FAIRCHILD FQPF17N40 Manual(1)
Contents
1. MARE KARA BRERA ARSA BAERS EEN i EAIRCHILD April 2000 PO cen QFET SEMICONDUCTOR m FQPF17N40 FQPF17N40 400V N Channel MOSFET General Description Features These N Channel enhancement mode power field effect 9 5A 400V Rps on 0 272 Q Vas 10 V transistors are produced using Fairchild s proprietary Low gate charge typical 45 nC planar stripe DMOS technology Low Crss typical 30 pF This advanced technology has been especially tailored to Fast switching minimize on state resistance provide superior switching 100 avalanche tested performance and withstand high energy pulse in the Improved dv dt capability avalanche and commutation mode These devices are well suited for high efficiency switch mode power supply electronic lamp ballast based on half bridge TO 220F FQPF Series Absol ute Maximu m Ratings To 25 C unless otherwise noted Symbol Parameter FQPF17N40 Vpss Drain Source Voltage 400 Ip Drain Current Continuous Tc 25 C 95 Continuous Tg 100 C 6 0 IDM Drain Current Pulsed 38 Gate Source Voltage 30 Single Pulsed Avalanche Energy 1000 Avalanche Current 9 5 Repetitive Avalanche Energy 5 6 Peak Diode Recovery dv dt 4 5 Power Dissipation Tg 25 C 56 Derate above 25 C 0 45 Operating and Storage Temperature Range 55 to 150 Maximum lead temperature for soldering purposes 1 8 from case for 5 seconds2. 300 Thermal Characteristics Symbol Parameter Roc Thermal Resistance Junction to Case Roya Thermal Resistance Junction to Ambient 2000 Fairchild Semiconductor International Rev A April 2000 Electrical Characte ristics Tc 25 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVpss Drain Source Breakdown Voltage Ves 0 V Ip 250 pA 400 V ABVpss Breakdown Voltage Temperature Ip 250 uA Ref d to 25 C e AT Coefficient D pa MR 9 44 we Vps 400 V Veg 0 V zh 1 A RSS Zero Gate Voltage Drain Current ie 320 V 125 C n 7 10 lesse Gate Body Leakage Current Forward Veg 30 V Vps 0V 100 nA lassr Gate Body Leakage Current Reverse Ves 30 V Vps 0 V 100 nA On Characteristics Vest Gate Threshold Voltage Vps Vos Ip 250 uA 3 0 a 5 0 V Rps on Static Drain Source Ves 10 V Ip 4 75 A On Resistance GE 9 21 9 27 Q 9rs Forward Transconductance Vps750V lp 2 4 75A Note4 10 Dynamic Characteristics Ciss Input Capacitance Vps 25 V Veg 0 V ze 1800 2300 pF Coss Output Capacitance f 1 0 MHZ 270 350 pF Crss Reverse Transfer Capacitance 30 40 pF Switching Characteristics t s i t d on Turn On Delay Ti
3. a E a a UL Notes E 1 T 25 C E i 2 T 150 C H i 3 Single Pulse 10 L 0 i i i i 10 10 10 10 25 50 75 100 125 150 Vps Drain Source Voltage V T Case Temperature C Figure 9 Maximum Safe Operating Area Figure 10 Maximum Drain Current vs Case Temperature 10 FD 70 5 Notes 1 Z t 2 23 C W Max 2 Duty Factor D t t 3 T 7 To Pou Ze sel tl lt tu Z RUE Thermal Response 10 10 10 10 107 10 10 t Square Wave Pulse Duration sec Figure 11 Transient Thermal Response Curve 2000 Fairchild Semiconductor International Rev A April 2000 OVNZI dDJ FQPF17N40 Gate Charge Test Circuit amp Waveform Charge Resistive Switching Test Circuit amp Waveforms 9096 10 GS dee a bo VEN ta tel Unclamped Inductive Switching Test Circuit amp Waveforms a Ti BVpss 572 75 BVoss Vop BVpss las Ip t Vop Vos t 2000 Fairchild Semiconductor International Rev A April 2000 Peak Diode Recovery dv dt Test Circuit amp Waveforms Same Type as DUT e dv dt controlled by Re Isp controlled by pulse period Gate Pulse Width Ves screen A Gate Pulse Period Driver lzm Body Diode Forward Current Isp DUT di dt lam Body Diode Reverse Current Vos DUT Body Diode Recovery dv dt Body Diode Forward Voltage Drop
4. OVNZ 1 4dO04 2000 Fairchild Semiconductor International Rev A April 2000 FQPF17N40 Package Dimensions TO 220F 10 16 020 _ 3 18 0 10 2 54 0 20 3 3 7 00 0 70 m _ re eo T amp l Fi 8 o 8 e N 8 D E 1 00x45 5 o LO MAX1 47 8 fi LO 0 80 0 10 5 O 99 1 0 35 0 10 0 10 4 0 507505 _ 2 76 0 20 2 54TYP 2 54TYP 2 54 0 20 2 54 0 20 S T 9 40 0 20 2 N A tf 2000 Fairchild Semiconductor International Rev A April 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks ACEx HiSeC SuperSOT 8 Bottomless ISOPLANAR SyncFET CoolFET MICROWIRE TinyLogic CROSSVOLT POP UHC E2CMOS PowerTrench VOX M FACT QFET FACT Quiet Series QSTM FAST Quiet Series FASTr SuperSOT 3 GTO SuperSOT 6 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS LIFE SUPP
5. Figure 3 On Resistance Variation vs Drain Current and Gate Voltage 10 10 Vi Drain Source Voltage V Figure 5 Capacitance Characteristics 10 T g 3 Es amp 10 a 19 2 4 6 8 10 Vos Gate Source Voltage V Figure 2 Transfer Characteristics T10 3 8 je 150 C 25 C 4 3 Notes 1V 0V 2 2501 s Pulse Test 10 L i L L L L L L 02 04 06 08 10 12 14 16 18 20 Vig Source Drain Voltage V Figure 4 Body Diode Forward Voltage Variation vs Source Current and Temperature 12 10 o sr as L Sigla 8 3 4 _ 8 dolo o 3 F gt 3 Note L5 172A 0 i i i i 0 10 20 30 40 50 Q Total Gate Charge nC Figure 6 Gate Charge Characteristics 2000 Fairchild Semiconductor International Rev A April 2000 Typical Characteristics continued 12 30 257 207 ON ce 2 x Dan go s 2 1 2501A 05 BV bg Norrralized Normalized On Resistance 08 00 1 I I 100 50 0 50 100 150 200 100 50 0 50 100 150 200 T Junction Temperature fa T Junction Temperature C Figure 7 Breakdown Voltage Variation Figure 8 On Resistance Variation vs Temperature vs Temperature C 7 T i 10 Operation in This Area 10 E s s Limited y R gay T rs T 2 10 E G E
6. ORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL As used herein result in significant injury to the user 1 Life support devices or systems are devices or systems 2 A critical component is any component of a life support which a are intended for surgical implant into the body device or system whose failure to perform can be or b support or sustain life or c whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system or to affect its safety or effectiveness provided in the labeling can be reasonably expected to PRODUCT STATUS DEFINITIONS Definition of Terms Advance Information Formative or In This datasheet contains the design specifications for Design product development Specifications may change in any manner without notice Preliminary First Production This datasheet contains preliminary data and supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design No Identification Needed Full Production This datasheet contains final specifications Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design Obsolete No
7. me Vpp 200 V Ip 17 2 A 40 90 ns t Turn On Rise Time Rg 25 Q 185 380 ns ta ofi Turn Off Delay Time 90 190 ns tr Turn Off Fall Time LE 105 220 ns Qg Total Gate Charge Vps 320 V lp 17 2 A 45 60 nC Qgs Gate Source Charge Ves 10 V 11 4 Li nC Qga Gate Drain Charge Note 4 5 _ 21 7 nC Drain Source Diode Characteristics and Maximum Ratings Is Maximum Continuous Drain Source Diode Forward Current 9 5 A lsm Maximum Pulsed Drain Source Diode Forward Current 38 A Vsp Drain Source Diode Forward Voltage Ves 0 V lg 9 5 A 1 5 V tr Reverse Recovery Time Ves 0 V lg 17 2 A 290 ns Qr Reverse Recovery Charge dlp dt 100 A us Note Ae price 2 5 uC Notes 1 Repetitive Rating Pulse width limited by maximum junction temperature 2 L 19 4mH las 9 5A Vpp 50V Rg 25 Q Starting Tj 25 C 3 lap X 17 2A di dt lt 200A us Vpp lt BVpss Starting Tj 25 C 4 Pulse Test Pulse width lt 300us Duty cycle lt 2 5 Essentially independent of operating temperature 2000 Fairchild Semic onductor International Rev A April 2000 OVNZI dD3 FQPF17N40 Typical Characteristics 10 10 10 Vps Drain Source Voltage V Figure 1 On Region Characteristics 12 10r o T Rosta C Drain Source On Resistance o o A o T T o N T X Note T 25 C 0 0 i j j i 0 15 30 45 60 I Drain Current A
8. t In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor The datasheet is printed for reference information only 2000 Fairchild Semiconductor International Rev A January 2000
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FAIRCHILD FQPF17N40 Manual(1)