INFINEON BTS 6142D Manual
Contents
1. mit 56 II osna i TT per side E in 0 5006 1 56 bp 4 1025 9 A B L7 T3T8 FOOTPRINT 10 6 0 8 1 Includes mold flashes on each side j all metal sufaces tin plated except area of cut 22 Green Product RoHS compliant To meet the world wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product Green products are RoHS Compliant i e Pb free finish on leads and suitable for Pb free soldering according to IPC JEDEC J STD 020 You can find all of our packages sorts of packing and others in our Infineon Internet Page Products http www infineon com products SMD Surface Mounted Device Dimensions in mm Data Sheet 27 V1 1 2007 02 28 Cinfineon 6 Smart High Side Power Switch BTS 6142D Revision History Revision History Version Date Changes V1 1 07 02 28 ROHS compliant version of BTS 6142D changed IFX logo page 3 Ordering code removed page 3 AEC qualified and RoHS logos added page 3 page 27 AEC Stress Test Qualification and Green Product RoHS compliant added to feature list page 3 page 27 Change to RoHS compliant package PG TO252 5 11 Legal disclaimer updated V1 0 05 10 25 i2. 20 20 Ron Vpp 12V Ron typ fn f na 10 10 5 5 0 0 40 0 40 80 C 160 0 2 4 6 8 V 12 T vo Figure 6 Typical On State Resistance At small load currents the resistance is artificially increased to improve current sense accuracy Therefore the forward voltage drop Voy at small load currents is no more proportional to the load current J but is controlled by an internal two level controller to remain clamped to a defined value Vonn Figure 7 shows the dependency for a typical device Data Sheet 11 V1 1 2007 02 28 on Smart High Side Power Switch Infineon BTS 6142D Power Stages V on2V ongni Figure 7 Typical Output Voltage Drop Limitation 4 1 3 Output Inductive Clamp When switching off inductive loads the output voltage Vour drops below ground potential due to the involved inductance di dt vj L Vout V_ OutputClamp emf Figure 8 Output Clamp To prevent destruction of the device there is a voltage clamp mechanism implemented that keeps the voltage drop across the device at a certain level VoncLy See Figure 8 and Figure 9 for details The maximum allowed load inductance is limited Data Sheet 12 V1 1 2007 02 28 on Smart High Side Power Switch Infineon BTS 6142D Power Stages InductiveLoad emf Figure 9 Switching an Inductance Maximum L
3. 10 12 Ti 40 150 C 7 5A 7 5 10 13 1 2 5A 6 5 10 16 1 0 5A 3 10 30 Tix 0 e g during de disabled energizing of inductive loads P 4 3 2 Sense saturation lisilim 2 5 6 10 mA Von lt 1 V typ current T 2 40 150 C 4 8 8 Sense current under Jisitauity 2 5 6 10 mA Von gt 1 V typ fault conditions Tj 2 40 150 C 4 3 4 Current sense lisqL 0 1 0 5 A liy O leakage current 4 3 5 Current sense offset Jis 0 1 1 pA Vin 0 IL lt 0 current 4 3 6 Minimum load current 7 yin 0 5 JA Vin 0 for sense functionality Tj 40 150 C 4 3 7 Current sense settling sons 350 700 ys I 0 20A time to 90 lig s T 2 40 150 C 4 3 8 Current sense settling facis x 50 100 us 1 10 20A time to 90 hg sia Tj 40 150 C 4 3 9 Fault Sense signal tdelay fault 200 650 1200 us Von gt 1 V typ delay after input T 40 150 C current positive slope 1 Not subject to production test specified by design Data Sheet 26 V1 1 2007 02 28 on Smart High Side Power Switch Infineon BTS 6142D Package Outlines BTS 6142D 5 Package Outlines BTS 6142D PG TO252 5 11 Plastic Dual Small Outline Package 0 15 0 05 2 3 0 10 6 5 0 05 S 1maxt r Tas al 0 508 9 98 0 5 6 22 02 4 24 140 1 ls la i 0 8 0 15
4. eee 20 4 2 6 Loss of Vbb Protection 0 cece ee 20 4 2 7 Electrical Characteristics liliis 21 4 3 DIAGNOSIS 2 er ie LLRLre 5 br Yd ee DR ge re PS pt 23 4 3 1 Electrical Characteristics llle 26 5 Package Outlines BTS 6142D uusseses esee eese 27 6 Revision History lslslselseeeele e III 28 Data Sheet 2 V1 1 2007 02 28 Cinfineon Smart High Side Power Switch BTS 6142D PROFET ALS RoHS s Qualified Product Summary PG TO252 5 11 The BTS 6142D is a one channel high side power Switch in PG TO252 5 11 package providing embedded protective functions including ReverSave M The power transistor is built by a N channel vertical power MOSFET with charge pump The design is based on Smart SIPMOS chip on chip technology Operating voltage Vob on 5 5 24V Over voltage protection VoN cL 39 V On State resistance Rps oN 12 mo Nominal load current li nom 7A Load current ISO Laso 27 A Current limitation lie sc 50A Stand by current for whole device with load lop oFF 6 uA Basic Features Very low standby current Current controlled input pin Improved electromagnetic compatibility EMC Fast demagnetization of inductive loads Stable behavior at under voltage Green Product RoHS compliant AEC qualified Type Package BTS 6142D PG TO252 5 11 Data Sheet 3 V1 1 2007 02 28 on Smart High Side Power Switch I
5. there is a clamp mechanism implemented for all logic pins See Figure 15 for details Ry z el Lg Ve SN a m W IN 8 H4 IS OUT OverVoltage emf Figure 15 Over Voltage Protection 4 2 5 Loss of Ground Protection In case of complete loss of the device ground connections the BTS 6142D securely changes to or remains in off state 4 2 6 Loss of Vpp Protection In case of complete loss of Vpp the BTS 6142D remains in off state In case of loss of Vpp connection with charged inductive loads a current path with load current capability has to be provided to demagnetize the charged inductances It is recommended to use a diode a Z diode or a varistor Vz Vp lt 39 V or Vzg Vp lt 16 V if Rin 0 For higher clamp voltages currents through IN and IS have to be limited to 120 mA Please refer to Figure 16 for details Vip L gt R inductive V inductive LOAD 1 ZL LOAD Vbb_disconnect_A emf Vbb_disconnect_B emf Figure 16 Loss of Vpb Data Sheet 20 V1 1 2007 02 28 Cinfineon 4 2 7 Smart High Side Power Switch BTS 6142D Electrical Characteristics Vpp 12 V Tj 25 C unless otherwise spe
6. ucp 4 5 5 V of charge pump 4 1 4 Operating current IN 14 22 mA Tj 40 150 C 4 1 5 Stand by current lob oFF HA IN 20A Tj 40 C Tj 25 C 3 6 Tj 120 C 3 6 Tj 150 C 9 16 Input characteristics 4 1 6 Input current for TiN on s 1 4 2 2 mA Von Vbb ucp Vin turn on T 40 150 C 4 1 7 Input current for Tincoft 30 HA Tjz 40 150 C turn off Output characteristics 4 1 8 On state resistance Rps ow m Viy OV 1 27 5A Ti 25 C 10 12 Tab to pin 1 and T 150 C 17 22 5 Vpp 5 5V T 25 C 12 17 Vbp 5 5V Tj 150 C 22 29 4 1 9 Output voltage drop VoNn NL 30 65 mV Ti 40 150 C limitation at small load currents 4 1 10 Nominal load current J nom 7 8 5 JA Ta 85 C Tab to pint amp 5 2 9 Von 0 5 V Tj lt 150 C ISO load current li 80 27 33 JA To 85 C Tab to pin 1 amp 5 9 Von 0 5 V Tj lt 150 C Data Sheet 15 V1 1 2007 02 28 Cinfineon Smart High Side Power Switch BTS 6142D Vpb 12 V Tj 25 C unless otherwise specified Power Stages Pos Parameter Symbol Limit Values Unit Test Conditions min typ max 4 1 11 Output clamp Vonc 39 42 JV I 40 mA 4 1 12 Inverse current output Voniinv mV z 7 5A voltage drop 1 4 Rig 1kQ Tab to pin 1 and 5 T 25 C 800 Tj 150 C 600 Timings 4 1 13 Turn on time to ton 250 600 U
7. 28 on Smart High Side Power Switch Infineon BTS 6142D Protection Functions 4 2 Protection Functions The device provides embedded protective functions Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet Fault conditions are considered as outside normal operating range Protection functions are neither designed for continuous nor repetitive operation 4 2 1 Over Load Protection The load current 7 is limited by the device itself in case of over load or short circuit to ground There are multiple steps of current limitation Ixso which are selected automatically depending on the voltage drop Voy across the power DMOS Please note that the voltage at the OUT pin is Vpb Von Figure 11 shows the dependency for a typical device 120 sc e 80 0 10 20 Vv 40 V owsc y Figure 11 Typical Current Limitation Depending on the severity of the short condition as well as on the battery voltage the resulting voltage drop across the device varies Whenever the resulting voltage drop Voy exceeds the short circuit detection threshold Von sc the device will switch off immediately and latch until being reset via the input The Vow sc detection functionality is activated when Voy 10V typ and the blanking time fy gc1 expired after switch on In the event that either the short circuit detection via Vow sc is not ac
8. BTS 6142D Smart High Side Power Switch PROFET One Channel 12 mQ Cinfineon thinking on Smart High Side Power Switch Infineon BTS 6142D Table of Contents Page Product Summary 2 2 02 5005s eee eee a dm ka damna 3 1 Overview 2 66 sche eine nei biG be ep REA YA RERO E a wd Eq X pue V 5 1 1 Block Diagram ecu erdum em een or Rr LA Yel demde Deng 5 1 2 Terms pr ri thee ad ed WEEDS TEE E IR P PEE res dde ewe a s 6 2 Pin Configuration 0 0 eh 7 2 1 Pin Assignment BTS 6142D lsseseeeeeee eee 7 2 2 Pin Definitions and Functions 0 0 0 e 7 3 Electrical Characteristics 0 0 cece eee 8 3 1 Maximum Ratings 223 2 4 ese e Re ge ee ERREUR Y 8 4 Block Description and Electrical Characteristics 10 4 1 Power Stages imcccs cde dee qudd dee weed e tack e a dog 10 43 T Input CIFGUlE iesus cre acere pera Pede dr emer etat es wont A 10 4 1 2 Output On State Resistance 0 0 0 cee eee 11 4 1 3 Output Inductive Clamp 2 0 00 c eect ee 12 4 1 4 Electrical Characteristics 2 2 0 0 0 ccc 15 4 2 Protection Functions 000 eee eee eee nh 17 4 2 1 Over Load Protection 0 000 eects 17 4 2 2 Short circuit impedance 00 18 4 2 3 Reverse Polarity Protection ReversaveTM 20 000 18 4 2 4 Over Voltage Protection 0 0 c ects 20 4 2 5 Loss of Ground Protection 0 0 cc cece
9. cified Protection Functions Pos Parameter Symbol Limit Values Unit Test Conditions min typ max Over Load Protection 4 2 1 Load current limitation 9 7 e sc A Von 6 V Tj 40 C 110 160 Tab to pin 1 and Tj 25 C 100 5 Tj 150 C 50 75 4 2 2 Load current limitation Ij 1 sc A Von 12 V Tj 40 C 90 120 tm 170 us Tj 25 C 80 Tab to pin 1 and Tj 150 C 45 70 5 4 2 8 Load current limitation Ij 48 Sc A Von 18 V Tj 40 C 60 90 Tab to pin 1 and T 25 C 60 5 Tj 150 C 30 50 4 2 4 Load current limitation J o4 sc A Von 24 V Tj 40 C s 40 tm 170 us Tj 25 C 40 Tab to pin 1 and Tj 150 C 35 5 4 2 5 Load current limitation I soc A Von 30 V Tj 40 C 25 Tab to pin 1 and T 425 C BB 5 Tj 150 C 25 4 2 6 Shortcircuitshutdown Vongc 25 3 5 4 5 V Voin gt 10 V typ detection voltage 1 4 2 7 Shortcircuit shutdown t4 SC1 200 650 1200 us Von gt Von sc delay after input T 40 150 C current pos slope 4 2 8 Thermal shut down Tiso 150 165 C temperature 1 4 2 9 Thermal hysteresis AT 10 K Data Sheet 21 V1 1 2007 02 28 Cinfineon Smart High Side Power Switch BTS 6142D Vpb 12 V Tj 25 C unless otherwise specifi
10. ck provides at normal operation a sense current proportional to the load current in case of overload over temperature and or short circuit a defined current is provided see Table 1 Truth Table on Page 23 5 OUT O Output output to the load pin 1 and 5 must be externally shorted 1 Not shorting all outputs will considerably increase the on state resistance reduce the peak current capability the clamping capability and decrease the current sense accuracy Data Sheet 7 V1 1 2007 02 28 on Smart High Side Power Switch Infineon BTS 6142D Electrical Characteristics 3 Electrical Characteristics 3 1 Maximum Ratings Stresses above the ones listed here may cause permanent damage to the device Exposure to maximum rating conditions for extended periods may affect device reliability T 25 C unless otherwise specified Pos Parameter Symbol Limit Values Unit Test min max Conditions Supply Voltage 3 1 1 Supply voltage Vop 16 38 IV 3 1 2 Supply voltage for full short Vob sC 0 24 V circuit protection single pulse Tj 40 C 150 C 3 1 3 Supply Voltage for Load Dump Vbb LD 45 V Ri 2Q0 protection 2 R 21590 Logic Pins 3 1 4 Voltage at input pin Vp N 16 63 V 3 1 5 Current through input pin IN 140 15 mA 3 1 6 Voltage at current sense pin Vp is 16 56 V 3 1 7 Current throu
11. ed Protection Functions Pos Parameter Symbol Limit Values Unit Test Conditions min typ max Reverse Battery 4 2 10 On State resistance Ronirev m Vin 0 in case of reverse Ij 7 5A polarity Rig 1 KQ Vpp 8V 7 25 C 12 16 pin 1 and 5 to Vpp 8V T 150 C 1 w 20 27 TAB Vpp 12V Ti 25 C 12 15 Vpp 12V 7 150 C 18 24 4 2 11 Integrated resistor in Rpp 100 150 Q Vp line Over Voltage 4 2 12 Over voltage Vz V Igg 15 mA protection T 40 150 C Input pin V7 iN 63 67 JV Sense pin Vzis 56 61 V 1 Not subject to production test specified by design 2 Short circuit current limit for max duration of la sc1 Prior to shutdown see also Figure 12 3 Data Sheet min value valid only if input off signal time exceeds 30 us 22 V1 1 2007 02 28 on Smart High Side Power Switch Infineon BTS 6142D Diagnosis 4 3 Diagnosis For diagnosis purpose the BTS 6142D provides an IntelliSense signal at the pin IS The pin IS provides during normal operation a sense current which is proportional to the load current as long as Vs g gt 5V The ratio of the output current is defined as kj js 4 Tis During switch on no current is provided until the forward voltage drops below Voy 1V typ The output sense current is limited to Zis jim The pin IS provides in case of any fault conditions a defined fault curr
12. ent g faun Fault conditions are over current Voy gt 1V typ current limit or over temperature switch off The pin IS provides no current during open load in ON de energisation of inductive loads and inverse current mode Sense emf Figure 17 Block Diagram Diagnosis Table 1 Truth Table Parameter Input Current Output Level Current Sense Jis Level Normal LU L 0 list operation H H nominal Overload L L 0 isu H H Tis fault Short circuit to GND L L 0 lis H L Tis fault Overtemperature L L 0 lis H L Tis fautt Short circuit to Vy L H 0 ist H H lt nominal Open load L z 0 Jis tt H H 0 lisque Data Sheet 23 V1 1 2007 02 28 on Smart High Side Power Switch Infineon BTS 6142D Diagnosis 1 H High Level L Low Level Z high impedance potential depends on external circuit 2 Low ohmic short to Vpb May reduce the output current and therefore also the sense current Js The accuracy of the provided current sense ratio ky s J Jig depends on the load current Please refer to Figure 18 for details A typical resistor Rig of 1kQ is recommended 20000 Kis d t 15000 10000 5000 07 0 5 10 15 20 A 30 lL min I Figure18 Current sense ratio kius Details about timings between the diagnosis signal Js the forward voltage drop Vo
13. features are not designed for continuous repetitive operation Data Sheet V1 1 2007 02 28 on Smart High Side Power Switch Infineon BTS 6142D Power Stages 4 Block Description and Electrical Characteristics 4 1 Power Stages The power stage is built by a N channel vertical power MOSFET DMOS with charge pump 4 1 1 Input Circuit Figure 4 shows the input circuit of the BTS 6142D The current source to Vpp ensures that the device switches off in case of open input pin The zener diode protects the input circuit against ESD pulses bb A V d IN E li T Vin a Figure 4 Input Circuit Input emf A high signal at the required external small signal transistor pulls the input pin to ground A logic supply current Jy is flowing and the power DMOS switches on with a dedicated slope which is optimized in terms of EMC emission SwitchOn emf Figure 5 Switching a Load resistive Data Sheet 10 V1 1 2007 02 28 om Smart High Side Power Switch Infineon BTS 6142D Power Stages 4 1 2 Output On State Resistance The on state resistance Rps ow depends on the supply voltage as well as the junction temperature Ti Figure 6 shows these dependencies for the typical on state resistance The on state resistance in reverse polarity mode is described in Section 4 2 3
14. gh sense pin lis 140 15 mA 3 1 8 Input voltage slew rate 9 dVyw dt 20 20 Vius Power Stages 3 1 9 Load current I Iyyscy A l 3 1 10 Maximum energy dissipation Eas 0 25 J li o 20 A per channel single pulse Tyo 150 C 3 1 11 Total power dissipation DC Pio 50 W Tg 85 C for whole device Tj lt 150 C Temperatures 3 1 12 Junction temperature Ti 40 150 C 3 1 13 Storage temperature Tstg 55 150 C Data Sheet 8 V1 1 2007 02 28 Cinfineon Smart High Side Power Switch BTS 6142D T 25 C unless otherwise specified Electrical Characteristics Pos Parameter Symbol Limit Values Unit Test min max Conditions ESD Susceptibility 3 1 14 ESD susceptibility HBM Vesp 3 3 kV j according to EIA JESD 22 A 114B 1 Short circuit is defined as a combination of remaining resistances and inductances See Figure 13 2 Load Dump is specified in ISO 7637 R is the internal resistance of the Load Dump pulse generator 3 Slew rate limitation can be achieved by means of using a series resistor for the small signal driver or in series in the input path A series resistor Ry in the input path is also required for reverse operation at Vpp lt 16V See also Figure 14 4 Current limitation is a protection feature Operation in current limitation is considered as outside normal operating range Protection
15. nfineon BTS 6142D Protective Functions e ReverSave M channel switches on in case of reverse polarity Reverse battery protection without external components Short circuit protection with latch Over load protection Multi step current limitation Thermal shutdown with restart Over voltage protection including load dump Loss of ground protection e Loss of Vy protection with external diode for charged inductive loads Electrostatic discharge protection ESD Diagnostic Functions Proportional load current sense with defined fault signal in case of overload operation over temperature shutdown and or short circuit shutdown Open load detection in ON state by load current sense Applications e uC compatible high side power switch with diagnostic feedback for 12 V grounded loads All types of resistive inductive and capacitive loads Most suitable for loads with high inrush currents so as lamps Replaces electromechanical relays fuses and discrete circuits Data Sheet 4 V1 1 2007 02 28 e Smart High Side Power Switch Overview 1 Overview The BTS 6142D is a one channel high side power switch 12 mQ in PG TO252 5 11 power package providing embedded protective functions including ReverSave M ReverSave is a protection feature that causes the power transistors to switch on in case of reverse polarity As a result the power dissipation is reduced The BTS 6142D has a current con
16. nitial version of Final Data Sheet Data Sheet 28 V1 1 2007 02 28 Smart High Side Power Switch Infineon BTS 6142D Edition 2007 02 28 Published by Infineon Technologies AG 81726 Munich Germany Infineon Technologies AG 3 1 07 All Rights Reserved Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics Beschaffenheitsgarantie With respect to any examples or hints given herein any typical values stated herein and or any information regarding the application of the device Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without limitation warranties of non infringement of intellectual property rights of any third party Information For further information on technology delivery terms and conditions and prices please contact your nearest Infineon Technologies Office www infineon com Warnings Due to technical requirements components may contain dangerous substances For information on the types in question please contact your nearest Infineon Technologies Office Infineon Technologies Components may only be used in life support devices or systems with the express written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life support device or system or to affect the safety or effectiveness of that device
17. oad Inductance While de energizing inductive loads energy has to be dissipated in the BTS 6142D This energy can be calculated via the following equation E e Vonen ec tomci m qy p th zn d RL Vonict Vo R In the event of de energizing very low ohmic inductances R 0 the following simplified equation can be used 1 2 _ Yoneu E LI 2 Vonn Vb The energy which is converted into heat is limited by the thermal design of the component For given starting currents the maximum allowed inductance is therefore limited See Figure 10 for the maximum allowed inductance at Vpp 12V Data Sheet 13 V1 1 2007 02 28 on Smart High Side Power Switch Infineon BTS 6142D Power Stages 0 1 0 01 1 10 A 100 Figure 10 Maximum load inductance for single pulse T Start 150 C Data Sheet 14 V1 1 2007 02 28 Cinfineon 4 1 4 Smart High Side Power Switch BTS 6142D Electrical Characteristics Vbp 12 V Tj 25 C unless otherwise specified Power Stages Pos Parameter Symbol Limit Values Unit Test Conditions min typ max General 4 1 1 Operating voltage Vop 5 5 38 V VN20V T 40 150 C 4 1 2 Undervoltage VoiN u E 2 5 3 5 V shutdown 4 1 3 Undervoltage restart Vbb
18. or system Life support devices or systems are intended to be implanted in the human body or to support and or maintain and sustain and or protect human life If they fail it is reasonable to assume that the health of the user or other persons may be endangered Data Sheet 29 V1 1 2007 02 28 http www infineon com Published by Infineon Technologies AG
19. rsave functionality In reverse polarity condition the channel will be switched on provided a sufficient gate to source voltage is generated Vas Vgpp Please refer to Figure 14 for details Data Sheet 18 V1 1 2007 02 28 on Smart High Side Power Switch Infineon BTS 6142D Protection Functions E Vos signal ground power ground Reverse emf Figure 14 Reverse battery protection Additional power is dissipated by the integrated Rpp resistor Use following formula for estimation of overall power dissipation Pyiss rey in reverse polarity mode 2 2 P diss rev e Ronrev 1 I T Rob Teo For reverse battery voltages up to V5p 16V the pin IN or the pin IS should be low ohmic connected to signal ground This can be achieved e g by using a small signal diode D in parallel to the input switch or by using a small signal MOSFET driver For reverse battery voltages higher then V5y gt 16V an additional resistor Riy is recommended For reverse battery voltages higher then V gt 16 the overall current through Rpp should be about 80mA 1 1 _ _0 08A Rin Ris Vee 12V Note No protection mechanism is active during reverse polarity The IC logic is not functional Data Sheet 19 V1 1 2007 02 28 rm Smart High Side Power Switch Infineon BTS 6142D Protection Functions 4 2 4 Over Voltage Protection Beside the output clamp for the power stage as described in Section 4 1 3
20. s R 2 2 Q 90 Vip Tj 2 40 150 C 4 1 14 Turn off time to 1OFF 250 600 Us R 2 2 Q 10 Vp T 40 150 C 4 1 15 Turn on delay after ta inv B 1 ms Vbb gt Vout inverse operation 1 Vin inv ViN twa 0 V 4 1 16 Slew rate On dV dton 0 3 0 7 Wus R 2 2Q 25 to 50 Vpp T 40 150 C 4 1 17 Slew rate Off dV 0 3 0 7 V us R 2 2Q 50 to 25 Vpp dtorr T 40 150 C Thermal Resistance 4 1 18 Junction to case Rijo 13 IKW 4 1 19 Junction to ambient Rinja KW free air 80 a device on PCB 45 55 1 Not subject to production test specified by design 2 Device mounted on PCB 50 mm x 50 mm x 1 5mm epoxy FR4 with 6 cm copper heatsinking area one layer 70 um thick for Vpp connection PCB is vertical without blown air Not subject to production test parameters are calculated from Rps on and Rin 4 Permanent Inverse operation results eventually in a current flow via the intrinsic diode of the power DMOS In this case the device switches on with a time delay fq iny after the transition from inverse to forward mode A sense current lis faui can be provided by the pin IS until standard forward operation is reached Note Characteristics show the deviation of parameter at the given supply voltage and junction temperature Typical values show the typical parameters expected from Data S manufacturing heet 16 V1 1 2007 02
21. tivated or that the on chip temperature sensor senses over temperature before the blanking time ty sc1 expired the device switches off resulting from over temperature detection After cooling down with thermal hysteresis the devices switches on again Please refer to Figure 12 for details Data Sheet 17 V1 1 2007 02 28 on Smart High Side Power Switch Infineon BTS 6142D Protection Functions Von sc detection Over temperature detection wtf l1 t Ibn lur vy t v TR p 70 t V ON detect emf Over Temp emf Figure 12 Overload Behavior 4 2 2 Short circuit impedance The capability to handle single short circuit events depends on the battery voltage as well as on the primary and secondary short impedance Figure 13 outlines allowable combinations for a single short circuit event of maximum secondary inductance for given secondary resistance L 4 L sc Von Lsc 4 5uH IN OUT AOA uH PROFET Ro 10mQ IS Vos T SHORT Q CIRCUIT o d J 0 50 100 mQ 200 short circuit emf JMP Rsc Figure 13 Short circuit 4 2 3 Reverse Polarity Protection Reversave The device can not block a current flow in reverse battery condition In order to minimize power dissipation the device offers Reve
22. trolled input and offers a diagnostic feedback with load current sense The design is based on Smart SIPMOS chip on chip technology 1 1 Block Diagram over tem perature IN inductive load gate eus EHE hn s pump oed IS OUT V load current IS sense Vin v IS Fenian voltage drop detection Ris Figure 1 Block Diagram Data Sheet 5 V1 1 2007 02 28 on Smart High Side Power Switch Infineon BTS 6142D Overview 1 2 Terms Following figure shows all terms used in this data sheet Voo Voin Vois Vo Von Y PN VBB e IN Vin BTS 6142D IN lis A Y iis OUTLL 2 Vs Vour Ris vov Y Y Terms emf Figure 2 Terms Data Sheet 6 V1 1 2007 02 28 on Smart High Side Power Switch Infineon BTS 6142D Pin Configuration 2 Pin Configuration 2 1 Pin Assignment BTS 6142D TO252 5 emf Figure 3 Pin Configuration PG TO252 5 11 2 2 Pin Definitions and Functions Pin Symbol I O Function 1 OUT O Output output to the load pin 1 and 5 must be externally shorted 2 IN Input activates the power switch if shorted to ground 3 Tab Vbb Supply Voltage positive power supply voltage tab and pin 3 are internally shorted 4 IS O Sense Output Diagnostic feedba
23. y and the load current in ON state can be found in Figure 19 Note During operation at low load current and at activated forward voltage drop limitation the two level control of Voy can cause a sense current ripple synchronous to the two level control of Voy The ripple frequency increases at reduced load currents 1 The curves show the behavior based on characterization data The marked points are guaranteed in this Data Sheet in Section 4 3 1 Position 4 3 1 Data Sheet 24 V1 1 2007 02 28 on Smart High Side Power Switch Infineon BTS 6142D Diagnosis In A normal operation I a Short Lf E Vont Von lt 1V typ Von gt 1V typ t Von Von Vonse X l X t X IA L2 A I L1 71 Lx SC lul t ls liso IS im IS fauf ls I s raut 0 9 I s lisa IS LL gt le M t gt lt Lots bcs Uetay faut Sache Witci emi Figure 19 Timing of Diagnosis Signal in ON state Data Sheet 25 V1 1 2007 02 28 Cinfineon 4 3 1 Smart High Side Power Switch BTS 6142D Electrical Characteristics Vbp 12 V Tj 25 C unless otherwise specified Diagnosis Pos Parameter Symbol Limit Values Unit Test Conditions min typ max Load Current Sense 4 3 1 Current sense ratio kj js 10 Jk Vin 0V static on condition lis lt Tis tim I 30A 8
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INFINEON BTS 6142D Manual bts724gxuma1/infineon