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QT OPTOELECTRONICS OPB862N51/OPB862N55 Manual

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Contents

1. AO PB862N 51E hy Fi _ SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB862N51 OPB862N55 The OPB862N series of switches is designed to allow the user maximum flexibility in applications Each switch consists of an infrared emitting diode facing an NPN phototransistor across a 125 3 18 mm gap A unique housing design provides a smooth external surface to prevent dust build up while molded internal apertures 485 12 32 give precise positioning and also provide protection from 110 2 79 ambient light interference 12 OPTICAL CENTERLINE 345 8 78 425 10 79 425 10 i DENTE CATION w Fully enclosed design allows dust and ambient light protection 320 8 13 m Lead spacing at 320 4 1 m 050 and 010 aperture options zt PCB mountable 3 2 250 6 36 020 0 51 022 0 57 022 0 57 SQ 4 PLCS 100 2 55 EMITTER 4 1 ANODE rw COLLECTOR 3 2 CATHODE T2161 NOTES 1 DIMENSIONS ARE IN INCHES mm 2 TOLERANCE IS 010 25 UNLESS OTHERWISE SPECIFIED 3 NUMBER INDICATES APERTURE SIZE 5 050 1 010 APERTURE OPTIONS LED PHOTOTRANSISTOR OPB862N51 050 010 OPB862N55 050 050 DPTOELECTRONICS Storage Temperature Operating Temperature Soldering Lead Temperature lron Lead Temperature Flow INPUT DIODE Continuous Forward Current Reverse Voltage Power Dissipation OUTPUT TRANSISTOR Collector Emitter Voltage Emitter Collector Voltage Power Dis
2. sipation PARAMETER INPUT DIODE Forward Voltage SYMBOL Reverse Leakage Current OUTPUT TRANSISTOR Emitter Collector Breakdown Collector Emitter Breakdown Collector Emitter Leakage MAX 1 70 100 SLOTTED OPTICAL SWITCH 40 C to 85 C 40 C to 85 C 240 C for 5 sec 239 260 C for 10 sec 2 ge TEST CONDITIONS Vh 2 0 V l 100 pA Ee 0 V lc 1 0 mA Ee 0 nA Voe 10 0 V Ee COUPLED On State Collector Current OPB862N51 lcron 1 8 l 20 mA Vee 0 6 V 1 8 OPB862N55 Icon Saturation Voltage Voesan 1 Derate power dissipation linearly 1 67 mW C above 2 RMA flux is recommended m m 3 Methanol or isopropyl alcohols are recommended as cleaning agents 4 Soldering iron tip 1 6 1 6 mm from housing A A I 20 MA V 0 6 V l 20 mA Io 1 8 mA

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