INFINEON IDT16S60C handbook
Contents
1. W 20 10 0 5 10 15 20 Trav A 7 Transient thermal impedance Zwof l p parameter D t T 10 10 107 Z insc K W single pulse 10 t s Rev 2 0 IDT16S60C 6 Typ reverse current vs reverse voltage I R f VpR parameter T In pA 25 10 10 10 10 10 100 200 300 400 500 600 Vg V 8 Typ capacitance vs reverse voltage C f VpR Tc 25 C f 1 MHz C pF 800 700 600 500 400 300 200 100 107 10 10 10 10 Va IV 2006 03 14 Cinfineon IDT16S60C 9 Typ C stored energy 10 Typ capacitance charge vs current slope E c f VR Q c f di fat T5150 C Isl Fmax 20 40 16 30 12 3 3 20 m e 8 10 4 0 0 0 100 200 300 400 500 600 100 400 700 1000 Va V digldt A us Rev 2 0 page 5 2006 03 14 Infineon Package Outline PG TO220 2 2 TO220 2 2 IDT16S60C TA gP E 4 03550e aAM A1 a 0 1 e a A3 5 ahs el a a MILLIMETERS INCHES REFERENCE MIN MAX MIN MAX UR A 4 191 4 699 0 165 0 185 A1 1 170 1 400 0 046 0 055 scale 23 A2 2215 2718 0 087 0 107 3 b 0 635 0 889 0 025 0 035 253 b2 0 950 1 651 0 037 0 065 E c 0 330 0 635 0 013 0 025 0 CUM D2. 14 808 15 850 0 583 0 628 ee ee D1 8 509 9 450 0 335 0 372 D2 12 850 14 245 0 506 0 561 EUSOGHEANIPREJEETION E 8 677 10 363 0 381 0 408 E1 6 500 8 788 0 256 0 346 e 2 540 0 100 7 et 5 080 0 200 N 2 2 H1 5 900 6 900 0 232 0 272 ISSUEIDATE L 12 700 14 000 0 500 0 551 t IS L1 3 048 4 600 0 120 0 189 oP 3 550 3 886 0 140 0 153 FILE a 2 540 3 048 0 100 0 120 To220 3 Dimensions in mm Rev 2 0 page 6 2006 03 14 Cinfineon IDT16S60C Published by Infineon Technologies AG 81726 M nchen Germany Infineon Technologies AG 2006 All Rights Reserved Attention please The information herein is given to describe certain components and shall not be considered as warranted characteristics Terms of delivery and rights to technical change reserved We hereby disclaim any and all warranties including but not limited to warranties of non infringement regarding circuits descriptions and charts stated herein Infineon Technologies is an approved CECC manufacturer Information For further information on technology delivery terms and conditions and prices please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide see address list Warnings Due to technical requirements components may contain dangerous substances For information on the types in question please contact your nearest Infineon Technologies office Infineon Technol
3. Cinfineon IDT16S60C nd A TM a A 2 Generation thinQ SiC Schottky Diode Product Summaty Features Voc eoo v Revolutionary semiconductor material Silicon Carbide Q 38 c Switching behavior benchmark um 16 No reverse recovery No forward recovery No temperature influence on the switching behavior High surge current capability PG TO220 2 2 Pb free lead plating RoHS compliant Qualified according to JEDEC for target applications Breakdown voltage tested at 5mA thinQ 2G Diode specially designed for fast switching applications like CCM PFC Motor Drives Type Package Marking IDT16S60C PG TO220 2 2 D16S60C Maximum ratings at 7 25 C unless otherwise specified Continuous forward current mn Tc 140 C RMS forward current f 50 Hz 23 Surge non repetitive forward current E m A 50 C Repetitive peak forward current T 7100 C D 0 1 mo Non repetitive peak forward current Tc 25 C tp 10 us Repetitive peak reverse voltage Ward AA ds V Diode dv dt ruggedness Vins Power dissipation To 25 C W Operating and storage temperature T T stg en MENN C Rev 2 0 page 1 2006 03 14 Cinfineon IDT16S60C Parameter Symbol Conditions Values me te mex Thermal characteristics Thermal resistance junction case aa fw Thermal resistance R leaded junction ambient ma Soldering temperature 1 6mm 0 063 in from wavesoldering only allowed
4. at leads case for 10s Electrical characteristics at 7 725 C unless otherwise specified Static characteristics DC blocking voltage Diode forward voltage Reverse current AC characteristics Total capacitive charge Switching time Total capacitance J STD20 and JESD22 2 All devices tested under avalanche conditions for a time periode of 5ms at 5 mA a t is the time constant for the capacitive displacement current waveform independent from Tj l o45 and di dt different from t which is dependent on Tj l op di dt No reverse recovery time constant t due to absence of minority carrier injection a Only capacitive charge occuring guaranteed by design Rev 2 0 page 2 2006 03 14 Cinfineon 1 Power dissipation Pio f T c parameter Rinjc max 140 120 100 80 P tot W 60 40 20 25 50 75 100 125 150 175 200 Tc PC 3 Typ forward characteristic lF f V e tp 400 us parameter T 25 20 Rev 2 0 page 3 IDT16S60C 2 Diode forward current la f To T 8175 C parameter Rinjo max V Fmax 35 He A a 25 50 75 100 125 150 175 200 Tc PC 4 Typ forward characteristic in surge current mode la f V p 400 us parameter T 160 120 40 Vr V 100 C 150 C 2006 03 14 Cinfineon 5 Typ forward power dissipation vs average forward current P e Ay7f I p Tc 100 C parameter D t T 60 50 40 30 Pav
5. ogies components may only be used in life support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life support device or system or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body or to support and or maintain and sustain and or protect human life If they fail it is reasonable to assume that the health of the user or other persons may be endangered Rev 2 0 page 7 2006 03 14
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INFINEON IDT16S60C handbook