kexin N-Channel PowerTrench MOSFET FDN5630 Manual
Contents
1. DAES RAGA GME Aman BAERS SMD Type MOSFET N Channel PowerTrench MOSFET FDN5630 E Features vos V 60V Ros on lt 100 mO Ves 10V Unit mm Ros on lt 120 mO Ves 6V Optimized for use in high frequency DC DC converters Low gate charge Very fast switching y 1 1 Gate jl 2 Source z4 E r alg 3 Drain E Absolute Maximum Ratings Ta 25 C Drain curent Continuous Pulsed Power dissipation Maximum Junction to Ambient Junction and storage temperature range 55 to 150 EX IN www kexin com cn MOSFET SMD Type N Channel PowerTrench MOSFET FDN5630 E Electrical Characteristics Ta 25 C Parameter Drain source Breakdown voltage Breakdown Voltage Temperature Coefficient Static drain source on resistance O o z4 o e 3 D o o Qa lt e o Q oO Gate source reverse leadage Total Gate Charge Gate Source Charge Gate Drain Charge Turn on delay time ta Rise time Turn off delay time ta Fall time Input capacitance fs ol r off i S t t l Maximum Continuous Drain Source Diode Forward Current Forward Transconductance Gate source leakage current Gate source forward leadage Output capacitance Reverse transfer capacitance Diode forward voltage Min e O E O BE O aE a_i a oa O O ri ee ari i Min2. 3 lt Vps 20V Ves 10V ID 1 7A Vop 30 V ID 1A Ves 10 V RGEN 6 Q Lae a EA Ea Zs a fo k q gt Ves 0V Is 0 42A KE XIN www kexin com cn
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kexin N Channel PowerTrench MOSFET FDN5630 Manual