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ANALOG DEVICES ADM660 English products handbook

1. 20 TEMPERATURE C 40 60 80 100 TPC 14 Output Resistance vs Temperature GENERAL INFORMATION The ADM660 ADM8660 is a switched capacitor voltage con verter that can be used to invert the input supply voltage The ADM660 can also be used in a voltage doubling mode The voltage conversion task is achieved using a switched capacitor technique using two external charge storage capacitors An on board oscillator and switching network transfers charge between the charge storage capacitors The basic principle behind the voltage conversion scheme is illustrated in Figures 1 and 2 OUT V T o1 2 Q2 OSCILLATOR Figure 1 Voltage Inversion Principle 2 OSCILLATOR Figure 2 Voltage Doubling Principle Figure 1 shows the voltage inverting configuration while Figure 2 shows the configuration for voltage doubling An oscillator generating antiphase signals 01 and 2 controls switches S1 S2 and S3 S4 During 01 switches S1 and S2 are closed charging C1 up to the voltage at V During 02 S1 and S2 open and S3 and S4 close With the voltage inverter configuration during 2 the positive terminal of C1 is connected to GND via S3 and the negative terminal of C1 connects to Vour via S4 The net result is voltage inversion at Voyr wrt GND Charge on C1 is trans ferred to C2 during 02 Capacitor C2 maintains this voltage during 91 The charge transfer efficiency depends on the on resistance of the switches the frequency
2. 10 uF V Open 120 kHz 2 2 uF GND or V Ext Cap See Typical Characteristics GND Ext CLK Ext CLK Frequency 2 41 5V TO 47V INPUT CLK OSC O ADM660 CMOS GATE ADM8660 CAP osc C1 GND LV INVERTED CAP NEGATIVE 2 OUTPUT T c Figure 7 ADM660 ADM8660 External Oscillator Voltage Doubling Configuration Figure 8 shows the ADM660 configured to generate increased output voltages As in the inverting mode only two external capacitors are required The doubling function is achieved by reversing some connections to the device The input voltage is applied to the GND pin and V is used as the output Input voltages from 2 5 V to 7 V are allowable In this configuration pins LV OUT must be connected to GND The unloaded output voltage in this configuration is 2 Vix Output resistance and ripple are similar to the voltage inverting configuration Note that the ADMS8660 cannot be used in the voltage doubling configuration DOUBLED POSITIVE OUTPUT Figure 8 Voltage Doubler Configuration Shutdown Input The ADM8660 contains a shutdown input that can be used to disable the device and thus reduce the power consumption A logic high level on the SD input shuts the device down reducing the quiescent current to 0 3 uA During shutdown the output voltage goes to 0 V Therefore ground referenced loads are not powered during this state When exiting shutdown it takes several cycles approximately 500 us for the charge pump to reach
3. dominated by the internal switches on resistance From an out put impedance viewpoint therefore there is no benefit to be gained from using excessively large capacitors 500 C12 C2 22ypF 400 300 C1 C2 1pF 200 OUTPUT RESISTANCE C1 C2 10pF 100 1 10 100 OSCILLATOR FREQUENCY kHz Figure 9 Output Impedance vs Oscillator Frequency REV C Capacitor C2 The output capacitor size C2 affects the output ripple Increas ing the capacitor size reduces the peak to peak ripple The ESR affects both the output impedance and the output ripple Reducing the ESR reduces the output impedance and ripple For convenience it is recommended that both C1 and C2 be the same value Table III Capacitor Selection Charge Pump Capacitor Frequency C1 C2 25 kHz 10 uF 120 kHz 2 2 uF Power Efficiency and Oscillator Frequency Trade Off While higher switching frequencies allow smaller capacitors to be used for equivalent performance or improved performance with the same capacitors there is a trade off to consider As the oscillator frequency is increased the quiescent current increases This happens as a result of a finite charge being lost at each switching cycle The charge loss per unit cycle at very high frequencies can be significant thereby reducing the power effi ciency Since the power efficiency is also degraded at low oscillator frequencies due to an increase
4. in output impedance this means that there is an optimum frequency band for maximum power transfer Refer to the Typical Performance Characteristics section Bypass Capacitor The ac impedance of the ADM660 ADM8660 may be reduced by using a bypass capacitor on the input supply This capacitor should be connected between the input supply and GND It will provide instantaneous current surges as required Suitable capacitors of 0 1 uF or greater may be used ADM660 ADM8660 OUTLINE DIMENSIONS 0 400 10 16 0 365 9 27 0 355 9 02 en n 0 280 7 11 0 250 6 35 0 240 6 10 0 325 8 26 4 0 310 7 87 0 300 7 62 0 060 1 52 0 195 4 95 0 210 5 33 0 130 3 30 0 150 3 81 6 38 Ca 150 3 0 015 0 38 imo res ERE r 0 115 2 92 SEATING 0 014 0 36 0 022 0 56 knra 0 005 0 13 0 430 10 92 0 018 0 46 gt gt ja 0 005 0 13 MAX 0 014 0 36 0 070 1 78 0 060 1 52 0 045 1 14 COMPLIANT TO JEDEC STANDARDS MS 001 CONTROLLING DIMENSIONS ARE IN INCHES MILLIMETER DIMENSIONS IN PARENTHESES ARE ROUNDED OFF INCH EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN CORNER LEADS MAY BE CONFIGURED AS WHOLE OR HALF LEADS Figure 10 8 Lead Plastic Dual In Line Package PDIP Narrow Body N 8 Dimensions shown in inches and millimeters 070606 A 5 00 0 1968 4 80 0 1890 6 20 0 2441 4 00 0 1574 5 80 0 2284 3 80 0 14
5. its final value If the shutdown function is not being used then SD should be hardwired to GND Capacitor Selection The optimum capacitor value selection depends the charge pump frequency With 25 kHz selected 10 uF capacitors are recommended while with 120 kHz selected 2 2 uF capacitors may be used Other frequencies allow other capacitor values to be used For maximum efficiency in all cases it is recommended that capaci tors with low ESR are used for the charge pump Low ESR capacitors give both the lowest output resistance and lowest ripple voltage High output resistance degrades the overall power efficiency and causes voltage drops especially at high output REV C ADM660 ADM8660 current levels The ADM660 ADM8660 is tested using low ESR 10 uF capacitors for both C1 and C2 Smaller values of C1 increase the output resistance while increasing C1 will reduce the output resistance The output resistance is also depen dent on the internal switches on resistance as well as the capacitors ESR so the effect of increasing C1 becomes negligible past a certain point Figure 9 shows how the output resistance varies with oscillator frequency for three different capacitor values At low oscillator frequencies the output impedance is dominated by the 1 fc term This explains why the output impedance is higher for smaller capacitance values At high oscillator frequencies the l fc term becomes insignificant and the output impedance is
6. kHz using the Frequency Control FC input With FC unconnected ADM660 or connected to GND ADMS8660 the internal charge pump runs at 25 kHz while if FC is connected to V the frequency is increased by a factor of five Increasing the frequency allows smaller capacitors to be used for equivalent performance or if the capacitor size is un changed it results in lower output impedance and ripple If a charge pump frequency other than the two fixed values is desired this is made possible by the OSC input which can either have a capacitor connected to it or be overdriven by an external clock Refer to the Typical Performance Characteris tics which shows the variation in charge pump frequency versus capacitor size The charge pump frequency is one half the oscil lator frequency applied to the OSC pin If an external clock is used to overdrive the oscillator its levels should swing to within 100 mV of V and GND A CMOS driver is therefore suitable When OSC is overdriven FC has no effect but LV must be grounded Note that overdriving is permitted only in the voltage inverter configuration Table I ADM660 Charge Pump Frequency Selection FC OSC Charge Pump C1 C2 Open Open 25 kHz 10 uF V Open 120 kHz 2 2 UF Open or V Ext Cap See Typical Characteristics Open Ext CLK Ext CLK Frequency 2 Table II ADM8660 Charge Pump Frequency Selection FC OSC Charge Pump C1 C2 GND Open 25 kHz
7. 0 and LTC1046 The ADM660 ADM8660 is available in 8 lead DIP and narrow body SOIC The ADM660 is also available in a 16 lead TSSOP package ADM660 ADM8660 Options Option ADM660 ADM8660 Inverting Mode Y Y Doubling Mode Y N External Oscillator Y N Shutdown N Y Package Options R 8 Y Y N 8 Y Y RU 16 Y N One Technology Way P O Box 9106 Norwood MA 02062 9106 U S A Tel 781 329 4700 www analog com Fax 781 461 3113 2011 Analog Devices Inc All rights reserved ADM660 ADM8660 SPECIFICATION V 5 V C1 C02 10pF Ta Twin to Tmax unless otherwise noted Parameter Min Typ Max Unit Test Conditions Comments Input Voltage V R 1 kQ 3 3 7 0 V Inverting Mode LV Open 1 5 7 0 V Inverting Mode LV GND 2 5 7 0 V Doubling Mode LV OUT Supply Current No Load 0 6 1 mA FC Open ADM660 GND ADM8660 25 4 5 mA FC V LV Open Output Current 100 mA Output Resistance ADM660 9 15 Q I 100 mA Output Resistance ADM8660 9 15 Q I 100 mA T4 25 C Output Resistance ADM8660 16 5 Q I 100 mA T4 40 C to 85 C Charge Pump Frequency 25 kHz FC Open ADM660 GND ADM8660 120 kHz FC V OSC Input Current t5 uA FC Open ADM660 GND ADM8660 25 uA FC V Power Efficiency FC Open ADM660 90 94 R 1 kQ Connected from V to OUT Power Efficiency FC Open ADM8660 90 94 R 1 kQ Connected from V to OUT Ta 25 C Power Effici
8. 97 0 50 0 0196 1 75 0 0688 M 0 25 0 0099 0 25 0 0098 1 35 0 0532 go 0 10 0 0040 Y 07 COPLANARITY 0 51 0 0201 F gt e 0 10 alos 0 0122 0 25 0 0098 1 27 0 0500 SEATING 0 25 0 0098 5 40 0 0157 PLANE 0 17 0 0067 COMPLIANT TO JEDEC STANDARDS MS 012 AA CONTROLLING DIMENSIONS ARE IN MILLIMETERS INCH DIMENSIONS IN PARENTHESES ARE ROUNDED OFF MILLIMETER EQUIVALENTS FOR REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN Figure 11 8 Lead Standard Small Outline Package SOIC_N Narrow Body R 8 Dimensions shown in millimeters and inches 012407 A 10 REV C ADM660 ADM8660 ees 030 A i H 8 aia 060 L4 0 19 SEATING o 0 45 PLANE COPLANARITY 0 10 COMPLIANT TO JEDEC STANDARDS MO 153 AB Figure 12 16 Lead Thin Shrink Small Outline Package TSSOP RU 16 Dimensions shown in millimeters ORDERING GUIDE Model Temperature Range Package Description Package Option ADM660ANZ 40 C to 85 C 8 Lead Plastic Dual In Line Package PDIP N 8 ADM660ARZ 40 C to 85 C 8 Lead Standard Small Outline Package SOIC_N R 8 ADM660ARZ REEL 40 C to 85 C 8 Lead Standard Small Outline Package SOIC_N R 8 ADM660ARUZ 40 C to 85 C 16 Lead Thin Shrink Small Outline Package TSSOP RU 16 ADM660ARUZ REEL 40 C to 85 C 16 Lead Thin Shrink Small Outline Package TSSOP RU 16 ADM660ARUZ REEL7 40 C to 85 C 16
9. ANALOG DEVICES CMOS Switched Capacitor Voltage Converters ADM660 ADM8660 FEATURES ADM6E660 Inverts or Doubles Input Supply Voltage ADM8660 Inverts Input Supply Voltage 100 mA Output Current Shutdown Function ADM8660 2 2 uF or 10 uF Capacitors 0 3 V Drop at 30 mA Load 1 5 V to 7 V Supply Low Power CMOS 600 pA Quiescent Current Selectable Charge Pump Frequency 25 kHz 120 kHz Pin Compatible Upgrade for MAX660 MAX665 ICL7660 Available in 16 Lead TSSOP Package APPLICATIONS Handheld Instruments Portable Computers Remote Data Acquisition Op Amp Power Supplies GENERAL DESCRIPTION The ADM660 ADM8660 is a charge pump voltage converter that can be used to either invert the input supply voltage giving Vout Vm or double it ADM660 only giving Voyr 2 X Vin Input voltages ranging from 1 5 V to 7 V can be inverted into a negative 1 5 V to 7 V output supply This inverting scheme is ideal for generating a negative rail in single power supply systems Only two small external capacitors are needed for the charge pump Output currents up to 50 mA with greater than 90 efficiency are achievable while 100 mA achieves greater than 80 efficiency A Frequency Control FC input pin is used to select either 25 kHz or 120 kHz charge pump operation This is used to optimize capacitor size and quiescent current With 25 kHz selected a 10 UF external capacitor is suitable while with 120 kHz the capacitor may be redu
10. D 80mA OUTPUT VOLTAGE Volts 3 o CHARGE PUMP FREQUENCY kHz a ies a o E o 10 100 1000 40 20 0 20 40 60 80 CHARGE PUMP FREQUENCY kHz TEMPERATURE C TPC 7 Output Voltage vs Charge Pump Frequency TPC 10 Charge Pump Frequency vs Temperature 4 o tan m a p OUTPUT SOURCE RESISTANCE Q a CHARGE PUMP FREQUENCY kHz 3 FC V 100 LV GND N eo FC OPEN LV GN o eo a 0 0 1 1 5 2 5 3 5 4 5 5 5 6 5 1 10 100 1k SUPPLY VOLTAGE Volts CAPACITANCE pF TPC 8 Output Source Resistance vs Supply Voltage TPC 11 Charge Pump Frequency vs External Capacitance 140 N eo e eo eo eo o eo B eo CHARGE PUMP FREQUENCY kHz CHARGE PUMP FREQUENCY kHz N eo 1 5 2 5 3 5 4 5 5 5 6 5 0 3 3 5 4 45 5 5 5 6 65 7 SUPPLY VOLTAGE Volts SUPPLY VOLTAGE VOIR TPC 9 Charge Pump Frequency vs Supply Voltage TPC 12 Charge Pump Frequency vs Supply Voltage 262 REV C ADM660 ADM8660 160 140 100 CHARGE PUMP FREQUENCY kHz 20 40 TEMPERATURE C 60 80 100 TPC 13 Charge Pump Frequency vs Temperature 60 e eo E eo y e eo OUTPUT SOURCE RESISTANCE N o
11. Lead Thin Shrink Small Outline Package TSSOP RU 16 ADM8660ANZ 40 C to 85 C 8 Lead Plastic Dual In Line Package PDIP N 8 ADM8660ARZ 40 C to 85 C 8 Lead Standard Small Outline Package SOIC_N R 8 ADM8660ARZ REEL 40 C to 85 C 8 Lead Standard Small Outline Package SOIC_N R 8 Z RoHS Compliant Part REVISION HISTORY 4 11 Rev B to Rev C Changes to Ordering Guide sse 11 12 02 Rev A to Rev B Renumbered TPCs and Figures sss Universal Edits t Specifications eerte aret isss 2 Updated Absolute Maximum Ratings see 3 Updated Outline Dimensions eerte 10 2011 Analog Devices Inc All rights reserved Trademarks and ANALOG registered trademarks are the property of their respective owners D00082 0 4 11 C DEVICES www analo g com REV C 11
12. NO CONNECT PIN FUNCTION DESCRIPTIONS Inverter Configuration Doubler Configuration ADM660 Only Mnemonic Function Mnemonic Function FC Frequency Control Input for Internal Oscillator FC Frequency Control Input for Internal Oscillator and Charge Pump With FC Open ADM660 and Charge Pump With FC Open fcp or connected to GND ADM8660 fcp 25 kHz 25 kHz with FC V fcp 120 kHz with FC V fcp 120 kHz CAP Positive Charge Pump Capacitor Terminal CAP Positive Charge Pump Capacitor Terminal GND Positive Input Supply GND Power Supply Ground i CAP Negative Charge Pump Capacitor Terminal CAP Negative Charge Pump Capacitor Terminal OUT Output Negative Voltage our cordund LV Low Voltage Operation Input Connect to GND LV Low Voltage Operation Input Connect to OUT when input voltage is less than 3 5 V Above OSC Must be left unconnected in this mode 3 5 V LV may be connected to GND or left unconnected V Doubled Positive Output OSC ADM6060 Oscillator Control Input OSC is connected to an internal 15 pF capacitor An external capacitor may be connected to slow the oscillator An external oscillator may also be used to overdrive OSC The charge pump frequency is equal to 1 2 the oscillator frequency SD ADM8660 Shutdown Control Input This in put when high is used to disable the charge pump thereby reducing the power consumption V Positive Power Supply Input 4 REV C
13. Typical Performance Characteristics ADM660 ADM8660 3 0 100 I 10mA T 90 2 5 OLTAGE DOUBLER L 1mA z LV OUT go ue 20 8 w 70 tc o 4 5 i 2 uL o ui 60 xd m lj 50mA amp w amp 1 0 2 9 50 IL 2 80mA 7 0 5 40 0 30 1 5 3 57 5 5 5 1k 10k 100k 1M SUPPLY VOLTAGE Volts CHARGE PUMP FREQUENCY Hz TPC 1 Power Supply Current vs Voltage TPC 4 Efficiency vs Charge Pump Frequency 3 0 100 3 5 EFFICIENCY 3 0 3 4 80 2 lt E 2 5 o E o E 3 8 60 2D gt LV GND e a d 2 2 VOLTAGE DOUBLER S 9 ui 9 15 4 2 40 0 gt gt V u a a OUT u a 2 1 0 o 46 20 0 5 LV GND VOLTAGE INVERTER 5 0 0 0 0 20 40 60 80 100 1 10 100 1000 LOAD CURRENT mA CHARGE PUMP FREQUENCY kHz TPC 2 Output Voltage and Efficiency vs Load Current TPC 5 Power Supply Current vs Charge Pump Frequency 2 6 a gt B ag x E lt a o 35 a gt i o Sa i aad ul 5 o z oS a ira 0 20 40 60 80 100 LOAD CURRENT mA LOAD CURRENT mA TPC 3 Output Voltage Drop vs Load Current TPC 6 Power Efficiency vs Load Current REV C 5 ADM660 ADM8660 5 0 35 45 LOAD 10mA LOAD 1mA o N a 2 a LOAD 50mA sd o nN eo N a a N o a LOA
14. at which they are being switched and also on the equivalent series resistance ESR of the external capacitors The reason for this is explained in the following section For maximum efficiency capacitors with low ESR are therefore recommended The voltage doubling configuration reverses some of the con nections but the same principle applies REV C Switched Capacitor Theory of Operation As already described the charge pump on the ADM660 ADM8660 uses a switched capacitor technique in order to invert or double the input supply voltage Basic switched capacitor theory is discussed below A switched capacitor building block is illustrated in Figure 3 With the switch in position A capacitor C1 will charge to voltage V1 The total charge stored on C1 is q1 CIVI The switch is then flipped to position B discharging C1 to voltage V2 The charge remaining on Cl is q2 C1V2 The charge transferred to the output V2 is therefore the difference between q1 and q2 so Aq ql q2 Cl V1 V2 v2 Figure 3 Switched Capacitor Building Block As the switch is toggled between A and B at a frequency f the charge transfer per unit time or current is T f Aq f CDV1 V2 Therefore I V1 V2 0 fC1 V1 V2 K Rgo where Rgo 1 fC1 The switched capacitor may therefore be replaced by an equivalent resistance whose value is dependent on both the capacitor size and the switching frequency This explains why lower capacitor values m
15. ay be used with higher switching frequencies It should be remembered that as the switching frequency is increased the power consumption will increase due to some charge being lost at each switching cycle As a result at high frequencies the power efficiency starts decreasing Other losses include the resistance of the internal switches and the equivalent series resistance ESR of the charge storage capacitors Req vi v2 M c2 RL Reg 1 fC1 i Figure 4 Switched Capacitor Equivalent Circuit ADM660 ADM8660 Inverting Negative Voltage Generator Figures 5 and 6 show the ADM660 ADM8660 configured to generate a negative output voltage Input supply voltages from 1 5 V up to 7 V are allowable For supply voltage less than 3 V LV must be connected to GND This bypasses the internal regulator circuitry and gives best performance in low voltage applications With supply voltages greater than 3 V LV may be either connected to GND or left open Leaving it open facili tates direct substitution for the ICL7660 1 5V TO 7V INPUT O FC ApMec0 CAP osc cit GND LV 10pF INVERTED CAP OUT NEGATIVE OUTPUT Tene Figure 5 ADM660 Voltage Inverter Configuration 1 5V TO 47V INPUT O FC ADMs660 V CAP cit GND 10pF INVERTED NEGATIVE OUTPUT CAP SHUTDOWN CONTROL SP Figure 6 ADM8660 Voltage Inverter Configuration OSCILLATOR FREQUENCY The internal charge pump frequency may be selected to be either 25 kHz or 120
16. ced to 2 2 uF The oscillator frequency on the ADM660 can also be controlled with an external capacitor connected to the OSC input or by driving this input with an external clock In applications where a higher supply voltage is desired it is possible to use the ADM660 to double the input voltage With input voltages from 2 5 V to 7 V output voltages from 5 V to 14 V are achievable with up to 100 mA output current The ADM8660 features a low power shutdown SD pin instead of the external oscillator OSC pin This can be used to disable the device and reduce the quiescent current to 300 nA REV C Information furnished by Analog Devices is believed to be accurate and reliable However no responsibility is assumed by Analog Devices for its use norfor any infringements of patents or other rights ofthird parties that may result from its use No license is granted by implication or otherwise under any patent or patent rights of Analog Devices Trademarks and registered trademarks are the property of their respective companies TYPICAL CIRCUIT CONFIGURATIONS 1 5V TO 7V INPUT ADM660 CAP osc cit 10pF GND LV INVERTED CAP NEGATIVE C2 OUTPUT THF Voltage Inverter Configuration ADM660 1 5V TO 7V INPUT FC V ADM8660 CAP cit LV 10pF INVERTED NEGATIVE c2 OUTPUT SHUTDOWN CONTROL THOF Voltage Inverter Configuration with Shutdown ADM8660 The ADM660 is a pin compatible upgrade for the MAX660 MAX665 ICL766
17. ency FC Open ADM8660 88 5 R 1 KQ Connected from V to OUT Ta 40 C to 85 C Power Efficiency FC Open ADM660 90 93 R 500 Q Connected from OUT to GND Power Efficiency FC Open ADM8660 90 93 R 500 Q Connected from OUT to GND Ta 25 C Power Efficiency FC Open ADM8660 88 5 R 500 Q Connected from OUT to GND Ta 40 C to 85 C Power Efficiency FC Open 81 5 I 100 mA to GND Voltage Conversion Efficiency 99 99 96 No Load Shutdown Supply Current Isypn 0 3 5 uA ADM8660 SHDN V Shutdown Input Voltage Vsupx 2 4 V SHDN High Disabled 0 8 V SHDN Low Enabled Shutdown Exit Time 500 us I 100 mA C and C2 are low ESR 0 2 Q electrolytic capacitors High ESR degrade performance Specifications subject to change without notice REV C ADM660 ADM8660 ABSOLUTE MAXIMUM RATINGS Power Dissipation RU 16 2 00 00 eee ee 500 mW Ta 25 C unless otherwise noted Derate 6 mW C above 50 C Input Voltage V to GND GND to OUT 7 5 V Ora Thermal Impedance i096 e xxn 158 C W LV Input Voltage OUT 0 3 V to V 40 3 V Operating Temperature Range FC and OSC Input Voltage Industrial A Version 40 C to 85 C MEC OUT 0 3 V or V 6 V to V 0 3 V Storage Temperature Range 65 C to 150 C OUT V Output Current Continuous 120 mA Lead Temperature Range Soldering 10 sec 300 C Output Sh
18. ort Circuit DurationtoGND 10 secs Vapor Phase 60 sec 0 esses eee sees PIC Power Dissipation N 8 00 0 0 cee eee eee 625 mW Infrared 15 S C cien 220 C Derate 8 3 mW C above 50 C ESD Rating 22 49 9 e ey e eee aw Weeden 22000 V Oja Thermal Impedance EEE E E N rere 120 C W This is a stress rating only functional operation of the device at these or any other Power Dissipation R 8 2 0 eee ee eee 450 mW conditions above those indicated in the operation section of this specification is not Derate 6 mW C above 50 C implied Exposure to absolute maximum rating conditions for extended periods Oza Thermal Impedance 170 C AW may affect device reliability JA 4nermal impedance eee eee eee eens CAUTION ESD electrostatic discharge sensitive device Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection Although the ADM660 ADM8660 features proprietary ESD protection circuitry permanent damage may occur on devices subjected to high energy electrostatic discharges Therefore proper ESD precautions are recommended to avoid performance degradation or loss of functionality WARNING ESD SENSITIVE DEVICE REV C ADM660 ADM8660 PIN CONNECTIONS 8 Lead TOP VIEW GND 3 Not to Scale 6 Lv TOP VIEW GND 3 Not to Scale 6 Lv CAP 4 Top view 13 OSC Not to Scale NC

ANALOG DEVICES ADM660 English products handbook

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