FAIRCHILD FQPF19N10 100V N-Channel MOSFET Manual
Contents
1. MAER RAGA BIER Aman BAERS FQPF19N10 ESO FAIRCHILD SA SEMICONDUCTOR FQPF19N10 100V N Channel MOSFET General Description These N Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary planar stripe DMOS technology This advanced technology has been especially tailored to minimize on state resistance provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode These devices are well suited for low voltage applications such as audio amplifier high efficiency switching DC DC converters and DC motor August 2000 QFET Features 13 6A 100V Rps on 0 19 OVgs 10 V Low gate charge typical 19 nC Low Crss typical 32 pF Fast switching 10096 avalanche tested Improved dv dt capability 175 C maximum junction temperature rating control GDS TO 220F FQPF Series Absol ute Maxi mum Rati ngs Tc 25 C unless otherwise noted Symbol Parameter Vpss Drain Source Voltage FQPF19N10 100 Ip Drain Current Continuous Tc 25 C Continuous Tc 100 C 13 6 9 6 Ipm Drain Current Pulsed 54 4 Gate Source Voltage t25 Single Pulsed Avalanche Energy 220 Avalanche Current 13 6 Repetitive Avalanche Energy 3 8 Peak Diode Recovery dv dt 6 0 Power Dissipation Tc 25 C Derate above 25 C 38 0 22. t Time 2000 Fairchild Semiconductor International Rev A August 2000 Peak Diode Recovery dv dt Test Circuit amp Waveforms Same Type as DUT Voo e dv dt controlled by Re Isp controlled by pulse period Gate Pulse Width Vas aaa uere Gate Pulse Period Driver lem Body Diode Forward Current Isp DUT di dt lam Body Diode Reverse Current Vos DUT Body Diode Recovery dv dt Body Diode Forward Voltage Drop 2000 Fairchild Semiconductor International Rev A August 2000 OLN6IJdOJ FQPF19N10 Package Dimensions TO 220F 10 16 0 20 93 18 0 10 2 54 10 20 7 00 i 3 7 00 0 70 eo FB I X E 3 o S N S o S 3 1 00x45 o ceo 15 MAX1 47 8 w 0 80 0 10 o 3 o 7 1 0 35 0 10 0 10 4 0 507505 2 76 0 20 2 54TYP 2 54TYP 2 54 0 20 2 54 0 20 S 9 40 0 20 2 N E 2000 Fairchild Semiconductor International Rev A August 2000 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks ACExTM FASTr QFET VCXTM Bottomless GlobalOptoisolator Qs CoolFET GTO QT Optoelectronics CROSSVOLT HiSeC TM Quiet Series DOMETM ISOPLANARTM
3. 100 nA On Characteristics Vesith Gate Threshold Voltage Vos Vas lp 250 pA 2 0 4 0 Rps on Static Drain Source Vas 10 V lp 68A i On Resistance gs R 0 078 n 2 Ors Forward Transconductance Vps 40 V Ip 2 6 8A Note 4 10 Dynamic Characteristics Ciss Input Capacitance Vos 25 V Vas 0 V 600 780 pF Coss Output Capacitance f 1 0 MHz 165 215 pF Criss Reverse Transfer Capacitance 32 40 pF Switching Characteristics ta on Turn On Delay Time Vpp 50 V Ip 19 A 7 5 25 ns t Turn On Rise Time Rg 252 150 310 ns la oft Turn Off Delay Time 20 50 ns tr Turn Off Fall Time Note 4 5 65 140 ns Qg Total Gate Charge Vos 80 V Ip 19 A 19 25 nC Qgs Gate Source Charge Veg 10V 3 9 nC Qga Gate Drain Charge Note 4 5 9 0 nC Drain Source Diode Characteristics and Maximum Ratings ls Maximum Continuous Drain Source Diode Forward Current 13 6 A lsm Maximum Pulsed Drain Source Diode Forward Current 54 4 A Vsp Drain Source Diode Forward Voltage Vas 0V lg 13 6 A 1 5 V trr Reverse Recovery Time Ves 0 V lg 19 A 78 zx ns Qr Reverse Recovery Charge dic dt 100 A us Note 4 200 a nC Notes 2000 Fairchild Semiconductor International Rev A August 2000 OLN6 L4d04 FQPF19N10 Typical Characteristics Vos Top 150V 10 0V 80V 70V 60V 5v ZO EM a c pus Bottom 45V i ow 5
4. 5 S i S Notes 10 1 250 us Pulse Test 2 T 250 107 10 10 Vy Drain Source Voltage V Figure 1 On Region Characteristics Roson 2 Drain Source On Resistance o 8 0 30 o to R T e T eo N T 0 00 i i i X Note T 25 0 0 20 40 60 Drain Current A Figure 3 On Resistance Variation vs Drain Current and Gate Voltage 1500 8 8 Capacitance pF 8 Vg Drain Source Voltage V Figure 5 Capacitance Characteristics Ip Drain Current A lor Reverse Drain Current A Vas Gate Source Voltage V 10 10 3 Notes 1 Vas 40V 2 250s Pulse Test a i i i ur 4 6 8 10 Vas Gate Source Voltage V Figure 2 Transfer Characteristics 10 10 c t Notes i 1 Vg 0V 2 250 us Pulse Test 107 l I 02 04 06 08 10 12 14 16 18 20 Va Source Drain Voltage V Figure 4 Body Diode Forward Voltage Variation vs Source Current and Temperature o T o T FS T Dy T Note 19A 0 i i i i 0 4 8 12 16 20 Q Total Gate Charge nC Figure 6 Gate Charge Characteristics 2000 Fairchild Semiconductor International Rev A August 2000 V DS Drain Source Voltage V Figure 9 Maximum Safe Operating Area Typical Characteristics continuea 12 30 25r 8 1
5. 14 g FS 0 L 8 2 gs 20 E 10 E Z 1 5 23 265 s 8 2 g 8 E 10 gt B Er m 3 oot Notes ud 2 D 1 Vs 0V M X Notes E 2 1 250 uA i 1 Vg 10V 2 1 95A 0 8 i i i i i 0 0 i i i I I 100 50 0 50 100 150 200 100 50 0 50 100 150 200 T Junction Temperature C T Junction Temperature C Figure 7 Breakdown Voltage Variation Figure 8 On Resistance Variation vs Temperature vs Temperature T 15 Operation in This Area 10 is Limited by R gg i T 7 12 z m T 5 E 9 9 5 5 6 a Notes 3 1 T 25 C 2 T 175 C 3 Single Pulse 10 0 L L y L L 10 10 10 25 50 75 100 125 150 175 T Case Temperature C Figure 10 Maximum Drain Current vs Case Temperature Notes 1 Z selt 3 95 C W Max 2 Duty Factor D t t 3 Timo Tc Pom Ze sclt Z 60 Thermal Response single pulse 10 10 107 107 107 10 10 t Square Wave Pulse Duration sec Figure 11 Transient Thermal Response Curve 2000 Fairchild Semiconductor International Rev A August 2000 OLN6 L4d04 FQPF19N10 12V gt Gate Charge Test Circuit amp Waveform Same Type as DUT Charge Resistive Switching Test Circuit amp Waveforms Vos 9096 10 bal L ton ee ret off Unclamped Inductive Switching Test Circuit amp Waveforms E LI B AS 2 TE TIBUS Von BVoss las Ip t Vpp Vps t E
6. 5 Operating and Storage Temperature Range 55 to 175 1 8 from case for 5 seconds Maximum lead temperature for soldering purposes 300 Thermal Characteristics Symbol Parameter Hac Thermal Resistance Junction to Case ReJA Thermal Resistance Junction to Ambient 2000 Fairchild Semiconductor International Rev A August 2000 Electrical Characteristics Tc 25 C unless otherwise noted 4 Pulse Test Pulse width lt 300us Duty cycle lt 2 5 Essentially independent of operating temperature 1 Repetitive Rating Pulse width limited by maximum junction temperature 2 L 1 8mH las 13 6A Vpp 25V Ra 25 Q Starting Ty 25 C 3 Isp 19A di dt lt 300A us Vpp lt BVpss Starting Ty 25 C Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVpss Drain Source Breakdown Voltage Ves 0 V Ip 250 uA 100 V ABVpss Breakdown Voltage Temperature lp 250 A Referenced to 25 C a 2 AT Coefficient D ig 0 1 V G Ipss Vos 100 V Vas 0 V E 1 uA Z Vol Drai ero Gate Voltage Drain Current Vos 80 V Tg 150 C 7 10 S lassr Gate Body Leakage Current Forward Vas 25 V Vps 0 V 100 nA lassr Gate Body Leakage Current Reverse Vas 25 V Vpg 0 V
7. SuperSOT 3 EZCMOSTM MICROWIRE SuperSOT 6 EnSigna OPTOLOGIC SuperSOT 8 FACT OPTOPLANAR SyncFET FACT Quiet Series POP TinyLogic FAST PowerTrench UHC DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY FUNCTION OR DESIGN FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS NOR THE RIGHTS OF OTHERS LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL As used herein 1 Life support devices or systems are devices or systems which a are intended for surgical implant into the body or b support or sustain life or c whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user PRODUCT STATUS DEFINITIONS Definition of Terms Formative or In Design Advance Information Preliminary First Production No Identification Needed Full Production Obsolete Not In Production 2 A critical component is any component of a life support device or system whose failure to perform can be reasonably expected t
8. o cause the failure of the life support device or system or to affect its safety or effectiveness This datasheet contains the design specifications for product development Specifications may change in any manner without notice This datasheet contains preliminary data and supplementary data will be published at a later date Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design This datasheet contains final specifications Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor The datasheet is printed for reference information only 2000 Fairchild Semiconductor International Rev F1
Download Pdf Manuals
Related Search
FAIRCHILD FQPF19N10 100V N Channel MOSFET Manual