PHILIPS BCV62 PNP general purpose double transistor handbook
Contents
1. 5 mA stability of lc1 Notes 1 Decreasing 1 7 mV C with increasing temperature 2 Decreasing 2 mV C with increasing temperature 3 Device without emitter resistors mounted on an FR4 printed circuit board C1 2 1 VCE1 D O leo constant O leo constant e Vco Vco D MBKO081 ee VCE1 5 V device without emitter resistors mounted on an FR4 printed circuit board Voltage drop at contacts Voo lt lt U 216 mV Fig 2 Test circuit current matching Fig 3 BCV62 with emitter resistors 1999 Apr 08 4 Philips Semiconductors Product specification PNP general purpose double transistor BCV62 MBK083 30 VCE1max lE2 v 1 mA 10 mA 50 mA 10 1 1 10 Re 2 102 21 413 see Fig 3 Fig 4 Maximum collector emitter voltage as a function of emitter resistance 1999 Apr 08 5 Philips Semiconductors Product specification PNP general purpose double transistor BCV62 PACKAGE OUTLINE Plastic surface mounted package 4 leads SOT143B detail X 0 1 Litirririti titi is scale DIMENSIONS mm are the original dime2. 785 Fax 31 40 27 88399 New Zealand 2 Wagener Place C P O Box 1041 AUCKLAND Tel 64 9 849 4160 Fax 64 9 849 7811 Norway Box 1 Manglerud 0612 OSLO Tel 47 22 74 8000 Fax 47 22 74 8341 Pakistan see Singapore Philippines Philips Semiconductors Philippines Inc 106 Valero St Salcedo Village P O Box 2108 MCC MAKATI Metro MANILA Tel 63 2 816 6380 Fax 63 2 817 3474 Poland UI Lukiska 10 PL 04 123 WARSZAWA Tel 48 22 612 2831 Fax 48 22 612 2327 Portugal see Spain Romania see Italy Russia Philips Russia Ul Usatcheva 35A 119048 MOSCOW Tel 7 095 755 6918 Fax 7 095 755 6919 Singapore Lorong 1 Toa Payoh SINGAPORE 319762 Tel 65 350 2538 Fax 65 251 6500 Slovakia see Austria Slovenia see Italy South Africa S A PHILIPS Pty Ltd 195 215 Main Road Martindale 2092 JOHANNESBURG P O Box 7430 Johannesburg 2000 Tel 27 11 470 5911 Fax 27 11 470 5494 South America Al Vicente Pinzon 173 6th floor 04547 130 SAO PAULO SP Brazil Tel 55 11 821 2333 Fax 55 11 821 2382 Spain Balmes 22 08007 BARCELONA Tel 34 93 301 6312 Fax 34 93 301 4107 Sweden Kottbygatan 7 Akalla S 16485 STOCKHOLM Tel 46 8 5985 2000 Fax 46 8 5985 2745 Switzerland Allmendstrasse 140 CH 8027 ZURICH Tel 41 1 488 2741 Fax 41 1 488 3263 Taiwan Philips Semiconductors 6F No 96 Chien Kuo N Rd Sec 1 TAIPEI Taiwan Tel 886 2 2134 2886 Fax 886 2 2134 2874 Thaila
3. DISCRETE SEMICONDUCTORS DATA SHEET BCV62 PNP general purpose double transistor Product specification 1999 Apr 08 Supersedes data of 1997 Jun 18 Philips PHILIPS Semiconductors DH LI p Philips Semiconductors Product specification PNP general purpose double transistor BCV62 FEATURES e Low current max 100 mA e Low voltage max 30 V e Matched pair APPLICATIONS e For use in applications where the working point must be independent of temperature e Current mirrors DESCRIPTION PNP double transistor in a SOT143B plastic package NPN complement BCV61 MARKING TYPE NUMBER MARKING CODE TYPE MARKING NUMBER CODE BCV62 3Mp BCV62A 3Jp BCV62B 3Kp BCV62C 3Lp PINNING PIN DESCRIPTION 1 collector TR2 base TR1 and TR2 3 emitter TR1 3E Top view MAM292 Fig 1 Simplified outline SOT143B and symbol LIMITING VALUES In accordance with the Absolute Maximum Rating System IEC 134 SYMBOL PARAMETER CONDITIONS VcBo collector base voltage TR1 open emitter collector current DC peak collector current VcEO collector emitter voltage TR1 open base VeBs emitter base voltage Voce 0 storage temperature junction temperature Note 1 Device mounted on an FR4 printed circuit board 1999 Apr 08 Philips Semiconductors Product specification PNP general purpose double transistor BCV62 THERMA
4. L CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rtn j a thermal resistance from junction to ambient note 1 500 K W Note 1 Device mounted on an FR4 printed circuit board CHARACTERISTICS Tj 25 C unless otherwise specified SYMBOL PARAMETER CONDITIONS Transistor TR1 le 0 Vos 30V le 0 Vos 30 V Tj 150 C lc 0 Veg 5 V Ic 100 uA Vece 5V Ic 2 mA Voce 5V Ic 10 mA Ip 0 5 mA Ic 100 mA Ip 5 mA VBEsat base emitter saturation Ic 10 mA lg 0 5 mA note 1 Pr voltage lc 100 mA Ig 5 mA note 1 base emitter voltage Ic 2 mA Vce 5 V note 1 lc 10 mA Vce 5 V note 2 transition frequency lc 10 mA Vce 5 V f 100 MHz noise figure Ic 200 uA Voce 5 V Rs 2 KQ f 1 kHz B 200 Hz Ce collector capacitance le ie 0 Vcg 10 V fr F Transistor TR2 VesBs base emitter forward voltage Ie 250 mA Vcg 0 le 10 uA Vcg 0 hfe DC current gain lc 2 MA Vce 5 V BCV62A BCV62B BCV62C 1999 Apr 08 3 Philips Semiconductors Product specification PNP general purpose double transistor BCV62 SYMBOL PARAMETER CONDITIONS Transistors TR1 and TR2 current matching of transistors le2 0 5 MA Vce1 5 V Tamb lt 25 C TR1 and TR2 leo 0 5 mA Vce1 5 V Tamb lt 150 C leo emitter current for thermal Vce1 5 V note 3 see Fig 2
5. lips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale 1999 Apr 08 7 Philips Semiconductors Argentina see South America Australia 34 Waterloo Road NORTH RYDE NSW 2113 Tel 61 2 9805 4455 Fax 61 2 9805 4466 Austria Computerstr 6 A 1101 WIEN P O Box 213 Tel 43 1 60 101 1248 Fax 43 1 60 101 1210 Belarus Hotel Minsk Business Center Bld 3 r 1211 Volodarski Str 6 220050 MINSK Tel 375 172 20 0733 Fax 375 172 20 0773 Belgium see The Netherlands Brazil see South America Bulgaria Philips Bulgaria Ltd Energoproject 15th floor 51 James Bourchier Blvd 1407 SOFIA Tel 359 2 68 9211 Fax 359 2 68 9102 Canada PHILIPS SEMICONDUCTORS COMPONENTS Tel 1 800 234 7381 Fax 1 800 943 0087 China Hong Kong 501 Hong Kong Industrial Technology Centre 72 Tat Chee Avenue Kowloon Tong HONG KONG Tel 852 2319 7888 Fax 852 2319 7700 Colombia see South America Czech Republic see Austria Denmark Sydhavnsgade 23 1780 COPENHAGEN V Tel 45 33 29 3333 Fax 45 33 29 3905 Finland Sinikalliontie 3 FIN O2630 ESPOO Tel 358 9 615 800 Fax 358 9 6158 0920 France 51 Rue Carnot BP317 92156 SURESNES Cedex Tel 33 1 4099 6161 Fax 33 1 4099 6427 Germany HammerbrookstraBe 69 D 20097 HAMBURG Tel 49 40 2353 60 Fax 49 40 2353 6300 Hu
6. nd PHILIPS ELECTRONICS THAILAND Ltd 209 2 Sanpavuth Bangna Road Prakanong BANGKOK 10260 Tel 66 2 745 4090 Fax 66 2 398 0793 Turkey Talatpasa Cad No 5 80640 GULTEPE ISTANBUL Tel 90 212 279 2770 Fax 90 212 282 6707 Ukraine PHILIPS UKRAINE 4 Patrice Lumumba str Building B Floor 7 252042 KIEV Tel 380 44 264 2776 Fax 380 44 268 0461 United Kingdom Philips Semiconductors Ltd 276 Bath Road Hayes MIDDLESEX UB3 5BxX Tel 44 181 730 5000 Fax 44 181 754 8421 United States 811 East Arques Avenue SUNNYVALE CA 94088 3409 Tel 1 800 234 7381 Fax 1 800 943 0087 Uruguay see South America Vietnam see Singapore Yugoslavia PHILIPS Trg N Pasica 5 v 11000 BEOGRAD Tel 381 11 62 5344 Fax 381 11 63 5777 Internet http www semiconductors philips com SCA63 All rights are reserved Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner The information presented in this document does not form part of any quotation or contract is believed to be accurate and reliable and may be changed without notice No liability will be accepted by the publisher for any consequence of its use Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights Printed in The Netherlands 115002 00 03 pp8 Philips Semiconductors Date of release 1999 Apr 08 Document order number 9397 750 05558 Le
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8. nsions UNIT A mm OUTLINE REFERENCES EUROPEAN VERSION JEDEC EIAJ PROJECTION ISSUE DATE SOT143B E 97 02 28 1999 Apr 08 6 Philips Semiconductors Product specification PNP general purpose double transistor BCV62 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development Preliminary specification This data sheet contains preliminary data supplementary data may be published later Product specification This data sheet contains final product specifications Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System IEC 134 Stress above one or more of the limiting values may cause permanent damage to the device These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied Exposure to limiting values for extended periods may affect device reliability Application information Where application information is given it is advisory and does not form part of the specification LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances devices or systems where malfunction of these products can reasonably be expected to result in personal injury Phi
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PHILIPS BCV62 PNP general purpose double transistor handbook