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FAIRCHILD FQPF7N20 Manual (1)(1)

1. 00 o T Junction Temperature C Figure 7 Breakdown Voltage Variation vs Temperature 10 E Operation in This Area E is Limited by Rago 7 10 E z Zt z gt Bo sx ERE O 10 E E E fal L a t 40 gt Mtas E dem 1 T 25 C E 2 T 150 H 3 Single Pulse 10 10 10 10 Figure 9 Maximum Safe Operating Area Ip Drain Current A 3 0 25 20 j 15 H 10 L 05 H 0 0 i i i i i 100 50 0 50 100 150 200 T Junction Temperature C Figure 8 On Resistance Variation vs Temperature 6 ES w N 0 i i i i 25 50 75 100 125 150 T Case Temperature C Figure 10 Maximum Drain Current vs Case Temperature EG Notes 1 Z selt 3 38 C W Max 2 Duty Factor D t t 3 Tim Te Pow Zo selt 5 F p L c L o ED 0 5 a n o o 10 ES Y o z E 0 1 E E o F 0 05 E m E Zo o N 40 10 single pulse 10 102 107 10 10 t Square Wave Pulse Duration sec Figure 11 Transient Thermal Response Curve 2000 Fairchild Semiconductor International Rev A April 2000 O2NZ4d04 FQPF7N20 Gate Charge Test Circuit amp Waveform Charge Resistive Switching Test Circuit 8 Waveforms 90 10 GS den Te hs tar Unclamped Inductive Switching Test Circuit amp Waveforms E DER BVoss 572 75 Boss Vp BVoss las Ip
2. DABS BRAGA FQPF7N20 Masi MARGA HYRET AAA FAIRCHILD Er SEMICONDUCTOR m FQPF7N20 200V N Channel MOSFET General Description These N Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary planar stripe DMOS technology This advanced technology has been especially tailored to minimize on state resistance provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode These devices are well suited for high efficiency switching DC DC converters switch mode power supply DC AC converters for uninterrupted power supply motor control April 2000 QFET Features 4 8A 200V Rogion 0 692 Vas 10 V Low gate charge typical 8 0 nC Low Crss typical 9 0 pF Fast switching 100 avalanche tested Improved dv dt capability TO 220F FQPF Series Absol ute Maximu m Ratings To 25 C unless otherwise noted Symbol Parameter Voss Drain Source Voltage FQPF7N20 200 Ip Drain Current Continuous Tc 25 C Continuous Tc 100 C 4 8 3 0 IDM Drain Current Pulsed 19 2 Gate Source Voltage 30 Single Pulsed Avalanche Energy 73 Avalanche Current 4 8 Repetitive Avalanche Energy 3 7 Peak Diode Recovery dv dt 5 5 Power Dissipation Tc 25 C Derate above 25 C 37 0 3 Operating and Sto
3. Quiet Series QSTM FASTO Quiet Series FASTr SuperSOT 3 GTO SuperSOT 6 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL As used herein result in significant injury to the user 1 Life support devices or systems are devices or systems 2 A critical component is any component of a life support which a are intended for surgical implant into the body device or system whose failure to perform can be or b support or sustain life or c whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system or to affect its safety or effectiveness provided in the labeling can be reasonably expected to PRODUCT STATUS DEFINITIONS Definition of Terms Advance Information Formative or In This datasheet contains the design specifications for Design product development Specifications may change in any manner without
4. Threshold Voltage Vos Ves lp 250 pA 3 0 5 0 V Rps on Static Drain Source Ves 10V Ip 2 4A f On Resistance Ge p Oise 0 69 Q 9rs Forward Transconductance Vos 40V lp 2 4 A Note 4 3 4 Dynamic Characteristics Ciss Input Capacitance Vos 25 V Veg 0 V 300 400 pF Coss Output Capacitance f 1 0 MHz 60 75 pF Cras Reverse Transfer Capacitance 9 12 pF Switching Characteristics ta on Turn On Delay Time Vpn 100 V Ip 6 6 A 8 25 ns t Turn On Rise Time Re 250 65 140 ns ta off Turn Off Delay Time 15 40 ns tr Turn Off Fall Time TS 35 80 ns Qy Total Gate Charge Vps 160 V Ip 6 6 A 8 0 10 nC Qgs Gate Source Charge Ves 10 V 2 4 nc Qga Gate Drain Charge Note 4 5 3 3 nC Drain Source Diode Characteristics and Maximum Ratings Is Maximum Continuous Drain Source Diode Forward Current 4 8 A lsm Maximum Pulsed Drain Source Diode Forward Current 19 2 A Vsp Drain Source Diode Forward Voltage Ves 0 V I 4 8 A 1 5 V tr Reverse Recovery Time Ves 0 V lg 6 6 A 115 ns Qr Reverse Recovery Charge dle dt 100 A us Note4 _ 0 51 z uC Notes 2000 Fairchild Semic onductor International Rev A April 2000 0cNZ3dOJ FQPF7N20 Typical Characteristics Vos 10 Top 15V ee E 3 ap T 10 gt X Notes 1 2501 s Pulse Test 2 7 250 10 i 10 10 10 Vps Drain Source
5. Voltage V Figure 1 On Region Characteristics 4 0 35r Rosen a Drain Source On Resistance N o 15r 10r esr X Note T 250 00 i i i i 0 3 6 9 12 15 Drain Current A Figure 3 On Resistance Variation vs Drain Current and Gate Voltage ys Cy Shorted Cy T i Bod 2 o B Notes 1 V_ 0V s S d 2 f 1MHz V_ Drain Source Voltage V Ds Figure 5 Capacitance Characteristics 10 T 5 150 dq i 25 C i a BNET E 3 Notes 1 Vy 40V 2 2501 s Pulse Test 10 t E 2 4 6 8 10 Vos Gate Source Voltage V Figure 2 Transfer Characteristics 10 T 5 5 o P 10 c amp 150077 een ios i A som 2 250u s Pulse Test 10 1 L L L 02 04 0 6 0 8 1 0 12 14 V Source Drain Voltage V Figure 4 Body Diode Forward Voltage Variation vs Source Current and Temperature 12 10 E 6 3 8 Bol gt X Note 6 6A 0 i i i 0 2 4 6 8 10 Q Total Gate Charge nC Figure 6 Gate Charge Characteristics 2000 Fairchild Semiconductor International Rev A April 2000 Typical Characteristics Vps Drain Source Voltage V Continued 12 11 g ZO F gS By Eg 28 SE g amp 3 09 X Notes a 3 1 V 0V B 2 1 2804A a 08 i 1 i i i 100 50 0 50 100 150 2
6. notice Preliminary First Production This datasheet contains preliminary data and supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design No Identification Needed Full Production This datasheet contains final specifications Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor The datasheet is printed for reference information only 2000 Fairchild Semiconductor International Rev A January 2000
7. rage Temperature Range 55 to 150 1 8 from case for 5 seconds Maximum lead temperature for soldering purposes 300 Thermal Characteristics Symbol Parameter Roc Thermal Resistance Junction to Case Raya Thermal Resistance Junction to Ambient 2000 Fairchild Semiconductor International Rev A April 2000 Electrical Characteristics Tc 25 C unless otherwise noted 3 Isp 6 6A 4 Pulse Test di dt lt 300A us Vpp lt BVpss Starting Ty 25 C Pulse width lt 300us Duty cycle lt 2 5 Essentially independent of operating temperature 1 Repetitive Rating Pulse width limited by maximum junction temperature 2 L 4 8mH las 4 8A Vpp 50V Rg 25 Q Starting Ty 25 C Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVpss Drain Source Breakdown Voltage Ves 0 V lp 250 uA 200 z V ABVpss Breakdown Voltage Temperature Ip 250 A Ref d to 25 C x I AT Coefficient D a MR Det ve Vps 200 V Veg 0 V 1 A DSS Zero Gate Voltage Drain Current VE 460 V E 125 C 10 a lessr Gate Body Leakage Current Forward Ves 30 V Vps 0V 100 nA lessr Gate Body Leakage Current Reverse Vas 30 V Vpg 0 V 100 nA On Characteristics Vesith Gate
8. t Vop Vos t 2000 Fairchild Semiconductor International Rev A April 2000 Peak Diode Recovery dv dt Test Circuit amp Waveforms Same Type as DUT e dv dt controlled by Re Isp controlled by pulse period Gate Pulse Width Ves En Gate Pulse Period Driver lem Body Diode Forward Current Isp DUT di dt lam Body Diode Reverse Current Vos DUT Body Diode Recovery dv dt Body Diode Forward Voltage Drop 0cNZ3dOJ 2000 Fairchild Semiconductor International Rev A April 2000 FQPF7N20 Package Dimensions TO 220F 10 16 020 93 18 0 10 2 54 0 20 zn 7 00 3 7 00 0 70 ceo to I X Fi o S F N Q o e 1 00x45 o 00 LO MAX1 47 8 Fi w 0 80 0 10 x c o s i 1 0 35 0 10 0 10 4 0 507505 _ 2 76 0 20 2 5ATYP 2 5ATYP 2 54 0 20 2 54 0 20 S Fi 9 40 0 20 a N IT 4 el 2000 Fairchild Semiconductor International Rev A April 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks ACEx HiSeC SuperSOT 8 Bottomless ISOPLANAR SyncFET CoolFET MICROWIRE TinyLogic CROSSVOLT POP UHC E2CMOS PowerTrench VOX M FACT QFET FACT

FAIRCHILD FQPF7N20 Manual (1)(1)

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