VTD205K handbook
Contents
1. Alternate Source VTD205K Second Source Photodiodes SFH205K INDUSTRY EQUIVALENT PACKAGE DIMENSIONS inch mm 165 4 19 1275 6 99 EPOXY CONTOUR NOT CONTROLLED 155 3 94 245 6 22 ON THIS SURFACE 026 0 86 023 0 58 020 0 51 017 0 43 SENSITIVE RT a E CATHODE 100 a NOM ANODE 2 54 n a a ey ge MARE m E ANODE 098 si 189 182 NOM 2 49 NOM 4 80 102 2 59 p l 75 19 0 037 2 46 MINIMUM CASE60 0 92 TYPE ROUND LENS CHIP ACTIVE AREA 011 in 7 41 mm PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Large area planar silicon photodiode in a waterclear Storage Temperature 40 C to 100 C cast epoxy sidelooker similar in outline to the TO 92 Operating Temperature 40 C to 100 C package These diodes exhibit low dark current under reverse bias and fast speed of response ELECTRO OPTICAL CHARACTERISTICS 25 C VTD205K SYMBOL CHARACTERISTIC TEST CONDITIONS Typ Short Circuit Current 1000 Lux 2850 K Isc Temperature Coefficient 2856 K Open Circuit Voltage 940 nm H 0 5 mW cm Voc Temperature Coefficient 2856 K Dark Current H 0 Vp 10V Junction Capacitance H 0 Vp OV 1 MHz Rise Fall Time RL 50 VR 5 V 850 nm Sensitivity Peak Spectral Application Range Spectral Response Peak Breakdown Voltage Angular Resp 50 Resp Pt Degrees PerkinElmer Optoelectronics 10900 Page A2. ve St Louis MO 63132 USA Phone 314 423 4900 Fax 314 423 3956 Web www perkinelmer com opto 76
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VTD205K handbook