lnfineon BFP650 Guide
Contents
1. Mes Mi RES technologies BFP650 NPN Silicon Germanium RF Transistor Preliminary data e For high power amplifiers e Ideal for low phase noise oscilators e Maxim available Gain Gma 21 dB at 1 8 GHz Noise figure F 0 9 dB at 1 8 GHz e Gold metallization for high reliability VPS05605 e 70 GHz fr Silicon Germanium technology ESD Electrostatic discharge sensitive device observe handling precaution Type Marking Pin Configuration Package BFP650 Ros 1 B 2 E 3 C 4 E SOT343 Maximum Ratings Parameter Symbol Value Unit Collector emitter voltage VcEo 4 V Collector emitter voltage VCES 13 Collector base voltage VcBo 13 Emitter base voltage VEBO 1 2 Collector current lc 150 mA Base current lp 10 Total power dissipation Prot 500 mW Tg lt 75 C Junction temperature T 150 C Ambient temperature TA 65 150 Storage temperature Tsta 65 150 Thermal Resistance Parameter Symbol Value Unit Junction soldering point Rinus lt 140 K W Ire is measured on the collector lead at the soldering point to the pcb 2For calculation of Rinsa Please refer to Application Note Thermal Resistance 1 Mar 27 2003 technologies BFP650 Electrical Characteristics at 74 25 C unless otherwise specified Parameter Symbol Values Unit p min typ max DC Characteristics Collector emitter breakdown vol2. Infineon technologies BFP650 SPICE Parameter Gummel Poon Model Berkley SPICE 2G 6 Syntax Transitor Chip Data IS 0 61 fA BF 450 NF 1 025 VAF 1000 V IKF 0 47 A ISE 62 fA NE 2 BR 42 NR 1 VAR 2 V IKR 18 mA ISC 700 fA NC 1 8 RB 1 036 Q IRB 4 548 mA RBM 0 895 Q RE 0 2 RC 1 006 Q CJE 682 5 fF VIE 0 8 V MJE 0 3 a TF 1 9 ps XTF 10 VTF 1 5 V ITF 1 25 A PTF 0 deg CJC 204 6 fF VJC 0 6 V MJC 0 5 S XCJC 1 S TR 0 2 ns CJS 294 9 fF VJS 0 6 V MJS 027 n NK 1 42 E EG 1 078 eV XTI 3 FC 0 8 TNOM 298 K AF 2 KF 2 441E 11 TITF1 0 0065 TTF2 1 0E 5 All parameters are ready to use no scalling is necessary Extracted on behalf of Infineon Technologies AG by Institut f r Mobil und Satellitentechnik IMST Package Equivalent Circuit LBC 50 pH E Lcc 50 pH LEC 4 pH CBCC Loc LBB 554 6 pH i J e LCB 606 9 pH KS Oe 94 0 0 x LEB 138 7 pH s 75 J Po e Ir CBEC 3276 rr CBCC 1714 fF eos i CES 490 fF 6 CBS 120 fF CBEI d Con ccs 1725 fF P utr CBCO 7 5 fF T 25 C B N 8 CCEO 112 6 fF MM DL CE CBEO 121 5 fF For examples and ready to use parameters CCEI 5 7 fF please contact your local Infineon Technologies CBEI 69 Q S ws MO a http www infineon com silicondiscretes RCS 710 Q RES 140 Q Valid up to 6GHz 4 Mar 27 2003 Infineon technologies Total powe
3. 30 dB 0 9GHz 26 24 6GHz 0 20 40 60 80 100 120 140 160 mA 200 Power gain Gma Gms f VcE lc 80mA f parameter in GHz 30 0 9GHz dB 1 8GHz 20 jnre 2 4GHz 3GHz 15 4GHz 5GHz 10 6GHz 5 1 2 3 4 V 55 Voe Mar 27 2003
4. r dissipation Pot f Ts 0 15 30 45 60 75 90 105 120 C 150 Ts Permissible Pulse Load Piotmax Ptotpc f fp 10 O Q uu d D D 0 gt 0 005 0 01 0 02 10 E 0 05 109 BFP650 Permissible Pulse Load Rinus f t 10 K W 2 10 S c SD 0 5 d 0 2 0 1 101 0 05 0 02 0 01 0 005 _0 10 7 6 5 4 3 2 o 0 107 10 10 10 410 10 C 10 Collector base capacitance Cop f Vcpg f 1MHz 0 8 pF 0 6 CcB 0 5 0 4 A 0 2 0 1 5 Mar 27 2003 Infineon technologies BFP650 Power gain Gma Gms f lc Transition frequency f f c f 1GHz Vcg parameter in V 40 GHz 30 3V we 25 20 15 2V 10 E 1V 0 5V 0 0 20 40 60 80 100 120 140 mA 180 ee b F A Power Gain Gma Gms Laaf f f VcE 3V lc 80mA 55 dB 45 40 30 Gms Gma S21 VcE AN f parameter in GHz
5. tage V lc 1mA lp 0A Collector base cutoff current 100 nA Veg 5V lg 0A Emitter base cutoff current 10 HA Veg 0 5 V lc 20A DC current gain 250 lc 80 mA Vcg 3 V 2 Mar 27 2003 BFP650 technologies Electrical Characteristics at T4 25 C unless otherwise specified Parameter Symbol Values Unit min typ max AC Characteristics verified by random sampling Transition frequency fr 37 GHz lc 80 mA Vcg 3 V f 1 GHz Collector base capacitance Cob 0 26 pF Vop 3V f 1 MHz Collector emitter capacitance Coe 0 45 Vcg 3 V f 1 MHz Emitter base capacitance Ceb Ves 0 5 V f 1 MHz Noise figure F dB lc 10 mA Vcg 3 V f 1 8 GHz Zs Zsopt lc 10 mA VcE 3 V f 6 GHz Zs Zsopt Power gain maximum available Gma Ic 80 mA Vcg 3 V Zs ZSopt ZL iopet 1 8 GHz Ic 80 mA Vcg 3 V Zs Zeck ZL Zem f 6 GHz Transducer gain Luet dB Ic 80 mA Vcg 3 V Zg Z1 50 Q f 1 8 GHz 17 Ic 80 mA Vcg 3 V Zg ZL 50 Q f 6 GHz 6 Third order intercept point at output2 IP3 29 5 dBm Vor 3V Ic 80 mA f 1 8 GHz Zs Z 500 1dB Compression point at output Diop 18 lc 7 80 mA VcE 3 V Zs ZL7 50 Q f 1 8 GHz 1Gina 821 Stal k k 1 1 2 21P3 value depends on termination of all intermodulation frequency components Termination used for this measurement is 50Q from 0 1 MHz to 6 GHz 3 Mar 27 2003 o
Download Pdf Manuals
Related Search
lnfineon BFP650 Guide