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VISHAY ILD205T/206T/207T/211T/213T/217T Manual

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1. Package Dimensions in Inches mm 120 002 3 05 05 EZR 010 13 CA 1543 002 050 1 mE Z ou 36 3 91 05 ZA E2 1036 91 170 4 32 1 045 1 14 J L 260 6 5 Pin One I D 016 41 7 015 002 40 SS 230 002 384 05 qu 5 84 05 x ISO Method A ERE 004 10 Po 125 002 008 20 008 20 4 3 18 05 i i y de 050 1 27 Typ y R 010 040 1 02 020 004 25 Max Lead coplanarity 514 10 001 Max 1178020 2 Plcs www vishay com Document Number 83647 6 Rev 1 4 26 Oct 04 ILD205T 206T 207T 211T 213T 217T Vishay Semiconductors WV VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1 Meet all present and future national and international statutory requirements 2 Regularly and continuously improve the performance of our products processes distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public as well as their impact on the environment It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ODSs The Montreal Protocol 1987 and its London Amendments 1990 intend to severely restrict the use of ODSs and forbid their use within the next ten years Various national and international initiatives are pressin
2. Parameter Test condition Symbol Value Unit Total package dissipation Piot 300 mW ambient 2 LEDs 2 detectors 2 channels Derate linearly from 25 C 4 0 mW C Storage temperature Tstg 55 to 150 C Operating temperature Tamb 55 to 100 C Soldering time from 260 C Taid 10 sec Electrical Characteristics Tamb 25 C unless otherwise specified Minimum and maximum values are testing requirements Typical values are characteristics of the device and are the result of engineering evaluation Typical values are for information only and are not part of the testing requirements Input Parameter Test condition Symbol Min Typ Max Unit Forward voltage lp 10 mA Ve 1 2 1 55 V Reverse current VR 6 0V IR 0 1 100 uA Capacitance VR 0 Co 25 pF www vishay com Document Number 83647 2 Rev 1 4 26 Oct 04 Vishay Semiconductors Output Parameter Test condition Symbol Min Typ Max Unit Collector emitter breakdown lc 10 pA BVcEo 70 V voltage Emitter collector breakdown lg 10 pA BVeco 7 0 V voltage Collector emitter leakage Vcg 10V Ip 0 IcEO 5 0 50 nA current Collector emitter capacitance Vcg 0 Cce 10 pF Coupler Parameter Test condition Symbol Min Typ Max Unit Collector emitter saturation lp 10 mA Ig 2 2 5 mA VcE sat 0 4 V voltage Capacitance input output Cio 0 5 pF Isolation test voltage t 1 0 se
3. WV VISHAY ILD205T 206T 207T 211T 213T 217T Vishay Semiconductors Optocoupler Phototransistor Output Dual Channel SOIC 8 package Features Two Channel Coupler e SOIC 8A Surface Mountable Package e Standard Lead Spacing of 05 Available only on Tape and Reel Option Con forms to EIA Standard 481 2 Isolation Test Voltage 3000 Vans Compatible with Dual Wave Vapor Phase and IR Reflow Soldering Lead free component Component in accordance to RoHS 2002 95 EC and WEEE 2002 96 EC Agency Approvals UL1577 File No E52744 System Code Y Description The ILD205T 206T 207T 211T 213T 217T are optically coupled pairs with a Gallium Arsenide infra red LED and a silicon NPN phototransistor Signal information including a DC level can be transmitted by the device while maintaining a high degree of elec trical isolation between input and output The ILD205T 206T 207T 211T 213T 217T come in a standard SOIC 8A small outline package for surface mounting which makes it ideally suited for high den sity applications with limited space In addition to elim inating through holes requirements this package conforms to standards for surface mounted devices A1 8C Vx q C2 7E A3 6C Y C4 4 5E A specified minimum and maximum CTR allows a narrow tolerance in the electrical design of the adja cent circuits The high BVcgo of 70 V gives a higher safety margin compared to the indust
4. c Viso 3000 VRMS Resistance input to output Rio 100 GQ Current Transfer Ratio Parameter Test condition Part Symbol Min Typ Max Unit DC Current Transfer Ratio Vcg 5 0 V lp 10 mA ILD205T CTRpc 40 80 ILD206T CTRpc 63 125 ILD207T CTRpc 100 200 ILD211T CTRpc 20 ILD213T CTRpc 100 Yo Vcg 5 0 V lp 1 0 mA ILD205T CTRpc 13 30 ILD206T CTRpc 22 45 ILD207T CTRpc 34 70 ILD217T CTRpc 100 120 Document Number 83647 www vishay com Rev 1 4 26 Oct 04 3 ILD205T 206T 207T 211T 213T 217T Vishay Semiconductors Switching Characteristics Parameter Test condition Symbol Min Typ Max Unit Turn on time lc 2 0 mA R 100 9 ton 5 0 us Vcc 5 0 V Turn off time lc 2 0 mA R 100 9 lor 4 0 us Vcc 5 0 V Typical Characteristics Tamb 25 C unless otherwise specified T E t 2 5 o a Ww 0 6 0 8 1 0 1 2 1 4 ilda05t 01 Vf LED Forward Voltage V Figure 1 Forward Current vs Forward Voltage 1 2 E Coll current normalized Ip 10 mA O If 10 mA o z 08 2 S 06 E If 5 mA S 0 4 E o 0 2 IF 1 mA 2 Z o0 0 2 4 6 8 10 12 VceE Collector to Emitter Voltage V iild205t 02 Figure 2 Collector Emitter Current vs Temperature NCTRce Normalized CTRce iild205t 03 NCTRce normalized CTRce iil
5. ct 04 7 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice Vishay Intertechnology Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies Information contained herein is intended to provide a product description only No license express or implied by estoppel or otherwise to any intellectual property rights is granted by this document Except as provided in Vishay s terms and conditions of sale for such products Vishay assumes no liability whatsoever and disclaims any express or implied warranty relating to sale and or use of Vishay products including liability or warranties relating to fitness for a particular purpose merchantability or infringement of any patent copyright or other intellectual property right The products shown herein are not designed for use in medical life saving or life sustaining applications Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale Document Number 91000 www vishay com Revision 08 Apr 05 1
6. d205t 04 CTR normalized 7 lp 10 mA 01 Al 1 10 100 If LED Current mA Figure 3 Normalized CTR e vs Forward Current CTR nonsat normalized lf 1 OmA Vce 10 V 20 40 60 80 100 TA Temperature C Figure 4 Current Transfer Ratio normalized vs Ambient Temperature www vishay com 4 Document Number 83647 Rev 1 4 26 Oct 04 ILD205T 206T 207T 211T 213T 217T Vishay Semiconductors 103 200n If 10 mA JAN B Total pkg Pulse width 100 ms 1 c T Duty cycle 50 Pd Toff 2 150 2 x 10 v 2 3 E o O 100 o Ka Ton 5 10 E H a 50 per channel 3 S 100 ao 0 G a 4 1 10 100 25 50 75 100 125 RI Load Resistor KQ TA Ambient Temperature C iild205t_01 iild205t_07 Figure 5 Switching Speed vs Load Resistor Figure 7 Power Dissipation vs Ambient Temperature Iceo Leakage Current ua ild2o5t o6 Ta Temperature C Figure 6 Collector Current vs Ambient Temperature Input NN I ton toft Voc 5 V pon Lx todotf Input NN t Lapel t o RLS VouT Output td f r R 10 o 50 i 90 Figure 8 Switching Test Circuit Document Number 83647 www vishay com Rev 1 4 26 Oct 04 5 ILD205T 206T 207T 211T 213T 217T Vishay Semiconductors
7. g for an earlier ban on these substances Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents 1 Annex A B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 Class and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency EPA in the USA 3 Council Decision 88 540 EEC and 91 690 EEC Annex A B and C transitional substances respectively Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances We reserve the right to make changes to improve technical design and may do so without further notice Parameters can vary in different applications All operating parameters must be validated for each customer application by the customer Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application the buyer shall indemnify Vishay Semiconductors against all claims costs damages and expenses arising out of directly or indirectly any claim of personal damage injury or death associated with such unintended or unauthorized use Vishay Semiconductor GmbH P O B 3535 D 74025 Heilbronn Germany Telephone 49 0 7131 67 2831 Fax number 49 0 7131 67 2423 Document Number 83647 www vishay com Rev 1 4 26 O
8. ry standard of 30 V Order Information Part Remarks ILD205T CTR 40 80 6 SOIC 8 ILD206T CTR 63 125 SOIC 8 ILD207T CTR 100 200 SOIC 8 ILD211T CTR gt 20 SOIC 8 ILD213T CTR gt 100 SOIC 8 ILD217T CTR gt 100 SOIC 8 For additional information on the available options refer to Option Information Document Number 83647 Rev 1 4 26 Oct 04 www vishay com 4 ILD205T 206T 207T 211T 213T 217T Vishay Semiconductors Absolute Maximum Ratings Tamp 25 C unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability Input Parameter Test condition Symbol Value Unit Peak reverse voltage VR 6 0 V Peak pulsed current 1 0 us 300 pps 1 0 A Continuous forward current per 30 mA channel Power dissipation Pdiss 50 mW Derate linearly from 25 C 0 66 mW C Output Parameter Test condition Symbol Value Unit Collector emitter breakdown voltage BVcEo 70 V Emitter collector breakdown voltage BVeco 7 0 V Power dissipation per channel Paiss 125 mW Derate linearly from 25 C 1 67 mW C Coupler

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