FAIRCHILD FQPF9N30 handbook
Contents
1. Figure 1 On Region Characteristics 25 m o T a T o T X Note T 25 00 i i i i 0 6 12 18 24 30 Drain Current A Figure 3 On Resistance Variation vs Drain Current and Gate Voltage 1200 G C Cy G Shorted 1000 E Vg Drain Source Voltage V Figure 5 Capacitance Characteristics o Ip Drain Current A lor Reverse Drain Current A 2 250 us Pulse Test i 8 10 Vos Gate Source Voltage V Figure 2 Transfer Characteristics 3 Notes L DO i 1 Vg 0V 2 250 us Pulse Test 107 L L l L L L 0 2 0 4 0 6 0 8 10 12 14 16 18 Vso Source Drain voltage V Figure 4 Body Diode Forward Voltage Variation vs Source Current and Temperature 12 V 60V or V 150V Sg Vps 240V e Sr S Ke gt st 8 82 gt Note 9 0A i i i i i 0 3 6 9 12 15 18 Q Total Gate Charge nC Figure 6 Gate Charge Characteristics 2000 Fairchild Semiconductor International Rev A May 2000 Typical Characteristics continued 12 8 14h 93 5 10r 28 8g amp 3 o9 3 Notes 2 8 08 i L L 1 100 50 0 50 100 150 200 T Junction Temperature C Figure 7 Breakdown Voltage Variation vs Temperature 10 E Operation in This Area E is Limited by R js2. 5 3 e E BS Lr a L 10 3 Notes E 1 T 25 C H 2 7 150 C r 3 Single Pulse gt 10 10 10 10 Vg Drain Source Voltage V Figure 9 Maximum Safe Operating Area Roson Normalized Drain Source On Resistance 3 0 25 20 05 A Ip Drain Current A T Junction Temperature C 50 150 200 Figure 8 On Resistance Variation vs Temperature Te Case Temperature C i 75 100 i 125 150 Figure 10 Maximum Drain Current vs Case Temperature Notes 1 Z solt 2 98 esc C W Max 2 Duty Factor D t t 3 Ty To Pow Zo solt Z Di hem al Response single pulse 10 10 Pow 107 10 t Square W ave Pulse Duration sec Figure 11 Transient Thermal Response Curve 2000 Fairchild Semiconductor International Rev A May 2000 OEN64d04 FQPF9N30 Gate Charge Test Circuit amp Waveform Same Type as DUT 12V Charge Resistive Switching Test Circuit amp Waveforms 90 10 Hd cm t on E t off Unclamped Inductive Switching Test Circuit amp Waveforms ar BVpss up TE BVpss Voo BVpss las Ip t Vpp Vps t 2000 Fairchild Semiconductor International Rev A May 2000 Peak Diode Recovery dv dt Test Circuit amp Waveforms Same Type as DUT Von e dv dt controlled by
3. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or 2 A critical component is any component of a life Systems which a are intended for surgical implant into support device or system whose failure to perform can the body or b support or sustain life or c whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system or to affect its safety or with instructions for use provided in the labeling can be effectiveness reasonably expected to result in significant injury to the user PRODUCT STATUS DEFINITIONS Definition of Terms Advance Information Formative or This datasheet contains the design specifications for In Design product development Specifications may change in any manner without notice Preliminary First Production This datasheet contains preliminary data and supp
4. Maximum lead temperature for soldering purposes 300 Thermal Characteristics Symbol Parameter Bac Thermal Resistance Junction to Case Rosa Thermal Resistance Junction to Ambient 2000 Fairchild Semiconductor International Rev A May 2000 Electrical Characteristics Tc 25 C unless otherwise noted 4 Pulse Test Pulse width lt 300us Duty cycle lt 2 5 Essentially independent of operating temperature 1 Repetitive Rating Pulse width limited by maximum junction temperature 2 L 19 4mH las 6 0A Vpp 50V RG 25 Q Starting Ty 25 C 3 Isp 9 0A di dt lt 200A us Vpp lt BVpss Starting Ty 25 C Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVpss Drain Source Breakdown Voltage Ves 0 V Ip 250 uA 300 V ABVpss Breakdown Voltage Temperature Ip 250 uA Referenced to 25 C E I AT Coefficient D S 0 28 VIG Joes Vps 300 V Vas 0 V z 1 uA Zero Gate Voltage Drain Current Vos 240 V Tc 125 C E 10 hA lessF Gate Body Leakage Current Forward Vas 30 V Vps 0 V 100 nA lassr Gate Body Leakage Current Reverse Vas 30 V Vps 0 V 100 nA On Characteristics Vesith Gate Threshold Voltage Vps Vas lp 250 uA 3 0 5 0 Rps on St
5. DABS RAB FQPF9N30 Mam ARMA MMAR FAIRCHILD WEE SEMICONDUCTOR m FQPF9N30 300V N Channel MOSFET General Description These N Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary planar stripe DMOS technology This advanced technology has been especially tailored to minimize on state resistance provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode These devices are well suited for high efficiency switching DC DC converters switch mode power supply May 2000 QFET Features e 6 0A 300V Rps on 0 459 Vcs 10 V Low gate charge typical 17 nC Low Crss typical 16 pF Fast switching 100 avalanche tested Improved dv dt capability TO 220F FQPF Series Absol ute Maxi mum Rati ngs Tc 25 C unless otherwise noted Parameter Drain Source Voltage Symbol Vpss FQPF9N30 300 Continuous Tc 25 C Continuous Tc 100 C Ip Drain Current 6 0 3 8 Ipm Drain Current Pulsed 24 Gate Source Voltage 30 Single Pulsed Avalanche Energy 420 Avalanche Current 6 0 Repetitive Avalanche Energy 4 2 Peak Diode Recovery dv dt 4 5 Power Dissipation Tc 25 C Derate above 25 C 42 0 34 Operating and Storage Temperature Range 55 to 150 1 8 from case for 5 seconds
6. Re Isp controlled by pulse period Gate Pulse Width Vas Free ea ee aie regres Gate Pulse Period Driver lem Body Diode Forward Current Isp DUT di dt la Body Diode Reverse Current Vos DUT Body Diode Recovery dv dt Body Diode Forward Voltage Drop 2000 Fairchild Semiconductor International Rev A May 2000 OEN64d04 FQPF9N30 Package Dimensions TO 220F 10 16 0 20 3 18 0 10 2 54 10 20 o 7 00 0 70 m f La s t s ea Xa I g E 8 o S e Ti N S co 3 1 00x45 i eo ceo 15 MAX1 47 8 3 Lo 0 80 0 10 o Q O e 1 0 35 0 10 0 10 as 0 50 9 05 11 _ 2 76 0 20 2 54TYP 2 54TYP 2 54 0 20 2 54 0 20 a 8 9 40 0 20 D lt s d 2000 Fairchild Semiconductor International Rev A May 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks ACEx FASTr QFET VCX Bottomless GlobalOptoisolator Qs CoolFET GTO QT Optoelectronics CROSSVOLT HiSeC Quiet Series DOME ISOPLANAR SuperSOT 3 E CMOS MICROWIRE SuperSOT 6 EnSigna OPTOLOGIC SuperSOT 8 FACT OPTOPLANAR SyncFET FACT Quiet Series FORT TinyLogic FAST PowerTrench UHC
7. atic Drain Source Ves 10 V Ip 2 3 0 A S On Resistance 9s u 0 35 On Ors Forward Transconductance Vps 50 V Ip 3 0 A Note 4 4 2 E Dynamic Characteristics Ciss Input Capacitance Vps 25 V Veg 0 V 570 740 pF Coss Output Capacitance f 1 0 MHz 120 155 pF Criss Reverse Transfer Capacitance 16 20 pF Switching Characteristics la on Turn On Delay Time Vpp 150 V Ip 9 0 A 16 40 ns t Turn On Rise Time Rg 250 120 250 ns la oft Turn Off Delay Time 27 65 ns ti Turn Off Fall Time bo MER 48 110 ns Qg Total Gate Charge Vps 240 V Ip 9 0 A KS 17 22 nC Qgs Gate Source Charge Veg 10V 3 9 nC Qga Gate Drain Charge Note 4 5 9 2 a nc Drain Source Diode Characteristics and Maximum Ratings ls Maximum Continuous Drain Source Diode Forward Current 6 0 A lsm Maximum Pulsed Drain Source Diode Forward Current 24 A Vsp Drain Source Diode Forward Voltage Ves 0 V Is 6 0 A 1 5 V trr Reverse Recovery Time Ves 0 V Is 9 0 A 170 ns Qr Reverse Recovery Charge dle dt 100 A us Note 4 s 14 m uC Notes 2000 Fairchild Semiconductor International Rev A May 2000 OEN64d04 FQPF9N30 Typi cal Characteristics K 150V Capacitance pF Ip Drain Current A Rsm 2 Drain Source On Resistance a T X Notes 1 250 15 Pulse Test 2 T 250 l 10 10 10 Vg Drain Source Voltage V
8. lementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design No Identification Needed Full Production This datasheet contains final specifications Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor The datasheet is printed for reference information only
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FAIRCHILD FQPF9N30 handbook