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ST STPS10H100CT/CG/CR/CFP DATA SHEET

1. 100 0 IFM A Tj 125 C 35 Typical values me 227 10 0 lt 5 Tj 125 C Typha values Ty Tj 25 C 4 10 Fa ot 2 A 74 VFM V 0 1 Lid 0 0 0 2 0 4 0 6 0 8 1 0 1 2 1 4 4 7 Fig 8 Junction capacitance versus reverse voltage applied typical values per diode C pF 1000 F 1MHz Tj 25 C 100 VR V 1 2 5 10 20 50 100 10 Thermal resistance junction to ambient versus copper surface under tab Epoxy printed circuit board FR4 copper thickness 5 4 Rth j a C W S Cu cm 0 2 4 6 8 10 12 14 16 18 20 STPS10H100CT CG CR CFP PACKAGE MECHANICAL DATA D PAK DIMENSIONS REF Millimeters C2 4 A d A1 0 098 0 106 A 0 001 0 009 B 070 093 0 027 0 037 B2 114 170 0 045 0 067 C Pra 0 60 0 017 0 024 C2 0 048 E TA D 895 9 35 0 352 0 368 o7 E 1000 10 40 0 393 0 409 G 4 88 5 28 0 192 0 208 L L2 L3 M 2 40 3 20 0 094 0 126 R 0 40 typ 0 016 typ FLAT ZONE NO LESS THAN 2mm V2 FOOT PRINT in millimeters 16 90
2. 10 30 DL T F 5 08 57 STPS10H100CT CG CR CFP PACKAGE MECHANICAL DATA PAK Millimeters Inches Min Max Min Max 4 40 4 60 0 173 0 181 2 49 2 69 0 098 0 106 0 70 0 93 0 028 0 037 1 14 1 17 0 044 0 046 1 14 1 17 0 044 0 046 0 45 0 60 0 018 0 024 1 23 1 36 0 048 0 054 8 95 9 35 0 352 0 368 2 40 2 70 0 094 0 106 10 0 10 4 0 394 0 409 13 1 13 6 0 516 0 535 3 48 3 78 0 137 0 149 1 27 1 40 0 050 0 055 PACKAGE MECHANICAL DATA TO 220FPAB DIMENSIONS dcc Millimeters Inches A in PM 46 0 173 0 181 2 5 0 106 25 275 0 098 0 108 t 0 45 0 70 0 018 0 027 0 75 0 039 1 15 1 70 0 045 0 067 L2 17 1 15 1 70 0 045 0 067 T e 0 205 0 094 0 106 DS 0 393 0 409 gt ey 2 0 63 L4 1 126 1 205 4 0 886 0 417 me 5 0 142 eit 6 0 626 0 646 em 7 0 354 0 366 Dia 3 00 320 0 118 0 126 STPS10H100CT CG CR CFP PACKAGE MECHANICAL DATA TO 220AB REF DIMENSIONS Millimeters Inches 0 88 0 034 1 70 0 066 0 066 0 202 i 2 70 0 094 0 106 H2 10 10 40 0 393 0 409 1 L2 L2 16 4 t
3. 0 75 100 125 150 Fig 5 2 Non repetitive surge peak forward current versus overload duration maximum values per diode TO 220FPAB IM A t s 1 2 1E 1 1E 0 Fig 6 2 Relative variation of thermal impedance junction to case versus pulse duration per diode TO 220FPAB Zth j c Rth j c 1 0 0 8 0 6 75 05 0 4 5 02 s 01 Single pulse tp s G tp T tp T 0 LLLI T LL LLLI 1 2 1 1 1E 0 1E 1 3 7 STPS10H100CT CG CR CFP Fig 7 Reverse leakage current versus reverse voltage applied typical values per diode IR uA 1E 4 um 1E 3 a 1E 2 1E 1 1E 0 Tj 25C I 1E 1 VR V 0 10 20 30 40 50 60 70 80 90 100 1E 2 Fig 9 Forward voltage drop versus forward current maximum values per diode
4. AJJ STPS10H1O0CTICGICRICFP HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS FEATURES AND BENEFITS HIGH JUNCTION TEMPERATURE CAPABILITY FOR CONVERTERS LOCATED IN CONFINED al 2 1 ENVIRONMENT D PAK IPAK LOW LEAKAGE CURRENT HIGH STPS10H100CG STPS10H100CR TEMPERATURE LOW STATIC AND DYNAMIC LOSSES AS A RESULT OF THE SCHOTTKY BARRIER AVALANCHE CAPABILITY SPECIFIED DESCRIPTION Schottky barrier rectifier designed for high frequency miniature Switched Mode Power Supplies such as adaptators and on board TO 220AB TO 220FPAB DC DC converters Packaged in TO 220AB STPS10H100CT STPS10H100CFP TO 220FPAB and ABSOLUTE RATINGS limiting values per diode Symbol Parameter Value Unit Repetitive peak reverse voltage 100 8 RMS forward current 10 Average forward TO 220AB 165 per diode 5 current 8 0 5 D PAK PPAK per device 10 TO 220FPAB Tc 160 C Surge non repetitive forward current tp 10 ms sinusoidal 180 Repetitive peak reverse current tp 2 us square F 1kHz 1 Parm Repetitive peak avalanche power 1 25 7200 Tstg Storage temperature range 65 0 175 Tj Maximum operating junction temperature 175 dV dt Critical rate of rise of reverse voltage 10000 dPtot lt 1 dTj Rth j July 2003 Ed 3F 1 7
5. V A A A A W C C thermal runaway condition for a diode on its own heatsink STPS10H100CT CG CR CFP THERMAL RESISTANCES Parameter Junction to case D2PAK I2PAK Per diode TO 220AB Total Coupling Junction to case TO 220FPAB Total Rth Coupling 2 5 When the diodes 1 and 2 are used simultaneously A Tj diode 1 P diode1 x Rinj og Per diode P diode 2 x Rth c STATIC ELECTRICAL CHARACTERISTICS per diode Parameter Tests conditions Reverse leakage current Tj 25 C Vn Tj 125 C Forward voltage drop Tj 25 C 125 25 Tj 125 Pulse test 5 lt 2 tp 380 us lt 2 To evaluate the maximum conduction losses use the following equation P 0 51 lr av 0 02 x IE Rus Fig 1 Average forward power dissipation versus Fig 2 Average forward current versus ambient average forward current per diode temperature 820 5 per diode PF av W IF av A 0 8 01 5 02 18 05 6 EN 3 5 Sone X Rth j a Rth j c 3 0 X D PAK I PAK TO 220AB 1 25 4 220 2 0 3 Rth j a 1 5 2 10 a 0 5 1 0 0 IF av A uM i
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7. r e 70 0 0 5 1 0 1 5 2 0 25 3 0 3 5 40 45 5 0 5 5 6 0 00 25 50 75 100 125 150 175 27 ky Fig 3 Normalized avalanche power derating ver sus pulse duration PARM tp i 1 5 0 01 0 001 0 01 0 1 1 10 100 1000 Fig 5 1 repetitive surge peak forward current versus overload duration maximum values per diode 120 100 nds 1 2 1 1 1 0 Fig 6 1 Relative variation of thermal impedance junction to case versus pulse duration per diode 13 Zth j c Rth j c 0 8 0 6 8 205 0 4 Fs o2 9201 0 2 Single pulse RB O tp T t 0 0 tp s 1E 8 1E 2 1E 1 1E 0 ky STPS10H100CT CG CR CFP Fig 4 Normalized avalanche power derating versus junction temperature PARM tp Parm 25 C 1 2 1 0 8 0 6 0 4 0 2 0 1 1 1 0 25 5
8. yp 0 645 typ L4 3 14 0 551 L9 3 50 0 154 2 6 typ 0 102 typ Diam 3 75 3 85 0 147 0 151 Cooling method C 4 Recommended torque value 0 55 m N Maximum torque value 0 70 m N Ordering type Marking Package Weight Base qty Delivery mode STPS10H100CT STPS10H100CT 220 2 20g 50 Tube STPS10H100CFP STPS10H100CFP TO 220FPAB 2 0g 50 Tube STPS10H100CG STPS10H100CG 50 STPS10H100CG TR STPS10H100CG 1000 STPS10H100CR STPS10H100CR 50 Epoxy meets UL94 VO Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics The ST logo is a registered trademark of STMicroelectronics 2003 STMicroelectronics Printed in Italy All rights reserved STMicroelectronics GROUP OF COMPANIES Australia Brazil Canada China Finl

ST STPS10H100CT/CG/CR/CFP DATA SHEET

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