STMICROELECTRONICS STTH102 handbook
Contents
1. 10 S cm 0 0 0 5 1 0 1 5 2 0 2 5 3 0 3 5 4 0 4 5 5 0 4 6 Figure 12 Relative variations of dynamic parameters versus junction temperature IRM trr Qrr Tj IRM trr Qrr Tj 25 C 3 5 le le av dle dt 200A us Vg 100V 3 0 Qa 2 5 25 50 75 100 125 150 175 Figure 14 Thermal resistance versus lead length DO 41 Rtn C W 10 gt _ a R E S E ET E E n E CEE a TN 50 Ring Lieads mm 5 10 15 20 25 x Figure 15 SMA Package Mechanical Data iS Figure 16 SMA Foot Print Dimensions in millimeters I 1 65 lt _ gt __ gt 1 45 2 40 1 45 DIMENSIONS STTH102 Millimeters Inches Min Min Max A1 1 90 2 03 0 080 b 0 049 0 065 0 006 0 016 E 0 189 0 220 E1 3 95 4 60 0 181 5 6 STTH102 Figure 17 DO 41 Package Mechanical Data c A C OB gt lt gt Y TN m oD D DIMENSIONS REF Millimeters Inches Min Max Min Max A 4 07 5 20 0 160 0 205 B 22. 0 4 0 3 6 02 le 0 2 L 0 1 0 1 single pulse tp s O tp T tp 0 0 1 E 01 1 E 00 1 E 01 1 E 02 1 E 03 Figure 8 Junction capacitance versus reverse voltage applied typical values C pF 100 F 1MHz Vosc 30mVnus Tj 25 C 10 VR V 1 Ll 1 10 100 1000 Figure 10 Peak recovery current versus dlp dt 90 confidence IRM A 3 5 Ip 1A Vg 100V 3 0 Tj 125 C 25 2 0 Tj 125 C 15 1 0 HEH T 25 C 05 H dir dt A us 0 0 1 10 100 1000 3 6 STTH102 Figure 11 Reverse recovery charges versus dip dt 90 confidence Qrr nC 0 32 5 Ir 1A Va 100V 20 0 Tj 125C Ls Tj 25 C 1 10 100 1000 Figure 13 Thermal resistance junction to ambient versus copper surface under each lead Epoxy printed circuit board FR4 copper thickness 35um SMA Rth j a C W
3. amb C 0 0 1 L L I 1 0 25 50 75 100 125 150 175 Figure 5 Relative variation of thermal impedance junction to ambient versus pulse duration epoxy printed circuit board e Cu 235um recommended pad layout SMA Zth j c Rth j c 1 0 0 9 0 8 0 7 0 6 Fs 05 0 5 0 4 0 3 L9202 02 620 1 d tp s amp tp T fl t Single pulse 0 0 LILI 1 E 01 1 E 00 1 E 01 1 E 02 1 E 03 Figure 7 Forward voltage drop versus forward current IFm A 100 0 Ti 125 C Lem maximum values Fd 10 0 Ti 125C La typical values a SC T T 7 Tj 25 C A maximum values 1 0 Z 7S 7 ri H FAF Vem V 0 1 po Figure 9 Reverse recovery time versus dlp dt 90 confidence trr ns Tj 125C T29c dir dt A us 0 a 1 10 100 1000 STTH102 Figure 6 Relative variation of thermal impedance junction to ambient versus pulse duration DO 41 Zth j c Rth j c 0 0 9 0 8 0 7 0 6 0 5
4. 04 2 71 0 080 0 107 C 28 1 102 D 0 712 0 863 0 028 0 034 Table 6 Ordering Information Ordering type Marking Package Weight Base qty Delivery mode STTH102A U12 0 068 g 5000 Tape amp reel STTH102 STTH102 DO 41 0 34 g 2000 Ammopack STTH102RL STTH102 DO 41 0 34 g 5000 Tape amp reel m Bandindicates cathode m Epoxy meets UL94 VO Table 7 Revision History Date Revision Description of Changes Jul 2003 Last update 1 SMA package dimensions update Reference A1 max Aug 2004 changed from 2 70mm 0 106inc to 2 03mm 0 080 2 SMA and DO 41 datasheets merged 27 Jun 2005 Corrected error in title Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication are subject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners
5. 2005 STMicroelectronics All rights reserved STMicroelectronics group of companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States of America www st com ele r
6. ky STTH102 HIGH EFFICIENCY ULTRAFAST DIODE Table 1 Main Product Characteristics lF av 1A VRRM 200 V Tj max 175 C Q VA V max 0 78 V p t max 20 ns DO 41 JEDEC DO 214AC FEATURES AND BENEFITS STTH102A STTH102 m Very low conduction losses m Negligible switching losses m Low forward and reverse recovery times m High junction temperature Table 2 Order Codes Part Number Marking DESCRIPTION STTH102A U12 The STTH102 which is using ST s new 200V a M planar technology is specially suited for switching STTH102RL STTHIO2 mode base drive and transistor circuits The device is also intended for use as a free wheeling diode in power supplies and other power switching applications Table 3 Absolute Ratings limiting values Symbol Parameter Value Unit Vnnu Repetitive peak reverse voltage i j p TL 148 C 8 05 148 C 820 5 F AV verage forward current oar Tas DO 41 TL 130 C 820 5 Surge non repetitive forward tp 10 ms Sinusoidal FSM lourrent DO 41 a Tsg Storage temperature range NEM to 175 ES Tj Maximum operating junction temperature dV dt Critical rate of rise of reverse voltage 10000 V us June 2005 REV 4 1 6 STTH102 Table 4 Thermal Resistance Symbol Parameter Value Unit SMA 30 Rai i o HP ii Lead length 10 mm DO 41 50 TM Table 5 Static Electrical Characteris
7. tics Symbol Parameter Tests conditions In Reverse leakage current R Tj 125 C a Tj 25 C Vr Forward voltage drop Tj 125 C Pulse test tp 5ms lt 2 tp 380 us lt 2 To evaluate the conduction losses use the following equation P 0 65 x IF AV 0 130 IF RMS Figure 1 Average forward power dissipation versus average forward current SMA PF AV W 2 o u JR i 1 Ir avy A tp T 1 p j 0 0 0 2 0 4 0 6 0 8 1 0 12 Figure 3 Average forward current versus ambient temperature 5 0 5 SMA IF AV A 1 2 Ring aj Ring 1 0 0 8 0 6 Rin a 120 C W 0 4 02 Iu o G tp T tp Tamb C 0 0 l 0 25 50 75 100 125 150 175 2 6 Figure 2 Average forward power dissipation versus average forward current DO 41 PF AV W 1 0 o I A id IF AV A eom i Figure 4 Average forward current versus ambient temperature 5 0 5 DO 41 IF AV A 1 2 Runj ay Pina 1 0 0 8 0 6 Ring a 110 C W 0 4 KL O25 T o amp ctp T
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STMICROELECTRONICS STTH102 handbook