ALPHA OMEGA AO4805 Dual P-Channel Enhancement Mode Field Effect Transistor handbook
Contents
1. 0020 L 00 127 006 0050 aa 910 994 Le o L s H o NOTE 1 LEAD FINISH 150 MICROINCHES 3 8 um MIN THICKNESS OF Tin Lead SOLDER PLATED ON LEAD 2 TOLERANCE 0 10 mm 4 mil UNLESS OTHERWISE SPECIFIED 3 COPLANARITY 0 10 mm 4 DIMENSION L IS MEASURED IN GAGE PLANE PACKAGE MARKING DESCRIPTION RECOMMENDED LAND PATTERN k NOTE LOGO AOS LOGO 4805 PART NUMBER CODE QU q FAB LOCATION a ASSEMBLY LOCATION FAYWLT YEAR CODE WEEK CODE LN ASSEMBLY LOT CODE bad 1 _ s 80 UNIT mm Rev A ALPHA amp OMEGA SO 8 Tape and Reel Data SEMICONDUCTOR INC SO 8 Carrier Tape UNIT MM ao 0 refr 50 8 6 40 520 2 10 160 1 30 1800 173 5 50 8 00 mm 0 10 0 10 0 10 0410 0 10 0 30 30 10 005 0 10 SO 8 Reel UNIT MM SIZE REEL sr M N w v sa pss Toe 12 mm 9330 2330 00 497 00 13 00 17 40 213 00 1060 2 00 50 8 Leader Trailer amp Orientation CUP C CO TRAILER CEMPDNENTS LEADER TAPE 300 mn MIN OR ORIENTATION IN POCKET 500 mm MIN OR 75 EMPTY POCKETS 125 EMPTY POCKETS2. 218A O 4805 V f ALPHA amp OMEGA SEMICONDUCTOR INC June 2002 AO4805 Dual P Channel Enhancement Mode Field Effect Transistor General Description Features The AO4805 uses advanced trench technology to Vps V 30V provide excellent Rps on and ultra low low gate lp 8A charge with a 25V gate rating This device is suitable Rostov lt 18 Ves 20V for use as a load switch or in PWM applications Rostov lt 19 Vos 10V Absolute Maximum Ratings 4 25 unless otherwise noted Parameter Symbol Maximum Drain Source Voltage 30 Gate Source Voltage Continuous Drain Current Thermal Characteristics Parameter Typ id Alpha amp Omega Semiconductor Ltd AO4805 Electrical Characteristics T 225 C unless otherwise noted Symbol Parameter Conditions min Typ Max Units STATIC PARAMETERS Drain Source Breakdown Voltage 1 250 Vos 0V 0 v 5 00 nA Mass Gate Threshold Voltage VesVas low On state arain curent 107 V sv Ta Vos 10V lb 8A tefe Rps oN Static Drain Source On Resistance T 125 C _ 205 25 _____ 5 t mo uem _____ __ 39 mo Forward Transconductance DYNAMIC PARAMETERS mwe Cs OuutCapagtancs ___________ 0 Vos7 1SV f tMHz Tso PF f R jGweressam
3. Temperature 1 0 01 1 0 00 1 0 01 1 0E 02 5 8 1 0E 03 x 1 0E 04 1 0E 05 1 0E 06 0 0 0 2 0 4 0 6 0 8 1 0 1 2 Ves Volts Vsp Volts Figure 5 On Resistance vs Gate Source Voltage Figure 6 Body Diode Characteristics Alpha and Omega Semiconductor Ltd AO4805 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Ves Volts Capacitance pF Q nC Vps Volts Figure 8 Capacitance Characteristics 100 0 100 2 Amps Power W 0 01 0 1 1 10 1000 Vps Volts Pulse Width s Figure 10 Single Pulse Power Rating Junction to Ambient Note E Figure 9 Maximum Forward Biased Safe Operating Area Note E In descending order 020 5 0 3 0 1 0 05 0 02 0 01 single pulse Zsa Normalized Transient Thermal Resistance 0 01 0 00001 0 0001 0 001 0 01 0 1 1 10 100 1000 Pulse Width s Figure 11 Normalized Maximum Transient Thermal Impedance Alpha amp Omega Semiconductor Ltd ALPHA amp OMEGA SO 8 Package Data SEMICONDUCTOR INC A i5 i3 13 997 0 059 0261 AL 90 o 900 909 2 145 To Le 000 c o 05 997 90010 D j 48 56 0189 0197 ns poses e eomm e J 1275 oosoBsC 39 T sz n 95 o oo
4. e Ves vv iz 2 SWITCHING PARAMETERS 0 Total Gate Charge 39 __ Gate Source Charge Qa Gate Drain Charge tr Body Diode Reverse Recovery Time 8 32 ns Diode Reverse Recovery Charge 100 __ hc A The value of is measured with the device mounted on 1in FR 4 board with 202 Copper in a still air environment with T 25 C The value in any a given application depends on the user s specific board design The current rating is based on the ts 10s thermal resistance rating B Roine rating pulse width limited by junction temperature C The is the sum of the thermal impedence from junction to lead and lead to ambient D The static characteristics in Figures 1 to 6 12 14 are obtained using 80us pulses duty cycle 0 5 max E These tests are performed with the device mounted on 1 in FR 4 board with 2oz Copper in a still air environment with TA225 C SOA curve provides a single pulse rating Alpha amp Omega Semiconductor Ltd AO4805 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25 a 10 5 52 35 4 4 5 Vps Volts Mu Fig 1 On Region Characteristics Figure 2 Transfer Characteristics 5 7 z c 8 x D T o z lp A 0 25 50 75 100 125 150 175 Figure 3 On Resistance vs Drain Current and Gate Temperature C Voltage Figure 4 On Resistance vs Junction
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ALPHA OMEGA AO4805 Dual P Channel Enhancement Mode Field Effect Transistor handbook