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ST BZW06-5V8/376 BZW06-5V8B/376B handbook

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1. IR Tj IR Tj 25 C 5E 3 1E 3 VR VRM 1E 2 1E 1 1E 0 SS me 1E 1 i 25 50 75 100 125 150 BZW06 xx Fig 4b Capacitance versus reverse applied voltage for bidirectional types typical values C pF 10000 p Tj 25 C F F 1 MHz 4 BZWO06 5VsB ee a 1000 BZWoO6 13B LBZWO6 58B 100 2 06 171B V R V o 10 100 500 Fig 6 Transient thermal impedance junction ambi ent versus pulse duration For FR4 PC Board with L lead 10mm Zth j a C W 100 5 6 BZWO06 xx ORDER BZW 06 10 B RL qu PACKAGING Ammopack tape 600W RL Tape amp reel STAND OFF VOLTAGE BIDIRECTIONAL No suffix Unidirectional MARKING Logo Date Code Type Code Cathode Band for unidirectional types only PACKAGE MECHANICAL DATA DO 15 Plastic DIMENSIONS 6 75 0 238 0 266 0 116 0 139 1 024 1 220 0 028 0 035 Packaging standard packaging is in tape and r
2. Ipp Peak pulse current aT Voltage temperature coefficient Vr Forward voltage drop Types Ver Ir Vcr lpp Vcr lpp aT note2 10 1000us 8 20us note3 note4 Unidirectional Bidirectional HA V V mA V A V A 104 C pF BZW06 5V8 BZWO06 5V8B 1000 5 8 6 45 10 10 5 57 0 13 4 298 5 7 4000 BZW06 6V4 BZW06 6V4B 500 6 4 7 13 10 11 8 53 0 14 5 276 6 1 3700 BZW06 8V5 BZWO06 8V5B 10 8 5 9 5 1 14 5 41 18 6 215 7 3 2800 2 06 10 BZW06 10B 5 10 2 11 4 1 16 7 36 0 21 7 184 7 8 2300 BZWO06 13 BZWO06 13B 5 12 8 14 3 1 21 2 28 0 27 2 147 8 4 1900 BZW 06 15 BZW06 15B 1 15 3 17 1 1 25 2 24 0 32 5 123 8 8 1600 BZW 06 19 BZW06 19B 1 18 8 20 9 1 30 6 19 6 39 3 102 9 2 1350 BZW06 20 BZW06 20B 1 20 5 22 8 1 33 2 18 0 42 8 93 9 4 1250 BZWO06 23 BZW06 23B 1 23 1 25 7 1 37 5 16 0 48 3 83 9 6 1150 BZW06 26 BZW06 26B 1 25 6 28 5 1 41 5 14 5 53 5 75 9 7 1075 BZWO06 28 BZW06 28B 1 28 2 31 4 1 45 7 13 1 59 0 68 9 8 1000 BZWO06 31 BZWO06 31B 1 30 8 342 1 49 9 12 0 64 3 62 9 6 950 BZWO06 33 BZW06 33B 1 33 3 37 1 1 53 9 11 1 69 7 57 10 0 900 BZWO06 40 BZWO06 40B 1 40 2 44 7 1 64 8 9 3 84 48 10 1 800 BZWO06 48 BZWO06 48B 1 47 8 53 2 1 77 0 7 8 100 40 10 3 700 BZWO06 58 BZWO06 58B 1 581 64 6 1 92 0 6 5 121 33 10 4 625 BZWO06 70 BZW06 70B 1 704 77 9 1 113 5 3 146
3. 27 0 10 5 550 BZWO06 85 BZW06 85B 1 85 5 95 0 1 137 4 4 178 22 5 10 6 500 BZW06 102 BZWO06 102B 1 102 114 1 165 3 6 212 19 0 10 7 450 BZWO06 128 BZW06 128B 1 128 143 1 207 2 9 265 15 0 10 8 400 BZW06 154 BZW06 154B 1 154 171 1 246 2 4 317 12 6 10 8 360 BZW06 171 BZW06 171B 1 171 190 1 274 2 2 353 11 3 10 8 350 2 6 ky Unidirectional Types Bidirectional Irm Vrm BZWO06 xx aT note3 4 ioc pF pF 10 8 330 BZW06 188 BZW06 188B 1 BZW06 213 BZW06 213B 1 310 BZW06 256 BZW06 256B 1 290 BZW06 273 BZW06 273B 1 280 BZW06 299 BZW06 299B 1 270 BZW06 342 BZW06 342B il 360 BZW06 376 BZW06 376B 1 350 Fig 1 Peak pulse power dissipation versus initial junction temperature printed circuit board lpp 100 16 us PULSE WAVEFORM 10 1000 us 50 f 0 1000 ps Note 2 Pulse test tp lt 50 ms 25 VBR 25 C VR 0 V F 1 MHZ For bidirectional types capacitance value is divided by 2 20 40 60 80 100 120 140 160 180 200 3 6 BZW06 xx Fig 2 Peak pulse power versus exponential pulse duration Ppp W 1E5 c ee HHS LN 1 Th a p VA 14 HT a 1E1 0 001 0 01 0 1 1 100 Fig 3 Clamping voltage versus peak pulse current Exponential wavefo
4. D 0 BZw06 10 0 O BZWO6 5V8 376 1 TRANSIL FEATURES PEAK PULSE 600 W 10 1000us a STAND OFF VOLTAGE RANGE From 5 8V to 376 V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR a FAST RESPONSE TIME a UL RECOGNIZED DESCRIPTION Transil diodes provide high overvoltage protection by clamping action Their instantaneous response DO 15 to transient overvoltages makes them particu larly suited to protect voltage sensitive devices such as MOS Technology and low voltage sup plied IC s ABSOLUTE MAXIMUM RATINGS Tamb 25 C Symbol Parameter Value Unit Peak pulse power dissipation see note 1 Tj initial Tamb 600 W Power dissipation on infinite heatsink Non repetitive surge peak forward current tp 10ms for unidirectional types Tj initial 2 Tamp Storage temperature range 65 to 175 Maximum junction temperature 175 TL Maximum lead temperature for soldering during 10s a 5mm 230 C from case Note 1 For a surge greater than the maximum values the diode will fail in short circuit THERMAL RESISTANCES Symbol Parameter Value Unit Junction to ambient on printed circuit 10 mm February 2003 Ed 3A 1 6 BZWO06 xx ELECTRICAL CHARACTERISTICS Tamb 25 C Symbol Parameter VRM Stand off voltage VBR Breakdown voltage VoL Clamping voltage IRM Leakage current
5. eel Weight 0 4 g Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics The ST logo is a registered trademark of STMicroelectronics 2003 STMicroelectronics Printed in Italy All rights reserved STMicroelectronics GROUP OF COMPANIES Australia Brazil Canada China Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States http www st com ky WWW ALLDATASHEET COM Copyright Each Manufacturing Company All Datasheets cannot be modified without permission This datasheet has been download from www AllDataSheet com 100 Free DataSheet Search Site Free Download No Register Fast Search System www AllDataSheet com
6. rm tp 20 us 1000 gt t tP tp lt t0ps 100 Ipp A 0 1 1 10 100 1000 Note The curves of the figure are specified for a junction temperature of 25 before surge The given results may be extrapolated for other junction temperatures by using the following formula AVR QT Tamb 25 Var 25 For intermediate voltages extrapolate the given results 4 6 ky Fig 4a Capacitance versus reverse applied voltage for unidirectional types typical values C pF 10000 4 Tj 25 C 4 5824008 sv F 1 MHz j BZWoe 1000 S13 EB LL B 100 ZWo6 17 VR V 10 1 10 100 500 Fig 5 Peak forward voltage drop versus peak for ward current typical values for unidirectional types lem A 100 1 p Tj initial 25 C 150 C 10 Vem V 1 0 05 1 15 2 25 3 35 4 45 5 7 Relative variation of leakage current ver sus junction temperature

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