MAXIM MAX2601/MAX2602 handbook
Contents
1. Figure 1 Test Circuit Detailed Description MAX2601 MAX2602 The MAX2601 MAX2602 are high performance silicon bipolar transistors in power enhanced 8 pin SO pack ages The base and collector connections use two pins each to reduce series inductance The emitter connects to three MAX2602 or four MAX2601 pins in addition to a back side heat slug which solders directly to the PC board ground to reduce emitter inductance and improve thermal dissipation The transistors are intend ed to be used in the common emitter configuration for maximum power gain and power added efficiency Current Mirror Bias MAX2602 only The MAX2602 includes a high performance silicon bipolar RF power transistor and a thermally matched biasing diode that matches the power transistor s ther mal and process characteristics This diode is used to create a bias network that accurately controls the power transistor s collector current as the temperature changes Figure 2 The biasing diode is a scaled version of the power tran sistor s base emitter junction in such a way that the current through the biasing diode is 1 15 the quiescent collector current of the RF power transistor Supplying the biasing diode with a constant current source and connecting the diode s anode to the RF power transis tors base ensures that the RF power transistor s quies cent collector current remains constant through 4 Figure 2 Bias Diode Application2. temperature variations Simply tying the biasing diode to the supply through a resistor is adequate in most sit uations If large supply variations are anticipated con nect the biasing diode to a reference voltage through a resistor or use a stable current source Connect the biasing diode to the base of the RF power transistor through a large RF impedance such as an RF choke inductor and decouple to ground through a surface mount chip capacitor larger than 1000pF MAXIM 3 6V 1W RF Power Transistors Applications Information Optimum Port Impedance The source and load impedances presented to the MAX2601 MAX2602 have a direct impact upon its gain output power and linearity Proper source and load terminating impedances Zs and ZL presented to the power transistor base and collector will ensure optimum performance For a power transistor simply applying the conjugate of the transistor s input and output impedances calculated from small signal S parameters will yield less than opti mum device performance For maximum efficiency at VBB 0 75V and Vcc 3 6V the optimum power transistor source and load impedances as defined in Figure 3 are At836MHz Zs 5 5 j2 0 ZL 6 5 j1 5 At 433MHz Zs 9 5 j2 5 ZL 8 5 j1 5 Zs and ZL reflect the impedances that should be pre sented to the transistor s base and collector The pack age parasitics are dominated by inductance as shown in Figure 3 and need to b
3. C SOIC derate 80mW C above 70 C Note 1 6 4W Note 1 Backside slug must be properly soldered to ground plane see Slug Layout Techniques section Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied Exposure to absolute maximum rating conditions for extended periods may affect device reliability DC ELECTRICAL CHARACTERISTICS TA Tmin to Tmax unless otherwise noted PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Collector Emitter Breakdown BVCEO Open base 15 Voltage Biles oO Shorted base 15 j a oe Sustaining Wits C 200mA 50 V S add Breakdown BVcBo Ic lt 100pA emitter open 15 v DC Current Gain hFE C 250mA Vce 3V 100 Collector Cutoff Current ICES Vce 6V VBE OV 0 05 1 5 pA Output Capacitance CoB VcB 3V lg OmA f 1MHz 9 6 pF AC ELECTRICAL CHARACTERISTICS Test Circuit of Figure 1 Vcc 3 6V Vgs 0 750V ZLOAD ZSOURCE 502 PouT 30dBm erwise noted f 8386MHz Ta 25 C unless oth PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Frequency Range f Note 2 DC 1 GHz Base Current IB 4 2 mA Vcc 3 6V P 30dBm 43 Harmonics 2fo 3fo oe O
4. JT dBc Vcc 3 0V PouT 29dBm 42 Power Gain PouT 30dBm 11 6 dB Collector Efficiency n No modulation 58 Stability under Continuous _ i Load Mismatch Conditions Vswr Voc 55V all angles Note 3 el IM3 PouT 30dBm total power f1 835MHz 16 Two Tone IMR M5 f2 836MHz 35 dBc Noise Figure NF Ves 0 9V 3 3 dB Note 2 Guaranteed by design Note 3 Under these conditions a no spurious oscillations shall be observed at collector greater than 60dBc b no parametric degradation is observable when mismatch is removed and c no current draw in excess of the package dissipation capability is observed MAXIM 3 6V 1W RF Power Transistors for 900MHz Applications a _Typical Operating Characteristics Test Circuit of Figure 1 input output matching networks optimized for specific measurement frequency Vcc 3 6V VBB 0 750V Pout 30dBm ZLOAD ZSOURCE 50Q f 836MHz TA 25 C unless otherwise noted Icc A TWO TONE OUTPUT POWER AND IM3 TWO TONE OUTPUT POWER IM3 IM5 COLLECTOR CURRENT vs COLLECTOR CURRENT vs INPUT POWER 1 0 z 31 a 20 35 2 5 Pour IM3 AND IM5 5 Pour IM3 AND IM5 z 3 ARE RMS COMPOSITE ARE RMS COMPOSITE 0 8 2 TWO TONE POWER LEVELS Pour z TWO TONE POWER
5. PIN PACKAGE power amplifiers Furthermore a drain switch is not o o required to turn off the MAX2601 MAX2602 This Axson a o increases operating time in two ways it allows lower MAX2602E9A 10 C to 85 C 8 SOIC system end of life battery voltage and it eliminates the wasted power from a drain switch device The MAX2601 MAX2602 are available in thermally enhanced 8 pin SO packages which are screened to the extended temperature range 40 C to 85 C Applications Pin Configurations Narrow Band PCS NPCS 915MHz ISM Transmitters TOP VIEW Microcellular GSM Power Class 5 AMPS Cellular Phones Digital Cellular Phones Two Way Paging Land Mobile Radios PSOPII PSOPII Typical Application Circuit appears at end of data sheet MIAXAI VI Maxim Integrated Products 1 For pricing delivery and ordering information please contact Maxim Direct at 1 888 629 4642 or visit Maxim s website at www maxim ic com CO9STXVIN LO9SCXVIN MAX2601 MAX2602 3 6V 1W RF Power Transistors for 900MHz Applications ABSOLUTE MAXIMUM RATINGS Collector Emitter Voltage Shorted Base VcEs Emitter Base Reverse Voltage VEBO 008 BIAS Diode Reverse Breakdown Voltage MAX2602 2 3V si E E 2 3V anaE 17V Operating Temperature Range Storage Temperature Range Junction Temperature Lead Temperature soldering 10s Average Collector Current IC 1200mA Continuous Power Dissipation Ta 70
6. e accounted for when calcu lating Zs and ZL The internal bond and package inductances shown in Figure 3 should be included as part of the end application matching network depending upon exact layout topology MAXIM for 900MHz Applications Slug Layout Techniques The most important connection to make to the MAX2601 MAX2602 is the back side It should connect directly to the PC board ground plane if it is on the top side or through numerous plated through holes if the ground plane is buried For maximum gain this con nection should have very little self inductance Since it is also the thermal path for heat dissipation it must have low thermal impedance and the ground plane should be large MAXIM MAX2601 MAX2602 Figure 3 Optimum Port Impedance Package Information For the latest package outline information and land patterns go to www maxim ic com packages DOCUMENT NO 21 0041 PACKAGE TYPE 8 SOIC PACKAGE CODE S8E 12 CO9SXVIN LO9SCXVIN 3 6V 1W RF Power Transistors for 900MHz Applications Revision History REVISION REVISION PAGES NUMBER DATE DESCRIPTION CHANGED 2 5 97 a 3 9 08 Removed die version from Ordering Information 1 MAX2601 MAX2602 Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product No circuit patent licenses are implied Maxim reserves the right to change the circuitry and specifica
7. l 30 19 95 LEVELS amp 0 6 S 29 1 os i5 3 0 4 IM3 T 28 T 5 0 2 0 27 16 5 0 2 3 4 5 6 0 4 0 5 6 07 0 8 0 25 Voe V Icc A INPUT POWER dBm TWO TONE OUTPUT POWER IM3 IM5 ACPR vs OUTPUT POWER COLLECTOR EFFICIENCY vs OUTPUT POWER vs INPUT POWER f 433MHz IS 54 2 4 DOPSK MODULATION Vpp 0 85V IS 54 1 4 DOPSK MODULATION Vpp 0 85V 35 20 8 60 s a 29 Pour IM3 AND IM5 8 sg L ARERMS COMPOSITE 25 a TWO TONE POWER 26 Pp LEVELS 30V 2 Pour IM3 AND IM5 T g z ARE RMS COMPOSITE 5 5 es 15 TWO TONE 30 30 3 6V POWER LEVELS 2 y 2 34 20 5 36 10 38 5 40 0 5 10 15 20 25 10 15 20 25 30 35 10 15 20 25 30 35 INPUT POWER dBm OUTPUT POWER dBm OUTPUT POWER dBm S Pin Description PIN NAME FUNCTION MAX2601 MAX2602 1 8 1 8 C Transistor Collector 2 3 6 7 Slug 2 6 7 Slug E Transistor Emitter Anode of the Biasing Diode that matches the thermal and process char acteristics of the power transistor Requires a high RF impedance low 3 BIAS DC impedance e g inductor connection to the transistor base Pin 4 Current through the biasing diode into Pin 3 is proportional to 1 15 the collector current in the transistor 4 5 4 5 B Transistor Base MAXIM 3 CTO9ZXVYNW LO9SZXVIN MAX2601 MAX2602 3 6V 1W RF Power Transistors for 900MHz Applications 5Q L1 COILCRAFT A0ST INDUCTOR 18 5nH T1 T2 1 50 TRANSMISSION LINE ON FR 4
8. oo SA AXISYI EVA AV 3 6V 1W RF Power Transistors for 900MHz Applications General Description __ __Features The MAX2601 MAX2602 are RF power transistors opti Low Voltage Operates from 1 Li lon or mized for use in portable cellular and wireless equipment 3 NiCd NiMH Batteries that operates from three NiCd NiMH cells or one Li lon cell These transistors deliver 1W of RF power from a DC to Microwave Operating Range 3 6V supply with efficiency of 58 when biased for con stant envelope applications e g FM or FSK For NADC 1W Output Power at 900MHz IS 54 operation they deliver 29dBm with 28dBc ACPR DORAS 2 3 from a 4 8V supply On Chip Diode for Accurate Biasing MAX2602 The MAX2601 is a high performance silicon bipolar RF Low Cost Silicon Bipolar Technology power transistor The MAX2602 includes a high performance silicon bipolar RF power transistor and a Does Not Require Negative Bias or Supply Switch biasing diode that matches the thermal and process i on characteristics of the power transistor This diode is High Efficiency 58 used to create a bias network that accurately controls the power transistor s collector current as the tempera ture changes The MAX2601 MAX2602 can be used as the final stage in a discrete or module power amplifier Silicon bipolar Ordering Information technology eliminates the need for voltage inverters and sequencing circuitry as required by GaAsFET TEMP RANGE
9. tions without notice at any time 6 Maxim Integrated Products 120 San Gabriel Drive Sunnyvale CA 94086 408 737 7600 2008 Maxim Integrated Products Maxim is a registered trademark of Maxim Integrated Products Inc
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MAXIM MAX2601/MAX2602 handbook