 300 140 K W K W Kennwerte T 25 C Characteristics Bezeichnung Parameter Wert Value Einheit Unit Wellenl nge der Strahlung Wavelength at peak emission Ir 100 mA 850 nm Spektrale Bandbreite bei 50 von I max Spectral bandwidth at 50 of Zm Ip 100 mA ax AA 35 nm Abstrahlwinkel Half angle Aktive Chipfl che Active chip area 2005 02 21 Opto Semiconductors Vorlaufige Daten Preliminary Data SFH 4250 Kennwerte T 25 C Characteristics cont d
6. ntensity I 1 A t 100 us Nur eine Gruppe in einer Verpackungseinheit Streuung kleiner2 1 Only one group in one packing unit variation lower 2 1 Radiation Characteristics I f o 40 30 20 10 0 OHLO1660 a 710 50 os a i 0 6 60 las 70 i 20 40 60 80 100 120 2005 02 21 4 Opto Semiconductors OSRAM Vorlaufige Daten Preliminary Data SFH 4250 Relative Spectral Emission Lel f A 100 OHL01714 60 40 20 0 700 750 800 850 nm 950 i Forward Current f Vz Single pulse t 20 us 1 0 OHLO01713 2005 02 21 Radiant Intensity m f Ig e Single pulse 1 20 us OHL01715 10 100 5 10 5 10 ma 10 Ip Permissible Pulse Handling Capability f t T4 25 C duty cycle D parameter OHF02505 1 6 pi Tad or L Lt T ne RN 0 005 1 0 0 01 0 02 0 033 0 8 0 05 01 0 6 0 2 0 5 1 0 4 0 2 Lu IL IN ll ll rnb nul LD DUM 10
7. unsorted or which we are not obliged to accept we shall have to invoice you for any costs incurre Components used in life support devices or systems must be expressly authorized for such purpose Critical components may only be used in life support devices or systems with the express written approval of OSRAM OS A critical component is a component usedin a life support device or system whose failure can reasonably be expected to cause the failure of that life support device or system or to affect its safety or effectiveness of that device or system Life support devices or systems are intended a to be implanted in the human body or b to support and or maintain and sustain human life If they fail itis reasonable to assume that the health of the user may be endangered 2005 02 21 9 Opto Semiconductors OSRAM
8. ved heat dissipation Anode 2 3 0 091 1 1 0 043 3 7 0 146 Do not use this area for electrical contact Fl che darf elektrisch nicht beschaltet werden L tstoplack Solder resist 11 1 0 437 Kathode Cathode Y Cu Fl che 16 mm per pad Cu area OHLPY440 Empfohlenes Lotpaddesign Recommended Solder Pad Wellenl ten TTW TTW Soldering 6 1 0 240 2 8 0 110 improved heat dissipation Fl che darf elektrisch nicht beschaltet werden Padgeometrie f r Fl che darf elektrisch nicht beschaltet werden verbesserte W rmeableitung Do not use this area for electrical contact Cu area Paddesign for 7 L tstoplack ZA Solder resist Anode Do not use this area for electrical contact S ls 5 S gt 05 55 2 FR oo e P gt mon 77 7 Kathode 2 8 0 110 0 5 0 020 Cathode Cu Fl che 16 mm per pad OHAY1583 2005 02 21 Opto Semiconductors OSRAM Vorlaufige Daten Preliminary Data SFH 4250 Lotbedingungen Soldering Conditions IR Reflow Lotprofil fur bleifreies Loten Vorbehandlung nach JEDEC Level 2 Preconditioning acc to JEDEC Level 2 nach J STD 020B IR Reflow Soldering Profile for lead free soldering acc to J STD 020B OHLA0687 em Maximum Solder Profile C Recommended Solder Profile BE Minimum Solder Profile no u Ben Cr T 2504 Re C 5 C Z

OSRAM SYLVANIA SFH 4250 Manual

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