FAIRCHILD FQPF6N70 handbook
Contents
1. HABE RAGA Cie eu BAERS C EAIRCHILD December 2000 QFET EH SEMICONDUCTOR m FQPF6N70 700V N Channel MOSFET General Description Features These N Channel enhancement mode power field effect 3 5A 700V Rps on 1 52 Veg 10 V transistors are produced using Fairchild s proprietary Low gate charge typical 30 nC planar stripe DMOS technology Low Crss typical 15 pF This advanced technology is especially tailored to minimize Fast switching on state resistance provide superior switching 100 avalanche tested performance and withstand high energy pulse in the Improved dv dt capability avalanche and commutation modes These devices are well suited for high efficiency switch mode power supply TO 220F FQPF Series Absol ute Maxi mum Rati ngs Tc 25 C unless otherwise noted Symbol Parameter FQPF6N70 Vpss Drain Source Voltage 700 Ip Drain Current Continuous Tc 25 C 3 5 Continuous Tc 100 C 2 2 IDM Drain Current Pulsed 14 Gate Source Voltage 30 Single Pulsed Avalanche Energy 600 Avalanche Current 3 5 Repetitive Avalanche Energy 4 8 Peak Diode Recovery dv dt 4 5 Power Dissipation Tc 25 C 48 Derate above 25 C 0 39 Operating and Storage Temperature Range 55 to 150 Maximum lead temperature for soldering purposes 1 8 from case for 5 seconds 300 Thermal Characteristics Symbol Param2. Ma Drain Source Voltage V Figure 5 Capacitance Characteristics Drain Current A a 2 4 6 8 10 Vs Gate Source Voltage V Figure 2 Transfer Characteristics 10 Es 3 E 10 B 1500 25C A i Notes 1V 0V 2 2504s Pulse Test 10 L L L L 02 04 06 08 10 12 14 Vp Source Drain Voltage V Figure 4 Body Diode Forward Voltage Variation vs Source Current and Temperature Veg Gate Source Voltage V X Note 62A 5 10 15 20 25 30 Q Total Gate Charge nC Figure 6 Gate Charge Characteristics 2000 Fairchild Semiconductor International Rev A2 December 2000 OZN94d04 Typical Characteristics coe 12 30 25r 11r 8 ge 8 20 S 10 36 15F ez g 65 8 L Be ra 1 0 09 3 amp 05 08 L l 1 L 00 i i i i i 100 50 0 50 100 150 200 200 50 0 50 100 150 200 T Junction Terrperature C T Junction Temperature C Figure 7 Breakdown Voltage Variation Figure 8 On Resistance Variation vs Temperature vs Temperature oP 4 Operation in This Area is Limited DP T T z t t D g 3 amp 5 2 Notes 1 T 25 C 2 7 150 C 3 Single Pulse 10 0 i i i i 10 10 10 10 25 50 75 100 125 150 Vps Drain Source Voltage V T Case Temperature C Figure 9 Maximum
3. 0 10 2 54 0 20 o 7 00 0 70 eo Lag eo Ir L i amp F 8 oO S e N amp o m S 1 00x45 i e co Dei MAST A4 S E Lo 0 80 0 10 o O Se 1 0 35 0 10 0 10 4 0 507005 _ 2 76 0 20 2 54TYP 2 54TYP 2 54 0 20 2 54 0 20 S A 9 40 0 20 2 eg E i 2000 Fairchild Semiconductor International Rev A2 December 2000 OZN94d04 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks ACEx HiSeC SuperSOT 8 Bottomless ISOPLANAR SyncFET CoolFET MICROWIRE TinyLogic CROSSVOLT POP UHC E CMOS PowerTrench VCX FACT QFET FACT Quiet Series Qs FAST Quiet Series FASTr SuperSOTTM 3 GTO SuperSOT 6 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN
4. APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL As used herein 1 Life support devices or systems are devices or systems which a are intended for surgical implant into the body or b support or sustain life or c whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to PRODUCT STATUS DEFINITIONS Definition of Terms Formative or In Design Advance Information Preliminary First Production No Identification Needed Full Production Obsolete Not In Production result in significant injury to the user 2 A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness This datasheet contains the design specifications for product development Specifications may change in any manner without notice This datasheet contains preliminary data and supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design This datasheet contains final specifications Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design This datasheet contains specifications on a product that has been discontinued by Fairchild semiconducto
5. Safe Operating Area Figure 10 Maximum Drain Current vs Case Temperature o o i o o o 0 o 10 E Notes E F 1 Z t 2 60 C W Max 2 Duty Factor D t t o 9 05 S Tj To Pou Zo jc c 107 N R single pulse 10 10 10 10 10 107 10 10 t Square Wave Pulse Duration sec Figure 11 Transient Thermal Response Curve 2000 Fairchild Semiconductor International Rev A2 December 2000 OZN94d04 Gate Charge Test Circuit amp Waveform Same Type as DUT 12V gt Charge Resistive Switching Test Circuit amp Waveforms V DS goo 10 Ves e SUE t on ss t off Unclamped Inductive Switching Test Circuit amp Waveforms E iss BVnss 2 BVsss Vi BVpss las lp t Vpp Vps t 2000 Fairchild Semiconductor International Rev A2 December 2000 OZN94d04 Peak Diode Recovery dv dt Test Circuit amp Waveforms Same Type as DUT Von e dv dt controlled by Re Isp controlled by pulse period Gate Pulse Width Vas SS ENR uere E Gate Pulse Period Driver lem s Body Diode Forward Current Isp DUT di dt la Body Diode Reverse Current Vos DUT Body Diode Recovery dv dt Body Diode Forward Voltage Drop 2000 Fairchild Semiconductor International Rev A2 December 2000 OZN94d04 Package Dimensions TO 220F 10 16 0 20 __ 93 18
6. eter Roc Thermal Resistance Junction to Case Rosa Thermal Resistance Junction to Ambient 2000 Fairchild Semiconductor International Rev A2 December 2000 OZN94d04 Electrical Characteristics T 25 c uniess otherwise noted 2 L 91mH las 3 5A Vpp 50V Rg 25 Q Starting Ty 25 C 3 Isp lt 6 2A di dt lt 200A us Von lt BVpss Starting Ty 25 C 4 Pulse Test Pulse width lt 300us Duty cycle lt 2 5 Essentially independent of operating temperature 1 Repetitive Rating Pulse width limited by maximum junction temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVpss Drain Source Breakdown Voltage Ves 0 V Ip 250 uA 700 V ABV DSS Breakdown Voltage Temperature Ip 250 uA Referenced to 25 C _ 0 78 Viet ATJ Coefficient Joes Vps 700 V Veg 0 V 10 uA Drai Zero Gate Voltage Drain Current Vps 560 V Tc 125 C 100 uA lassr Gate Body Leakage Current Forward Ves 30 V Vps 0V 100 nA lassR Gate Body Leakage Current Reverse Vas 30 V Vps 0 V 100 nA On Characteristics Vesith Gate Threshold Voltage Vps Vas lp 250 A 3 0 5 0 Rps on Static Drain Source Vas 10 V Ip 1 75 A Q On Resistance 9s p 1 16 1 5 Ors Forward Transc
7. onductance Vps 50 V Ip 1 75A Note4 4 7 Dynamic Characteristics Ciss Input Capacitance Vps 25 V Veg 0 V 1100 1400 pF Coss Output Capacitance f 1 0 MHz 125 150 pF Css Reverse Transfer Capacitance 15 120 pF Switching Characteristics ta on Turn On Delay Time Von 350 V Ip 6 2A ES 25 60 ns t Turn On Rise Time Rg 252 x 70 150 ns la oft Turn Off Delay Time 55 120 ns tr Turn Off Fall Time PE 50 110 ns Qg Total Gate Charge Vps 560 V Ip 6 2 A B 30 40 nC Qgs Gate Source Charge Ves 10 V 6 5 nC Qga Gate Drain Charge Note 4 5 13 SS nC Drain Source Diode Characteristics and Maximum Ratings ls Maximum Continuous Drain Source Diode Forward Current 3 5 A Jeu Maximum Pulsed Drain Source Diode Forward Current 14 A Vsp Drain Source Diode Forward Voltage Ves 0 V I 3 5 A 1 4 V trr Reverse Recovery Time Ves 0 V I 6 2 A 340 ns Qr Reverse Recovery Charge dr dt 100 A us Note 4 i 27 ei uC Notes 2000 Fairchild Semiconductor International Rev A2 December 2000 OZN94d04 Typical Characteristics lp Drain Current A Ma Drain Source Voltage V Figure 1 On Region Characteristics w T Rosa 2 Drain Source On Resistance X Note T 25 0 L L L L 0 4 8 12 16 20 I Drain Current A Figure 3 On Resistance Variation vs Drain Current and Gate Voltage
8. r The datasheet is printed for reference information only 2000 Fairchild Semiconductor International Rev A January 2000
Download Pdf Manuals
Related Search
FAIRCHILD FQPF6N70 handbook