VISHAY VSMS3700 handbook
Contents
1. GaAs BASIC CHARACTERISTICS Tamb 25 C unless otherwise specified 10 000 100 t T 0 005 Tages 60 C 0 01 gt lt B UM 0 02 t z i x 10 S 0 05 2 E 6 100F o gt g S 0 5 E S DC T 3 1 iL 10 0 1 n Js 1 0 1 0 01 4 1 10 100 7 10 10 10 108 104 95 9985 tp Pulse Length ms 94 7956 Forward Current mA Fig 3 Pulse Forward Current vs Pulse Duration Fig 6 Radiant Intensity vs Forward Current 104 1000 a 100 lt E E o 107 5 T 40 Oo c E 10 E E f 1 a 10 x e 107 0 1 0 1 2 3 4 10 10 102 108 104 94 7996 Vr Forward Voltage V 94 8012 Forward Current mA Fig 4 Forward Current vs Forward Voltage Fig 7 Radiant Power vs Forward Current 1 2 1 6 amp 1 1 S 1 2 o gt Ip 20 mA a d E e s 08 LL g 09 E 2 0 4 T 08 gt 0 7 0 0 20 40 60 80 100 10 0 10 50 100 140 94 7990 Tamb Ambient Temperature C 94 7993 Tamb Ambient Temperature C Fig 5 Relative Forward Voltage vs Ambient Temperature Fig 8 Relative Radiant Intensity Power vs Ambient Temperature Document Number 81373 For technical questions contact emittertechsupport vishay com www vishay com R2. VSMS3700 Vishay Semiconductors Infrared Emitting Diode 950 nm GaAs 94 8553 DESCRIPTION VSMS3700 is an infrared 950 nm emitting diode in GaAs technology molded in a PLCC 2 package for surface mounting SMD pu cu AUTOMOTIVE GRADE FEATURES e Package type surface mount e Package form PLCC 2 Dimensions L x W x H in mm 3 5 x 2 8 x 1 75 Peak wavelength A 950 nm High reliability Angle of half intensity 60 RoHS Low forward voltage COMPLIANT GREEN e Suitable for high pulse current operation 15 2008 Good spectral matching with Si photodetectors Package matched with IR emitter series VEMT3700 Floor life 168 h MSL 3 acc J STD 020 Lead Pb free reflow soldering AEC Q101 qualified e Compliant to RoHS directive 2002 95 EC and accordance to WEEE 2002 96 EC e Find out more about Vishay s Automotive Grade Product requirements at www vishay com applications in APPLICATIONS Infrared source in tactile keyboards R diode in low space applications e PCB mounted infrared sensors e Emitter in miniature photo interrupters PRODUCT SUMMARY COMPONENT le mW sr deg p nm t ns VSMS3700 4 5 60 950 800 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMS3700 GS08 Tape and reel MOQ 7500 pcs 1500 pcs re
3. acting on its or their behalf collectively Vishay disclaim any and all liability for any errors inaccuracies or incompleteness contained herein or in any other disclosure relating to any product Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase including but not limited to the warranty expressed therein which apply to these products No license express or implied by estoppel or otherwise to any intellectual property rights is granted by this document or by any conduct of Vishay The products shown herein are not designed for use in medical life saving or life sustaining applications unless otherwise expressly indicated Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications Product names and markings noted herein may be trademarks of their respective owners Document Number 91000 www vishay com Revision 18 Jul 08 1
4. dering and removing from MBB must not exceed the time indicated on MBB label Floor life 168 h Conditions Tamb lt 30 C RH lt 60 96 Moisture sensitivity level 3 acc to J STD 020 DRYING In case of moisture absorption devices should be baked before soldering Conditions see J STD 020 or label Devices taped on reel dry using recommended conditions 192 hat 40 C 5 C RH lt 5 96 TAPE AND REEL PLCC 2 components are packed in antistatic blister tape DIN IEC CO 564 for automatic component insertion Cavities of blister tape are covered with adhesive tape Adhesive tape Component cavity 94 8670 Fig 12 Blister Tape Document Number 81373 Rev 1 3 03 Nov 09 Infrared Emitting Diode 950 nm GaAs For technical questions contact emittertechsupport vishay com VSMS3700 Vishay Semiconductors 2 2 2 0 4 0 3 6 94 8668 Fig 13 Tape Dimensions in mm for PLCC 2 MISSING DEVICES A maximum of 0 5 96 of the total number of components per reel may be missing exclusively missing components at the beginning and at the end of the reel A maximum of three consecutive components may be missing provided this gap is followed by six consecutive components mmm De reeling direction 94 8158 40 empty min 75 empty compartments compartments Tape leader Carrier leader Carrier trailer Fig 14 Beginning and End of Reel The tape leader is at least 160 mm and is follow
5. ed by a carrier tape leader with at least 40 empty compartments The tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape The least component is followed by a carrier tape trailer with a least 75 empty compartments and sealed with cover tape www vishay com 326 VSMS3700 Vishay Semiconductors 10 0 9 0 Identification Label Vishay type group tape code production code ry 63 5 60 5 Li 180 14 4 max quantity 178 Fig 15 Dimensions of Reel GS08 94 8665 Identification Label Vishay type group tape code production code 321 14 4 max quantity Fig 16 Dimensions of Reel GS18 www vishay com 327 For technical questions contact emittertechsupport vishay com 18857 Infrared Emitting Diode 950 nm GaAs COVER TAPE REMOVAL FORCE The removal force lies between 0 1 N and 1 0 N at aremoval speed of 5 mm s In order to prevent components from popping out of the blisters the cover tape must be pulled off at an angle of 180 with regard to the feed direction Document Number 81373 Rev 1 3 03 Nov 09 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice Vishay Intertechnology Inc its affiliates agents and employees and all persons
6. el PLCC 2 VSMS3700 GS18 Tape and reel MOQ 8000 pcs 8000 pcs reel PLCC 2 Note MOQ minimum order quantity Please see document Vishay Material Category Policy www vishay com doc 99902 Document Number 81373 Rev 1 3 03 Nov 09 For technical questions contact emittertechsupport vishay com www vishay com 322 VSMS3700 Vishay Semiconductors Infrared Emitting Diode 950 nm GaAs ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5 V Forward current lE 100 mA Peak forward current t T 0 5 tp 100 us lem 200 mA Surge forward current tp 100 us lesm 1 5 A Power dissipation Py 170 mW Junction temperature Tj 100 C Operating temperature range Tamb 40 to 85 C Storage temperature range Tstg 40 to 100 C Soldering temperature Acc figure 11 J STD 020 Tsa 260 C Thermal resistance junction ambient J STD 051 soldered on PCB Rthua 250 K W Note Tamb 25 C unless otherwise specified 180 120 _ 160 x t 140 E S 120 g 9 z 5 3 100 8 x D ORO E Ra 250 KW 60 g 4 o ra FEE m 20 2 20 0 0 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100 21341 T4 Ambient Temperature C 21342 Tamb A
7. ev 1 3 03 Nov 09 324 VSMS3700 Vishay Semiconductors Infrared Emitting Diode 950 nm GaAs 1 25 F 7 i LL Bor 8 mI 8 PSO i S 075 S E E E ON E E LTC o 9 05 E L Ty E E li 7 E 3 E XH E T 025 2 XS VU Lo 0 z ASANTI e HERR SS 0 CCE SSN i 900 950 1000 94 8013 94 7994 Wavelength nm Fig 9 Relative Radiant Power vs Wavelength Fig 10 Relative Radiant Intensity vs Angular Displacement PACKAGE DIMENSIONS in millimeters M technical drawings rc according to DIN specifications Mounting Pad Layout area covered with solder resist 5 E D C A ed y lt N e Drawing No 6 541 5067 01 4 Issue 5 04 11 08 20541 Die Position for reference only X 0 2 mm centrical Y 0 2 mm centrical Z 1 13 mm 0 25 mm from top of die bottom of component www vishay com For technical questions contact emittertechsupport vishay com Document Number 81373 325 Rev 1 3 03 Nov 09 SOLDER PROFILE o D max 30 s 2 S D max 120s max 100 s E o ke max ramp up 3 C s max ramp down 6 C s 0 50 100 150 200 250 300 19841 Time s Fig 11 Lead Pb free Reflow Solder Profile acc J STD 020 DRYPACK Devices are packed in moisture barrier bags MBB to prevent the products from moisture absorption during transportation and storage Each bag contains a desiccant FLOOR LIFE Floor life time between sol
8. mbient Temperature C Fig 1 Power Dissipation Limit vs Ambient Temperature Fig 2 Forward Current Limit vs Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN TYP MAX UNIT lF 100 mA tp 20 ms Vr 1 8 1 7 V Forward voltage lF 1A tp 100 us Vr 1 8 V Temperature coefficient of Ve lp 100 mA TKyr 1 3 mV K Reverse current VR 5V IR 100 UA Junction capacitance Vr 0V f 1 MHz E 0 Cj 30 pF lF 100 mA tp 20 ms le 1 6 4 5 8 mW sr Radiant intensity lF 1 5 A tp 100 us le 35 mW sr Radiant power lF 100 mA tp 20 ms e 15 mW Temperature coefficient of e lc 100 mA TK e 0 8 96 K Angle of half intensity 9 60 deg Peak wavelength lc 100 mA p 950 nm Spectral bandwidth lp 100 mA AX 50 nm Temperature coefficient of Ap lc 100 mA TKAp 0 2 nm K oo lp 20 mA t 800 ns Rise time IF 1A tr 400 ns lp 20 mA tr 800 ns Fall time IF 1A tr 400 ns Virtual source diameter EN 60825 1 d 0 5 mm Note Tamb 25 C unless otherwise specified www vishay com For technical questions contact emittertechsupport vishay com Document Number 81373 323 Rev 1 3 03 Nov 09 VSMS3700 Infrared Emitting Diode 950 nm Vishay Semiconductors
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