infineon SPP20N60C2 SPB20N60C2 Final data SPA20N60C2 Manual(1)(1)
Contents
1. MARE RAGA BRERA ARSA ABRES oe Infineon technologies Final data Cool MOS Power Transistor Feature e New revolutionary high voltage technology e Worldwide best Anson in TO 220 e Ultra low gate charge e Periodic avalanche rated e Extreme dv dt rated P TO220 3 31 SPP20N60C2 SPB20N60C2 SPA20N60C2 Product Summary P TO263 3 2 P TO220 3 1 e Ultra low effective capacitances P T0220 3 31 Type Package Ordering Code Marking SPP20N60C2 P TO220 3 1 Q67040 54320 20N60C2 Drain SPB20N60C2 P T0263 3 2 Q67040 84322 20N60C2 cor ia SPA20N60C2 P TO220 3 31 Q67040 S4333 20N60C2 pin 1 Source pin 3 Maximum Ratings Parameter Symbol Value Unit SPP B SPA Continuous drain current Ip A Tc 25 C 20 201 Tc 100 C 13 131 Pulsed drain current b limited by Timax ID puls A Avalanche energy single pulse EAS 690 690 mJ b 10A V5p 50V Avalanche energy repetitive tap limited by Tmax Ear b 20A Vpp 50V Avalanche current repetitive far limited by Timax INR A Reverse diode dv dt dv dt V ns k 20 A Vps lt Vpp di dt 100A us Timax 150 C Gate source voltage Vas V Gate source voltage AC f gt 1Hz Vas Power dissipation Tc 25 C Prot W Operating and storage temperature Ti Tai 55 150 C Page 1 2002 08 12 ev Infineon technologies SPP20N60C2 SPB20N60C2 Fi2. 10 A 10 X 100 dl LN tp 0 001 ms 5 n tp 0 01ms 44 tp 0 1 ms t di tp 1 ms VV E z 10 tp 10 ms DC 10 10 10 10 V 10 2002 08 12 technologies 5 Transient thermal impedance Ac f fp parameter D tp T Final data SPP20N60C2 SPB20N60C2 SPA20N60C2 6 Transient thermal impedance FullPAK Znue f f parameter D tp t 10 10 K W K W 107 10 S 2 E N N i N 10 WD 0 5 107 AD 0 5 ID 0 2 FH D 0 2 JTD 0 1 HD 0 1 HD 0 05 ff D 0 05 FT D 0 02 IT D 0 02 ida D 0 01 102 LJ JD 0 01 single pulse single pulse 10 7 6 5 4 3 2 0 10 6 5 4 3 2 1 1 10 10 10 10 10 10 s 10 10 10 10 10 10 10 s 10 h lp 7 Typ output characteristic b f Vos Tj 25 C parameter t 10 us Vas 8 Typ output characteristic Ip f Vos Tj 150 C parameter t5 10 us Vas 35 A 25 ID 20 2002 08 12
3. technologies 9 Typ drain source on resistance Rps on fb parameter 7 2150 C Vas SPP20N60C2 SPB20N60C2 Final data SPA20N60C2 10 Drain source on state resistance Fips on f Tj parameter Ip 13 A Vas 10 V SPP20N60C2 1 1 1 5 Q Q 1 3 0 9 z 1 2 5 da D 14 D E E oi 1 0 6 0 9 0 5 SCH 0 8 A 0 4 7 0 7 DES 0 3 0 6 98 Y Fr 0 2 t i 0 5 LZ typ 0 4 0 1 0 3 0 0 5 10 15 20 25 30 40 60 20 20 60 100 C 180 11 Typ transfer characteristics b f Vas Vos2 2 x bb X Abs on max parameter t 10 us 12 Typ gate charge Vas f Qaate parameter p 20 A pulsed 6 SPP20N60C2 ID 0 20 40 60 80 nC 120 OGate 2002 08 12 ev Infineon technologies 13 Forward characteristics of body diode IF f Vsp parameter 7 tp 10 us 10 2 SPP20N60C2 10 T 25 C typ T 150 C typ ST 25 C 98 gt T 150 C 98 Sc LLLLLI 0 04 08 12 16 2 24V 3 15 Typ switching time t f Ra inductive load Tj 125 C par Vos 380V Vas 0 1
4. 2 1 SPP20N60C2 SPB20N60C2 Infineon T na Definition of diodes switching characteristics Page 11 2002 08 12 SPP20N60C2 SPB20N60C2 technologies Final data SPA20N60C2 P TO 220 3 1 D 10 0 4 4 44 A m 3 7102 1 27 0 13 A 0 05 LO C 3x 0 75 0 1 2 51302 A 1 1 17 0 22 2x 2 54 A 0 25 A BI C All metal surfaces tin plated except area of cut Metal surface min x 7 25 y 12 3 P TO 263 3 1 D2 PAK 10 0 2 4 7 05 8 MAX 5 08 Leg 0 25 MA B 4 1 0 1 B 1 Typical All metal surfaces tin plated except area of cut Metal surface min x 7 25 y 6 9 Page 12 2002 08 12 ev Infineon technologies P TO 220 3 31 FullPAK 10 5 0 005 6 1 0 002 1 5 20 001 15 99 0 005 14 1 0 005 12 79 0 005 0 003 1 28 0 002 Y Il S4 d IL DO 13 6 0 005 gt Please refer to mounting instructions application note AN TO220 3 31 01 Final data SPP20N60C2 SPB20N60C2 SPA20N60C2 4 7 0 005 pe 2 7 0 005 9 68 0 005 2573000 Page 13 SPP20N60C2 SPB20N60C2 F
5. 380V Vas 0 13V b 20A par Tj lt 150 C 1 20 Eon includes SDP06S60 diode mWS commutation losses 1This chart helps to estimate the switching power losses 0 81 The values can be different A la under other operating conditions 0 7 tc W oe lt 0 5 10 I 04 En I 0 3 E 5 02 i I LIE Il T START 125 C 0 1 LIU Dy 5 10 15 20 25 30 Q 40 993 19 107 10 1 FG 19 Avalanche energy 20 Drain source breakdown voltage Ens f Tj Vipr pss f Tj par b 10 A VDD 50 V SPP20N60C2 750 mJ V 600 Y 680 550 Q 500 E 660 450 400 640 350 620 300 250 600 200 150 980 100 560 50 Lo 40 60 80 100 120 C 160 94050 20 20 60 100 C 180 Tj Page 9 2002 08 12 ev Infineon SPP20N60C2 SPB20N60C2 technologies Final data SPA20N60C2 21 Avalanche power losses 22 Typ capacitances Par f f C f Vos parameter Ear 1mJ parameter Vas 0V 1 MHz 500 10 pF W 104 Gss EE oc lt 300 O 10 2 Coss Crss 100 10 0 4 5 6 10 10 10 Hz 10 0 100 200 300 400 V 600 Vos 23 Typ Coss stored energy Eoss f Vos 14 uJ 12 11 o 10 uj 9 8 7 6 5 4 3 2 1 100 200 300 400 V 600 Page 10 2002 08 1
6. 3V Ip 20A 10 ns Final data SPP20N60C2 SPB20N60C2 SPA20N60C2 14 Typ switching time t f Ip inductive load Tj 125 C par Vos 380V Vas 0 13V Ha 23 60 103 IR E A E E ns 0 5 10 15 20 25 30 35 40 A 50 gt lb 16 Typ switching losses E f Ip inductive load Tj 125 C par Vos 380V Vas 0 13V Ra 3 60 1 6 Eon includes SDP06S60 diode commutation losses This chart helps to estimate the switching power losses The values can be different 1 2 y under other operating conditions mWs 2002 08 12 SPP20N60C2 SPB20N60C2 technologies Final data SPA20N60C2 17 Typ switching losses 18 Avalanche SOA E Fia inductive load 7 125 C lios TR par Vps
7. Vos22 b Ros on max 12 S b 13A Input capacitance Giss Vas 0V Wpg 25V 3000 pF Output capacitance Coss f 1MHz 1170 a Reverse transfer capacitance Css S 28 z Effective output capacitance 4 Coe Vas 0V 83 7 energy related Vos 0V to 480V Effective output capacitance 5 Colin 160 time related Turn on delay time tilon Vpp 380V Vas 0 13V 21 ns Rise time L b 20A 51 s Turn off delay time fioi 65999 1212C 56 84 Fall time tf 6 9 Gate Charge Characteristics Gate to source charge Vbp 350V b 20A 21 nC Gate to drain charge 46 Gate charge total Vop 350V 5 20A 79 103 Vas 0 to 10V Gate plateau voltage Vop 350V 5 20A 8 V Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as Pay Eap f 3Device on 40mm 40mm 1 5mm epoxy PCB FR4 with 6cm one layer 70 um thick copper area for drain connection PCB is vertical without blown air Zen is a fixed capacitance that gives the same stored energy as C S is a fixed capacitance that gives the same charging time as C oss oss Page 3 while Vos is rising from 0 to 80 Vpgs while Vos is rising from 0 to 80 Vpgs 2002 08 12 ev Infineon SPP20N60C2 SPB20N60C2 eekleg Final data SPA20N60C2 Electrical Characteristics Parameter Symbol Conditions Values Unit min typ max Characteristics Inverse diode continuous 20 JA
8. forward current Inverse diode direct current 40 pulsed Inverse diode forward voltage Vas 0V kb 12 V Reverse recovery time Va 350V E ls 1040 ns Reverse recovery charge df dt 100A us uC Peak reverse recovery current A Peak rate of fall of reverse Tj 25 C A us recovery current Symbol Value Unit SPP_B SPP_B SPA Rihi 0 007416 0 0004409 0 000376 Ws K Rin 0 016 0 001462 0 00141 Rng 0 021 0 0024 0 00192 Rh4 0 06 0 003031 0 00332 Fins 0 083 0 214 Cih5 0 02 0 019 Fine 0 038 2 479 Cine 0 146 0 412 Page 4 2002 08 12 ev Infineon technologies 1 Power dissipation Prot f Tc Final data 0 SPP20N60C2 Prot 0 20 40 60 80 100 120 3 Safe operating area Ip f Vos parameter D 0 75 25 C C 160 Tc T ALY FT TA O S e A AH AHH OHHH d ii SPP20N60C2 SPB20N60C2 SPA20N60C2 2 Power dissiaption FullPAK Prot f Tc 35 25 Ptot 20 20 40 60 80 100 120 C 160 i TG 4 Safe operating area FullPAK Ip f Vos parameter D 0 Tc 25 C
9. inal data SPA20N60C2 technologies Published by Infineon Technologies AG Bereichs Kommunikation St Martin Strasse 53 D 81541 Miinchen O Infineon Technologies AG 1999 All Rights Reserved Attention please The information herein is given to describe certain components and shall not be considered as warranted characteristics Terms of delivery and rights to technical change reserved We hereby disclaim any and all warranties including but not limited to warranties of non infringement regarding circuits descriptions and charts stated herein Infineon Technologies is an approved CECC manufacturer Information For further information on technology delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide see address list Warnings Due to technical requirements components may contain dangerous substances For information on the types in question please contact your nearest Infineon Technologies Office Infineon Technologies Components may only be used in life support devices or systems with the express written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life support device or system or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body or to support and or
10. maintain and sustain and or protect human life If they fail it is reasonable to assume that the health of the user or other persons may be endangered Page 14 2002 08 12
11. nal data SPA20N60C2 Thermal Characteristics Parameter Symbol Values Unit min typ max Characteristics Thermal resistance junction case RinJO 0 6 K W Thremal resistance junction case FullPAK Dr FP 3 2 3 6 Thermal resistance junction ambient leaded Rin ya B 62 Thermal resistance junction ambient FullPAK Rinya FP 80 SMD version device on PCB RinJA min footprint 62 6 cm cooling area 3 35 Linear derating factor W K Linear derating factor FullPAK 0 28 Soldering temperature Tsold 260 C 1 6 mm 0 063 in from case for 10s Electrical Characteristics at 7 25 C unless otherwise specified Static Characteristics Drain source breakdown voltage Vas 0V 5 0 25mA Drain source avalanche breakdown voltage Vas 0V b 20A Gate threshold voltage Vas Vos b 1mA Zero gate voltage drain current uA Vos 600 V Vag 0 V Tj 25 C Vos 600 V Vas 0 V Tj 150 C 100 Gate source leakage current 100 nA Vag 20V Vpg 0V Drain source on state resistance Vas 10V I5 13A 7j 25 C Gate input resistance f 1 MHz open drain Page 2 2002 08 12 technologies Electrical Characteristics SPP20N60C2 SPB20N60C2 SPA20N60C2 Final data Parameter Symbol Conditions Values Unit min typ max Characteristics Transconductance Os
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infineon SPP20N60C2 SPB20N60C2 Final data SPA20N60C2 Manual(1)(1)