INFINEON - IPW50R250CP CoolMOSTM Power Transistor Features Manual
Contents
1. lt 3 n J STD20 JESD22 Pulse width t limited by max 3 Repetitive avalanche causes additional power losses that can be calculated as P ay E 9 apSl p di dt 200A us V pci 7 400V V peak V Ross j T identical low and high side switch 5 is a fixed capacitance that gives the same stored energy as while V ps is rising from 0 to 80 V pss 9 C is a fixed capacitance that gives the same charging time as while V ps is rising from 0 to 80 V pss Rev 2 0 page 3 2007 11 07 Cinfineon IPW50R250CP 1 Power dissipation 2 Safe operating area lo f V bs T 25 D 0 parameter t 125 10 limited by on state 100 resistance 10 75 3 lt 5 a 50 10 25 0 10 0 25 50 75 100 125 150 175 10 10 10 10 Tc Vos IV 3 Max transient thermal impedance 4 Typ output characteristics to Ip f Vpg 25 C parameter D t JT parameter V as 10 35 30 25 10 20 lt 2 E N 15 40 10 5 10 0 0 5 10 15 20 Vos V Rev 2 0 page 4 2007 11 07 Cinfineon IPW50R250CP 5 Typ output characteristics 6 Typ drain source on state resistance 15 pg 150 C R 150 parameter V parameter V as 25 1 5 20 1 2 15 lt 509 a 10 0 6 5 0 0 3 0 5 10 15 20 0 10 20 30 40 Vos IV Ip A 7 Drain source on state resistance 8 Typ transfer characteristi2. Cinfineon IPW50R250CP CoolMOS Power Transistor Product Summary Features Vos T 550 e Lowest figure of merit Roy x Qg TTC 0250 Ultra low gate charge Qus 27 Extreme dv dt rated High peak current capability Pb free lead plating RoHS compliant PG TO247 Quailfied according to for target applications CoolMOS CP is designed for Hard amp soft switching SMPS topologies CCM PFC for ATX Notebook adapter PDP and LCD TV drain PWM Stages for ATX Notebook adapter PDP and LCD TV pin 2 gate Type Package Marking pin 1 IPW50R250CP PG TO247 5R250P ha Maximum ratings at 7 25 C unless otherwise specified Continuous drain current Ip 25 p Pulsed drain current 25 Avalanche energy single pulse E pe 5 2 A Vpp 50 V Avalanche energy repetitive taR 5 2 A Vpp 50 V 52 Avalanche current repetitive t m d 082 MOSFET dv dt ruggedness Vins Gate source voltage Ves Kew om Power dissipation 25 Operating and storage temperature T ag Rev 2 0 page 1 2007 11 07 Cinfineon IPW50R250CP Maximum ratings at 7 25 C unless otherwise specified Parameter Continuous diode forward current Diode pulse current Reverse diode dv dt Parameter Thermal characteristics Thermal resistance junction case Thermal resistance junction ambient Soldering temperature 1 6 m
3. N EHe ISSUE DATE 30 03 2007 REVISION E Rev 2 0 page 9 2007 11 07 Infineon IPW50R250CP Published by Infineon Technologies AG 81726 Munich Germany 2007 Infineon Technologies AG All Rights Reserved Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics With respect to any examples or hints given herein any typical values stated herein and or any information regarding the application of the device Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without limitation warranties of non infringement of intellectual property rights of any third party Information For further information on technology delivery terms and conditions and prices please contact the nearest Infineon Technologies Office www infineon com Warnings Due to technical requirements components may contain dangerous substances For information on the types in question please contact the nearest Infineon Technologies Office Infineon Technologies components may be used in life support devices or systems only with the express written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life support device or system or to affect the safety or effectiveness of that device or system Life support device
4. cs ps ony f T j 7 8 10 V 15 cs psl 2 p R psionymax parameter T 0 7 50 45 25 0 6 40 35 0 5 30 amp 150 C 5 0 4 lt 25 o a a m 20 0 3 15 98 typ 10 0 2 5 0 1 0 60 20 20 60 100 140 180 0 2 4 6 8 10 T Ves V Rev 2 0 page 5 2007 11 07 Cinfineon IPW50R250CP 9 Typ gate charge 10 Forward characteristics of reverse diode V gate 7 8 A pulsed f V sp parameter V pp parameter T 10 10 25 98 8 150 98 10 6 gt lt 9 gt 4 10 2 0 10 0 5 10 15 20 25 30 0 0 5 1 1 5 2 gate nC Vsp 11 Avalanche energy 12 Drain source breakdown voltage E Tj 1575 2 A V pp 50 V Tj 1570 25 mA 350 580 300 560 250 540 200 gt 520 2 a 8 lt 150 25 500 100 480 50 460 0 440 25 75 125 175 60 20 20 60 100 140 180 Tj Rev 2 0 page 6 2007 11 07 Cinfineon C pF IPW50R250CP 13 Typ capacitances 14 Typ Coss stored energy f V bs Veg 0 V 1 MHz E oss pg 10 7 6 Ciss 10 5 Coss 5 10 E 3 2 10 1 10 0 0 100 200 300 400 500 0 100 200 300 400 500 Vos IV Vos V page 7 2007 11 07 Rev 2 0 Cinfineon IPW50R250CP Definition of diode switching characteristics Rev 2 0 page 8 2007 11 07 IPW50R250CP PG TO247 Outlines DOCUMENT NO 28800003327 EUROPEAN PROJECTIO
5. m 0 063 in wavesoldering only allowed at leads from case for 10 s Electrical characteristics at 7 725 C unless otherwise specified Static characteristics Drain source breakdown voltage V 0 V 5 250 pA 500 E Gate threshold voltage V ps7 V as 0 52 mA V ps 500 V V 0 V 5 25 6 V ps 500 V V 0 V Tj 150 C Zero gate voltage drain current lt 20 V V bs 0 V Drain source on state resistance R Ves 10 Vel ES A DS o 17 225 C 10 V p77 8 A 150 Gate resistance Ro f 1 MHz open drain Gate source leakage current Rev 2 0 page 2 2007 11 07 Cinfineon IPW50R250CP Parameter Symbol Conditions Dynamic characteristics Input capacitance iss V 0 V Vps 100 V Output capacitance m f 1MHz uli Effective output capacitance energy C related olen V 0 V V ps 0 V to 400 V Effective output capacitance time 6 C o tr related Turn on delay time aon Rise time V pp 400 V 10 V 7 8 Turn off delay time t Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge V pp 400 V 1577 8 A Gate charge total V 5 0 to 10 V Gate plateau voltage V plateau Reverse Diode Ves 0 V 7 A Diode forward voltage 25 Reverse recovery time V 47400 V lel s di dt 100 A us Reverse recovery charge Peak reverse recovery current
6. s or systems are intended to be implanted in the human body or to support and or maintain and sustain and or protect human life If they fail it is reasonable to assume that the health of the user or other persons may be endangered Rev 2 0 page 10 2007 11 07
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INFINEON IPW50R250CP CoolMOSTM Power Transistor Features Manual