FAIRCHILD FDN352AP Single P-Channel PowerTrench MOSFET Manual(2)
Contents
1. Figure 1 On Region Characteristics Roson NORMALIZED DRAIN SOURCE ON RESISTANCE 50 25 0 25 50 75 100 125 150 T JUNCTION TEMPERATURE C Figure 3 On Resistance Variation with Temperature 10 lp5 DRAIN CURRENT A 1 2 3 4 5 6 7 8 Vgs GATE TO SOURCE VOLTAGE V Figure 5 Transfer Characteristics Figs NORMALIZED DRAIN SOURCE ON RESISTANCE lp DRAIN CURRENT A Figure 2 On Resistance Variation with Drain Current and Gate Voltage 0 7 E o ad i T 125 C 0 3 Rosi ON RESISTANCE OHM o P 0 1 2 4 6 8 10 Vgs GATE TO SOURCE VOLTAGE V Figure 4 On Resistance Variation with Gate to Source Voltage 100 Vas OV lt 10 Z W tr 4 1 3 E T 125 C z lt E 0 a 25 C Ww 2 oo g wW ur u 55 C Ww 0 001 E 0 0001 0 0 0 2 0 4 0 6 0 8 1 0 12 14 Vsp BODY DIODE FORWARD VOLTAGE V Figure 6 Body Diode Forward Voltage Variation with Source Current and Temperature FDN352AP Rev C1 www fairchildsemi com LAASOW gu2ua1 1eMog JauueYd d ajbuls dvzceNQJ Typical Characteristics 10 Vas GATE SOURCE VOLTAGE2. V 0 0 5 1 1 5 2 2 5 3 Q GATE CHARGE nC Figure 7 Gate Charge Characteristics CAPACITANCE pF 200 a o Q o a o f 1 MHz Veg 20V oss 5 10 15 20 25 30 Vps DRAIN TO SOURCE VOLTAGE V Figure 8 Capacitance Characteristics 50 p SINGLE PULSE Roya 270 C W m 40 Ta 25 C z E a E 30 E amp 2 o z E z Ei 20 x i x a Vag 10V lt E SINGLE PULSE u 6 Rega 270 C W T 25 C x 0 0 1 1 10 100 0 0001 0 001 0 01 0 1 1 10 100 1000 Vps DRAIN SOURCE VOLTAGE V t TIME sec Figure 9 Maximum Safe Operating Area Figure 10 Single Pulse Maximum Power Dissipation Ww E 1 Z lt D 0 5 E 9 2 0 2 Roya t r t R
3. DABS RAR MSs MAU MRE PERGGEERIXGIUNCUNCHESUESSI FAIRCHILD tl SEMICONDUCTOR FDN352AP August 2005 Single P Channel PowerTrench MOSFET Features WB 1 3 A 30V Rps oN 180 mQ Ves 10V 1 1 A 30V Rps oN 300 MQ Ves 4 5V W High performance trench technology for extremely low Rps on W High power version of industry Standard SOT 23 package Identical pin out to SOT 23 with 3096 higher power handling capability Applications W Notebook computer power management General Description This P Channel Logic Level MOSFET is produced using Fair child Semiconductor advanced Power Trench process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching perfor mance These devices are well suited for low voltage and battery pow ered applications where low in line power loss is needed in a very small outline surface mount package G SuperSOT 3 Absolute Maximum Ratings T 25 C unless otherwise noted LAASOW 49U34L1 MOd JauUeYd d ajbuls dvZSeNds Symbol Parameter Ratings Units Vpss Drain Source Voltage 30 V Vass Gate Source Voltage 25 V Ip Drain Current Continuous Note 1a 1 3 A Pulsed 10 Pp Power Dissipation for Single Operation Note 1a 0 5 Ww Note 1b 0 46
4. Ty Tera Operating and Storage Junction Temperature Range 55 to 4150 C Thermal Characteristics Rosa Thermal Resistance Junction to Ambient Note 1a 250 C W Rouc Thermal Resistance Junction to Case Note 1 75 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 52AP FDN352AP 7 8mm 3000 units 2005 Fairchild Semiconductor Corporation 1 www fairchildsemi com FDN352AP Rev C1 Electrical Characteristics T 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVpss Drain Source Breakdown Voltage Ves 0 V lp 250 uA 30 V ABVpss Breakdown Voltage Temperature Coefficient lp 250 uA Referenced to 25 C 17 mV C AT Ipss Zero Gate Voltage Drain Current Vps 24 V Veg 0V 1 uA lass Gate Body Leakage Ves 25 V Vps OV 100 nA On Characteristics Note 2 Vas th Gate Threshold Voltage Vps Ves lp 250 uA 0 8 20 25 V AVestth Gate Threshold Voltage Ip 250 uA Referenced to 25 C 4 mV C ATJ Temperature Coefficient Rps on Static Drain Source Ves 2 10V lp 1 3A 150 180 mQ On Resistance Ves 4 5 V Ip 1 1A 250 300 Vas 4 5 V Ip 1 1 A Ty 125 C 330 400 grs Forward Transconductance Vps 5 V Ip 0 9A 2 0 S Dynamic Characteristics Ciss Input C
5. apacitance Vps 15 V Veg OV f 1 0 MHz 150 pF Coss Output Capacitance 40 pF Criss Reverse Transfer Capacitance 20 pF Switching Characteristics Note 2 ta on Turn On Delay Time Vpp 7 10 V lp 2 71A 4 8 ns t Turn On Rise Time Vas 5 10 Agen 6 Q 15 28 ns taoff Turn Off Delay Time 10 18 ns In Turn Off Fall Time 1 2 ns Qy Total Gate Charge Vps 10V lp 0 9 A 1 4 1 9 nC Qgs Gate Source Charge Vas 4 5 V 0 5 nC Qga Gate Drain Charge 0 5 nC Drain Source Diode Characteristics and Maximum Ratings ls Maximum Continuous Drain Source Diode Forward Current 0 42 A Vsp Drain Source Diode Forward Voltage Ves OV 1g 0 42A Note 2 0 8 1 2 V trr Diode Reverse Recovery Time lp 3 9 A 17 ns Qr Diode Reverse Recovery Charge dip dt 100 Als 7 nC Notes 1 Roya is the sum of the junction to case and case to ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins Rgjc is guaranteed by design while Raja is determined by the user s board design a RgjA 250 C W when mounted on a 0 02 in pad of 2oz copper b Roya 270 C W when mounted on a 0 001 in pad of 2oz copper 2 Pulse Test Pulse Width lt 300us Duty Cycle lt 2 0 FDN352AP Rev C1 www fairchildsemi com LAASOW gu2ue1j1oMog JauUeYd d ajbulsg dvzceNQJ Typical Characteristics 10 Ipp DRAIN CURRENT A Vps DRAIN TO SOURCE VOLTAGE V
6. hange in any manner without notice Preliminary First Production This datasheet contains preliminary data and supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design No Identification Needed Full Production This datasheet contains final specifications Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor The datasheet is printed for reference information only Rev 116 5 www fairchildsemi com FDN352AP Rev C1 LAASOW gu2ue1 1oMog JauueYd d ajbuls dvzceNQJ
7. ld f POP SuperFET The Power Franchise Programmable Active Droop dico steer PowerEdge SuperSOT 6 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or 2 A critical component is any component of a life systems which a are intended for surgical implant into support device or system whose failure to perform can the body or b support or sustain life or c whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system or to affect its safety or with instructions for use provided in the labeling can be effectiveness reasonably expected to result in significant injury to the user PRODUCT STATUS DEFINITIONS Definition of Terms Advance Information Formative or This datasheet contains the design specifications for In Design product development Specifications may c
8. oja te 01 L 01 Reya 270 C W iu t ad E 0 05 i Nz 6 02 pk 2 E 0 01 Y tl SF 0 01 b cr g mm Ts Ta P Ret ag SINGLE PULSE Duty Cycle D t1 t2 zz q f 0 001 0 0001 0 001 0 01 0 1 1 10 100 1000 t TIME sec Figure 11 Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1c Transient thermal response will change depending on the circuit board design FDN352AP Rev C1 www fairchildsemi com LAASOW gu2ue1j1oMog jeuueu2 qd ajbulsg dvzceNQJ TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks ACEx FAST ISOPLANAR PowerSaver SuperSOT 8 ActiveArray FASTr LitleFET PowerTrench SyncFET Bottomless Fpgrw MICROCOUPLER QFET TinyLogic Build it Now FRFET MicroFET Qs TINYOPTO CoolFET GlobalOptoisolator MicroPak QT Optoelectronics TruTranslation CROSSVOLT GTO MICROWIRE Quiet Series UHC DOME HiSeC MSX RapidConfigure UltraFET EcoSPARK Ie MSXPro RapidConnect UniFET E CMOS i Lo OCX uSerDes VCX EnSigna ImpliedDisconnect OCXPro SILENT SWITCHER Wire FACT IntelliMAX OPTOLOGIC SMART START FACT Quiet Series OPTOPLANAR SPM PACMAN Stealth Across the board Around the wor
Download Pdf Manuals
Related Search
FAIRCHILD FDN352AP Single P Channel PowerTrench MOSFET Manual(2)