FAIRCHILD FQPF1N60 Manual
Contents
1. 2000 Fairchild Semiconductor International Rev A April 2000 09N LJd04 FQPF1N60 Package Dimensions TO 220F 10 16 020 93 18 0 10 2 54 0 20 zn 7 00 f S 7 00 0 70 eo o gt E amp d Fi o amp F N 8 o e 1 00x45 5 o LO MAX1 47 8 Fi vol 0 80 0 10 c o s i 1 0 35 0 10 0 10 4 0 507505 _ 2 76 020 2 5ATYP 2 5ATYP 2 54 0 20 2 54 0 20 S Fi 9 40 0 20 Z N S 4 _ 2000 Fairchild Semiconductor International Rev A April 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks ACEx HiSeCTM SuperSOT 8 Bottomless ISOPLANAR SyncFET CoolFET MICROWIRE TinyLogic CROSSVOLT POP UHC E CMOS PowerTrench VCX FACT QFET FACT Quiet Series Qs FAST Quiet Series FASTr SuperSOT 3 GTO SuperSOT 6 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS LIFE SUPPORT POLI2. lp 0 45A k Q On Resistance as D ii s grs Forward Transconductance Vps 50 V Ip 20 45 Note4 0 8 Dynamic Characteristics Ciss Input Capacitance Vos 25 V Vas 0 V 120 150 pF Coss Output Capacitance f21 0MHz 20 25 pF Cras Reverse Transfer Capacitance 3 4 pF Switching Characteristics ta on Turn On Delay Time Vop 300 V Ip 1 2 A 5 20 ns tr Turn On Rise Time Re 25Q B 25 60 ns la oft Turn Off Delay Time d 25 ns ty Turn Off Fall Time pae se 25 60 ns Qy Total Gate Charge Vos 480 V Ip 1 2 A 5 6 nC Qgs Gate Source Charge Vas 10V 1 nC Qga Gate Drain Charge Note 4 5 2 6 nC Drain Source Diode Characteristics and Maximum Ratings ls Maximum Continuous Drain Source Diode Forward Current 0 9 A Ism Maximum Pulsed Drain Source Diode Forward Current 3 6 A Vsp Drain Source Diode Forward Voltage Vas 0 V lg 0 9 A 3 m 14 V trr Reverse Recovery Time Ves 0 V lg 1 2A 160 ns Qrr Reverse Recovery Charge dir dt 100 A us Note 4 0 3 E uC Notes 2000 Fairchild Semic onductor International Rev A April 2000 09NLHdOJ FQPF1N60 Top Typical Characteristics V 150 100V 80V 70V p Drain Current A Rison 2 i B Drain Source On Resistance 65V 60V Bottom 55V a 10 10 10 V S Drain Source Voltage V Figure 1 On Region Characteristics 0 0 05 10 15 20 25
3. 00 R Normalized Drain Source On Resistance p Drain Current A 30 257 0 0 i i i i i 100 50 0 50 100 150 200 T Junction Temperature C Figure 8 On Resistance Variation vs Temperature 0 00 i i i 25 50 75 100 125 150 T Case Temperature C Figure 10 Maximum Drain Current vs Case Temperature Notes 1 Z solt 5 95 C W Max 2 Duty Factor D t t Z Hur Thermal Response single pulse 10 107 10 t Square Wave Pulse Duration sec Figure 11 Transient Thermal Response Curve 2000 Fairchild Semiconductor International Rev A April 2000 O9N 1d01 FQPF1N60 Gate Charge Test Circuit amp Waveform Same Type as DUT Charge 90 10 GS der t ton Unclamped Inductive Switching Test Circuit amp Waveforms TuS BVpss bx BYoss Von BVoss las Ip t Von Vos t e i Time 2000 Fairchild Semiconductor International Rev A April 2000 Peak Diode Recovery dv dt Test Circuit 8 Waveforms Same Type as DUT e dv dt controlled by Re Isp controlled by pulse period Gate Pulse Width Ves Gate Pulse Period Driver lu Body Diode Forward Current Isp DUT di dt lam Body Diode Reverse Current Body Diode Recovery dv dt Body Diode Forward Voltage Drop
4. CY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL As used herein result in significant injury to the user 1 Life support devices or systems are devices or systems 2 A critical component is any component of a life support which a are intended for surgical implant into the body device or system whose failure to perform can be or b support or sustain life or c whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system or to affect its safety or effectiveness provided in the labeling can be reasonably expected to PRODUCT STATUS DEFINITIONS Definition of Terms Advance Information Formative or In This datasheet contains the design specifications for Design product development Specifications may change in any manner without notice Preliminary First Production This datasheet contains preliminary data and supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design No Identification Needed Full Production This datasheet contains final specifications Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design Obsolete Not In Prod
5. DABS BASH FQPF1N60 ER MARGA MACE AAA FAIRCHILD AAA SEMICONDUCTOR m FQPF1N60 600V N Channel MOSFET General Description These N Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary planar stripe DMOS technology This advanced technology has been especially tailored to minimize on state resistance provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode These devices are well suited for high efficiency switch mode power supply April 2000 QFET Features 0 9A 600V Ros on 11 52 Vos 10 V Low gate charge typical 5 0 nC Low Crss typical 3 0 pF Fast switching 10096 avalanche tested Improved dv dt capability TO 220F FQPF Series Absol ute Maxi mum Rati ngs Tg 25 C unless otherwise noted Parameter Drain Source Voltage Symbol Voss FQPF1N60 600 lp Drain Current Continuous Tc 25 C Continuous T 100 C 0 9 0 57 lpm Drain Current Pulsed 3 6 Gate Source Voltage 30 Single Pulsed Avalanche Energy 50 Avalanche Current 0 9 Repetitive Avalanche Energy 2 1 Peak Diode Recovery dv dt 4 5 Power Dissipation Tc 25 C Derate above 25 C 21 0 17 Operating and Storage Temperature Range 55 to 150 1 8 from case for 5 seconds Maximum lead t
6. Drain Current A Figure 3 On Resistance Variation vs Drain Current and Gate Voltage C C C C shorted i Me Drain Source Voltage V Figure 5 Capacitance Characteristics Eg t D 3 25 C a E 3 lt Notes 1 V 50V 2 250 us Pulse Test 10 2 4 6 8 10 Ma Gate Source Voltage V Figure 2 Transfer Characteristics 5 10 3 O 8 E 150 C 250 Notes 1 V 0V 2 2504s Pulse Test 107 1 1 1 L L L 02 0 4 0 6 0 8 1 0 12 14 1 6 Va Source Drain Voltage V Figure 4 Body Diode Forward Voltage Variation vs Source Current and Temperature 12 Vos 120V 10F M B0V A Vos 480V Ser e S 8 t T 3 H PRI 8 gt X Note 1 2A L L L 2 3 4 5 Q Total Gate Charge nC Figure 6 Gate Charge Characteristics 2000 Fairchild Semiconductor International Rev A April 2000 Typical Characteristics continued T Junction Temperature C Figure 7 Breakdown Voltage Variation vs Temperature T Operation in This Area Ez i is Limited by R po p Drain Current A Notes 1 T 25 C 2 T 150 3 Single Pulse 10 10 10 Ma Drain Source Voltage V Figure 9 Maximum Safe Operating Area 1 2 1 1 fp NZ 5 10F 8 Bos F 3 lt Notes E 1 Vs 0V B 21 250 A 08 100 50 0 50 100 150 2
7. emperature for soldering purposes 300 Thermal Characteristics Symbol Parameter Rejc Thermal Resistance Junction to Case ReJA Thermal Resistance Junction to Ambient 2000 Fairchild Semiconductor International Rev A April 2000 Electrical Characteristics Tc 25 C unless otherwise noted 4 Pulse Test Pulse width lt 300us Duty cycle lt 2 5 Essentially independent of operating temperature 1 Repetitive Rating Pulse width limited by maximum junction temperature 2 L 113mH las 0 9A Vpp 50V Ra 25 Q Starting Ty 25 C 3 Isp lt 1 2A di dt lt 200A us Von lt Bees Starting Ty 25 C Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVpss Drain Source Breakdown Voltage Ves 0 V Ip 250 HA 600 V ABV DSS Breakdown Voltage Temperature lp 250 LA Referenced to 25 C n 0 4 Viet AT Coefficient Ipss Vos 600 V Vas 0 V m 10 LA Zero Gate Voltage Drain Current Vos 480 V Te 125 C E 100 uA lassr Gate Body Leakage Current Forward Vas 30 V Vis 0 V 100 nA lassr Gate Body Leakage Current Reverse Vas 30 V Vis OV 100 nA On Characteristics Vase Gate Threshold Voltage Vos Vas lp 250 HA 3 0 5 0 Rps on Static Drain Source Ves 10V
8. uction This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor The datasheet is printed for reference information only 2000 Fairchild Semiconductor International Rev A January 2000
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FAIRCHILD FQPF1N60 Manual