ST STB80NF55-06 STB80NF55-06-1 STP80NF55-06 STP80NF55-06FP handbook
Contents
1. 0x9 0 8 50 0 50 100 TCC 5 12 STB80NF55 06 1 STP80NF55 06 STP80NF55 06FP Fig 2 Unclamped Inductive Waveform Fig 1 Unclamped Inductive Load Test Circuit UNCLAMPED INDUCTIVE WAVEFORMS L V BR DSS Vp 0 9 2200 3 3 o uF pF Von 2 gl lp Sage Ge 3 V DUT Von H UI i E TO C05970 5005980 Fig 3 Switching Times Test Circuits For Resistive Fig 4 Gate Charge test Circuit Load fae DB 4 12V ol VI 47KA ue Ri 2200 3 3 aa ph HF Voo g CONST xn Vp o pep V 20V Vemax E 000 X D U T Ves 9 i u Re t 2290 2 7K0 Vo ie DU T LI a ATK W 5 160 3l SC05990 i 5006000 Fig 5 Test Circuit For Inductive Load Switching And Diode Recovery Times gt A A OA Os FAST DIODE 4 L 100uH G B A S gt B gt B PB kd 250 D e S HF 100 HR zz ul aD D U T ri Q Von SCOB010 Q 6 12 STB80NF55 06 1 STP80NF55 06 STP80NF55 06FP D2PAK MECHANICAL DATA mm inch DIM MIN TYP MAX MIN TYP TYP A2. 300 us duty cycle 1 5 96 e Pulse width limited by safe operating area Safe Operating Area for TO 220 Safe Operating Area for TO 220FP GC96290 GC96300 lo A Io A 4 4 xO nail 2 3 N NI IN 2 o A N N 10 a N N 1004s 10 S O0us spes 6 A 4 N Xl 4 ES V ims JS 1 ms 10 10 5 10 sl duse 4 4 2 2 10 10 6 6 4 4 A D C OPERATION 3 D 1 1 10 12 4 68 o 4 68 12 4 68 22 4 68 10 12 4 68 22 4 68 10 10 10 10 Vos V 10 10 Vos V STB80NF55 06 1 STP80NF55 06 STP80NF55 06FP Thermal Impedance 280T0J GC94600 K d0 SA gen LE EGET 0 2 E E 0 05 10 0 02 0 01 Zin Rinse tp 7 SINGLE PULSE jus x 10 1075 0 5 107 te s Output Characteristics GC96310 lo A 9V 8V Ves 10V 400 300 TV 200 100 6V 5V 0 2 4 Vos V Transconductance GC96330 gis S 80 60 40 60 90 120 1004 Thermal Impedance for TO 220FP K 105 TOFPJ GC96410 d 0 0 2 0 1 e OOHO N Zth
3. Ri c 1075 Transfer Characteristics In A 400 300 200 100 0 Static Drain source On Resistance 10 tr s GC96320 Rps on mQ 8 2 6 8 Ves V GC96340 Ves 10V 50 60 90 120 lo ky STB80NF55 06 1 STP80NF55 06 STP80NF55 06FP Gate Charge vs Gate source Voltage GC96350 0 50 100 150 200 Qs nC Normalized Gate Threshold Voltage vs Temperature 6C96370 Ves th norm Vos Ves nS In22504A 1 0 0 8 0 6 0 4 50 0 50 100 TuCC Source drain Diode Forward Characteristics GC96390 Vso V 1 1 Tj 55 C 0 9 ZEG 0 7 0 5 175 C 0 20 40 60 80 Iso A Capacitance Variations GC96360 4000 2000 0 10 20 30 40 Vos V Normalized on Resistance vs Temperature 6C96380 Ros on norm Vesz 10V Ip2 40A 2 0 0 5 0 0 50 0 50 100 TI C Normalized Breakdown Voltage Temperature GC96400 V BR DSS norm 1 2 1 1
4. pF Coss Output Capacitance 1020 pF Gia Reverse Transfer 350 pF Capacitance 2 12 ky STB80NF55 06 1 STP80NF55 06 STP80NF55 06FP ELECTRICAL CHARACTERISTICS continued SWITCHING ON Symbol Parameter Test Conditions Max Unit ta on Turn on Delay Time Vpp 27 V ID 40A ns tr Rise Time RG 4 7Q Ves 10V ns Resistive Load Figure 3 Qg Total Gate Charge Vpp 44 V Ip 80 A Vas 10V 193 nC Qgs Gate Source Charge nC Qga Gate Drain Charge nC Resistive Load Figure 3 Parameter Test Conditions Parameter Test Conditions Unit Turn off Delay Time Voo 27 V ID 40 A ns Fall Time Re 4 7Q Ves 10V ns Source drain Current Source drain Current pulsed Forward On Voltage Isp 80A trr Reverse Recovery Time Isp 80 A di dt 100A us ns Arr Reverse Recovery Charge Von 35V Tj 150 C uc IRRM Reverse Recovery Current see test circuit Figure 5 A Pulsed Pulse duration
5. 4 4 4 6 0 173 0 181 A1 2 49 2 69 0 098 0 106 A2 0 03 0 23 0 001 0 009 B 0 7 0 93 0 028 0 037 B2 1 14 1 7 0 045 0 067 C 0 45 0 6 0 018 0 024 C2 1 21 0 048 0 054 D 8 95 9 35 0 352 0 368 D1 8 0 315 E 10 10 4 0 394 0 409 E1 8 5 0 334 G 4 88 5 28 0 192 0 208 L 15 15 85 0 591 0 624 L2 1 27 1 4 0 050 0 055 M 2 4 3 2 0 094 0 126 V2 0 8 0 8 L5 4 7 12 STB80NF55 06 1 STP80NF55 06 STP80NF55 06FP TO 262 IZPAK MECHANICAL DATA DIM mm inch MIN TYP MAX MIN MAX E PO11P5 E 8 12 ky STB80NF55 06 1 STP80NF55 06 STP80NF55 06FP TO 220 MECHANICAL DATA mm inch DIM MIN TYP MAX MIN TYP TYP A 4 4 4 6 0 181 C 1 23 1 32 0 048 0 051 D 2 40 2 72 0 107 E 0 49 0 70 0 019 0 027 F 0 61 0 88 0 034 F1 1 14 1 70 0 044 0 067 F2 1 14 0 044 0 067 G 4 95 5 15 0 194 0 203 H2 10 10 40 0 393 0 409 L2 16 40 0 645 L3 28 90 1 137 L4 13 14 0 551 L5 2 65 2 95 0 104 0 116 L7 6 20 6 60 0 244 0 260 DIA 3 75 3 85 0 147 0 151 DIA 9 12 STB80NF55 06 1 STP80NF55 06 STP80NF55 06FP TO 220FP MECHANICAL DATA L2 L4 3 10 12 STB80NF55 06 1 STP80NF55 06
6. Ky STB80NF55 06 STB80NF55 06 1 STP80NF55 06 STP80NF55 06FP N CHANNEL 55V 0 005 Q 80A TO 220 TO 220FP FPAK D PAK STripFET POWER MOSFET TO 220FP 4 TYPE Rps on STB80NF55 06 1 0 0065 Q STP80NF55 06 0 0065 Q STP80NF55 06FP 0 0065 Q TYPICAL Rps on 0 005 Q a EXCEPTIONAL dv dt CAPABILITY a 100 AVALANCHE TESTED u APPLICATION ORIENTED CHARACTERIZATION SURFACE MOUNTING D2PAK TO 263 POWER PACKAGE IN TUBE NO SUFFIX OR IN TAPE 8 REEL SUFFIX T4 3 2 Suffix 1 Suffix T4 DESCRIPTION This Power MOSFET is the latest development of INTERNAL SCHEMATIC DIAGRAM STMicroelectronis unique Single Feature Size strip based process The resulting transistor D TAB or 2 shows extremely high packing density for low on resistance rugged avalanche characteristics and less critical alignment steps therefore a remark able manufacturing reproducibility 6 1 APPLICATIONS HIGH EFFICIENCY DC DC CONVERTERS UPS AND MOTOR CONTROL sis DC DC CONVERTERS 5608440 u AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Parameter TB80NF55 06 1 STP80NF55 06 Drain source Voltage Vas 0 Drain gate Voltage Ras 20 kQ Gate source Voltage Drain Current continuous at Ic 25 Drain Current continuous at Ic 100 Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Insulation Withstand Vo
7. STP80NF55 06FP D2PAK FOOTPRINT TUBE SHIPMENT no suffix 0 75 40 1 ie BASE QTY 50 12 20 s 5 08 1000 CJE 1 60 L e Tube length 532 0 5 apen j All dimensions 975 All dimensions 051202 Stein millimeters are in millimeters TAPE AND REEL SHIPMENT suffix T4 REEL MECHANICAL DATA 40 mm min i Access hole A at slot location Tape slot G measured 30 4 1 197 in core for at hub tape start 25mm min BASE QTY BULK QTY wen 1000 1000 Y TAPE MECHANICAL DATA DIM AO pa m 10 pitches cumulative 8S 0 1 r 7 i tolerance on tape D TOP COVER h Di TAPE 0 56 66 6 6 4 E Bo d j S E 0 E pom EN KO res AW Pi Center line PO of cavity P1 User Direction of Feed P2 TRL R 000000000 T R min Ww FEED DIRECTION Bending radius on sales type TA 11 12 STB80NF55 06 1 STP80NF55 06 STP80NF55 06FP Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication are subject to chang
8. e without notice This publication supersedes and replaces all information previously supplied STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics The ST logo is registered trademark of STMicroelectronics All other names are the property of their respective owners 2004 STMicroelectronics All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States www st com Q 12 12
9. ltage DC Storage Temperature Operating Junction Temperature e Pulse width limited by safe operating area 1 Isp 80A di dt x400A us Vpp lt V BR pss Tj Tumax 2 Starting Tj 25 C Ip 40A Vpp 35V 55 to 175 o Oo February 2004 1 12 NEW DATASHEET ACCORDING TO PCN DSG CT 2C13 MARKING P80NF55 06 B80NF55 06 P80NF55 06 STB80NF55 06 1 STP80NF55 06 STP80NF55 06FP THERMAL DATA D2PAK I2PAK TO 220 TO 220FP Rthj case Thermal Resistance Junction case Max 0 5 3 33 C W Rthj amb Thermal Resistance Junction ambient Max 62 5 C W Ti Maximum Lead Temperature For Soldering Purpose 300 C ELECTRICAL CHARACTERISTICS Tease 25 C unless otherwise specified OFF Symbol Parameter Test Conditions Min Typ Max Unit Drain source Ip 250 pA Ves 0 V BR DSS Breakdown Voltage 99 Y Ipss Zero Gate Voltage Vps Max Rating 1 uA Drain Current Vas 0 Vps Max Rating Tc 125 C 10 pA Gate body Leakage Vas 20 V 100 nA G99 Current Vps 0 ON Symbol Parameter Test Conditions Min Typ Max Unit Vasith Gate Threshold Voltage Vps Vas Ip 250 A 2 3 4 V Rps on Static Drain source On Vas 10V Ip 40A 0 005 0 0065 Q Resistance DYNAMIC Symbol Parameter Test Conditions Min Typ Max Unit gts Forward Transconductance Vpss2 15V ID 40A 150 S Ciss Input Capacitance Vps 25V f 1 MHz Vas 0 4400
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ST STB80NF55 06 STB80NF55 06 1 STP80NF55 06 STP80NF55 06FP handbook