TOSHIBA TLP813 handbook
Contents
1. If Ta 80 5 22 Qa sa z o a e a 40 5 55 2 10 25 20 ee lt ZA a lt 0 0 20 40 60 80 100 AMBIENT TEMPERATURE C AMBIENT TEMPERATURE Ip V TYP i Ic I 50 25 0 5 A Y 5 z 52 Vor 0 4V SAMPLE 3 7 F 3 AYA tes AAT SAMPLE 2 2 5010 gt 7 1 SAMPLE 1 8 5 2 5 75 9 05 2 3 50 fr 3 25 Ps JA 9 25 2 gt 1 2 lA 0 8 0 9 1 0 11 12 13 14 i FORWARD VOLTAGE Vp V 0 05 Ta TYP 0 06 2 5 j 19 0 01 24 0 5 1 5 10 80 50 100 2 tg FORWARD CURRENT Ip mA gt Ic Ip If a 107 A 30 E Ta 25 C 5 5 SAMPLE 3 VcE 0 4V 8 2 10 4 5 10 D Z Ae x Za lt SAMPLE 2 mo 5 lt 4 p 2 107 a 3 SAMPLE 1 2 107 1 0 20 40 60 80 100 120 140 1 3 5 10 30 50 100 AMBIENT TEMPERATURE Ta 0 FORWARD CURRENT Ip mA 1997 122. 10 4 6 TOSHIBA Ic VCE TYP 5 0 Ta 25 C a 50 E 4 0 40 E 8 30 5 5 2 0 2 20 2 1 1 0 Ip 10mA 0 0 1 2 3 4 5 COLLECTOR EMITTER VOLTAGE VCE V 1 RELATIVE Ic Ta TYP E 8 1 2 8 10 5 a 08 gt 1 06 5 5 a 0 4 Ip 20mA Ip 5mA 240 20 0 20 40 60 80 AMBIENT TEMPERATURE C 100 SWITCHING TIME TEST CIRCUIT SWITCHING TIME ss SWITCHING TIME ys TLP813 SWITCHING CHARACTERISTICS NON SATURATED OPERATION TYP Ta 25 C ty tf 800 REPETITIVE FREQUENCY 1kHz DUTY 1 2 5 100 1 500 30 tq ts 0 1 0 3 1 3 10 30 LOAD RESISTANCE Ry kQ SWITCHING CHARACTERISTICS SATURATED OPERATION Ta 25 C 5 Ip 20mA VouT24 6V 1 3 10 30 100 300 LOAD RESISTANCE Ry kQ 1997 12 10 5 6 TOSHIBA TLP813 DETECTING POSITION DETECTING CHARACTERISTICS 1 CHARACTERISTICS 2 Ip 20mA 5 Ta 25 C SITUTTER RELATIVE C
3. OLLECTOR CURRENT RELATIVE COLLECTOR CURRENT d 12 1 4 7 6 1 8 8 0 82 8 4 DISTANCE 4 mm DISTANCE d mm VCE sat Ta TYP 0 20 0 18 a is VOLTAGE V COLLECTOR EMITTER SATURATION 40 20 0 20 40 60 80 100 AMBIENT TEMPERATURE C 1997 12 10 6 6
4. TOSHIBA TLP813 TOSHIBA PHOTOINTERRUPTER INFRARED LED PHOTOTRANSISTOR TLP813 IMAGE SCANNER HANDY COPY COPYING MACHINE FACSIMILE PHOTOELECTRIC TYPE COUNTER FOR DETECTING VARIOUS SUBSTANCES The TLP813 is a PWB direct mounting type photointerrupter with an GaAs infrared LED and a Si phototransistor incorporated In an application to get reference pulses in combination with a rotating disk the detection slit width as narrow as 0 2mm allows to make the slit pitch narrow and get many pulses per rotation Because of the oblong detection slit this photo transistor is best suited to the upward down ward position detection Printed wiring board direct mounting type with a locating pin e Gap 2 2mm High resolution Slit width 0 2X2 0mm the oblong slit Current transfer ratio I Ip 2 5 min The detector side is of visible light cut type MAXIMUM RATINGS Ta 25 C CHARACTERISTIC SYMBOL RATING UNIT A Reverse Voltage Collector Emitter Voltage Emitter Collector Voltage Collector Power Dissipation Derating Ta gt 25 C DETECTOR LED Unit in mm c 0 3 2 54403 LEAD DIMENSIONS ARE H EACH INDICATED WIT LEAD ROOTS TOSHIBA 11 11B1 Weight 0 9 typ PIN CONNECTION Collector Power Dissipation Po 75 mW gt l Collector Current C Operating Temperature Range 30 85 c Storage Temperature Range 40 100 Sold
5. ering Temperature 5s TOSHIBA is continually working to improve the quality and the reliability of its products Nevertheless semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress It is the responsibility of the buyer when utilizing TOSHIBA products to observe standards of safety and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss ND a 1 4 CATHODE ANODE EMITTER COLLECTOR of human life bodily injury or damage to property In developing your designs please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications Also please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook 1997 12 10 1 6 TOSHIBA TLP813 OPTO ELECTRICAL CHARACTERISTICS Ta 25 C CHARACTERISTIC SYMBOL TEST CONDITION MIN a aa e aD 5 Ps a Peak Emission p a paw om Peak Sensitivity oo Current Transfer ratio Ic Ip 5 Irp 20mA 25 50 Collector Emitter Geter A a Rise Time Vo Ig 2mA Fan Time 1000 cee ae earl PRECAUTION Please be careful of the followings 1 If chemical are used for cleaning the soldered sur
6. face only shall be cleaned with chemicals avoiding the whole cleaning of the package 2 container is made of polycarbonate Polycarbonate is usually stable with acid alcohol and aliphatic hydrocarbons however with pertochemicals such as benzene toluene and acetone alkali aromatic hydrocarbons or chloric hydrocarbons polycarbonate becomes cracked swollen or melted Please take care when chosing a packaging material by referencing the table below lt Chemicals to avoid with polycarbonate gt PHENOMENON CHEMICALS A Little deterioration nitric acid low concentration hydrogen peroxide chlorine but staining acetic acid 70 or more e gasoline methyl ethyl ketone ehtyl acetate butyl acetate Cracked crazed or ethyl methacrylate ethyl ether MEK swollen acetone m amino alcohol carbon tetrachloride carbon disulfide trichloroethylene cresol thinners oil of turpentine triethanolamine TCP TBP concentrated sulfuric acid Melted benzene styrene acrylonitrile vinyl acetate Used as solvent ethylenediamine diethylenediamine methyl chloride tetrachloromethane dioxane 1 2 dichloroethane Decomposed e ammonia water p other alkali 3 TLP813 shall be mounted on an unwarped surface Gallium arsenide GaAs is a substance used in the products described in this document GaAs dust and fumes are toxic Do not break cut or pulverize the product use chemicals to dissolve t
7. hem When disposing of the products follow the appropriate regulations Do not dispose of the products with other industrial waste or with domestic garbage The products described in this document are subject to foreign exchange and foreign trade control laws The information contained herein is presented only as a guide for the applications of our products No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others The information contained herein is subject to change without notice 1997 12 10 2 6 TOSHIBA TLP813 PRODUCT INDICATION MODEL NAME MONTHLY PRODUCTION LOT 4 PRODUCTION MONTH JAN DEC ARE INDICATED BY ALPHABETES OF A L PRODUCTION YEAR LAST DIGIT OF A D IS INDICATED STAMP COLOR SILVER POSITIONING OF SHUTTER AND DEVICE To operate correctly make sure that the shutter and the device are positioned as shown in the figure below The shit pitch of the shutter must be set wider than the slit width of the device Determine the width taking the switching time into consideration UNIT IN mm SHUTTER SENSOR CENTER CROSS SECTION 1997 12 10 3 6 TOSHIBA TLP813
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TOSHIBA TLP813 handbook