NEC 2SK3296 Manual
Contents
1. c DRAIN TO SOURCE ON STATE RESISTANCE vs SOURCE TO DRAIN DIODE CHANNEL TEMPERATURE FORWARD VOLTAGE 25 8 lo 18A 1000 used S Pulsed lt 2 1 g 20 Ves 4 5 V 100 Ves 10 V tc o o 5 S 15 5 45y i p 10 7 0 V S o 0v 8 10 10v ey o eo p E 5 a 0 1 2 00 0 01 f 50 0 50 100 150 o 02 04 06 08 1 12 14 16 tc Ten Channel Temperature C Vso Source to Drain Voltage V CAPACITANCE vs DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS 1 10000 m Ves 0V 2 TR f21MHz o o 5 E o F tr E gt 1000 o o Ciss 3 tr 3 1000 7 g 100 Td otf oss y Css E ie Voo 10 V amp 10 Ves 10V 100 5 Re 10Q 0 1 1 10 100 0 1 1 10 100 Vos Drain to Source Voltage V lo Drain Current A REVERSE RECOVERY TIME vs DIODE FORWARD CURRENT DYNAMIC INPUT O2. 15 20 Vas Gate to Source Voltage V 25K3296 FORWARD TRANSFER CHARACTERISTICS 1000 100 lt FIch 50 C 29 25 C u 25 C 5 er 3 125 m 150 C S A 01 2 0 01 Vos 10 V 0 001 Pulsed 0 1 2 3 4 5 6 Ves Gate to Source Voltage V FORWARD TRANSFER ADMITTANCE vs DRAIN CURRENT n 100 o 2 Ten 50 C g 25 C E 25 C 3 10 75 C lt 150 C o 2 S E m Gc 1 o LL _ Vos 10 V 0 1 Pulsed m 0 1 1 10 100 Ip Drain Current A e DRAIN TO SOURCE ON STATE RESISTANCE vs DRAIN CURRENT o 50 3 Pulsed 8 E 2 40 ra o 3 dv 30 c O 3 s 20 Ves 4 5 V o 7 0V 72 2 10V g 10 z a 0 amp 1 10 100 1000 a Ip Drain Current A Data Sheet D14063EJ2VODS NEC 25K3296
3. publications of NEC s data sheets or data books etc for the most up to date specifications of NEC semiconductor products Not all products and or types are available in every country Please check with an NEC sales representative for availability and additional information No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC NEC assumes no responsibility for any errors that may appear in this document NEC does not assume any liability for infringement of patents copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products No license express implied or otherwise is granted under any patents copyrights or other intellectual property rights of NEC or others Descriptions of circuits software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples The incorporation of these circuits software and information in the design of customer s equipment shall be done under the full responsibility of customer NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits software and information While NEC endeavours to enhance the quality reliability and safety of NEC semiconductor produc
4. 000 z o 5 100 Rit cn A 83 3 C W e S e 10 o E Rinich c 3 13 C W E E 1 t o 5 O 0 A O A U RE A O Y O 0 0 01 O A EET S F 01 Single Pulse 0 01 104 1004 1m 10m 100m 1 10 100 1000 PW Pulse Width sec Data Sheet D14063EJ2VODS 5 NEC PACKAGE DRAWINGS Unit mm 1 TO 220AB MP 25 0 75 0 1 2 54 TYP 10 6 MAX 15 5 MAX 127 MIN 3 TO 263 MP 25ZK No plating EQUIVALENT CIRCUIT Drain Gate Gate Protection Diode FH Source Body Diode 0 5 0 2 1 2 8 0 2 1 Gate 2 Drain 3 Source 4 Fin Drain 4 45 0 2 ri 1 340 2 15 25 0 5 2 Drain 3 Source 4 Fin Drain Remark serves as a protector against ESD 2 TO 262 12 7 MIN t 2 54 TYP 4 TO 263 MP 25ZJ 1 0 0 5 25K3296 0 5 0 2 2 8 0 2 1 Gate 2 Drain 3 Source 4 Fin Drain 1 Gate 2 Drain 3 Source 4 Fin Drain The diode connected between the gate and source of the transistor When this device actually used an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device Data Sheet D14063EJ2VODS NEC 2SK3296 MEMO Data Sheet D14063EJ2VODS 7 NEC 25K3296 The information in this document is current as of May 2001 The information is subject to change without notice For actual design in refer to the latest
5. DATA SHEET MOS FIELD EFFECT TRANSISTOR 25K3296 SWITCHING N CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3296 is N Channel MOS FET device that features a low on state resistance and excellent switching characteristics 2SK3296 TO 220AB designed for low voltage high current applications such as DC DC converter with synchronous rectifier 2SK3296 S TO 262 2SK3296 ZK TO 263 MP 25ZK 25K3296 ZJ TO 263 MP 25ZJ FEATURES e 4 5 V drive available e Low on state resistance Ros on 12 MQ MAX Vas 10 V Ip 18 A e Low gate charge Qc 30 nC TYP Ip 35 A Voo 16 V Ves 10 V e Built in gate protection diode e Surface mount device available ABSOLUTE MAXIMUM RATINGS Ta 25 C Drain to Source Voltage Ves O V Voss 20 V Gate to Source Voltage Vos 0 V Voss 20 V Drain Current DC Tc 25 C Ip bc 35 A Drain Current Pulse Note ID puise 140 A Total Power Dissipation Ta 25 C Pr 1 5 W Total Power Dissipation Tc 25 C Pra 40 W Channel Temperature Teh 150 C Storage Temperature Tstg 55 to 150 C Note PW lt 10 us Duty Cycle lt 1 The information in this document is subject to change without notice Before using this document please confirm that this is the latest version Not all devices types available in every country Please check with local NEC representative for availability and additional information Document No D14063EJ2VODS00 2
6. UTPUT CHARACTERISTICS 1900 di dt 100 A us gt a de 2 Vas 20 V 1 gt i 2 o 2 S 55 12 E 100 gt 5 5 9 3 5 9 3 g 10 8 8 A 2 E 2 B 46 1 0 0 0 1 1 10 100 0 10 20 30 40 Iso Diode Forward Current A Qu Gate Charge nC Data Sheet D14063EJ2VODS NEC 25K3296 DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs SAFE OPERATING AREA CASE TEMPERATURE 50 3 o 100 40 5 2 80 amp tw 2 30 cc a 5 60 5 o z S 20 EOM 8 O o E i 10 E 20 oO 0 0 0 20 40 60 680 100 120 140 160 0 20 40 60 80 100 120 140 160 Ten Channel Temperature C Tc Case Temperature C FORWARD BIAS SAFE OPERATING AREA 1000 xt gt Ip pulse ay 1 qe de S g toes I o N co y o 5 e AONAN KON s 2 v gt ee N e NG S 10F EN 2 Ed Tc 25 C 06 4 Single Pulse 0 1 1 10 100 Vos Drain to Source Voltage V TRANSIENT THERMAL RESISTANCE vs PULSE WIDTH 1
7. ife support etc The quality grade of NEC semiconductor products is Standard unless otherwise expressly specified in NEC s data sheets or data books etc If customers wish to use NEC semiconductor products in applications not intended by NEC they must contact an NEC sales representative in advance to determine NEC s willingness to support a given application Note 1 NEC as used in this statement means NEC Corporation and also includes its majority owned subsidiaries 2 NEC semiconductor products means any semiconductor product developed or manufactured by or for NEC as defined above M8E 00 4
8. nd edition Date Published May 2001 NS CP K Printed in Japan The mark shows major revised points NEC Corporation 1999 2000 NEC 25K3296 ELECTRICAL CHARACTERISTICS Ta 25 C CHARACTERISTICS SYMBOL TEST CONDITIONS UNIT Forward Transfer Admittance yts Vos 10V lo 18A S Drain to Source On state Resistance N E 10V lo 18A Tee Ai TS Fear x Bee nun NN NNNM Gate to Drain Charge Diode Forward Voltage Ir 35 A Vos 0 V Reverse Recovery Time te es 35 A Ves 0 V Reverse Recovery Charge di dt 100 A us TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D U T H i 22 DA I R Vas ho Wave Form PG PG 50 0 IN T T Ves Ip Wave Form EN t 1us Duty Cycle lt 1 2 Data Sheet D14063EJ2VODS NIEC TYPICAL CHARACTERISTICS Ta 25 C lo Drain Current A DRAIN CURRENT vs DRAIN TO SOURCE VOLTAGE 1 2 3 Vos Drain to Source Voltage V GATE TO SOURCE CUT OFF VOLTAGE vs CHANNEL TEMPERATURE 3 0 Vos 10V Ip 1 mA Vaso Gate to Source Cut off Voltage V RDS on Drain to Source On state Resistance mQ 2 5 2 0 1 5 1 0 0 5 DRAIN TO SOURCE ON STATE RESISTANCE vs 0 50 100 150 Ten Channel Temperature C GATE TO SOURCE VOLTAGE 50 40 30 5 10
9. ts customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely To minimize risks of damage to property or injury including death to persons arising from defects in NEC semiconductor products customers must incorporate sufficient safety measures in their design such as redundancy fire containment and anti failure features NEC semiconductor products are classified into the following three quality grades Standard Special and Specific The Specific quality grade applies only to semiconductor products developed based on a customer designated quality assurance program for a specific application The recommended applications of a semiconductor product depend on its quality grade as indicated below Customers must check the quality grade of each semiconductor product before using it in a particular application Standard Computers office equipment communications equipment test and measurement equipment audio and visual equipment home electronic appliances machine tools personal electronic equipment and industrial robots Special Transportation equipment automobiles trains ships etc traffic control systems anti disaster Systems anti crime systems safety equipment and medical equipment not specifically designed for life support Specific Aircraft aerospace equipment submersible repeaters nuclear reactor control systems life support systems and medical equipment for l
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NEC 2SK3296 Manual