NXP - Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF Manual
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1. Fig 3 Switching times waveforms July 1998 o VBB Product specification BUS08AF Fig 4 Switching times definitions 150 v nominal adjust for ICsat Ne COOOOO Fig 5 Switching times test circuit bai 1 10 IC A Fig 6 Typical DC current gain hee f le parameter Vcg Rev 1 200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUS08AF VCESAT V i pl b b T i Ji Pa xa i nar eee 0 0 bE 07 0E 05 E 03 1 0E 01 0E 1 1 Ic A 10 t s Fig 7 Typical collector emitter saturation voltage Fig 10 Transient thermal impedance V sat f l parameter lo lg Zn ns F t parameter D t T VBESAT V Normalised Power Derating with heatsink cdmpa und2. N 20 40 60 80 100 120 140 2 3 B A 4 Ths C Fig 8 Typical base emitter saturation voltage Fig 11 Normalised power dissipation Vasat f I parameter I PD 100 Pp Pp 25c f Ths VCESAT V 10 A 2 0 1 1 IB A 10 Fig 9 Typical collector emitter saturation voltage Vosat f Ig parameter le July 1998 Rev 1 200 Philips Semiconductors Silicon Diffused Power Transistor r ICM max IC max 1 10 100 1000 VCE V Fig 12 Forward bias safe operating area T 25 C Region of permissible DC operation Il Extension for repetitive pulse operation NB Mounted with heatsink compound and 30 5 newton force on the centre of the envelope July 1998 Product specification BUS08AF ICM max IC max 1 10 100 1000 VCE V Fig 13 Forward bias safe operating area T 25 C Region of permissible DC operation Il Extension for rep
3. MAX UNIT Visol Repetitive peak voltage from all R H lt 65 clean and dustfree 2500 V three terminals to external heatsink Cisol Capacitance from T2 to external f 1 MHz 22 pF heatsink STATIC CHARACTERISTICS Ths 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TVP MAX UNIT 1 0 mA lees Collector cut off current Vse 0 V Voe Vcesmmax loes ae ein ce Vcesmmax lego Emitter cut off current Voeosus Collector emitter sustaining voltage Voesat Collector emitter saturation voltages BEsat Base emitter saturation voltage FE DC current gain DYNAMIC CHARACTERISTICS Ths 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP Transition frequency at f 5 MHz lo 0 1 A Vce 5 V Collector capacitance at f 1MHz Vcs 10 V lgm Turn off storage time Turn off fall time Switching times 16 kHz line losa 4 5 A L 1 MH C 4 nF deflection circuit lena 1 4 A Lg 6 WH Voe 4 V 25A ts t 1 Measured with half sine wave voltage curve tracer July 1998 2 Rev 1 200 Philips Semiconductors Silicon Diffused Power Transistor A o 50v 100 200R Horizontal Oscilloscope e ___ Vertical CJ 1R 6V i 30 60 Hz al Fig 1 Test circuit for Voeosust VCE V min VCEOsust Oscilloscope display for Verosust TRANSISTOR foe
4. Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF GENERAL DESCRIPTION High voltage high speed switching npn transistors in a fully isolated SOT199 envelope primarily for use in horizontal deflection circuits of colour television receivers QUICK REFERENCE DATA Collector emitter voltage peak value Vbe 0 V Collector emitter voltage open base Collector current DC Collector current peak value Total power dissipation Ths lt 25 G Collector emitter saturation voltage lo 4 5 A l 1 6 A Collector saturation current f 16 kHz Fall time lesa 4 5 A f 16kHz PIN CONFIGURATION SYMBOL DESCRIPTION base collector emitter isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System IEC 134 Collector emitter voltage peak value Collector emitter voltage open base Collector current DC Collector current peak value Base current DC Base current peak value Total power dissipation Storage temperature Junction temperature Junction to heatsink without heatsink compound PE 3 7 Junction to heatsink with heatsink compound 28 KW Junction to ambient nre s w July 1998 1 Rev 1 200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF ISOLATION LIMITING VALUE amp CHARACTERISTIC Ths 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN vP
5. etitive pulse operation NB Mounted without heatsink compound and 30 5 newton force on the centre of the envelope Rev 1 200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF MECHANICAL DATA Dimensions in mm 15 3 max 3 1 3 3 Net Mass 5 5 g seating plane 3 5 max not tinned Fig 14 SOT199 The seating plane is electrically isolated from all terminals Notes 1 Refer to mounting instructions for F pack envelopes 2 Epoxy meets UL94 VO at 1 8 July 1998 6 Rev 1 200 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF DEFINITIONS Data sheet status This data sheet contains target or goal specifications for product development This data sheet contains preliminary data supplementary data may be published later This data sheet contains final product specifications Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied Exposure t
6. o limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification Philips Electronics N V 1998 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract it is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or systems where malfunction of these products can be reasonably expected to result in personal injury Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale July 1998 7 Rev 1 200
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NXP Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508AF Manual