ALPHA OMEGA AO4806 Dual N-Channel Enhancement Mode Field Effect Transistorhandbook
Contents
1. 28A 48066 hv 9 ALPHA amp OMEGA SEMICONDUCTOR P AO4806 Dual N Channel Enhancement Mode Field Effect Transistor General Description Features The AO4806 uses advanced trench technology to Vps V 20V provide excellent Rps oy and low gate charge They lp 9 4A Veg 10V offer operation over a wide gate drive range from 1 8V Roson lt 14MQ Vas 10V to 12V It is ESD protected This device is suitable for Roson lt 15 Ves 4 5V use as a uni directional or bi directional load switch Roson lt 21mQ Veg 2 5V facilitated by its common drain configuration Standard Product AO4806 is Pb free meets ROHS amp Sony 259 specifications AO4806L is a Green Product ordering option AO4806 and AO4806L are electrically identical Roson lt 30 Ves 1 8V ESD Rating 2000V HBM Parameter Drain Source Voltage Gate Source Voltage Continuous Drain 25 Current 70 Pulsed Drain Current 25 Power Dissipation 70 Thermal Characteristics Parameter Maximum Junction to Ambient Maximum Junction to Ambient Steady State Maximum Junction to Lead 2 Steady State Alpha amp Omega Semiconductor Ltd AO4806 Electrical Characteristics T 25 C unless otherwise noted symbol Parameter Conditions Min Typ Units STATIC PARAMETERS Drain Source Breakdown Voltage 25 Veg 0V 20 v Icss GateSoureleskagecuren Vos 0V Vasset2. he SOA curve provides a single pulse rating Rev 3 Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha amp Omega Semiconductor Ltd AO4806 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 TEREE 12 Lf feel f Ip A Vps Volts Veswvolts Fig 1 On Region Characteristics Figure 2 Transfer Characteristics o o 5 i 8 a a T E o z 0 5 10 15 20 0 25 50 75 100 125 150 175 lp Temperature Figure 3 On Resistance vs Drain Current and Figure 4 On Resistance vs Junction Gate Voltage Temperature 1 0 01 1 0 00 1 0 01 1 0 02 2 d a 1 0E 03 1 0E 04 1 0E 05 0 0 0 2 0 4 0 6 0 8 1 0 1 2 Ves Volts Vsp Volts Figure 5 On Resistance vs Gate Source Voltage Figure 6 Body Diode Characteristics Alpha amp Omega Semiconductor Ltd AO4806 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Ves Volts Capacitance pF Q nC Vps Volts Figure 7 Gate Charge Characteristics Figure 8 Capacitance Characteristics UU 25 Hl 100 0 Ip Amps Powe
3. ov Voss Gate SourceBreakdown Voltage 0 250 S2 V Vos Ves 0 250 Vos TOV 4 L Eu TE meme Static Drain Source On Resistance Ves 4 5V b 8A 16 16 25 O 165 2 Vase 294 so Forward Transconductance oaa 5 DodeFowardVotapg hea o 972 3 V Maximum Body Diode Continuous Current 18 a Ces Output Capacitance Ves 0V Vos 10V f 1MHz Re Geeresstane VaV EM SWITCHING PARAMETERS o Total Gate Charge Gate Chare Qu Gate Dran ir Body Diode Reverse Recovery Tine _ F 94A 22 ns JQ Body Diode Reverse Recovery Charge F 9 4A 86 rc A The value of R j4 is measured with the device mounted on 11 FR 4 board with 202 Copper in a still air environment with 25 The value in given application depends on the user s specific board design The current rating is based on the tx 10s thermal resistance rating B Repetitive rating pulse width limited by junction temperature C The is the sum of the thermal impedence from junction to lead and lead to ambient D The static characteristics in Figures 1 to 6 are obtained using 80 5 pulses duty cycle 0 5 max E These tests are performed with the device mounted on 1 in FR 4 board with 202 Copper in a still air environment with 25 T
4. r W S KCN T 10 100 0 001 0 01 0 1 1 100 1000 Volts Pulse Width a Figure 10 Single Pulse Power Rating Junction to Figure 9 Maximum Forward Biased Safe Ambient Note E Operating Area Note E D T T In descending order Ty pk Tat Ppm Zoua Roua D 0 5 0 3 0 1 0 05 0 02 0 01 single pulse Roj4762 5 C W e m 20 Normalized Transient Thermal Resistance 0 01 0 00001 0 0001 0 001 0 01 0 1 1 10 100 1000 Pulse Width s Figure 11 Normalized Maximum Transient Thermal Impedance Alpha amp Omega Semiconductor Ltd WWW ZFA CN Ph WWW 2 CA WALA PAK R 41662 gl XA 26 XYI 0755 83278916 83278919 010 62632888 62636888
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ALPHA OMEGA AO4806 Dual N Channel Enhancement Mode Field Effect Transistorhandbook