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VISHAY SEMICONDUCTOR VESD05A4A-HS4 Manual

1. 1 0 0 01 0 1 1 10 100 1000 10000 HA Figure 5 Typical Reverse Voltage Vg vs Reverse Current Ip 20890 positive surge 5 a Measured Yo 0 acc IEC 61000 4 5 gt 8 20 us wave form l l BiSy mode 5 negative surge 10 15 0 1 2 3 20891 loo A Figure 6 Typical Peak Clamping Voltage Vc vs Peak Pulse Current lpp Document Number 81786 For technical support please contact ESD Protection vishay com www vishay com Rev 1 2 27 Mar 08 5 VESD05A4A HS4 Vishay Semiconductors 12 150 acc IEC 61000 4 2 contact discharge 10 positive surge 1 100 50 6 S S Measured Vo o 4 acc IEC 61000 4 5 _ 2 0 gt 8 20 us wave form s 2 gt 50 0 i BiAs mode L li 100 2 negative surge 4 150 0 1 2 3 0 5000 10000 15000 20000 20892 Ip A 20895 Vesp KV Figure 7 Typical Peak Clamping VoltageVc vs Figure 10 Typical Peak Clamping Voltage at ESD Contact Peak Pulse Current lpp Discharge acc IEC 61000 4 2 acc contact discharg Vo esp V 0 10 0 10 20 30 40 50 60 70 80 90 20893 t ns Figure 8
2. VESD05A4A HS4 BiAs mode each input pin 1 3 4 and 5 to ground pin 2 and or 6 Parameter Test conditions remarks Symbol Min Typ Max Unit Protection paths number of line which can be protected N lines 4 lines Reverse stand off voltage at lg 0 1 pA VnwM 5 V Reverse current at Va Vawm 5 V In 0 01 0 1 uA Reverse breakdown voltage atlg 1 mA VBR 6 8 V Clamping voltage at Ipp 2 5 A acc IEC 61000 4 5 Vc 12 V Forward clamping voltage at lp 2 5 A acc IEC 61000 4 5 Ve 25 V at Vg O V f 1 MHz Cp 12 15 pF Capacitance at Vp 2 5 V f 1 MHz Cp 7 5 8 5 pF If a higher surge current or Peak Pulse current lpp is needed some protection diodes in the VESDO05A4A HSA can also be used in parallel in order to multiply the performance If two diodes are switched in parallel you get double surge power double peak pulse current 2 x Ippy half of the line inductance reduced clamping voltage half of the line resistance reduced clamping voltage double line Capacitance 2 x Cp double Reverse leakage current 2 x Ip 20900 Document Number 81786 For technical support please contact ESD Protection vishay com www vishay com Rev 1 2 27 Mar 08 3 VESD05A4A HS4 Vishay Semiconductors Gy VISHAY BiSy mode 3 line Bidirectional Symmetrical protection mode If a bipolar symmetrical protection device is needed the VESD05A4A
3. Vishay Semiconductors Absolute Maximum Ratings Rating Test conditions Symbol Value Unit BiAs mode each input pin 1 3 5 to ground pin 2 and 6 25 A A acc IEC 61000 4 5 tp 8 20 us single shot FEM ea se current E BiSy mode each input pin 1 3 5 to any other input pin 25 A Pin 2 and 6 not connected Acc IEC 61000 4 5 t 8 20 us single shot PPM i BiAs mode each input pin 1 3 5 to ground pin 2 and 6 P 30 w eeu acc IEC 61000 4 5 tp 8 20 ps single shot PE eak pulse power i PES BiSy mode each input pin 1 3 5 to any other input pin P 33 w Pin 2 and 6 not connected Acc IEC 61000 4 5 tp 8 20 us single shot PP contact V 15 kV acc IEC61000 4 2 10 pulses discharge ESP BiAs mode each input pin 1 3 5 to ground pin 2 and 6 air Vesp 17 kV i discharge ESD immunity contact acc IEC 61000 4 2 10 pulses discharge Vesp 15 kV BiSy mode each input pin 1 3 5 to any other input pin air Pin 2 and 6 not connected V discharge ESD Ew RV Operating temperature junction temperature Ty 40 to 125 C Storage temperature Tera 55to 150 C BiAs Mode 4 line Bidirectional Asymmetrical protection mode With the VESD05A4A HS4 up to 4 signal or data lines L1 L4 can be protected against voltage transients With pin 2 and 6 connected to ground and pin 1 3 4 and 5 connected to a signal or data line which has to
4. vishay com www vishay com Rev 1 2 27 Mar 08 7 VESD05A4A HS4 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1 Meet all present and future national and international statutory requirements 2 Regularly and continuously improve the performance of our products processes distribution and operating systems with respect to their impact on the health and safety of our employees and the public as well as their impact on the environment It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ODSs The Montreal Protocol 1987 and its London Amendments 1990 intend to severely restrict the use of ODSs and forbid their use within the next ten years Various national and international initiatives are pressing for an earlier ban on these substances Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents 1 Annex A B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 Class and I ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency EPA in the USA 3 Council Decision 88 540 EEC and 91 690 EEC Annex A B and C transitional substances respectively Vishay Semiconductor Gmb
5. HS4 can also be used as a three line protection device Therefore three pins example pin 1 3 and 5 has to be connected to the signal or data line L1 L3 and pin 3 to ground Pin 2 and 6 must not be connected Positive and negative voltage transients will be clamped in the same way The clamping current from one data line through the VESD05A4A HS4 to the ground passes one diode in forward direction and the other one in reverse direction The Clamping Voltage Vc is defined by the BReakthrough Voltage Vgg level of one diode plus the forward voltage of the other diode plus the voltage drop at the series impedances resistances and inductances of the protection device Due to the same clamping levels in positive and negative direction the VESDO5A4A HS4 voltage clamping behaviour is also Bidirectional and Symmetrical BiSy 20901 Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified VESD05A4A HS4 BiSy mode each input pin 1 3 4 or 5 to any other input pin connected to ground pin 2 and 6 not connected Parameter Test conditions remarks Symbol Min Typ Max Unit Protection paths number of line which can be protected Niines 3 lines Reverse stand off voltage at Ig 0 1 pA VnwM 5 5 V Reverse current at Ve Vawo 5 5 V IR lt 0 01 0 1 uA Reverse breakdown voltage atIR 1mA Van 6 5 8 7 V Clamping voltage at Ipp 2 5 A acc
6. IEC 61000 4 5 Vc 11 5 13 V at Vp 0 V f 1 MHz Cp 6 8 pF Capacitance at Va 2 5 V f 1 MHz Cp 5 7 pF www vishay com For technical support please contact ESD Protection vishay com Document Number 81786 4 Rev 1 2 27 Mar 08 VESD05AA4A HS4 Gy VISHAY Typical Characteristics Tamb 25 C unless otherwise specified 100 8 us to 100 80 60 epu 20 us to 50 96 4 40 20 0 0 10 20 30 40 20548 Time us Figure 1 8 20 us Peak Pulse Current Wave Form acc IEC 61000 4 5 120 a 100 a t 80 o 5 o 60 96 5 53 96 S 40 o 2 a 27 20 96 0 O 10 0 10 20 30 40 50 60 70 80 90100 20557 Time ns Figure 2 ESD Discharge Current Wave Form acc IEC 61000 4 2 330 0 150 pF 14 f 1 MHz 12 BiAs mode 10 8 iL amp g s 4 BiSy mode 2 0 0 1 2 3 4 5 6 20888 Va V Figure 3 Typical Capacitance Cp vs Reverse Voltage Vg Vishay Semiconductors 100 10 EA 1 lt x 0 1 0 01 0 001 0 5 0 6 0 7 0 8 0 9 1 20889 V V Figure 4 Typical Forward Current Ip vs Forward Voltage VE Va V
7. Typical Clamping Performance at 8 kV Contact Discharge acc IEC 61000 4 2 Vesp V E 20 30 40 50 60 10 0 10 20 30 40 50 60 70 80 90 20894 t ns Figure 9 Typical Clamping Performance at 8 kV Contact Discharge acc IEC 61000 4 2 www vishay com For technical support please contact ESD Protection vishay com Document Number 81786 6 Rev 1 2 27 Mar 08 VESD05A4A HS4 Vishay Semiconductors Gy VISHAY Package Dimensions in millimeters inches LLP1010 5L 0 22 0 009 Exp DAP a lt x vw1 a oc Qa x 79 i A o o o Y S i IN 2 9 ma ite a ceo t o o o 0 25 0 010 o9 5 a 8 S 0 15 0 006 ajz D o o e o i ra io azn i lee el 8 e nm m ig o e O ite 5 5 8 8 a Pin 1 marking 2 2 Sg o 2 8 8 olo So 0 95 0 037 1 05 0 041 1 05 0 041 0 95 0 037 foot print recommendation 0 3 0 012 OR a 5 8 8 o S 2 S 0 35 0 014 solder resist mask S i15 p m N e O oy Oo fo o r i es eee solder pad 4 Document no S8 V 3906 04 004 4 Created Date 17 July 2007 soldermask opening 0 03 Rev 1 Date 08 October 2007 measured middle of the package 20899 Document Number 81786 For technical support please contact ESD Protection
8. H can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances We reserve the right to make changes to improve technical design and may do so without further notice Parameters can vary in different applications All operating parameters must be validated for each customer application by the customer Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application the buyer shall indemnify Vishay Semiconductors against all claims costs damages and expenses arising out of directly or indirectly any claim of personal damage injury or death associated with such unintended or unauthorized use Vishay Semiconductor GmbH P O B 3535 D 74025 Heilbronn Germany www vishay com For technical support please contact ESD Protection vishay com Document Number 81786 8 Rev 1 2 27 Mar 08 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice Vishay Intertechnology Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies Information contained herein is intended to provide a product description only No license express or implied by estoppel or otherwise to any intellectual property rights is granted by this document Except as provided in Vishay s terms and conditions of sale for such products Vishay assumes no liability
9. VESD05AA4A HS4 Vishay Semiconductors 4 Line Quad ESD Protection Diode Array in LLP1010 5L b J VISHAY Features e Ultra compact LLP1010 5L package Low package height 0 4 mm e 4 line ESD protection quad e Low leakage current lt 0 1 pA Low load capacitance Cp 12 pF e ESD protection acc IEC 61000 4 2 x 15 kV contact discharge 17 kV air discharge e Surge current acc IEC 6100 4 5 lpp gt 2 5 A e Soldering can be checked by standard vision inspection No X ray necessary Lead Pb free component Pin plating NiPdAu e4 no whisker growth Green molding compound Non magnetic Component in accordance to RoHS 2002 95 EC and WEEE 2002 96 EC Marking example only XX dot Pin 1 marking YY XX Date code e m YY Type code see table below Ordering Information Device name Ordering code Taped units per reel 8 mm tape on 7 reel Minimum order quantity VESD05A4A HS4 VESD05A4A HS4 GS08 5000 5000 Package Data Package Type Molding Device name g yp Weight compound Moisture sensitivity level Soldering conditions name code A flammability rating VESDOSA4A HS4 LLP1010 5L A 107m UL 94 V 0 MS aver 260 C 10 s at terminals mee according J STD 020 Document Number 81786 Rev 1 2 27 Mar 08 For technical support please contact ESD Protection vishay com www vishay com 1 VESD05A4A HS4
10. be protected As long as the voltage level on the data or signal line is between 0 V ground level and the specified Maximum Reverse Working Voltage Vay the protection diode between data line and ground offer a high isolation to the ground line The protection device behaves like an open switch As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode the diode becomes conductive and shorts the transient current to ground Now the protection device behaves like a closed switch The Clamping Voltage Vc is defined by the BReakthrough Voltage Vgg level plus the voltage drop at the series impedance resistance and inductance of the protection device Any negative transient signal will be clamped accordingly The negative transient current is flowing in the forward direction of the protection diode The low Forward Voltage Vg clamps the negative transient close to the ground level Due to the different clamping levels in forward and reverse direction the VESD05A4A HS4 clamping behaviour is Bidirectional and Asymmetrical BiAs L4 L3 20898 L1 Ground www vishay com For technical support please contact ESD Protection vishay com Document Number 81786 2 Rev 1 2 27 Mar 08 VESD05AA4A HS4 Vishay Semiconductors b J VISHAY Electrical Characteristics Ratings at 25 C ambient temperature unless otherwise specified
11. whatsoever and disclaims any express or implied warranty relating to sale and or use of Vishay products including liability or warranties relating to fitness for a particular purpose merchantability or infringement of any patent copyright or other intellectual property right The products shown herein are not designed for use in medical life saving or life sustaining applications Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale Document Number 91000 www vishay com Revision 08 Apr 05 1

VISHAY SEMICONDUCTOR VESD05A4A-HS4 Manual

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