STMICROELECTRONICS STPS15L60CB Manual
Contents
1. Fig 9 Forward voltage drop versus forward current IFM A 0 ge Tj 125 C E Maximut r2 values 3 Tj 125 C d Tj 25 C Typical values Be t Maximum values 10 0 2 1 0 h VFM V 01 te 0 0 02 0 4 06 08 1 0 12 1 4 16 18 20 22 24 26 ky Fig 6 Relative variation of thermal impedance junction to case versus pulse duration Zth j c Rth j c 1 0 0 9 0 8 0 7 0 6 0 5 0 4 75 02 0 3 r8 01 0 2 _ Single pulse 0 1 tp s B tp T tp 0 0 l 1 E 03 1 E 02 1 E 01 1 E 00 Fig 8 Junction capacitance versus reverse voltage applied typical values C pF 00 VR V 100 Fig 10 Thermal resistance junction to ambient ver sus copper surface under tab epoxy printed board FRA Cu 35um Rth j a C W 00 10 S cm 3 4 STPS15L60CB PACKAGE MECHANICAL DATA DPAK DIMENSIONS HI REF Millimeters Inches io c2 A 22. Rth c Coupling When the diodes 1 and 2 are used simultaneously A Tj diode 1 P diode1 x Rihyj c Per diode P diode 2 x Rin o STATIC ELECTRICAL CHARACTERISTICS per diode Symbol Parameter In Reverse leakage current Tj 25 C Tj 125 C VF Forward voltage drop Tj 25 C Tj 125 C Tests Conditions Min Ty Max Unit 4 IF 7 5A Tj 25 C Tj 125 C Tj 25 C Tj 125 C Pulse test tp 380 us 6 2 mA lF 12A 0 IF 15A 0 82 IF 15A 0 0 72 p 5 0 52 0 57 lF 12A 0 76 62 0 68 66 To evaluate the conduction losses use the following equation P 0 32 x Ir av 0 027 Ir RMsS Fig 1 Conduction losses versus average current PF av W 6 0 5 5 8 05 Du 8 02 m 45 8204 7 4 0 0 05 Y 3 5 3 0 2 5 2 0 1 5 j 1 J 1 0 7 0 5 IF av A 3 ztp T if tp 1 0 0 0 1 2 3 4 5 6 7 8 9 10 Fig 3 Normalized avalanche power derating versus pulse duration PARM tp A PanM 1ps 0 01 tp us 0 001 pus 0 01 0 1 1 10 100 1000 Fig
3. 2 Average forward current versus ambient temperature 8 0 5 IF av A 9 8 Rth j a Rth j c Rth j a 70 C W Tamb C 0 25 50 75 100 125 150 Fig 4 Normalized avalanche power derating versus junction temperature PARM tp PARM 25 C 1 2 1 0 8 0 6 0 4 0 2 TjCC 0 jj I I 0 25 50 75 100 125 150 2 4 STPS15L60CB Fig 5 Non repetitive surge peak forward current versus overload duration maximum values IM A 0 50 Tc 25 C 40 Tc 75 C 20 L Y Tc 125 C F M Af pes t s 1 E 03 1 E 02 1 E 01 1 E 00 Fig 7 Reverse leakage current versus reverse voltage applied typical values IR mA 1 E 03 Tj 150 C 1 E 02 Tj 125 C 1 E 01 TELI 1 E 00 ee Tj 50 C 1 E 01 Ti 25 C 1 E 02 VR V 1 E 03 L1
4. 20 2 40 0 086 0 094 A1 0 90 1 10 0 035 0 043 H A2 0 03 0 23 0 001 0 009 B 0 90 0 025 0 035 B2 5 20 5 40 0 204 0 212 i C 0 45 0 60 0 017 0 023 C2 0 60 0 018 0 023 D 6 00 6 20 0 236 0 244 E 6 40 6 60 0 251 0 259 G 4 40 4 60 0 173 0 181 H i 0 368 0 397 L2 0 031 typ L4 1 00 0 023 0 039 V2 0 8 0 8 FOOTPRINT dimensions in mm 6 7 STPS15L60CB S15L60C DPAK STPS15L60CB TR S15L60C DPAK 0 30g 2500 Tape amp reel EPOXY MEETS UL94 VO Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics The ST logo is a registered trademark of STMicroelectronics 2003 STMicroelectronics Printed in Italy All
5. rights reserved STMicroelectronics GROUP OF COMPANIES Australia Brazil Canada China Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States http www st com 4 4 yr
6. ky STPS15L60CB POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF AV 2x7 5A B VRRM 60V k Tj max 150 C a Vr max 0 52 V FEATURES AND BENEFITS NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE AVALANCHE CAPABILITY SPECIFIED DESCRIPTION Dual center tab Schottky rectifier suited for Switch Mode Power Supply and high frequency DC to DC converters Package in DPAK this device is intended for use in low voltage high frequency inverters free wheeling and polarity protection applications DPAK ABSOLUTE RATINGS limiting values per diode Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 60 V IF RMS RMS forward current 10 A lF AV Average forward current Tc 135 C Per diode 7 5 8 0 5 5 a u Per device 5 1 IFSM Surge non repetitive forward current tp 10 ms sinusoidal 7 A IRRM Peak repetitive reverse current tp 2 us square F 1kHz 1 A W PARM Repetitive peak avalanche power tp 1us Tj 25 C 3700 Tsig Storage temperature range 65 to 175 Tj Maximum operating junction temperature C dV dt Critical rate of rise reverse voltage 10000 dPtot J 1 dTj Rth j a thermal runaway condition for a diode on its own heatsink July 2003 Ed 2A 1 4 STPS15L60CB THERMAL RESISTANCES Symbol Parameter Rth c Junction to case Unit Per diode Total
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STMICROELECTRONICS STPS15L60CB Manual