INFINEON SPP11N65C3 handbook
Contents
1. Typical Transient Thermal Characteristics Symbol LETS Unit e aT E Re 003 0 0007106 00007106 Ria 0197 0194 0 002701 0 002791 Res 0216 0418 0 0 007285 0 007401 Ring 0 083 2 522 Cir 0 063 0 412 External Heatsink Rth n i Tense 2 9 4 2007 08 30 07 Infineon technologies 1 Power dissipation Piot f Tc 0 5 11 65 TONAT HONE dU NI 0 20 40 60 80 100 120 160 Tc 3 Safe operating area Ip f Vos parameter D 0 25 10 ID Rev 2 9 SPP11N65C3 SPA11N65C3 SPI11N65C3 2 Power dissipation FullPAK Prot Ptot 4 Safe operating area FullPAK lp parameter D 0 25 C 2007 08 30 07 f Infineon SPP11N65C3 SPA11N65C3 technologies SPI11N65C3 5 Transient thermal impedance FullPAK 6 Typ output characteristic f L 25 parameter D t yt parameter f 10 us Vas 10 iiid Ho ZthJC SE aii E i x St ati aa Si Sts D 0 01 single pulse 103 AA LA a imi i i a A 10 10 19 40 40 102 40 s 10 0 3 6 9 1 15 18 21 V 27 fp Vbs 7 Typ output characteristic 8 Typ drain source on resistance Ip f Vps Tj7190 C F ps on fUb parameter fp 10 us Ves parameter 7 7150 C Vas lt2. Fall time Gate Charge Characteristics S o tr on Vpp 380V 0 10 off Gate to source charge Ys Rise time e Ip 11A 2 VDD 480V lp 11A Gate to drain charge Gate charge total Vpp 480V Ip 711A 0 to 10V Gate plateau voltage 480V In 211A C Ir Q V lt O1 AINI J STD20 and JESD22 1Limited only by maximum temperature Repetitve avalanche causes additional power losses that can be calculated as av Ear f JDevice on 40mm 40mm 1 5mm epoxy FR4 with one layer 70 thick copper area for drain connection PCB is vertical without blown air is a fixed capacitance that gives the same stored energy while Vps is rising from 0 to 80 Cotte is a fixed capacitance that gives the same charging time as Coss while Vps is rising from 0 to 80 Vpss Rev 2 9 Page 3 2007 08 30 07 Infineon technologies SPP11N65C3 SPA11N65C3 SPI11N65C3 Electrical Characteristics Parameter Symbol Conditions Unit Inverse diode continuous 25 11 forward current Inverse diode direct current long pulsed Inverse diode forward voltage Reverse recovery time Vg 7480V F ls Reverse recovery charge dip dt 100A us Peak reverse recovery current Peak rate of fall of reverse 25 1200 Alus
3. RDS on LI 0 2 4 6 8 10 12 14 16 20 D Rev 2 9 Page 6 2007 08 30 O LC lt v lt 2 O LC v v7 0 SPI11N65C3 technologies 10 Typ transfer characteristics 9 Drain source on state resistance f Vas Vps2 2 x Ip X Rps on max parameter f 10 us ar cakes oy We pe oe eee A T LAN Vo rt Met a Vas 10V SPP11N65C3 parameter p a 15 Ves je 12 Forward characteristics of body diode 11 Typ gate charge Ves f QGate f Vsp tp 10 us parameter p 11 A pulsed 20 Hitt tt tt Hitt tt tot HELL tt tt DON up at a 1 ee es TT se 71l NAHAN KARA dele X ur EE RTT Trt 4 Boe 8 7 nun Q 9 2 lt es 3l 5 11 65 hc WE EE EI rum Jaa i cS CR up n E As Ac c em pos MS 5 EE EE p ETE pod plex all
4. 0003318 1 17 1 40 0 046 0 055 2 2 15 2 72 0 085 0 107 SCALE 0 b 0 65 0 86 0 026 0 034 bi 0 95 1 40 0 037 0 055 25 b2 0 95 1 15 0 037 0 045 b3 065 1415 00200 0045 0 33 0 60 0 013 0 024 anm D 14 81 15 95 0 583 0 628 D1 8 51 9 45 0 335 0 372 EUROPEAN PROJECTION D2 12 19 13 10 0 480 0 516 9 70 10 36 0 382 0 408 6 50 8 50 0 256 0 339 2 54 0 100 1 5 08 0 200 a ISSUE DATE H1 5 90 6 90 0 232 0 272 23 08 2007 L 13 00 14 00 0 512 0 551 L1 4 80 0 189 REVISION oP 360 3 89 042 015 2 60 3 00 0 102 0 118 Rev 2 9 12 2007 08 30 SPP11N65C3 SPA11N65C3 SPI11N65C3 EUROPEAN PROJECTION 3 15 3 50 0 124 0 138 Rev 2 9 13 2007 08 30 InFineon technologies SPP11N65C3 SPA11N65C3 SPI11N65C3 PG TO262 3 1 PG TO262 3 21 2 D1 L1 e 025485 5 A8 MILLIMETERS 5965 140 005 3 0055 1 2 0330 0 600 ISSUE DATE 05 05 2006 FILE TO262 1 2007 08 30 e Infineon technologies SPP11N65C3 SPA11N65C3 SPI11N65C3 Published by Infineon Technologies AG Bereichs Kommunikation St Martin Strasse 53 D 81541 Munchen Infineon Technologies AG 1999 All Rights Reserved Attention please The information herein is given to de
5. case Rae d s K W Thermal resistance junction case FullPAK Iscr ue qi Thermal resistance junction ambient leaded Rwa l6 Thermal resistance junction ambient FullPAK ee 17801 SMD version device on PCB Fin JA min footprint 62 6 cm cooling area 3 35 Soldering temperature wavesoldering T sold 260 1 6 mm 0 063 in from case for 10s Electrical Characteristics at 25 unless otherwise specified Parameter Conditions Unit mm um Drain source breakdown voltage 650 Drain Source avalanche 5 0 4 730 ns UP Zero gate voltage drain current loss lt 600 Vas 0V UA Tj 25 C 0 1 1 Tj 150 C 100 Gate source leakage current less lt 20 Vps 0V 3904 Drain source on state resistance Rps on VGs 10V 7 Q Tj 25 C 0 34 0 38 1 150 0 92 Rev 2 9 Page 2 2007 08 30 SPP11N65C3 SPA11N65C3 SPI11N65C3 technologies Electrical Characteristics Parameter Symbol Conditions Values Unit Transconductance 9 Vps22 lp Rps on max Input capacitance 0 Vps725V Output capacitance f 1MHz Reverse transfer capacitance Effective output capacitance 9 TI Ves OV Vps 0V to 480V energy related Effective output capacitance time related 25 o Turn on delay time Turn off delay time 6 80 IB N CO lt
6. e Infineon technologies SPP11N65C3 SPA11N65C3 SPI11N65C3 Cool MOS Power Transistor Feature Rps on e New revolutionary high voltage technology e Ultra low gate charge e Periodic avalanche rated PG TO262 PG TO220FP 220 e Extreme dv dt rated lt gt pue e High peak current capability PERS e Improved transconductance 0 Pb free lead plating RoHS compliant Qualified according to JEDEC for target applications Package Ordering Code Marking PG TO220 067040 54557 11 65 3 PG TO220FP SP000216318 11N65C3 SPI11N65C3 PG TO262 Q6 040 S4561 11N65C3 Maximum Ratings Parameter Symbol Unit SPPI SPA Continuous drain current Ip A To 25 11 111 100 7 71 Pulsed drain current f limited by Timax A 3 Avalanche energy single pulse EAS 340 340 mJ 2 Vpp 90V 4 D Avalanche energy repetitive tap limited by Vpp 50V hg 4 4 R Avalanche current repetitive tap limited by Timax S Gate source voltage Vc Gate source voltage AC f gt 1Hz Operating and storage temperature 55 150 C Rev 2 9 Page 1 2007 08 30 07 Infineon technologies SPP11N65C3 SPA11N65C3 SPI11N65C3 Maximum Ratings Parameter Symbol Unit Drain Source voltage slope dv dt 50 V ns Vps 480 V Ip 11 A T 125 C Thermal Characteristics Parameter Symbol Unit Thermal resistance junction
7. g cp co CN O N O v gt v v SUA 4 VSD 2007 08 30 M ate Page 7 Rev 2 9 _ f Infineon SPP11N65C3 SPA11N65C3 technologies SPI11N65C3 13 Typ switching time 14 Typ switching time t f Ip inductive load 125 t f Rg inductive load 7 125 par V5gs7380V 0 13 6 80 par 380 0 13 11 E 15 Typ drain current slope 16 Typ drain source voltage slope di dt inductive load 125 C dv dt f Ro inductive load 125 C par Vps 380V Ves 0 13V Ip 11A par Vps 380V Ves 0 13V ID 11A dv dt Rev 2 9 Page 8 2007 08 30 e Infineon technologies 17 Typ switching losses E f Ip inductive load 1125 Vps7380V 0 13 89 0 04 Eon includes 5 06560 diode commutation losses 19 Avalanche SOA lAR f far par Tj lt 150 C 2 5 125 1 0 103 107 109 T 2 9 SPP11N65C3 SPA11N65C3 SPI11N65C3 18 Typ switching losses E inductive load T 125 C par 380 Veg 0 4 13V p 11A 0 24 Eon includes 5 06560 diode commutation losses dq ur 20 Avalanche energy Eas par Ip 2 5 A Vpp 50V EAS Page 9 2007 08 30 07 Infineon technologies 21 Drain source breakdown voltage Vernps
8. s f 7j V BR DSS 23 Typ capacitances C f Vbo parameter Ves 0V 1 MHz 10 4 pF 0 100 200 300 400 V 600 Vos Rev 2 9 Page 10 SPP11N65C3 SPA11N65C3 SPI11N65C3 22 Avalanche power losses Par parameter E p 0 6mJ pi il ill 24 Coss stored energy pg EI el LL ML EENEBNEBEAN E oss 67 Tr LLL E cura 0 0 100 200 300 400 V 600 Vos 2007 08 30 e Infineon technologies SPP11N65C3 SPA11N65C3 SPI11N65C3 Definition of diodes switching characteristics Rev 2 9 Page 11 2007 08 30 InFineon technologies SPP11N65C3 SPA11N65C3 SPI11N65C3 PG TO220 3 1 PG TO220 3 21 i F A nee 5 E at y Bs 7 0 L 4 J i aX ii D 3 1 LI y B Ha D tin r e Ht 40 2 24 mil M iia MILLIMETERS INCHES MIN DOCUMENT 4 30 4 57 0 169 0 180 2880
9. scribe certain components and shall not be considered as warranted characteristics Terms of delivery and rights to technical change reserved We hereby disclaim any and all warranties including but not limited to warranties of non infringement regarding circuits descriptions and charts stated herein Infineon Technologies is an approved CECC manufacturer Information For further information on technology delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide see address list Warnings Due to technical requirements components may contain dangerous substances For information on the types in question please contact your nearest Infineon Technologies Office Infineon Technologies Components may only be used life support devices or systems with the express written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life support device or system or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted the human body or to support and or maintain and sustain and or protect human life If they fail it is reasonable to assume that the health of the user or other persons may be endangered Rev 2 9 Page 15 2007 08 30
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INFINEON SPP11N65C3 handbook