VISHAY SEMICONDUCTOR BAS16-V Vishay Semiconductors Small Signal Fast Switching Diode handbook
Contents
1. 28 0 110 5 S S S ce 4 4 rs S E ES 2o Lo 9 T NIO Y eI y 2 6 0 102 0 45 0 018 0 45 0 018 0 35 0 014 0 35 0 014 foot print recommendation 0 7 0 028 0 45 0 018 1 20 0 047 1 0 039 1 0 039 0 9 0 035 0 9 0 035 0 95 0 037 i s ap s Document no 6 541 5014 01 4 Rev 6 Date 08 July 2004 17418 www vishay com Document Number 85539 3 Rev 1 5 09 Mar 06 BAS16 V Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1 Meet all present and future national and international statutory requirements 2 Regularly and continuously improve the performance of our products processes distribution and operating systems with respect to their impact on the health and safety of our employees and the public as well as their impact on the environment It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ODSs The Montreal Protocol 1987 and its London Amendments 1990 intend to severely restrict the use of ODSs and forbid their use within the next ten years Various national and international initiatives are pressing for an earlier ban on these substances Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to2. BAS16 V Vishay Semiconductors Gy VISHAY Small Signal Fast Switching Diode Features by Silicon Epitaxial Planar Diode Ultra fast switching speed Surface mount package ideally suited for automatic insertion High conductance Lead Pb free component Component in accordance to RoHS 2002 95 EC and WEEE 2002 96 EC Mechanical Data Case SOT23 Plastic case Weight approx 8 0 mg Polarity cathode band Packaging Codes Options GS18 10 k per 13 reel 8 mm tape 10 k box GS08 3 k per 7 reel 8 mm tape 15 k box Parts Table Part Ordering code Marking Remarks BAS16 V BAS16 V GS18 or BAS16 V GS08 A6 Tape and Reel Absolute Maximum Ratings Tamb 25 C unless otherwise specified Parameter Test condition Symbol Value Unit Non repetitive peak reverse VRM 100 V voltage Repetitive peak reverse voltage VnnM VnwM Vn 75 V Working peak reverse voltage DC Blocking voltage Peak forward surge current tp 1s lesm 1 A tp 1 us lesm 2 A Average forward current half wave rectification with lFav 150 mA resistive load and f 2 50 MHz on ceramic substrate 8 mm x10 mm x 0 7 mm Forward current on ceramic substrate lE 300 mA 8 mm x 10 mm x 0 7 mm Power dissipation on ceramic substrate Prot 350 mW 8 mm x 10 mm x 0 7 mm Document Number 85539 www vishay com Rev 1 5 09 Mar 06 1 BAS16 V Vishay Semiconducto
3. eliminate the use of ODSs listed in the following documents 1 Annex A B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 Class and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency EPA in the USA 3 Council Decision 88 540 EEC and 91 690 EEC Annex A B and C transitional substances respectively Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances We reserve the right to make changes to improve technical design and may do so without further notice Parameters can vary in different applications All operating parameters must be validated for each customer application by the customer Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application the buyer shall indemnify Vishay Semiconductors against all claims costs damages and expenses arising out of directly or indirectly any claim of personal damage injury or death associated with such unintended or unauthorized use Vishay Semiconductor GmbH P O B 3535 D 74025 Heilbronn Germany www vishay com Document Number 85539 4 Rev 1 5 09 Mar 06 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice Vishay Intertechnology Inc or anyone on its beha
4. lf assumes no responsibility or liability for any errors or inaccuracies Information contained herein is intended to provide a product description only No license express or implied by estoppel or otherwise to any intellectual property rights is granted by this document Except as provided in Vishay s terms and conditions of sale for such products Vishay assumes no liability whatsoever and disclaims any express or implied warranty relating to sale and or use of Vishay products including liability or warranties relating to fitness for a particular purpose merchantability or infringement of any patent copyright or other intellectual property right The products shown herein are not designed for use in medical life saving or life sustaining applications Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale Document Number 91000 www vishay com Revision 08 Apr 05 1
5. rs Thermal Characteristics Tamb 25 C unless otherwise specified Parameter Test condition Symbol Value Unit Junction ambient on ceramic substrate RihJA 357 K W 8 mm x 10 mm x 0 7 mm Junction and storage Tj Tstg 55 to 150 C temperature range Electrical Characteristics Tamp 25 C unless otherwise specified Parameter Test condition Symbol Min Typ Max Unit Forward voltage IF 1 mA Ve 715 mV lp 10 mA VE 855 mV lE 50 mA VE 1 V lp 150 mA VE 1 25 V Reverse current VR 75V In 1 HA Vn 75 V T 150 C In 50 pA Vn 25 V T 150 C In 30 uA Diode capacitance Vp 0 f 1 MHz Cp 4 pF Reverse recovery time lp 10 mA to ln 1 mA trr ns VR 6V R 21000 Typical Characteristics Tamp 25 C unless otherwise specified 1000 10000 T a100 1000 E Tj 100 C m 9 10 E i 25 C g 100 P o A l 10 i 01 x 0 01 1 0 0 2 0 4 0 6 0 8 1 0 1 2 1 4 1 6 1 8 2 0 0 25 50 75 100 125 150 175 200 14356 Vr Forward Voltage V 14357 Tj Junction Temperature C Figure 1 Forward Current vs Forward Voltage Figure 2 Reverse Current vs Junction Temperature www vishay com 2 Document Number 85539 Rev 1 5 09 Mar 06 BAS16 V Vishay Semiconductors Gy VISHAY Package Dimensions in mm Inches x 19 3 1 0 122 S Fp I
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VISHAY SEMICONDUCTOR BAS16 V Vishay Semiconductors Small Signal Fast Switching Diode handbook